TN5015H-6I
Datasheet
High temperature 50 A SCRs
Features
A
G
K
K
A
•
High junction temperature: Tj = 150 °C
•
•
High noise immunity dV/dt = 500V/µs up to 150 °C
Gate triggering current IGT = 15 mA
•
Peak off-state voltage VDRM/VRRM = 600 V
•
High turn-on current rise dI/dt = 100 A/µs
•
•
ECOPACK®2 compliant
Insulated package TO-220AB:
–
Insulated voltage: 2500 VRMS
G
–
Complies with UL 1557 (File ref : E81734)
TO-220AB insulated
Applications
•
•
•
•
•
Motorbike voltage regulator circuits
Inrush current limiting circuits
Motor control circuits and starters
Solid state relays
Overvoltage crowbar protection
Description
The TN5015H-6I offers high thermal performance operation up to 50 A thanks to its
junction temperature Tj up to 150 °C. Its fully tab insulated (thanks to ceramic inside)
TO-220AB package allows a back to back configuration.
Product status
TN5015H-6I
Product summary
Order code
TN5015H-6I
Package
TO-220AB Ins.
VDRM/VRRM
600 V
IGT
15 mA
Its trade-off noise immunity (dV/dt = 500 V/μs) versus its gate triggering current (IGT =
15 mA) and its turn-on current rise (dI/dt = 100 A/μs) allow to design robust and
compact control circuit for voltage regulator in motorbikes and industrial drives,
overvoltage crowbar protection, motor control circuits in power tools and kitchen
appliances, inrush current limiting circuits.
DS12178 - Rev 3 - October 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
TN5015H-6I
Characteristics
1
Characteristics
Table 1. Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified
Symbol
Parameter
IT(RMS)
RMS on-state current (180 ° conduction angle)
IT(AV)
Average on-state current (180 ° conduction angle)
ITSM
Non repetitive surge peak on-state current ( Tj initial = 25 °C)
IPP (1)
RG-A = 3 kΩ, 8/20 us current shape, 10 pulses
I2t
I2t value for fusing
IG = 2 x IGT, tr ≤ 100 ns
dl/dt
Critical rate of rise of on-state current
Value
Unit
Tc = 75 °C
50
A
Tc = 81 °C
30
Tc = 97 °C
25
Tc = 111 °C
20
tp = 8.3 ms
493
tp = 10 ms
450
A
A
1500
A
tp = 10 ms
1012
A2s
f = 60 Hz
100
A/µs
VDRM/VRRM
Repetitive peak off-state voltage
Tj = 150 °C
600
V
VDSM/VRSM
Non repetitive surge peak off-state voltage
tp = 10 ms
VDRM/VRRM + 100
V
Tj = 150 °C
4
A
Tj = 150 °C
1
W
IGM
Peak gate current
tp = 20 µs
PG(AV)
Average gate power dissipation
VRGM
Maximum peak reverse gate voltage
5
V
Tstg
Storage junction temperature range
-40 to +150
°C
Tj
Maximum operating junction temperature
-40 to +150
°C
Tl
Maximum lead temperature soldering during 10 s
260
°C
Insulation RMS voltage, 1 minute
2500
V
Vins
1. According to IEC61000-4-5 standard (See Section 2)
Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified)
Symbol
IGT
VGT
Value Unit
VD = 12 V, RL = 33 Ω
15
mA
Max.
1.3
V
Min.
0.15
V
VD = VDRM, RL = 3.3 kΩ
IH
IT = 500 mA, gate open
Max.
60
mA
IL
IG = 1.2 x IGT
Max.
80
mA
Min.
500
V/µs
Typ.
1.9
µs
Typ.
85
µs
VD = 402 V, gate open
tgt
ITM = 100 A, VD = 402 V, IG = 30 mA, (dIG/dt) max = 0.2 A/µs
tq
ITM = 100 A, VD = 402 V, (dlT/dt)max = 30 A/µs, VR = 25 V, dVD/dt = 50 V/µs
Tj = 150 °C
Max.
VGD
dV/dt
DS12178 - Rev 3
Test conditions
Tj = 150 °C
Tj = 150 °C
page 2/13
TN5015H-6I
Characteristics
Table 3. Static characteristics
Symbol
Test conditions
Value
Unit
VTM
ITM = 100 A, tp = 380 µs
Tj = 25 °C
Max.
1.65
VTO
Threshold voltage
Tj = 150 °C
Max.
0.85
RD
Dynamic resistance
Tj = 150 °C
Max.
9
mΩ
IDRM, IRRM
VD = VDRM = VRRM
10
µA
6
mA
Tj = 25 °C
Max.
Tj = 150 °C
V
Table 4. Thermal parameters
Symbol
DS12178 - Rev 3
Parameter
Value
Rth(j-c)
Junction to case (DC)
Max.
1.5
Rth(j-a)
Junction to ambient (DC)
Typ.
60
Unit
°C/W
page 3/13
TN5015H-6I
Characteristics (curves)
1.1
Characteristics curves
Figure 1. Maximum average power dissipation versus
average on-state current
50
Figure 2. Average and DC on-state current versus case
temperature
P(W)
α = 180 °
α = 120 °
60
D.C
IT(AV)(A)
α = 90 °
40
α = 30 ° α = 60 °
50
α = 60 °
α = 90 ° α = 120 °
α = 180 ° D.C
α = 30 °
40
30
30
20
20
10
10
TC(°C)
IT(AV)(A)
0
0
0
5
10
15
20
25
30
35
40
45
50
Figure 3. Average and D.C. on state current versus
ambient temperature
3.0
IT(AV)(A)
0
25
50
75
100
125
150
Figure 4. Relative variation of thermal impedance versus
pulse duration
1.0E+00
K=[Z th /Rth ]
Zth(j-c)
2.5
Zth(j-a)
D.C
2.0
1.0E-01
α = 180 °
1.5
1.0E-02
1.0
0.5
tp(s)
TA(°C)
0.0
0
DS12178 - Rev 3
25
50
75
100
125
150
1.0E-03
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
page 4/13
TN5015H-6I
Characteristics (curves)
Figure 5. Relative variation of gate trigger current and
gate voltage versus junction temperature (typical values)
IGT,VGT [T j ] / IGT,VGT [T j =25 °C]
2.5
Figure 6. Relative variation of holding and latching
current versus junction temperature (typical values)
IH , IL [T j ]/ IH , IL [T j =25 °C]
2.5
2.3
IGT
2.0
2.0
IH
1.8
1.5
1.5
1.3
VGT
1.0
1.0
IL
0.8
0.5
0.5
0.3
T j (°C)
0.0
-50
-25
0
25
50
75
100
125
150
Figure 7. Relative variation of static dV/dt immunity
versus junction temperature (typical values)
12
T j (°C)
0.0
-50
VD = 402 V
9
Above test equipment capability
50
75
100
125
150
Non repetitive
Tj initial = 25 °C
350
8
25
ITSM(A)
450
400
10
0
Figure 8. Surge peak on-state current versus number of
cycles
dV/dt [ Tj ] / dV/dt [ Tj = 150 °C ]
11
-25
300
7
6
250
5
200
4
Repetitive
Tc = 75 °C
150
3
2
100
1
50
0
90
95
100
105
110
115
120
125
130
135
140
145
150
Tj (°C)
1
Figure 9. Non repetitive surge peak on-state current for a
sinusoidal pulse with width tp < 10 ms
10000
Number of cycles
0
100
1000
Figure 10. On-state characteristics (maximum values)
1000
ITSM(A)
10
ITM (A)
Tj initial = 25 °C
dI/dt limitation: 100 A/µs
ITSM
100
1000
10
100
Tj = 150 °C
VTM (V)
tp(ms)
10
0.01
DS12178 - Rev 3
0.10
1.00
Tj max :
VTO = 0.85 V
Rd = 9 mΩ
Tj = 25 °C
1
10.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
page 5/13
TN5015H-6I
Characteristics (curves)
Figure 11. Relative variation of leakage current versus junction temperature
IDRM , IRRM [Tj; VDRM , VRRM ] / IDRM , IRRM [150 °C; 600 V]
1.0E+00
VDRM = VRRM = 600 V
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25
DS12178 - Rev 3
50
75
Tj (°C)
100
125
150
page 6/13
TN5015H-6I
Application information
2
Application information
2.1
Overvoltage crowbar protection
An application featuring the strong current robustness of TN5015H-6I is the overvoltage crowbar protection,
implemented in AC/DC switch mode power supply. An application global schematic is shown Figure 12. Global
schematic of a crowbar overvoltage protection application.
Figure 12. Global schematic of a crowbar overvoltage protection application
In case of overvoltage on line power terminals (example: lightning event), the voltage is rising quickly across the
DC/DC module and can reach voltages limitations of devices, leading to possible application failure. The
overvoltage crowbar protection answers to this issue by placing the SCR in parallel of the rectifier bridge output,
and limiting the induced surge current during electrical over-stress.
The protection principle is to trig the TN5015H-6I when the overvoltage reaches the maximum authorized voltage.
At TN5015H-6I turn-on, the electrical overvoltage stress becomes an overcurrent stress, flowing through the
TN5015H-6I. No more voltage stress is applied across the down stream converter and the TN5015H-6I absorbs
the overcurrent, making the application safe.
Additionally, the AC/DC SMPS efficiency and stand-by losses are not impacted by the protection thanks to the
very low leakage current of the TN5015H-6I.
DS12178 - Rev 3
page 7/13
TN5015H-6I
Peak pulse current robustness
2.2
Peak pulse current robustness
The TN5015H-6I overcurrent capability is guaranteed through a specific parameter called peak pulse current: IPP.
This is the maximum current robustness of TN5015H-6I for an 8/20 us current waveform, as described in the
IEC61000-4-5 standard.
The Figure 13. IPP 8/20 µs test circuit illustrates the test circuit for the IPP parameter. The overstress is applied 10
times (according to the same standard) with a 1.2/50 µs overvoltage and 8/20 µs overcurrent stress generator.
Figure 13. IPP 8/20 µs test circuit
The Figure 14. IPP 8/20 µs test waveform (left part) is the 8/20 µs waveform of current through the TN5015H-6I
under test. The maximum gate current in this case is 350 mA (zoom at SCR triggering in the right part) and the
maximum non-repetitive rate of current (dI/dt)OC is 250 A/µs.
Figure 14. IPP 8/20 µs test waveform
DS12178 - Rev 3
page 8/13
TN5015H-6I
Package information
3
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
3.1
TO-220AB insulated package information
•
•
Molding compound resin is halogen-free and meets UL standard level V0
Lead-free package leads finishing
•
ECOPACK®2 compliant
Figure 15. TO-220AB insulated package outline
C
B
b2
I
Resin gate 0.5 mm
max. protusion(1)
L
F
A
I4
l3
c2
a1
l2
a2
M
b1
e
Resin gate 0.5 mm
max. protusion(1)
c1
(1)Resin gate position accepted in one of the two positions or in the symmetrical opposites.
DS12178 - Rev 3
page 9/13
TN5015H-6I
TO-220AB insulated package information
Table 5. TO-220AB insulated package mechanical data
Dimensions
Ref.
Min.
A
Inches(1)
Millimeters
Typ.
15.20
a1
Max.
Min.
15.90
0.5984
3.75
Typ.
Max.
0.6260
0.1476
a2
13.00
14.00
0.5118
0.5512
B
10.00
10.40
0.3937
0.4094
b1
0.61
0.88
0.0240
0.0346
b2
1.23
1.32
0.0484
C
4.40
4.60
0.1732
0.1811
c1
0.49
0.70
0.0193
0.0276
c2
2.40
2.72
0.0945
0.1071
e
2.40
2.70
0.0945
0.1063
F
6.20
6.60
0.2441
0.2598
I
3.73
3.88
0.1469
0.1528
L
2.65
2.95
0.1043
0.1161
I2
1.14
1.70
0.0449
0.0669
I3
1.14
1.70
0.0449
I4
15.80
16.80
0.6220
M
16.40
2.6
0.0520
0.0669
0.6457
0.6614
0.1024
1. Inch dimensions are for reference only.
DS12178 - Rev 3
page 10/13
TN5015H-6I
Ordering information
4
Ordering information
Figure 16. Ordering information scheme
TN 50 15
H - 6
I
Series
TN = SCR
RMS current
50 = 50 A
Gate triggering current
15 = 15 m A
High temperature
H = 150 °C
Voltage
6 = 600 V
Package
I = TO-220AB insulated
Table 6. Ordering information
DS12178 - Rev 3
Order code
Marking
Package
Weight
Base qty.
Delivery mode
TN5015H-6I
TN5015H6I
TO-220AB ins.
2.3 g
50
Tube
page 11/13
TN5015H-6I
Revision history
Table 7. Document revision history
Date
DS12178 - Rev 3
Revision Changes
02-Jun-2017
1
Initial release.
01-Dec-2017
2
Inserted Section 6: "Application information"and updated Table 2: "Absolute maximum ratings
(limiting values), Tj = 25 °C unless otherwise specified"
08-Oct-2018
3
Updated Section Cover image.
page 12/13
TN5015H-6I
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DS12178 - Rev 3
page 13/13
