TN6050-12PI

TN6050-12PI Datasheet 60 A, 1200 V standard SCR Features A G K K A • Max. Repetitive Blocking Voltage = VDRM, VRRM = 1200 V • IGT maximum = 50 mA • High static and dynamic commutation: – dI/dt = 100 A/µs – dV/dt = 2000 V/µs • • ECOPACK®2 component (RoHS and HF compliance) Complies with UL 1557 standard (File ref : E81734) Applications G TOP3 Isolated • • • • • • • • • • • • Product status TN6050-12PI Product summary Order code TN6050-12PI Package TOP3 isolated IT(RMS) 60 A VDRM/VRRM 1200 V IGT 50 mA Solar / Wind renewable energy inverters and rectifiers Solid state relay (SSR) Uninterruptible power supply (UPS) Industrial SMPS Bypass AC DC inrush current limiter (ICL) Battery charger AC DC voltage controlled rectifier Industrial welding systems Off board automotive battery charger Soft starter Heating systems Description The TN6050-12PI SCR is suitable in industrial applications where high immunity is required with a lower gate current and ceramic isolated tab, UL1557 certified rated at 2.5 kV RMS and UL94-V0 resin compliance. Available in through-hole high power package TOP3 isolated tab. DS12874 - Rev 1 - December 2018 For further information contact your local STMicroelectronics sales office. www.st.com TN6050-12PI Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter IT(RMS) Value On-state RMS current (180 ° conduction angle) 60 Tc = 82.2 °C IT(AV) Average on-state current (180 ° conduction angle) ITSM Non repetitive surge peak on-state current ( Tj initial = 25 °C) Unit A 38 tp = 8.3 ms 763 tp = 10 ms 700 I2t value for fusing tp = 10 ms 2450 A2s dl/dt Critical rate of rise of on-state current IG = 100 mA, dIg/dt = 1 A/µs Tj = 25 °C 100 A/µs IGM Maximum peak positive gate current 8 A VGM Maximum peak positive gate voltage 5 V 1 W V I2t tp = 20 µs Tj = 125 °C PG(AV) Average gate power dissipation VRGM Maximum peak reverse gate voltage 3.5 Tstg Storage junction temperature range -40 to +150 Operating junction temperature range -40 to +125 Tj Tj = 125 °C A °C Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol IGT Test conditions Value VD = 12 V, RL = 33 Ω VGT Min. 8 Max. 50 Max. 1.3 V Min. 0.2 V mA VGD VD = VDRM, RL = 3.3 kΩ IH IT = 500 mA, gate open Max. 100 mA IL IG = 1.2 x IGT Max. 130 mA Min. 2000 V/µs Typ. 2 µs Typ. 100 µs dV/dt Tj = 125 °C Unit VD = 67% VDRM, gate open Tj = 125 °C tgt IT = 50 A, VD = VDRM, IG = 200 mA, (dIG/dt) max = 0.2 A/µs tq ITM = 50 A, VD = 800 V, dlTM/dt = 30 A/µs, VR = 75 V, dVD/dt = 20 V/µs Tj = 125 °C Table 3. Static characteristics Symbol Value Unit VTM ITM = 120 A, tp = 380 µs Tj = 25 °C Max. 1.75 VTO Threshold voltage Tj = 125 °C Max. 0.93 RD Dynamic resistance Tj = 125 °C Max. 7.1 mΩ 10 µA 6.5 mA IDRM, IRRM DS12874 - Rev 1 Test conditions VDRM = VRRM = 1200 V Tj = 25 °C Tj = 125 °C Max. V page 2/11 TN6050-12PI Characteristics Table 4. Thermal parameters Symbol DS12874 - Rev 1 Parameter Rth(j-c) Junction to case (DC) Rth(j-a) Junction to ambient (DC) Value Typ. 0.70 50 Unit °C/W page 3/11 TN6050-12PI Characteristics (curves) 1.1 Characteristics curves Figure 1. Maximum average power dissipation versus average on-state current Figure 2. Average and DC on-state current versus case temperature P(W) 65 65 α = 180 ° 60 DC α = 90 ° 50 55 50 α = 60 ° 45 DC 60 α = 120 ° 55 IT(AV) (A) 45 40 α = 180 ° 35 35 30 30 α = 120 ° α = 90 ° α = 30 ° 40 25 25 15 5 10 5 10 15 20 25 30 35 40 45 0 0 50 Figure 3. On-state characteristics (maximum values) 1000 Tc(°C) 5 IT(AV) (A) α 0 α = 30 ° 15 360 ° 10 0 α = 60 ° 20 20 25 75 100 125 Figure 4. Average and D.C. on-state current versus ambient temperature ITM(A) I T(AV) (A) 3.0 2.5 100 DC 2.0 α = 180 ° Tj max: Vt0 = 0.93 V Rd = 7.1 mΩ 10 1.5 1.0 Tj = 125 °C 1 50 0.0 0.5 Tj = 25 °C 1.0 1.5 2.0 0.5 VTM(V) 2.5 3.0 3.5 4.0 4.5 Figure 5. Relative variation of thermal impedance junction to case and junction to ambient versus pulse duration 1.0E+00 0.0 0 Zth(j-a) 1.0E-01 tP(s) 1.0E-02 1.0E-03 DS12874 - Rev 1 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 50 75 100 125 Figure 6. Surge peak on-state current versus number of cycles K = [Z / R ] th th Zth(j-c) 25 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 ITSM(A) Non repetitive Tj = 25 °C tp=10ms One cycle Repetitive Tc = 82.2 °C Number of cycles 1 10 100 1000 page 4/11 TN6050-12PI Characteristics (curves) Figure 7. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms 10000 Figure 8. Relative variation of gate trigger current and gate trigger voltage versus junction temperature (typical value) ITSM(A) dl/dt limitation: 100 A/µs 1.8 Tj initial = 25 °C IGT, VGT [ Tj ] / IGT, VGT [ Tj = 25 °C] IGT 1.5 ITSM 1000 1.3 VGT 1.0 0.8 100 0.5 tp(ms) 10 0.01 0.10 1.00 0.3 Tj(°C) 10.00 Figure 9. Relative variation of holding and latching current versus junction temperature (typical value) 1.8 IH, IL [ Tj ] / IH, IL [ Tj = 25 °C] 0.0 -40 -20 0 20 40 60 80 100 120 Figure 10. Relative variation of static dV/dt immunity versus junction temperature 6 dV/dt [T j] / dV/dt [T j=125 °C] VD=VR=800 V IH 1.5 5 1.3 4 IL 1.0 3 0.8 2 0.5 0.3 0.0 1 Tj(°C) -40 -20 0 20 40 Tj(°C) 60 80 100 0 120 25 50 75 100 125 Figure 11. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values) I ,I [ T ;V ,V ]/I /I DRM RRM j DRM RRM DRM RRM 1.0E+00 VDRM=VRRM=1000 V VDRM=VRRM=1200 V 1.0E-01 1.0E-02 VDRM=VRRM=600 V 1.0E-03 Tj(°C) 1.0E-04 DS12874 - Rev 1 25 50 75 100 125 page 5/11 TN6050-12PI Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 TOP3 Isolated package information • • • • DS12874 - Rev 1 ECOPACK® (Lead-free plating and Halogen free package compliance) Lead-free package leads finishing Halogen-free molding compound resin meets UL94 standard level V0 Recommended torque: 1.05 N·m (max. torque: 1.2 N·m) page 6/11 TN6050-12PI TOP3 Isolated package information Figure 12. TOP3 Isolated package outline DS12874 - Rev 1 page 7/11 TN6050-12PI TOP3 Isolated package information Table 5. TOP3 Isolated mechanical data Dimensions Ref. Inches(1) mm Min. Typ. Max. Min. Typ. Max. A 4.40 4.60 0.1732 0.1811 B 1.45 1.55 0.0571 0.0610 C 14.35 15.60 0.5650 0.6142 D 0.50 0.70 0.0197 0.0276 E 2.70 2.90 0.1063 0.1142 F 15.80 16.50 0.6220 0.6496 G 20.40 21.10 0.8031 0.8307 H 15.10 15.50 0.5945 0.6102 J 5.40 5.65 0.2126 0.2224 K 3.40 3.65 0.1339 0.1437 L 4.08 4.17 0.1606 0.1642 M 1.20 1.40 0.0472 0.0551 R 4.60 0.1811 1. Inches given for reference only DS12874 - Rev 1 page 8/11 TN6050-12PI Ordering information 3 Ordering information Figure 13. Ordering information scheme TN 60 50 - 12 PI Series TN = SCR RMS current 60 = 60 A Gate current 50 = 50 mA Voltage 12 = 1200 V Package PI = TOP3 Isolated Table 6. Ordering information DS12874 - Rev 1 Order code Marking Package Weight Base qty. Delivery mode TN6050-12PI TN605012PI TOP3 Isolated 4.48 g 30 Tube page 9/11 TN6050-12PI Revision history Table 7. Document revision history DS12874 - Rev 1 Date Revision 14-Dec-2018 1 Changes Initial release. page 10/11 TN6050-12PI IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS12874 - Rev 1 page 11/11