TPDV1025RG

TPDVxx25 25 A high voltage Triacs Features ■ On-state current (IT(RMS)): 25 A ■ Max. blocking voltage (VDRM/VRRM): 1200 V ■ Gate current (IGT): 150 mA ■ Commutation @ 10 V/µs: up to 88 A/ms ■ Noise immunity: 2 kV/µs ■ Insulated package: – 2,500 V rms (UL recognized: E81734). A2 G A1 Description The TPDVxx25 series use high performance alternistor technology. A1 A2 G Featuring very high commutation levels and high surge current capability, these devices are well adapted to power control for inductive and resistive loads (motor, transformer...) especially on three-phase power grid. Targeted three-phase applications include heating systems, motor starters, and induction motor speed control (especially for fans). Table 1. TOP3 insulated Device summary Parameter Blocking voltage VDRM/VRRM TPDV825RG TPDV1025RG TPDV1225RG 800 V 1000 V 1200 V On-state current IT(RMS) 25 A 150 mA Gate current IGT January 2012 Doc ID 18268 Rev 2 1/7 www.st.com 7 Characteristics TPDVxx25 1 Characteristics Table 2. Absolute maximum ratings (limiting values) Symbol Parameter On-state rms current (180° conduction angle) IT(RMS) Tc = 85 °C ITSM tp = 8.3 ms Tj = 25 °C 2 t dI/dt VDRM VRRM A2S F = 50 Hz 100 A/µs TPDV825 800 tp = 10 ms Critical rate of rise of on-state current IG = 500 mA, dIG/dt = 1 A/µs TPDV1025 Tj = 25 °C Tj = 125 °C 1000 V 1200 Storage junction temperature range Operating junction temperature range VINS(RMS)(1) A 230 TPDV1225 Tstg Tj A 265 I t value for fusing Repetitive peak off-state voltage 25 250 tp = 10 ms I2 Unit 390 tp = 2.5 ms Non repetitive surge peak on-state current Value Insulation rms voltage - 40 to + 150 - 40 to + 125 °C 2500 V 1. A1, A2, gate terminals to case for 1 minute Table 3. Electrical Characteristics (Tj = 25 °C, unless otherwise specified) Symbol IGT VGT VGD Quadrant VD = 12 V DC, RL = 33 Ω VD = VDRM (1) RL = 3.3 kΩ IT = 500 mA Value Unit MAX. 150 mA MAX. 1.5 V I - II - III MIN. 0.2 V I - II - III TYP. 2.5 µs TYP. 50 mA I - II - III Tj = 125 °C VD = VDRM IG = 500 mA dIG/dt = 3 A/µs tgt IH Test conditions Gate open I - III IL IG = 1.2 x IGT dV/dt VTM Vto (1) (1) II Linear slope up to: VD = 67% VDRM Gate open ITM = 35 A Tj = 125 °C tp = 380 µs mA 200 MIN. 2000 V/µs MAX. 1.8 V Threshold voltage Tj = 125 °C MAX. 1.1 V Rd(1) Dynamic resistance Tj = 125 °C MAX. 19 mΩ IDRM IRRM 20 µA VDRM = VRRM 8 mA (dI/dt)c (1) Tj = 25 °C MAX. Tj = 125 °C 20 (dV/dt)c = 200 V/µs (dV/dt)c = 10 V/µs Tj = 125 °C 1. For either polarity of electrode A2 voltage with reference to electrode A1. 2/7 100 TYP. Doc ID 18268 Rev 2 MIN. A/ms 88 TPDVxx25 Table 4. Characteristics Gate characteristics (maximum values) Symbol Parameter PG(AV) Value Unit 1 W Average gate power dissipation PGM Peak gate power dissipation tp = 20 µs 40 W IGM Peak gate current tp = 20 µs 8 A VGM Peak positive gate voltage tp = 20 µs 16 V Value Unit Junction to ambient 50 °C/W Rth(j-c) DC Junction to case for DC 1.5 °C/W Rth(j-c) AC Junction to case for 360 °Conduction angle (F = 50 Hz) 1.1 °C/W Table 5. Thermal resistance Symbol Parameter Rth(j-a) Figure 1. Max. rms power dissipation versus Figure 2. on-state rms current (F = 50Hz). (curves limited by (dI/dt)c) P(W) Max. rms power dissipation and max. allowable temperatures (Tamb and Tcase) for various Rth P(W) 40 Tcase(°C) 40 Rth case to ambient - Rth = 1.5°C/W 30 α = 180° 85 Rth = 1°C/W Rth = 0.5°C/W Rth = 0°C/W 30 95 20 105 10 115 α = 120° 20 α = 90° α = 60° 10 180° α = 30° α α Tamb(°C) IT(RMS)(A) 0 Figure 3. 5 10 15 125 0 0 20 25 On-state rms current versus case temperature 0 20 Figure 4. IT(RMS)(A) 40 60 80 100 120 140 Relative variation of thermal impedance versus pulse duration K=[Zth(j-c)/Rth(j-c)] 30 1.00 α = 180° Zth(j-c) 25 20 0.10 15 Zth(j-a) 10 0.01 5 Tcase(°C) tp(s) 0 0 25 50 75 100 125 0.0 1E-3 Doc ID 18268 Rev 2 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 3/7 Characteristics Figure 5. TPDVxx25 Relative variation of gate trigger Figure 6. current and holding current versus junction temperature IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] Non repetitive surge peak on-state current versus number of cycles ITSM(A) 2.5 200 2 t = 20 ms 150 One cycle IGT 1.5 Tj initial=25°C 100 1 IH & IL 50 0.5 Number of cycles Tj(°C) 0 0 -40 -30 -20 -10 Figure 7. 0 10 20 30 40 50 60 70 80 1 90 100 110 120 130 10 Non-repetitive surge peak on-state Figure 8. current for a sinusoidal pulse and corresponding values of I2t 2 100 1000 On-state characteristics (maximum values) ITM(A) 2 ITSM(A), I t (A s) 1000 1000 Tj initial = 25°C ITSM 100 Tj=max I2t Tj=25°C 10 tp(ms) 100 1 1 Figure 9. 2 5 10 1 2 3 Safe turn-off operating area (dV/dt)c(V/µs) 1000 Tj initial = 25°C 100 10 (dI/dt)c(A/ms) 1 4/7 Tj max.: Vt0=1.1V Rd=19mΩ VTM(V) 1 10 Doc ID 18268 Rev 2 100 4 5 6 TPDVxx25 2 Package information Package information ● Epoxy meets UL94,V0 ● Cooling method: C (by conduction) ● Recommended torque value: 0.9 to 1.2 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. TOP3 insulated dimensions Dimensions Ref. H R Millimeters Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.5 0.7 0.020 0.028 E 2.7 2.9 0.106 0.114 F 15.8 16.5 0.622 0.650 G 20.4 21.1 0.815 0.831 H 15.1 15.5 0.594 0.610 J 5.4 5.65 0.213 0.222 K 3.4 3.65 0.134 0.144 ØL 4.08 4.17 0.161 0.164 P 1.20 1.40 0.047 0.055 A B ØL K F P G C J J D E R Doc ID 18268 Rev 2 4.60 typ. 0.181 typ. 5/7 Ordering information 3 Ordering information Table 7. 4 Ordering information Order code Marking TPDV825RG TPDV825 TPDV1025RG TPDV1025 TPDV1225RG TPDV1225 Package Weight TOP3 insulated 4.5 g Base qty Delivery mode 30 Revision history Table 8. 6/7 TPDVxx25 Document revision history Date Revision Changes 30-Mar-2011 1 First issue. 13-Jan-2012 2 Updated dI/dt in Table 2 and added Vto and Rd to Table 3. 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