TPI8011NRL

TPI Tripolar protection for ISDN interfaces Features ■ ■ ■ Bidirectional triple crowbar protection Peak pulse current: IPP = 30 A , 10/1000 µs Breakdown voltage: – TPI80N: 80 V – TPI120N: 120 V Available in SO-8 package Low dynamic breakover voltage: – TPI8011N: 120 V – TPI12011N: 170 V SO-8 Complies with following standards ■ ■ ■ CCITT K17-K20 – 10/700 µs, 1.5 kV – 5/310 µs, 38 A VDE 0433 – 10/700 µs, 2 kV – 5/310 µs, 50 A VDE 0878 – 1.2/50 µs, 1.5 kV – 1/20 µs, 40 A IEC 61000-4-2 level 4 – 0.5/700 µs, 1.5 kV – 0.2/310 µs, 38 A ■ Benefits ■ Low capacitance from lines to ground, allowing high speed transmission without signal attenuation Good capacitance balance between lines to ensure longitudinal balance Fixed breakdown voltage in both common and differential modes The same surge current capability in both common and differential modes A particular attention has been given to the internal wire bonding. The “4-point” configuration ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (LdI/dt), especially for very fast transient overvoltages ■ ■ ■ ■ ■ ■ Description Dedicated devices for ISDN interface and high speed data telecom line protection. Equivalent to a triple Trisil™ with low capacitance. Figure 1. Tip GND GND Ring Functional diagram 1 2 3 4 8 7 6 5 Tip GND GND Ring TM: Trisil is a trademark of STMicroelectronics November 2007 Rev 5 1/9 www.st.com 9 Characteristics TPI 1 Characteristics Table 1. Symbol IPP ITSM Tstg Tj TL Absolute ratings (Tamb = 25 °C) Parameter Peak pulse current (see note (1)) 10/1000 µs 5/310 µs 2/10 µs tp = 10 ms t = 1s Value 30 40 90 8 3.5 - 55 to 150 150 260 Unit A Non repetitive surge peak on-state current (F = 50 Hz) Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10 s. A °C °C 1. See Figure 3. Table 2. Symbol Rth(j-a) Thermal resistances Parameter Junction to ambient Value 170 Unit °C/W Table 3. Symbol VRM VBR VBO IRM IPP IBO IH VF C Electrical characteristics (Tamb = 25 °C) Parameter Stand-off voltage Breakdown voltage Breakover voltage Leakage current Peak pulse current Breakover current Holding current Forward voltage drop Capacitance IRM @ VRM VBR @ IR min. V 70 105 V 80 120 mA 1 1 VBO max. note (1) V 110 160 VBO dyn. typ. note (2) V 120 170 IBO max. note (1) mA 800 800 IH min. note(3) mA 150 150 Order code max. µA TPI8011N TPI12011N 10 10 1. See the reference test circuit 1 (Figure 5.) 2. Surge test according to CCITT 1.5 kV, 10/700 µs between Tip or Ring and ground 3. See functional holding current test circuit 2 (Figure 6.) Figure 2. 2/9 TPI Table 4. Capacitance characteristics CA (pF) max. 45 15 CB (pF) max. 15 45 Characteristics CONFIGURATION VA = -1 V VB = -56 V VA = -56 V VB = -1 V CA - CB (pF) max. 30 30 LINE A LINE A CA TPIxx CB LINE B LINE B Figure 3. Pulse waveform (10/1000 µs) Figure 4. ITSM(A) 10 9 Surge peak current versus overload duration % I PP 10 0 F=50Hz Tj initial=25°C 8 7 6 50 5 4 3 2 0 tr tp t 1 0 1E-2 1E-1 1E+0 t(s) 1E+1 1E+2 1E+3 3/9 Characteristics Figure 5. Reference test circuit 1 tp = 20 ms Auto Transformer 220 V / 2 A R1 Static relay 140 Ω R2 240 Ω K 220 V TPI VOUT IBO, IH measure D.U.T. VBO measure Transformer 220 V / 800 V 2A TEST PROCEDURE Pulse test duration (tp = 20 ms): ● for Bidirectional devices = Switch K is closed ● for Unidirectional devices = Switch K is open VOUT selection: ● Device with VBO < 200 V ➔ VOUT = 250 VRMS, R1 = 140 Ω ● Device with VBO > 200 V ➔ VOUT = 480 VRMS, R2 = 240 Ω Figure 6. Functional holding current (IH) test circuit 2 R D.U.T. VBAT = - 48 V Surge generator - VP This is a GO-NOGO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE 1/ Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2/ Fire the D.U.T. with a surge current ➔ IPP 10 A, 10/1000 µs. 3/ The D.U.T. will come back off-state within 50 ms maximum. 4/9 TPI Application information 2 Application information Figure 7. Application circuit - U interface protection A R or PTC TPIxx GND B R or PTC Figure 8. Application circuit - S interface protection A R or PTC TPIxx GND R or PTC B A R or PTC TPIxx GND R or PTC B This component uses an intemal structure resulting in symetrical characteristics with a good balanced behaviour. Its topology ensures the same breakdown voltage level for positive and negative surges in differential and common mode. 5/9 Ordering information scheme Figure 9. Connections TPI 1. Tip 1 IN OUT 8 Tip 2 GND 3 7 GND 6 2. Ring 4 IN OUT 5 Ring Connect pins 2, 3, 6 and 7 to ground in order to guarantee a good surge current capability for long duration disturbances. To take advantage of the “4-point” structure of the TPIxxxN, the Tip and Ring lines have to cross the device. In this case, the device will eliminate the overvoltages generated by the parasitic inductances of the wiring (LdI/dt), especially for very fast transients. 3 Ordering information scheme Figure 10. Ordering information scheme TPI 80 1 1 N RL Bidirectional Tripolar Protection Breakdown voltage 80 = 80 V Version Package 1 = SO-8 Revision Packing mode RL = Tape and reel Blank = Tube 6/9 TPI Package information 4 Package information ● Epoxy meets UL94, V0 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 5. SO-8 dimensions Dimensions Ref. Seating Plane C A2 A1 A h x 45° Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 1.75 0.1 0.28 0.17 0.25 0.004 0.049 0.48 0.011 0.23 0.007 0.019 0.009 0.069 0.010 C k L A1 b C D E b ppp C D e A2 1.25 L1 4.80 4.90 5.00 0.189 0.193 0.197 5.80 6.00 6.20 0.228 0.236 0.244 1.27 0.25 0.40 1.04 0° 8° 0.10 0° 0.50 0.010 1.27 0.016 0.041 8° 0.004 0.050 0.020 0.050 8 5 E1 E E1 3.80 3.90 4.00 0.150 0.154 0.157 e h L L1 k ppp 1 4 Figure 11. SO-8 footprint, dimensions in mm (inches) 6.8 (0.268) 0.6 (0.024) 4.2 (0.165) 1.27 (0.050) 7/9 Ordering Information TPI 5 Ordering Information Table 6. Ordering information Marking TP80N (1) Order code TPI8011N TPI8011NRL TPI12011N TPI12011NRL (1) 1. Prefered device Package Weight Base qty 100 2500 Delivery mode Tube Tape and reel Tube Tape and reel TP80N SO-8 TP120N TP120N 0.08 g 100 2500 6 Revision history Table 7. Date August-2001 02-Aug-2004 07-Nov-2007 Document revision history Revision 3A 4 5 Last update. VBO dyn. (page 2) and capacitances (page 3) values update. Reformatted to current standards. Updated Package information. Changes 8/9 TPI Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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