TS110-7UF

TS110-7 High surge voltage 1.25 A SCR for circuit breaker Datasheet - production data Features • On-state rms current, 1.25 A • Repetitive peak off-state voltage, 700 V A • Non-repetitive direct surge peak off-state voltage, 1250 V • Non-repetitive reverse surge peak off-state voltage, 850 V • Triggering gate current, 100 µA G A K K G SMBflat-3L TS110-7UF K G A TO-92 with “GAK” pinout TS110-7A1 Description Thanks to highly sensitive triggering levels, the TS110-7 series is suitable for circuit breaker applications where the available gate current is limited. Such applications include GFCI (ground fault circuit interrupter), AFCI (arc fault circuit interrupter), RCD (residual current device), and RCBO (residual current circuit breaker with overload protection). The 1250 V surge voltage capability of the TS110-7 enables high robustness of the whole circuit breaker. The low leakage current of the TS110-7 reduces power consumption over the entire lifetime of the circuit breaker. The TS110-7 is available in through-hole TO-92 package with GAK pinout and in SMBflat-3L. June 2014 This is information on a product in full production. DocID022271 Rev 4 1/10 www.st.com Characteristics 1 TS110-7 Characteristics Table 1. Absolute ratings (limiting values) Symbol Parameter TO-92 IT(RMS) IT(AV) On-state rms current (180° conduction angle) TO-92 Average on-state current (180° conduction angle) 1.25 A 0.8 A Tl = 58 °C SMBflat-3L Ttab = 110 °C ITSM tp = 8.3 ms 27 tp = 10 ms 25 1st step: one surge every 5 seconds, 25 surges t = 10 ms 2nd step: one surge every 5 seconds, 25 surges p dI/dt Unit SMBflat-3L Ttab = 110 °C Non repetitive surge peak on-state current I ²t Tl = 58 °C Value I²t Value for fusing tp = 10 ms Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns F = 60 Hz Tj initial = 25 °C 3.1 Tj = 125 °C A 25 times 12 A, 25 times 16 A A2S 100 A/µs Critical rate of rise of on-state current Gate open, VD = VBO, tr ≤ 100 ns Tj = 25 °C 100 VDRM, VRRM Repetitive peak off-state voltage, gate open Tj = 125 °C 700 V VDSM Non-repetitive direct surge peak off-state voltage, RGK = 220 Ω tp = 50 µs Tj = 25 °C 1250 V VRSM Non-repetitive reverse surge peak off-state voltage, RGK = 220 Ω tp = 50 µs Tj = 25 °C 850 V Peak gate current tp = 20 µs Tj = 125 °C 1.2 A Tj = 125 °C 0.2 W IGM PG(AV) Tstg Tj Average gate power dissipation Storage junction temperature range - 40 to + 150 Operating junction temperature range - 40 to + 125 °C Table 2. Electrical characteristics Symbol IGT Test conditions Value Unit Min. 1 Max. 100 Max. 0.8 V µA VD = 12 V, R L = 140Ω Tj = 25 °C VGT VGD VD = VDRM, RL = 33 kΩ, RGK = 220 Ω Tj = 125 °C Min. 0.1 V VRG IRG = 2 mA Tj = 25 °C Min. 7.5 V IH IT = 50 mA, RGK = 220 Ω Tj = 25 °C Max. 2 mA IL IG = 5 mA, RGK = 220 Ω Tj = 25 °C Max. 2 mA VD = 67% VDRM, RGK = 220 Ω Tj = 125 °C Min. 15 V/µs dV/dt 2/10 DocID022271 Rev 4 TS110-7 Characteristics Table 3. Static electrical characteristics Symbol Test conditions Value Unit VTM ITM = 2.5 A, tp = 380 µs Tj = 25 °C Max. 1.4 V VT0 Threshold voltage Tj = 125 °C Max. 0.9 V RD Dynamic resistance Tj = 125 °C Max. 200 mΩ 1 µA 100 µA IDRM IRRM Tj = 25 °C VD = VDRM / VRRM, R GK = 220 Ω Max. Tj = 125 °C Table 4. Thermal resistance Symbol Parameter Rth(j-l) Junction to leads (DC) Rth(j-a) Junction to ambient (DC) Rth(j-c) Junction to case (DC) TO-92 65 TO-92 160 SMBflat-3L 75 SMBflat-3L 14 Unit °C/W S = 5 cm2 Figure 1. Maximum average power dissipation versus average on-state current 1.2 Value Figure 2. Average and DC on-state current versus lead temperature (TO-92) P(W) IT(AV)(A) 1.4 α = 30°, 60°, 90°, 120°, 180°, DC α = 30°, 60°, 90°, 120°, 180°, DC 1.0 1.2 1.0 0.8 0.8 0.6 0.6 0.4 0.4 360° 0.2 0.2 Tlead (°C) α IT(AV)(A) 0.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Figure 3. Average and DC on-state current versus lead temperature (SMBflat-3L) 1.4 0 1.0 25 50 75 100 125 Figure 4. Average and DC on-state current versus ambient temperature IT(AV)(A) IT(AV)(A) α = 30°, 60°, 90°, 120°, 180°, DC SMBF-3L 1.2 DC 1.2 1.0 SMBF-3L 1.0 180- 0.8 0.8 TO-92 DC 0.6 0.6 TO-92 0.4 0.4 180- 0.2 0.2 Tamb(°C) Tlead (°C) 0.0 0.0 0 25 50 75 100 125 0 DocID022271 Rev 4 25 50 75 100 125 3/10 10 Characteristics TS110-7 Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration 1.00 K=[Zth(j-a)/Rth(j-a)] 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 TO-92 SMBflat-3L Copper surface area = 5cm² 0.10 tp(s) 0.01 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 Figure 6. Relative variation of gate triggering current and voltage, holding and latching current versus Tj 1.0E+03 IGT, IH, IL, VGT [Tj] / IGT, IH, IL, VGT [Tj=25°C] I GT IH & I L V GT Tj(°C) -40 -20 0 20 40 60 80 100 120 Figure 7. Relative variation of holding current Figure 8. Relative variation of dV/dt immunity versus gate-cathode resistance (typical values) versus gate-cathode resistance (typical values) IH[RGK] / IH[RGK = 220 Ω] 1.5 10.00 dV/dt[RGK] / dV/dt[RGK = 220 W] Tj = 125°C VD = 0.67 x VDRM 1.0 1.00 0.5 0.10 RGK(W) RGK(kΩ) 0.0 0.1 0.01 1.0 10.0 Figure 9. Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values) dV/dt[CGK] / dV/dt[CGK = 100 nF] 5.0 600 800 dV/dt[Tj] / dV/dt[Tj = 125 °C] RGK = 220 Ω VD = 0.67 x VDRM 8 3.5 7 3.0 6 2.5 5 2.0 4 1.5 3 1.0 2 0.5 CGK(nF) Tj(°C) 1 0.0 0 0 4/10 400 9 Tj = 125°C VD = 0.67 x VDRM 4.0 200 Figure 10. Relative variation of dV/dt immunity versus junction temperature with RGK = 220 Ω (typical values) 10 Typical value of dV/dt[CGK = 100 nF] = 25 V/µs 4.5 0 20 40 60 80 100 120 140 160 180 200 220 20 DocID022271 Rev 4 40 60 80 100 120 TS110-7 Characteristics Figure 11. Surge peak on-state current versus number of cycles 26 Figure 12. Non-repetitive surge peak on-state current, and corresponding values of I2t 2 ITSM(A) 1000 2 ITSM(A), I t (A s) Tj initial=25 °C 24 Non repetitive Tj initial=25 °C 22 20 tp=10ms One cycle 18 SMBF-3L Repetitive TA=25 °C 16 14 ITSM 100 12 10 8 10 TO-92 Repetitive TA=25 °C 6 4 I²t 2 Sinusoidal pulse with width tp < 10 ms Number of cycles 0 tp(ms) 1 1 10 100 1000 Figure 13. On-state characteristics (maximum values) 100.0 ITM(A) TJ=125°C 1.0 TJ=25°C T j max : Vto =0.9 V Rd =200 mΩ 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.10 1.00 10.00 Figure 14. Thermal resistance junction to ambient versus copper surface under anode (SMBflat-3L) 170 160 150 140 130 120 110 100 90 80 70 60 50 10.0 VTM(V) 0.01 Rth(j-a)(°C/W) Epoxy printed circuit board FR4 copper thickness = 35 µm S(cm²) 0 DocID022271 Rev 4 1 2 3 4 5 5/10 10 AC line transient voltage ruggedness 2 TS110-7 AC line transient voltage ruggedness In comparison with standard SCRs, the TS110-7 is self-protected against over-voltage. The TS110-7 switch can safely withstand AC line surge voltages by switching to the on state (for less than 10 ms on 50 Hz mains) to dissipate energy shocks through the load. The load limits the current through the TS110-7. The self-protection against over-voltage is based on an overvoltage crowbar technology. This safety feature works even with high turn-on current ramp up. Figure 15 represents the TS110-7 in a test environment. It is used to stress the TS110-7 switch according to the IEC 61000-4-5 standard conditions. The TS110-7 folds back safely to the on state as shown in Figure 16. The TS110-7 recovers its blocking voltage capability after the surge and the next zero current crossing. Such a non repetitive test can be done at least 10 times. Figure 15. Overvoltage ruggedness test circuit for IEC 61000-4-5 standards Surge generator Model of the load Filtering unit R1 R2 60 Ω 60 Ω CIN 150 nF AC Mains TS110 VT IT 12 Ω 47 nF Figure 16. Typical current and voltage waveforms across the TS110-7 during IEC 61000-4-5 standard test Vpeak = VBO 1.2/50 µs voltage surge V 0 Ipeak = 25 A I 0 dI/dt = 100 A/µs 6/10 DocID022271 Rev 4 TS110-7 3 Package information Package information • Epoxy meets UL94, V0 • Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 17. TO_92 dimensions (definitions) A a B C F D E Table 5. TO-92 dimensions (values) Dimensions Ref. Millimeters Min. A Typ. Inches Max. Min. 1.35 B Typ. 0.053 4.70 C Max. 0.185 2.54 0.100 D 4.40 0.173 E 12.70 0.500 F 3.70 0.146 a 0.5 0.019 For packing information see STMicroelectronics document PD0022 Packing information, “Axial, through hole, surface mount and chip scale packages for IPAD™, protection, rectifiers, thyristors and ACSs™”. DocID022271 Rev 4 7/10 10 Package information TS110-7 Figure 18. SMBflat-3L dimensions (definitions) A c e D b 2x L2 2x L 2x L1 E E1 L1 L L2 b4 Table 6. SMBflat-3L dimensions (values) Dimensions Ref. Millimeters Min. Typ. Inches Max. Min. Typ. A 0.90 1.10 0.035 0.043 b 0.35 0.65 0.014 0.026 b4 1.95 2.20 0.07 0.087 c 0.15 0.40 0.006 0.016 D 3.30 3.95 0.130 0.156 E 5.10 5.60 0.201 0.220 E1 4.05 4.60 0.156 0.181 L 0.75 1.50 0.030 0.059 L1 0.40 0.016 L2 0.60 0.024 e 1.60 0.063 Figure 19. SMBflat-3L footprint dimensions 5.84 (0.230) 0.51 (0.020) 2.07 (0.082) 2.07 (0.082) 0.51 (0.020) 1.20 (0.047) 3.44 (0.136) millimeters (inches) 8/10 Max. DocID022271 Rev 4 1.20 (0.047) TS110-7 4 Ordering information Ordering information Figure 20. Ordering information scheme TS 1 10 - 7 A1 (-AP) Sensitive SCR series Current (rms) 1 = 1.25 A Gate sensitivity 10 = 100 µA Voltage 7 = 700 V Package A1 = TO-92 with “GAK” pinout UF = SMBflat-3L Packing mode -AP = Ammopack (TO_92) Blank = Bulk (TO-92), 13” tape and reel (SMBflat-3L) Table 7. Ordering information Order code Marking TS110-7A1 5 Package Weight T0-92 200 mg TS110-7 TS110-7A1-AP TS110-7 TS110-7UF TS110-7 SMBflat-3L 47 mg Base qty. Delivery mode 2500 Bulk 2000 Ammopack 5000 Tape and reel 13” Revision history Table 8. Document revision history Date Revision Changes 01-Sep-2012 1 Initial release. 11-Sep-2012 2 Added SMBflat-3L package. 17-Oct-2013 3 Corrected typographical error in Figure 8. 18-Jun-2014 4 Updated device name. DocID022271 Rev 4 9/10 10 TS110-7 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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