TS110-8A1

TS110-8 High surge voltage 1.25 A SCR for circuit breaker Datasheet - production data Description $ Thanks to highly sensitive triggering levels, the TS110-8 series is suitable for circuit breaker applications where the available gate current is limited. * . The 1250 V direct surge voltage capability of the TS110-8 enables high robustness of the whole circuit breaker. The low leakage current of the TS110-8 reduces power consumption over the entire lifetime of the circuit breaker. The high off-state immunity (200 V/µs) insures the non tripping of the breaker in case of electrical fast transient (EFT) on the mains. $ * . * 60%IODW/ . $ $ * . 72ZLWK ³*$.´ SLQRXW 72ZLWK ³.*$´ SLQRXW * The TS110-8 is available in through-hole TO-92 package with GAK and KGA pinout and in SMBflat-3L package. Table 1. Device summary Features • On-state rms current, 1.25 A • Repetitive peak off-state voltage, 800 V • Non-repetitive direct surge peak off-state voltage, 1250 V Symbol Value Unit IT(RMS) 1.25 A VDRM, V RRM 800 V VDSm, V RSM 1250, 900 V IGT 100 µA Tj 125 °C • Non-repetitive reverse surge peak off-state voltage, 900 V • Triggering gate current, 100 µA • High off-state immunity: 200 V/µs • ECOPACK®2 compliant component Applications • GFCI (Ground Fault Circuit Interrupter) • AFCI (Arc Fault Circuit Interrupter) • RCD (Residual Current Device) • RCBO (Residual Current circuit Breaker with Overload protection) • AFDD (Arc Fault Detection Device) October 2014 This is information on a product in full production. DocID026589 Rev 1 1/10 www.st.com Characteristics 1 TS110-8 Characteristics Table 2. Absolute ratings (limiting values) Symbol IT(RMS) IT(AV) Parameter Average on-state current (180° conduction angle) SMBflat-3L Tc = 109 °C TO-92 TI = 53 °C SMBflat-3L Tc = 109 °C tp = 10 ms ITSM dI/dt Tl = 53 °C tp = 8.3 ms Non repetitive surge peak on-state current I²t TO-92 On-state rms current (180° conduction angle) Value Unit 1.25 A 0.8 A 21 Tj initial = 25 °C 20 1st step: one surge every 5 seconds, 25 surges 2nd step: one surge every 5 seconds, 25 surges tp = 10 ms I²t Value for fusing tp = 10 ms, 25 °C 2 Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns F = 50 Hz, 125 °C 100 Tamb = 90 °C A 25 times 12 A 25 times 16 A A2S A/µs Non repetitive critical current rate of rise at break-over, see Figure 17, VD > VDSm 200 VDRM, VRRM Repetitive peak off-state AC voltage, RGK = 220 Ω Tj = 125 °C 800 V VDSm Non-repetitive direct surge peak off-state voltage, RGK = 220 Ω tp = 10 ms Tj = 25 °C 1250 V VRSM Non-repetitive reverse surge peak off-state voltage, RGK = 220 Ω tp = 10 ms Tj = 25 °C 900 V Peak gate current tp = 20 µs Tj = 125 °C 1.2 A Tj = 125 °C 0.2 W IGM PG(AV) Tstg Tj Average gate power dissipation Storage junction temperature range - 40 to + 150 Operating junction temperature range - 40 to + 125 °C Table 3. Electrical characteristics Symbol IGT Test conditions Value Unit Min. 1 Max. 100 Max. 0.8 V µA VD = 12 V, R L = 140Ω Tj = 25 °C VGT VGD VD = VDRM, RL = 33 kΩ, RGK = 220 Ω Tj = 125 °C Min. 0.1 V VRG IRG = 2 mA Tj = 25 °C Min. 7.5 V IH IT = 50 mA, RGK = 220 Ω Tj = 25 °C Max. 12 mA IL IG = 5 mA, RGK = 220 Ω Tj = 25 °C Max. 12 mA VD = 67% VDRM, RGK = 220 Ω Tj = 125 °C Min. 200 V/µs dV/dt 2/10 DocID026589 Rev 1 TS110-8 Characteristics Table 4. Static electrical characteristics Symbol Test conditions Value Unit VTM ITM = 2.5 A, tp = 380 µs Tj = 25 °C Max. 1.6 V VT0 Threshold voltage Tj = 125 °C Max. 0.95 V RD Dynamic resistance Tj = 125 °C Max. 220 mΩ 1 µA 100 µA IDRM IRRM Tj = 25 °C VD = VDRM / VRRM, R GK = 220 Ω Max. Tj = 125 °C Table 5. Thermal resistance Symbol Parameter Rth(j-l) Junction to leads (DC) Rth(j-a) Junction to ambient (DC) Rth(j-c) Junction to case (DC) S = 5 cm Į ƒ TO-92 160 SMBflat-3L 75 SMBflat-3L 14 ,7 $ $9 72 Į ƒ   Į ƒ  65 Figure 2. Average and DC on-state current versus lead temperature (TO-92)  Į '& TO-92 Unit °C/W 2 Figure 1. Maximum average power dissipation versus average on-state current 3:  Value Į ƒƒƒƒƒ'&  Į ƒ  Į ƒ     ƒ          7/ƒ& ,7$9 $ Į       Figure 3. Average and DC on-state current versus case temperature (SMBflat-3L)      Figure 4. Average and DC on-state current versus ambient temperature ,7 $ $9 IT(AV)(A) 1.4 60%IODW/ '&  a = 30°, 60°, 90°, 120°, 180°, DC SMBflat-3L 1.2  60%IODW/ 1.0  Į ƒ 0.8 72 '&  0.6  0.4 72 Į ƒ  0.2 Tc (°C) 0 25 50 7Dƒ&  0.0 75 100 125  DocID026589 Rev 1      3/10 10 Characteristics TS110-8 Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration Figure 6. Typical thermal resistance junction to ambient versus copper surface under anode (epoxy FR4, Cuth = 35 µm) K = [Zth(j-a)/Rth(j-a)] 1.00  TO-92 5WKMDƒ&: 60%IODW/ SMBflat-3L Copper surface area = 5cm²  0.10  Tp (s) 0.01 1.0E-03 1.0E-02 1.0E-01 1.0E+00  1.0E+01 1.0E+02   ,*7 9*7>7M@9*7 >7M ƒ&@ ,*7>7M@,*7 >7M ƒ&@  7 ƒ& M            , , >7 @, , >7  ƒ&@  + / M + / M      Figure 8. Relative variation of latching and holding current versus junction temperature (typical values)  9*7   1.0E+03 Figure 7. Relative variation of gate trigger current and trigger voltage versus junction temperature (typical values)  6FXFPð   ,+DQG,/         7 ƒ& M            Figure 9. Relative variation of holding current Figure 10. Relative variation of dV/dt immunity versus gate-cathode resistance (typical values) versus junction temperature (typical values) 2.5 IH [RGK] / IH [RGK = 220 Ω] dV/dt [Tj] / dV/dt [Tj = 125°C] 10 VD = 0.67 X VDRM RGK = 220 Ω 9 8 2.0 7 6 1.5 5 4 1.0 3 2 0.5 1 RGK (KΩ) 1.E-01 4/10 Tj (°C) 0 0.0 1.E+00 1.E+01 20 DocID026589 Rev 1 40 60 80 100 120 TS110-8 Characteristics Figure 11. Relative variation of dV/dt immunity Figure 12. Relative variation of dV/dt immunity versus gate-cathode resistance (typical values) versus gate-cathode capacitor (typical values) 10.00 dV/dt [RGK] / dV/dt [RGK = 220 Ω] dV/dt [CGK] / dV/dt [CGK = 100 pF] 5.0 VD = 0.67 X VDRM Tj = 125 °C 4.5 VD = 0.67 X VDRM Tj = 125 °C RGK = 220 Ω 4.0 3.5 3.0 1.00 2.5 2.0 1.5 1.0 0.5 RGK (Ω) 0.10 100 200 300 400 500 600 700 Figure 13. On-state characteristics (maximum values) 100.0 CGK (nF) 0.0 ITM (A) 10.0 Tj = 125 °C 1.0 Tj = 125 °C Vto = 0.95 V Rd = 220 mΩ Tj = 25 °C VTM (V) 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 Figure 14. Surge peak on-state current versus number of cycles ,760$   1RQUHSHWLWLYH7M ƒ&  WS PV   2QHF\FOH   60%IODW/UHSHWLWLYH7  ƒ& D      72UHSHWLWLYH7  ƒ& D  1XPEHURIF\FOHV      Figure 15. Non repetitive surge peak on-state current , $  760 )RUDVLQXVRLGDOSXOVHZLWKZLGWKPV 7 LQLWLDO ƒ& M ,760    WSPV   DocID026589 Rev 1  5/10 10 AC line transient voltage ruggedness 2 TS110-8 AC line transient voltage ruggedness In comparison with standard SCRs, the TS110-8 is self-protected against over-voltage. The TS110-8 switch can safely withstand AC line direct surge voltages by switching to the on state (for less than 10 ms on 50 Hz mains) to dissipate energy shocks through the load. The load limits the current through the TS110-8. The self-protection against over-voltage is based on an overvoltage crowbar technology. This safety feature works even with high turn-on current ramp up. Figure 16 represents the TS110-8 in a test environment. It is used to stress the TS110-8 switch according to the IEC 61000-4-5 standard conditions. The TS110-8 folds back safely to the on state as shown in Figure 17. The TS110-8 recovers its blocking voltage capability after the direct surge and the next zero current crossing. Such a non repetitive test can be done at least 10 times. Figure 16. Overvoltage ruggedness test circuit for IEC 61000-4-5 standards 6XUJHJHQHUDWRU 0RGHORIWKHORDG )LOWHULQJXQLW 5 5 ȍ ȍ / —+ 76 &,1 Q) $&0DLQV 97 ,7 ȍ Q) Figure 17. Typical current and voltage waveforms across the TS110-8 during IEC 61000-4-5 standard test 9SHDN 9 '6P —VYROWDJHVXUJH 9  ,SHDN  $ ,  G,GW $—V 6/10 DocID026589 Rev 1 TS110-8 3 Package information Package information • Epoxy meets UL94, V0 • Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 18. TO-92 dimensions (definitions) A a B C F D E Table 6. TO-92 dimensions (values) Dimensions Ref. Millimeters Min. A Typ. Inches Max. Min. 1.35 B Typ. 0.053 4.70 C Max. 0.185 2.54 0.100 D 4.40 0.173 E 12.70 0.500 F 3.70 0.146 a 0.5 0.019 For ammopack packing information, please contact your sales representative. DocID026589 Rev 1 7/10 10 Package information TS110-8 Figure 19. SMBflat-3L dimensions (definitions) A c e D b 2x L2 2x L 2x L1 E E1 L1 L L2 b4 Table 7. SMBflat-3L dimensions (values) Dimensions Ref. Millimeters Min. Typ. Inches Max. Min. Typ. A 0.90 1.10 0.035 0.043 b 0.35 0.65 0.014 0.026 b4 1.95 2.20 0.07 0.087 c 0.15 0.40 0.006 0.016 D 3.30 3.95 0.130 0.156 E 5.10 5.60 0.201 0.220 E1 4.05 4.60 0.156 0.181 L 0.75 1.50 0.030 0.059 L1 0.40 0.016 L2 0.60 0.024 e 1.60 0.063 Figure 20. SMBflat-3L footprint dimensions 5.84 (0.230) 0.51 (0.020) 2.07 (0.082) 2.07 (0.082) 0.51 (0.020) 1.20 (0.047) 3.44 (0.136) millimeters (inches) 8/10 Max. DocID026589 Rev 1 1.20 (0.047) TS110-8 4 Ordering information Ordering information Figure 21. Ordering information scheme TS 1 10 - 8 A1 (-AP) Sensitive SCR series Current (rms) 1 = 1.25 A Gate sensitivity 10 = 100 μA Voltage 8 = 800 V Package A1 = TO-92 with “GAK” pinout A2 = TO-92 with “KGA” pinout UF = SMBflat-3L Packing mode -AP = Ammopack (TO_92) Blank = Bulk (TO-92), 13” tape and reel (SMBflat-3L) Table 8. Ordering information Order code Marking TS110-8A1 Package Weight T0-92 200 mg TS110-8 TS110-8A1-AP TS110-8 TS110-8A2 TS110-8 T0-92 5 TS110-8A2-AP TS110-8 TS110-8UF TS110-8 SMBflat-3L Base qty. Delivery mode 2500 Bulk 2000 Ammopack 2500 Bulk 2000 Ammopack 5000 Tape and reel 13” 200 mg 47 mg Revision history Table 9. Document revision history Date Revision 13-Oct-2014 1 Changes Initial release. DocID026589 Rev 1 9/10 10 TS110-8 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 10/10 DocID026589 Rev 1