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TS1220-X00B-TR

TS1220-X00B-TR

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    TS1220-X00B-TR - Sensitive and Standard 12 A SCRS - STMicroelectronics

  • 数据手册
  • 价格&库存
TS1220-X00B-TR 数据手册
TN12, TS12 and TYNx12 Series Sensitive and Standard 12 A SCRS Main features Symbol IT(RMS) VDRM/VRRM IGT Value 12 600 to 1000 0.2 to 15 Unit A A G K A A V mA KA G KA G DPAK (TN12-B / TS12-B) D2PAK (TN12-G) A Description Available either in sensitive (TS12) or standard (TN12 / TYN) gate triggering levels, the 12 A SCR series is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits. Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space area. A K A K G A G IPAK (TN12-H / TS12-H) TO-220AB (TYNx12RG) Order codes Part Numbers TN1215-x00B TN1215-x00B-TR TN1215-x00G TN1215-x00G-TR TN1215-x00H TS1220-x00B TS1220-x00B-TR TS1220-x00H TYNx12RG TYNx12TRG Marking TN1215x00 TN1215x00 TN1215x00G TN1215x00G TN1215x00 TS1220x00 TS1220x00 TS1220x00 TYNx12 TYNx12T March 2007 Rev 6 1/12 www.st.com 12 Characteristics TN12, TS12 and TYNx12 Series 1 Table 1. Symbol Characteristics Absolute ratings (limiting values) Value Parameter TN12-G TYN12 Tc = 105° C Tc = 105° C 145 Tj = 25° C Tj = 25° C Tj = 125° C Tj = 125° C Tj = 125° C 140 98 50 4 1 - 40 to + 150 - 40 to + 125 5 12 8 115 A 110 60 A2S A/µs A W °C V TN12-B/H TS12-B/H Unit IT(RMS) IT(AV) ITSM I²t dI/dt IGM PG(AV) Tstg Tj VRGM RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range tp = 8.3 ms tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 µs A A Maximum peak reverse gate voltage (for TN12 and TYN12 only) Table 2. Symbol IGT VGT VGD VRG IH IL dV/dt VTM Vt0 Rd IDRM IRRM Sentitive electrical characteristics (Tj = 25° C, unless otherwise specified) Test Conditions VD = 12 V VD = VDRM IRG = 10 µA IT = 50 mA IG = 1 mA RGK = 1 kΩ RGK = 1 kΩ RGK = 220 Ω Tj = 125° C Tj = 25° C Tj = 125° C Tj = 125° C Tj = 25° C Tj = 125° C RL = 140 Ω RL = 3.3 kΩ RGK = 220 Ω Tj = 125° C MAX. MAX. MIN. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. 2 mA TS1220 200 0.8 0.1 8 5 6 5 1.6 0.85 30 5 Unit µA V V V mA mA V/µs V V mΩ µA VD = 65 % VDRM ITM = 24 A tp = 380 µs Threshold voltage Dynamic resistance VDRM = VRRM RGK = 220 Ω 2/12 TN12, TS12 and TYNx12 Series Table 3. Symbol Characteristics Standard electrical characteristics (Tj = 25° C, unless otherwise specified) TN1215 Test Conditions B/H MIN. 2 15 1.3 0.2 40 80 200 1.6 0.85 30 5 MAX. 2 mA 30 60 15 30 40 30 60 200 G x12T 0.5 5 x12 2 mA MAX. MAX. VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM ITM = 24 A Gate open Tj =125° C Tj = 25° C Tj = 125° C Tj = 125° C Tj = 25° C Tj = 125° C RL = 3.3 kΩ Gate open Tj = 125° C MIN. MAX. MAX. MIN. MAX. MAX. MAX. 15 V V mA mA V/µs V V mΩ µA TYN Unit IGT VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = 12 V RL = 33 Ω tp = 380 µs Threshold voltage Dynamic resistance VDRM = VRRM Table 4. Symbol Rth(j-c) Thermal resistance Parameter Junction to case (DC) S (1) Value 1.3 Unit ° C/W = 0.5 cm² DPAK D2PAK IPAK TO-220AB 70 45 ° C/W 100 60 S(1) = 1 cm² Rth(j-a) Junction to ambient (DC) 1. S = Copper surface under tab Figure 1. Maximum average power Figure 2. dissipation versus average on-state current IT(AV)(A) 14 Average and D.C. on-state current versus case temperature P(W) 12 11 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 360° α = 180° D.C. 12 10 α = 180° 8 6 4 2 IT(AV)(A) α 8 9 Tcase(°C) 0 0 25 50 75 100 125 3/12 Characteristics TN12, TS12 and TYNx12 Series Figure 3. Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) (DPAK) Figure 4. Relative variation of thermal impedance junction to case versus pulse duration IT(AV)(A) 3.0 2.5 D.C. K=[Zth(j-c)/Rth(j-c)] 1.0 2.0 1.5 α = 180° D2PAK 0.5 1.0 0.5 DPAK 0.2 Tamb(°C) 0.0 0 25 50 75 100 125 tp(s) 0.1 1E-3 1E-2 1E-1 1E+0 Figure 5. Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, FR4 PC board for DPAK) 2.0 1.8 1.6 DPAK Relative variation of gate trigger current and holding current versus junction temperature for TS12 series K=[Zth(j-a)/Rth(j-a)] 1.00 IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] IGT 1.4 D2PAK 1.2 TO-220AB / IPAK 0.10 1.0 0.8 0.6 0.4 IH & IL RGK = 1kΩ tp(s) 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.2 0.0 -40 -20 0 20 Tj(°C) 40 60 80 100 120 140 Figure 7. Figure 8. Relative variation of gate trigger current and holding current versus junction temperature for TN12 and TYNx12 series 5.0 4.5 4.0 IGT Relative variation of holding current versus gate-cathode resistance (typical values) for TS12 series IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 0 20 40 60 80 100 120 140 IH & IL IH[RGK] / IH[RGK=1kΩ] Tj = 25°C 3.5 3.0 2.5 2.0 1.5 1.0 Tj(°C) 0.5 0.0 1E-2 1E-1 RGK(kΩ) 1E+0 1E+1 4/12 TN12, TS12 and TYNx12 Series Characteristics Figure 9. Relative variation of dV/dt immunity Figure 10. Relative variation of dV/dt immunity versus gate-cathode resistance versus gate-cathode capacitance (typical values) for TS12 series (typical values) for TS12 series dV/dt[CGK] / dV/dt[RGK=220Ω] 4.0 Tj = 125°C VD = 0.67 x VDRM dV/dt[RGK] / dV/dt[RGK=220Ω] 10.0 3.5 3.0 2.5 VD = 0.67 x VDRM Tj = 125°C RGK = 220Ω 1.0 2.0 1.5 1.0 RGK(kΩ) 0.1 0 200 400 600 800 1000 1200 0.5 0.0 0 25 50 CGK(nF) 75 100 125 150 Figure 11. Surge peak on-state current versus Figure 12. Non-repetitive surge peak on-state number of cycles current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of I²t ITSM(A) 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 1 2000 Tj initial = 25°C ITSM(A), I2t (A2s) 1000 TN12 / TYN12 Non repetitive Tj initial=25°C tp=10ms One cycle dI/dt limitation TS12 TN12 / TYN12 ITSM TS12 100 I2t TN12 / TYN12 TS12 Repetitive TC=105°C Number of cycles 10 tp(ms) 0.01 0.10 1.00 10.00 10 100 1000 Figure 13. On-state characteristics (maximum Figure 14. Thermal resistance junction to values) ambient versus copper surface under tab (epoxy printed circuit board FR4, copper thickness: 35 µm) (DPAK and D2PAK) ITM(A) 200 100 Tj max.: Vt0=0.85V Rd=30mΩ Rth(j-a)(°C/W) 100 80 60 Tj=max DPAK 10 Tj=25°C 40 D2PAK 20 VTM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0 2 4 6 8 S(cm²) 10 12 14 16 18 20 5/12 Ordering information scheme TN12, TS12 and TYNx12 Series 2 Ordering information scheme Figure 15. TN12 series TN 12 15 - 600 B (-TR) Standard SCR series Current 12 = 12 A Sensitivity 15 = 15 mA Voltage 600 = 600 V 800 = 800 V 1000 = 1000 V Package B = DPAK G = D2PAK H = IPAK Packing mode Blanck = Tube -TR = Tape and Reel (DPAK and D2PAK) Figure 16. TS12 series TS 12 20 - 600 B (-TR) Sensitive SCR series Current 12 = 12 A Sensitivity 20 = 200 µA Voltage 600 = 600 V 700 = 700 V Package B = DPAK H = IPAK Packing mode Blanck = Tube -TR = Tape and Reel Figure 17. TYNx12 series TYN Standard SCR series Voltage 6 = 600 V 8 = 800 V 10 = 1000 V Current 12 = 12 A Sensitivity Blanck = 15 mA T = 5 mA Packing mode RG = Tube 6 12 T RG 6/12 TN12, TS12 and TYNx12 Series Table 5. Product selector Voltage (xxx) Part Numbers 600 V TN1215-xxxB TN1215-xxxG TN1215-xxxH TS1220-xxxB TS1220-xxxH TYNx12 TYNx12T X X X X X X X X X X X X 700 V 800 V X X X 1000 V Package information Sensitivity 15 mA 15 mA 15 mA 0.2 mA 0.2 mA 15 mA 5 mA Package DPAK D2PAK IPAK DPAK IPAK TO-220AB TO-220AB 3 Package information ● Epoxy meets UL94, V0 TO-220AB dimensions Dimensions Ref. Millimeters Min. A B ØI L F A I4 l3 a1 l2 c2 b2 C Table 6. Inches Min. Typ. Max. 0.625 0.147 Typ. Max. 15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 15.90 0.598 a1 a2 B b1 b2 C c1 c2 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 2.70 0.094 6.60 0.244 3.85 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 a2 e F M b1 e c1 ØI I4 L l2 l3 M 15.80 16.40 16.80 0.622 0.646 0.661 2.65 1.14 1.14 2.60 2.95 0.104 1.70 0.044 1.70 0.044 0.102 0.116 0.066 0.066 7/12 Package information Table 7. IPAK dimensions TN12, TS12 and TYNx12 Series Dimensions Ref. Millimeters Min. A A1 A3 A E B2 L2 C2 Inches Min. Typ. Max. 0.094 0.043 0.051 0.035 0.212 0.037 0.035 Typ. Max. 2.20 0.90 0.70 0.64 5.20 2.40 0.086 1.10 0.035 1.30 0.027 0.90 0.025 5.40 0.204 0.95 0.30 B B2 B3 B5 D C C2 0.45 0.48 6 6.40 2.28 4.40 16.10 9 0.8 0.80 10° 0.60 0.017 0.60 0.019 6.20 0.236 6.60 0.252 0.090 4.60 0.173 0.634 9.40 0.354 1.20 0.031 1 0.023 0.023 0.244 0.260 H L L1 B3 B V1 A1 D E e C A3 e G B5 G H L L1 L2 V1 0.181 0.370 0.047 0.031 0.039 10° 8/12 TN12, TS12 and TYNx12 Series Table 8. DPAK dimensions Package information Dimensions Ref. Millimeters Min. A E B2 C2 L2 A Inches Min. 0.086 0.035 0.001 0.025 0.204 0.017 0.018 0.236 0.251 0.173 0.368 Max. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 Max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 A1 A2 B B2 D H L4 B G A1 R C C2 R C D E A2 0.60 MIN. G H V2 L2 L4 V2 0.80 typ. 0.60 0° 1.00 8° 0.031 typ. 0.023 0° 0.039 8° Figure 18. DPAK footprint dimensions (in millimeters) 6.7 3 3 1.6 2.3 6.7 2.3 1.6 9/12 Package information Table 9. D2PAK dimensions TN12, TS12 and TYNx12 Series Dimensions Ref. Millimeters Min. A A E L2 C2 Inches Min. 0.169 0.098 0.001 0.027 0.048 0.055 Typ. Max. 0.181 0.106 0.009 0.037 Typ. Max. 4.60 2.69 0.23 0.93 4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0.40 0° 1.40 A1 A2 B D L L3 A1 B2 C C2 0.60 1.36 9.35 0.017 0.047 0.352 0.024 0.054 0.368 0.405 0.208 0.624 0.055 0.069 0.016 B2 B G C R D E 10.28 0.393 5.28 0.192 A2 2mm min. FLAT ZONE G L V2 15.85 0.590 1.40 1.75 0.050 0.055 L2 L3 R V2 8° 0° 8° Figure 19. D2PAK footprint dimensions (in millimeters) 16.90 10.30 1.30 5.08 8.90 3.70 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 10/12 TN12, TS12 and TYNx12 Series Ordering information 4 Ordering information Ordering type(1) TN1215-x00B TN1215-x00B-TR TN1215-x00G TN1215-x00G-TR TN1215-x00H TS1220-x00B TS1220-x00B-TR TS1220-x00H TYNx12RG TYNx12TRG Marking(1) TN1215x00 TN1215x00 TN1215x00G TN1215x00G TN1215x00 TS1220x00 TS1220x00 TS1220x00 TYNx12 TYNx12T Package DPAK DPAK D2PAK D PAK IPAK DPAK DPAK IPAK TO-220AB TO-220AB 2 Weight 0.3 g 0.3 g 1.5 g 1.5 g 0.3 g 0.3 g 0.3 g 0.3 g 2.3 g 2.3 g Base qty Delivery mode 75 2500 50 1000 75 75 2500 75 50 50 Tube Tape and reel Tube Tape and reel Tube Tube Tape and reel Tube Tube Tube 1. x (6, 7, 8, 10) depends upon voltage 5 Revision history Date Sep-2000 25-Mar-2005 14-Oct-2005 Revision 3 4 5 Last update. TO-220AB delivery mode changed from bulk to tube. Changed sensitivity values in Table 5 for TYNx12 (30 to 15 mA) and TYNx12T ( 15 to 5 mA). Added ECOPACK statement. Reformatted to current standard. Figure 15: TN12 series product name corrected. Figure 16: TS12 series product name corrected. Description of Changes 08-Mar-2007 6 11/12 TN12, TS12 and TYNx12 Series Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12
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