TS1220

® TS1220-600B SENSITIVE SCR FEATURES IT(RMS) = 12A VDRM/VRRM = 600V IGT < 200µA HIGH ITSM = 110A (tp = 10ms) A A K G DESCRIPTION The TS1220-600B is using a high performance TOPGLASS PNPN technology and is intended for applications requiring high surge capability (like power tools, crowbar protection, capacitive discharge ignition...). DPAK (Plastic) ABSOLUTE RATINGS (limiting values) Symbol VDRM VRRM IT(RMS) IT(AV) ITSM Parameter Repetitive peak off-state voltage RGK = 220 Ω Tj = 125°C RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) Tc= 105°C Tc= 105°C tp = 10 ms tp = 8.3 ms I2t dI/dt Tstg Tj T I2t Value for fusing Critical rate of rise of on-state current dIG /dt = 0.1 A/µs. IG = 10 mA Storage junction temperature range Operating junction temperature range Maximum temperature for soldering during 10s tp = 10 ms Value 600 12 8 110 115 40 50 - 40 to + 150 - 40 to + 125 260 A2s A/µs °C °C Unit V A A A May 1998 - Ed: A3 1/5 TS1220-600B THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-a) Parameter Junction to case for D.C Junction to ambient (S = 0.5 cm2) Value 1.5 70 Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 0.2W PGM = 3 W (tp = 20 µs) IGM = 1.2 A (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD VRG IH VTM IDRM IRRM dV/dt Test Conditions VD=12V RL=140Ω VD=12V RL=140Ω RL=33Ω Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C IG=5mA RGK = 1kΩ Tj= 25°C Tj= 25°C Tj= 25°C Tj= 125°C Tj= 125°C Type MAX MAX MAX MIN MAX MAX MAX MAX MIN Value 200 0.8 0.1 8 5 1.6 10 2 5 Unit µA V V V mA V µA mA V/µs VD=12V(DC) IRG = 10µA IT=50mA ITM= 24A tp= 380µs VD= VDRM VR= VRRM RGK = 220Ω RGK = 220Ω VD=67%VDRM RGK = 220Ω ORDERING INFORMATION Add "-TR" suffix for Tape and Reel shipment TS 12 20 - 600 THYRISTOR SENSITIVE CURRENT SENSITIVITY VOLTAGE B PACKAGE B = DPAK 2/5 TS1220-600B Fig 1: Maximum average power dissipation versus average on-state current. Fig 2: Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase). Note: Rth=0°C/W is infinite heatsink. P(W) α α α α α 14 12 10 8 6 4 2 0 P(W) 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Tcase (°C) Rth=0°C/W α 105 110 115 Rth(j-a)=37°C/W Rth(j-a)=80°C/W 120 125 180° IT(AV)(A) 0 1 2 3 4 5 6 7 8 α α 0 25 50 9 10 11 12 75 Tamb(°C) 100 125 Fig 3-1: Average and D.C. on-state current versus case temperature. Fig 3-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout). IT(AV)(A) 13 12 11 10 9 8 7 6 5 4 3 2 1 0 IT(AV)(A) D.C. α Tcase(°C) 0 25 50 75 100 125 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 α Tamb(°C) 0 25 50 75 100 125 Fig 4: Relative variation of thermal impedance junction to case versus pulse duration. Fig 4-2: Relative variation of thermal impedance junction to ambient versus pulse duration (recomended pad layout). K=[Zth(j-a)/Rth(j-a)] 1.00 1.0 K=[Zth(j-c)/Rth(j-c)] 0.5 0.10 0.2 tp(s) 0.1 1E-3 1E-2 1E-1 1E+0 0.01 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2 3/5 TS1220-600B Fig 5: Relative variation of gate trigger current and holding current versus junction temperature. IGT,IH[Tj]/IGT,IH[Tj=25°C] 2.0 1.8 IGT 1.6 1.4 1.2 IH 1.0 0.8 0.6 0.4 0.2 Tj(°C) 0.0 -40 -20 0 20 40 60 Fig 6: Relative variation of holding current versus gate-cathode resistance (typical values). 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 RGK( Ω) IH[RGK] / IH [RGK=1kΩ] Tj=25°C 80 100 120 140 0.0 1E+1 1E+2 1E+3 1E+4 Fig 7: Non repetitive surge peak on-state current versus number of cycles. Fig 8: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp