TS271AID

TS271 CMOS Programmable Low Power Single Operational Amplifier ■ ■ ■ ■ ■ ■ ■ Offset null capability (by external compensation) Dynamic characteristics adjustable ISET Consumption current and dynamic parameters are stable regarding the voltage power supply variations Output voltage can swing to ground Very large ISET range Stable and low offset voltage Three input offset voltage selections D SO-8 (Plastic Micropackage) N DIP8 (Plastic Package) Description The TS271 is a low cost, low power single operational amplifier designed to operate with single or dual supplies. This operational amplifier uses the ST silicon gate CMOS process giving it an excellent consumption-speed ratio. This amplifier is ideally suited for low consumption applications. The power supply is externally programmable with a resistor connected between pins 8 and 4. It allows to choose the best consumption-speed ratio and supply current can be minimized according to the required speed. This device is specified for the following ISET current values: 1.5µA, 25µA, 130µA. This CMOS amplifier offers very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature see Figure 8, Figure 19, Figure 30. Pin Connections (top view) 1 2 3 4 + 8 7 6 5 1 - Offset Null 1 2 - Inverting Input 1 3 - Non-inverting Input 1 4 - V CC 5 - Offset Null 2 6 - Output 7 - V CC+ 8 - I Set Order Codes Part Number TS271CN/ACN TS271CD/CDT/ACD/ACDT TS271IN/AIN/ TS271ID/IDT/AID/AIDT/BID/BIDT TS271BMD Temperature Range 0°C, +70°C -40°C, +125°C -55°C, +125°C Package DIP SO DIP SO SO Packaging Tube Tube and Tape & Reel Tube Tube and Tape & Reel Tube March 2005 Revision 2 1/17 TS271 Block Diagram 1 Block Diagram Figure 1. Application block diagram 2/17 Absolute Maximum Ratings TS271 2 Absolute Maximum Ratings Table 1. Key parameters and their absolute maximum ratings Symbol VCC+ Vid Vi Io Iin Toper Tstg Supply Voltage 3 Parameter 1 2 TS271C/AC/BC TS271I/AI/BI 18 ±18 -0.3 to 18 ±30 ±5 TS271M/AM/BM Unit V V V mA mA Differential Input Voltage Input Voltage Input Current Output Current for VCC+ ≥ 15V Operating Free-Air Temperature Range Storage Temperature Range 0 to +70 -40 to +125 -65 to +150 -55 to +125 °C °C 1) All values, except differential voltage are with respect to network ground terminal. 2) Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. 3) The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage. Table 2. Operating conditions Symbol VCC + Parameter Supply Voltage Common Mode Input Voltage Range Value 3 to 16 0 to VCC - 1.5 + Unit V V Vicm 3/17 TS271 Figure 2. Schematic Diagram Absolute Maximum Ratings 4/17 Absolute Maximum Ratings Figure 3. Offset voltage null circuit VCC+ VCC+ TS271 Figure 5. Resistor biasing 5 + 1 8 25kΩ VCC VO VO + + R set VCC- R set R set VCC- R set CONNECTED TO GROUND R set CONNECTED TO VCC- (R set VALUE : SEE Fig. 1) OFFSET COMPENSATION GUARANTEED FOR TS271BCX (ISET > 25µA), TS271ACX (ISET > 90µA) Figure 4. Offset voltage null circuit - Figure 6. Rset connected to VccVCC = +3V VCC = +5V VCC = +16V VCC = +10V 5 + 1 8 25kΩ VCC- Rset 10MΩ R set 1MΩ 100kΩ OFFSET COMPENSATION GUARANTEED FOR TS271BCX (ISET > 25µA), TS271ACX (ISET > 90µA) 10kΩ 0.1µA 1 µA 10µA 100µA Iset 5/17 TS271 Electrical Characteristics 3 Electrical Characteristics Table 3. for ISET = 1.5µA - VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified) TS271C/AC/BC Symbol Parameter Min. Input Offset Voltage VO = 1.4V, Vic = 0V Vio Tmin ≤ Tamb ≤ Tmax TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM 1 TS271I/AI/BI TS271M/AM/BM Min. Typ. Max. 10 5 2 12 6.5 3.5 Unit Typ. 1.1 0.9 0.25 Max. 10 5 2 12 6.5 3 1.1 0.9 0.25 mV DVio Iio Input Offset Voltage Drift Input Offset Current note Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax 2 1 100 1 150 8.8 8.7 9 8.8 8.6 50 30 20 100 30 20 2 1 200 1 300 9 µV/°C pA Iib Input Bias Current - see note 1 Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax High Level Output Voltage Vid = 100mV, RL = 1MΩ Tmin ≤ Tamb ≤ Tmax Low Level Output Voltage Vid = -100mV Large Signal Voltage Gain ViC = 5V, RL = 1MΩ, Vo = 1V to 6V Tmin ≤ Tamb ≤ Tmax Gain Bandwidth Product Av = 40dB, RL = 1MΩ, CL = 100pF, fin = 100kHz Common Mode Rejection Ratio ViC = 1V to 7.4V, Vo = 1.4V Supply Voltage Rejection Ratio VCC+ = 5V to 10V, Vo = 1.4V Supply Current (per amplifier) Av = 1, no load, Vo = 5V Tmin ≤ Tamb ≤ Tmax Output Short Circuit Current Vo = 0V, Vid = 100mV Output Sink Current Vo = VCC, Vid = -100mV Slew Rate at Unity Gain RL = 1MΩ, CL = 100pF, Vi = 3 to 7V Phase Margin at Unity Gain Av = 40dB, RL = 1MΩ Overshoot Factor Av = 40dB, RL = 1MΩ Equivalent Input Noise Voltage f = 1kHz, Rs = 100Ω CL = 10pF CL = 100pF CL = 10pF CL = 100pF pA VOH VOL Avd GBP CMR SVR ICC Io Isink SR V mV V/mV MHz dB dB 50 100 0.1 60 60 80 80 10 15 17 60 60 0.1 80 80 10 15 18 µA mA mA V/µs Degrees 60 45 0.04 35 10 40 70 30 60 45 0.04 35 10 40 70 30 φm KOV % nV ----------Hz en 1) Maximum values including unavoidable inaccuracies of the industrial test. 6/17 Electrical Characteristics Typical characteristics for ISET = 1.5µA Figure 7. Supply current versus supply voltage 20 OUTPUT VOLTAGE, VOH (V) TS271 Figure 10. High level output voltage versus high level output current 20 Tamb = 25 ° C 16 12 8 4 0 -50 V id = 100mV VCC = 16V SUPPLY CURRENT, ICC (µ A) 15 Tamb = 25°C AV = 1 VO = VCC / 2 10 VCC = 10V 5 -40 -30 -20 -10 0 0 4 8 12 16 OUTPUT CURRENT, I OH (mA) SUPPLY VOLTAGE, V (V) CC Figure 8. Input bias current versus free air temperature 100 Figure 11. Low level output voltage versus low level output current O U T P U T V O L T A G E , VOL(V ) 1 .0 0 .8 0 .6 0 .4 0 .2 T amb = 2 5 °C V ic = 0 .5 V V id = -1 0 0 m V 1 2 O U T P U T C U R R E N T , I OL (m A ) 3 VC C = 3 V INPUT BIAS CURRENT, IIB (pA) VCC = 10V V i = 5V V CC = 5V 10 1 0 25 50 75 100 125 TEMPERATURE, T amb ( °C) Figure 9. High level output voltage versus high level output current 5 Tamb = 25 ° C V id = 100mV VCC= 5V Figure 12. Low level output voltage versus low level output current O U T P U T V O L T A G E , V OL (V ) 3 V C C = 10V OUTPUT VOLTAGE, VOH (V) 4 3 2 1 0 -10 2 VC C = 1 6 V 1 Tamb = 2 5 °C V i = 0 .5 V V = -1 0 0 m V id 0 4 8 12 16 20 VCC = 3V -8 -6 -4 -2 0 OUTPUT CURRENT, I OH (mA) O U T P U T C U R R E N T , I OL (m A ) 7/17 TS271 Figure 13. Open loop frequency response and phase shift Electrical Characteristics Figure 16. Phase margin versus capacitive load P H A S E M A R G IN , φ m (D e g re e s ) 40 Ta m b = 2 5 °C RL = 1M Ω AV = 1 VC C = 10V 50 30 G A IN (d B ) PHASE 20 10 0 -1 0 10 2 10 3 T a m b = 2 5 °C V C C+ = 1 0 V R L = 1M Ω C L = 100pF A VC L = 100 Phase Margin 45 90 135 180 P H A S E (D e g re e s ) 40 G A IN 0 30 20 Gain Bandwidth Product 10 4 10 5 10 6 10 0 F R E Q U E N C Y , f (H z ) 20 40 60 L 80 (p F ) 100 C A P A C IT A N C E , C Figure 14. Gain bandwidth product versus supply voltage G A IN B A N D W . P R O D ., G B P (M H z ) 120 Ta m b = 2 5 °C RL = 1M Ω CL = 1 0 0 p F AV = 1 Figure 17. Slew rate versus supply voltage 0.07 S L E W R A T E S S R (V / µs ) 0.06 0.05 0.04 0.03 0.02 0.01 4 SR 100 , SR Ta m b = 2 5 °C R L = 1M Ω CL = 1 0 0 p F 6 8 10 12 S U P P L Y V O L T A G E , VC C 14 (V ) 16 80 60 40 0 4 8 12 16 S U P P L Y V O L T A G E , V C C (V ) Figure 15. Phase margin versus supply voltage P H A S E M A R G IN , φ m (D e g re e s ) 10 8 6 4 2 Ta m b = 2 5 °C R L = 1M Ω CL = 1 0 0 p F AV = 1 4 8 12 16 0 S U P P L Y V O L T A G E , V C C (V ) 8/17 Electrical Characteristics TS271 4 Electrical Characteristics Table 4. for ISET = 25µA - VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified) TS271C/AC/BC Symbol Parameter Min. Input Offset Voltage VO = 1.4V, Vic = 0V Vio Tmin ≤ Tamb ≤ Tmax TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM TS271B/C/I/M TS271AC/AI/AM TS271BC/BI/BM 1 TS271I/AI/BI TS271M/AM/BM Min. Typ. Max. 10 5 2 12 6.5 3.5 Unit Typ. 1.1 0.9 0.25 Max. 10 5 2 12 6.5 3 1.1 0.9 0.25 mV DVio Iio Input Offset Voltage Drift Input Offset Current note Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax 2 1 100 1 150 8.7 8.6 8.9 8.7 8.5 50 30 20 50 30 10 2 1 200 1 300 8.9 µV/°C pA Iib Input Bias Current - see note 1 Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax High Level Output Voltage Vid = 100mV, RL = 100kΩ Tmin ≤ Tamb ≤ Tmax Low Level Output Voltage Vid = -100mV Large Signal Voltage Gain ViC = 5V, RL = 100kΩ, Vo = 1V to 6V Tmin ≤ Tamb ≤ Tmax Gain Bandwidth Product Av = 40dB, RL = 100kΩ, CL = 100pF, fin = 100kHz Common Mode Rejection Ratio ViC = 1V to 7.4V, Vo = 1.4V Supply Voltage Rejection Ratio VCC+ = 5V to 10V, Vo = 1.4V Supply Current (per amplifier) Av = 1, no load, Vo = 5V Tmin ≤ Tamb ≤ Tmax Output Short Circuit Current Vo = 0V, Vid = 100mV Output Sink Current Vo = VCC, Vid = -100mV Slew Rate at Unity Gain RL = 100kΩ, CL = 100pF, Vi = 3 to 7V Phase Margin at Unity Gain Av = 40dB, RL = 100kΩ Overshoot Factor Av = 40dB, RL = 100kΩ Equivalent Input Noise Voltage f = 1kHz, Rs = 100Ω CL = 10pF CL = 100pF CL = 10pF CL = 100pF pA VOH VOL Avd GBP CMR SVR ICC Io Isink SR V mV V/mV MHz dB dB 50 50 0.7 60 60 80 80 150 200 250 60 60 0.7 80 80 150 200 300 µA mA mA V/µs Degrees 60 45 0.6 50 30 30 50 38 60 45 0.6 50 30 30 50 38 φm KOV % nV ----------Hz en 1) Maximum values including unavoidable inaccuracies of the industrial test. 9/17 TS271 Typical characteristics for ISET = 25µA Figure 18. Supply current versus supply voltage 200 Electrical Characteristics Figure 21. High level output voltage versus high level output current 20 OUTPUT VOLTAGE, VOH (V) Tamb = 25 ° C 16 12 8 4 0 -50 V id = 100mV VCC = 16V SUPPLY CURRENT, ICC (µ A) 150 100 VCC = 10V 50 Tamb = 25°C AV = 1 VO = VCC / 2 4 8 12 16 -40 -30 -20 -10 0 0 OUTPUT CURRENT, I OH (mA) SUPPLY VOLTAGE, VCC (V) Figure 19. Input bias current versus free air temperature 100 Figure 22. Low level output voltage versus low level output current 1 .0 0 .8 0 .6 0 .4 0 .2 T amb = 2 5 °C V ic = 0 .5 V V id = -1 0 0 m V 1 2 O U T P U T C U R R E N T , I OL (m A ) 3 VC C = 3 V INPUT BIAS CURRENT, IIB (pA) VCC = 10V V i = 5V O U T P U T V O L T A G E , VOL(V ) V CC = 5V 10 1 0 25 50 75 100 125 TEMPERATURE, T amb ( °C) Figure 20. High level output voltage versus high level output current 5 Figure 23. Low level output voltage versus low level output current O U T P U T V O L T A G E , V OL (V ) 3 V C C = 10V OUTPUT VOLTAGE, VOH (V) 4 3 2 1 0 -10 Tamb = 25 ° C V id = 100mV VCC= 5V 2 VC C = 1 6 V 1 Tamb = 2 5 °C V i = 0 .5 V V = -1 0 0 m V id 0 4 8 12 16 20 VCC = 3V -8 -6 -4 -2 0 OUTPUT CURRENT, I OH (mA) O U T P U T C U R R E N T , I OL (m A ) 10/17 Electrical Characteristics Figure 24. Open loop frequency response and phase shift 50 TS271 Figure 27. Phase margin versus capacitive load P H A S E M A R G IN , φ m (D e g re e s ) 50 Ta m b = 2 5 °C RL = 100kΩ AV = 1 VC C = 10V P H A S E (D e g re e s ) 40 G A IN 30 PHASE T a m b = 2 5 °C V C C+ = 1 0 V R L = 100kΩ C L = 100pF A VC L = 100 2 3 4 Phase Margin 0 45 90 135 40 G A IN (d B ) 20 10 0 -1 0 10 30 Gain Bandwidth Product 10 10 5 10 6 10 180 20 10 7 0 20 40 60 L 80 (p F ) 100 F R E Q U E N C Y , f (H z ) C A P A C IT A N C E , C Figure 25. Gain bandwidth product versus supply voltage G A IN B A N D W . P R O D ., G B P (M H z ) 0.9 0.8 0.7 Ta m b = 2 5 °C RL = 100k Ω CL = 1 0 0 p F AV = 1 Figure 28. Slew rate versus supply voltage 1.0 S L E W R A T E S , S R (V / µ s ) 0.8 0.6 0.4 0.2 0 SR SR 0.6 0.5 0.4 0 4 8 12 16 S U P P L Y V O L T A G E , V C C (V ) Ta m b = 2 5 °C R L = 100k Ω CL = 1 0 0 p F 4 6 8 10 12 S U P P L Y V O L T A G E , VC C 14 (V ) 16 Figure 26. Phase margin versus supply voltage P H A S E M A R G IN , φ m (D e g re e s ) 50 40 30 20 10 Ta m b = 2 5 °C R L = 100kΩ CL = 1 0 0 p F AV = 1 4 8 12 16 0 S U P P L Y V O L T A G E , V C C (V ) 11/17 TS271 Electrical Characteristics 5 Electrical Characteristics Table 5. for ISET = 130µA - VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified) TS271C/AC/BC Symbol Parameter Min. Input Offset Voltage VO = 1.4V, Vic = 0V Vio Tmin ≤ Tamb ≤ Tmax TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM TS271B/C/I/M TS271AC/AI/AM TS271BC/BI/BM 1 TS271I/AI/BI TS271M/AM/BM Min. Typ. Max. 10 5 2 12 6.5 3.5 Unit Typ. 1.1 0.9 0.25 Max. 10 5 2 12 6.5 3 1.1 0.9 0.25 mV DVio Iio Input Offset Voltage Drift Input Offset Current note Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax 2 1 100 1 150 8.2 8.1 8.4 8.2 8 50 10 7 15 10 6 2 1 200 1 300 8.4 µV/°C pA Iib Input Bias Current - see note 1 Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax High Level Output Voltage Vid = 100mV, RL = 10kΩ Tmin ≤ Tamb ≤ Tmax Low Level Output Voltage Vid = -100mV Large Signal Voltage Gain ViC = 5V, RL = 10kΩ, Vo = 1V to 6V Tmin ≤ Tamb ≤ Tmax Gain Bandwidth Product Av = 40dB, RL = 10kΩ, CL = 100pF, fin = 100kHz Common Mode Rejection Ratio ViC = 1V to 7.4V, Vo = 1.4V Supply Voltage Rejection Ratio VCC+ = 5V to 10V, Vo = 1.4V Supply Current (per amplifier) Av = 1, no load, Vo = 5V Tmin ≤ Tamb ≤ Tmax Output Short Circuit Current Vo = 0V, Vid = 100mV Output Sink Current Vo = VCC, Vid = -100mV Slew Rate at Unity Gain RL = 10kΩ, CL = 100pF, Vi = 3 to 7V Phase Margin at Unity Gain Av = 40dB, RL = 10kΩ Overshoot Factor Av = 40dB, RL = 10kΩ Equivalent Input Noise Voltage f = 1kHz, Rs = 100Ω CL = 10pF CL = 100pF CL = 10pF CL = 100pF pA VOH VOL Avd GBP CMR SVR ICC Io Isink SR V mV V/mV MHz dB dB 50 15 2.3 60 60 80 70 800 1300 1400 60 60 2.3 80 70 800 1300 1500 µA mA mA V/µs Degrees 60 45 4.5 65 30 30 50 30 60 45 4.5 65 30 30 50 30 φm KOV % nV ----------Hz en 1) Maximum values including unavoidable inaccuracies of the industrial test. 12/17 Electrical Characteristics Typical characteristics for ISET = 130µA Figure 29. Supply current (each amplifier) versus supply voltage OUTPUT VOLTAGE, VOH (V) 1.0 TS271 Figure 32. High level output voltage versus high level output current 20 Tamb = 25 ° C 16 12 8 4 0 -50 16 V id = 100mV VCC = 16V SUPPLY CURRENT, ICC (mA) 0.8 0.6 0.4 0.2 0 Tamb = 25°C AV = 1 VO = VCC / 2 4 8 12 VCC = 10V -40 -30 -20 -10 0 OUTPUT CURRENT, I OH (mA) SUPPLY VOLTAGE, VCC (V) Figure 33. Low level output voltage versus low level output current 1 .0 0 .8 0 .6 0 .4 0 .2 T amb = 2 5 °C V ic = 0 .5 V V id = -1 0 0 m V 1 2 O U T P U T C U R R E N T , I OL (m A ) 3 VC C = 3 V Figure 30. Input bias current versus free air temperature 100 INPUT BIAS CURRENT, IIB (pA) VCC = 10V V i = 5V O U T P U T V O L T A G E , VOL(V ) V CC = 5V 10 0 1 25 50 75 100 125 TEMPERATURE, T amb ( °C) Figure 31. High level output voltage versus high level output current 5 Figure 34. Low level output voltage versus low level output current O U T P U T V O L T A G E , V OL (V ) 3 V C C = 10V OUTPUT VOLTAGE, VOH (V) 4 3 2 1 0 -10 Tamb V id = 100mV VCC= 5V = 25 ° C 2 VC C = 1 6 V 1 Tamb = 2 5 °C V i = 0 .5 V V = -1 0 0 m V id 0 4 8 12 16 20 VCC = 3V -8 -6 -4 -2 0 O U T P U T C U R R E N T , I OL (m A ) OUTPUT CURRENT, I OH (mA) 13/17 TS271 Figure 35. Open loop frequency response and phase shift 50 Electrical Characteristics Figure 38. Phase margin versus capacitive load P H A S E M A R G IN , φ m (D e g re e s ) 70 Ta m b = 2 5 °C RL = 10k Ω AV = 1 VC C = 10V P H A S E (D e g re e s ) 40 G A IN 30 PHASE T a m b = 2 5 °C V C C+ = 1 0 V R L = 10k Ω C L = 100pF A VC L = 100 2 3 4 Phase Margin 0 45 90 135 60 G A IN (d B ) 20 10 0 -1 0 10 50 40 Gain Bandwidth Product 10 10 5 10 6 10 180 10 7 30 0 20 40 60 L F R E Q U E N C Y , f (H z ) 80 (p F ) 100 C A P A C IT A N C E , C Figure 36. Gain bandwidth product versus supply voltage G A IN B A N D W . P R O D ., G B P (M H z ) 5 4 3 Ta m b = 2 5 °C RL = 10k Ω CL = 1 0 0 p F AV = 1 Figure 39. Slew rate versus supply voltage 5 S L E W R A T E S , S R (V / µ s ) SR 4 3 2 1 0 Ta m b = 2 5 °C R L = 10k Ω CL = 1 0 0 p F 4 6 8 10 12 S U P P L Y V O L T A G E , VC C 14 (V ) 16 SR 2 1 0 4 8 12 16 S U P P L Y V O L T A G E , V C C (V ) Figure 37. Phase margin versus supply voltage P H A S E M A R G IN , φ m (D e g re e s ) 50 40 30 20 10 Ta m b = 2 5 °C R L = 10k Ω CL = 1 0 0 p F AV = 1 4 8 12 16 0 S U P P L Y V O L T A G E , V C C (V ) 14/17 Package Mechanical Data TS271 6 Package Mechanical Data Plastic DIP-8 MECHANICAL DATA mm. DIM. MIN. A a1 B B1 b b1 D E e e3 e4 F I L Z 0.44 3.3 1.6 0.017 8.8 2.54 7.62 7.62 7.1 4.8 0.130 0.063 0.38 0.7 1.39 0.91 0.5 0.5 9.8 0.346 0.100 0.300 0.300 0.280 0.189 0.015 1.65 1.04 TYP 3.3 0.028 0.055 0.036 0.020 0.020 0.386 0.065 0.041 MAX. MIN. TYP. 0.130 MAX. inch P001F 15/17 TS271 Package Mechanical Data Package Mechanical Data SO-8 MECHANICAL DATA DIM. A A1 A2 B C D E e H h L k ddd 0.1 5.80 0.25 0.40 mm. MIN. 1.35 0.10 1.10 0.33 0.19 4.80 3.80 1.27 6.20 0.50 1.27 8˚ (max.) 0.04 0.228 0.010 0.016 TYP MAX. 1.75 0.25 1.65 0.51 0.25 5.00 4.00 MIN. 0.053 0.04 0.043 0.013 0.007 0.189 0.150 0.050 0.244 0.020 0.050 inch TYP. MAX. 0.069 0.010 0.065 0.020 0.010 0.197 0.157 0016023/C 16/17 Revision History TS271 7 Revision History Date 01 Nov. 2001 01 March 2005 Revision 1 2 First Release • • Application block diagram updated on Figure 2 on page 4 Schematic Diagram updated on Figure 4 on page 5 Description of Changes Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 17/17