TS271C,I,M
CMOS PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIER
s OFFSET NULL CAPABILITY (by external
compensation)
s DYNAMIC CHARACTERISTICS
ADJUSTABLE ISET
s CONSUMPTION CURRENT AND DYNAMIC
PARAMETERS ARE STABLE REGARDING THE VOLTAGE POWER SUPPLY VARIATIONS OUTPUT VOLTAGE CAN SWING TO GROUND VERY LARGE ISET RANGE STABLE AND LOW OFFSET VOLTAGE THREE INPUT OFFSET VOLTAGE SELECTIONS
s s s s
N DIP8 (Plastic Package)
DESCRIPTION The TS271 is a low cost, low power single opertional amplifier designed to operate with single or dual supplies. This operational amplifier uses the ST silicon gate CMOS process giving it an excellent consumption-speed ratio. This amplifier is ideally suited for low consumption applications. The power supply is externally programmable with a resistor connected between pins 8 and 4. It allows to choose the best consumption-speed ratio and supply current can be minimized according to the required speed. This device is specified for the following ISET current values : 1.5µA, 25µA, 130µA. This CMOS amplifier offers very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature (see figure 3). ORDER CODE
Package Part Number Temperature Range N TS271C/AC/BC 0°C, +70°C TS271I/AI/BI -40°C, +125°C TS271M/AM/BM -55°C, +125°C Example : TS271ACN • • • D • • •
1 - Offset Null 1 2 - Inverting Input 1 3 - Non-inverting Input 1 4 - V CC 5 - Offset Null 2 6 - Output 7-V +
CC
D SO8 (Plastic Micropackage)
PIN CONNECTIONS (top view)
1 2 3 4 +
8 7 6 5
N = Dual in Line Package (DIP) D = Small Outline Package (SO) - also available in Tape & Reel (DT)
8 - I Set
November 2001
1/15
TS271C,I,M
BLOCK DIAGRAM
VCC
Current source
xI
Input differential
Second stage
Output stage
Output
VCC
E E
ABSOLUTE MAXIMUM RATINGS
Symbol VCC Vid Vi Io Iin Toper Tstg
+
Parameter Supply Voltage
3) 1) 2)
TS271C/AC/BC
TS271I/AI/BI 18 ±18 -0.3 to 18 ±30 ±5
TS271M/AM/BM
Unit V V V mA mA
Differential Input Voltage Input Voltage
Output Current for VCC+ ≥ 15V Input Current Operating Free-Air Temperature Range Storage Temperature Range 0 to +70
-40 to +125 -65 to +150
-55 to +125
°C °C
1. All values, except differential voltage are with respect to network ground terminal. 2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. 3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage.
OPERATING CONDITIONS
Symbol VCC+ Vicm Supply Voltage Common Mode Input Voltage Range Parameter Value 3 to 16 0 to VCC+ - 1.5 Unit V V
2/15
SCHEMATIC DIAGRAM
VCC
T24
T 25
T 26 T6 T8
T27 T5
T 10 T 15
R2 T 28 T1
Input
T 18
T2
Input R1 C1
T11
T 12
T17
T7
T 23 T3
Output
T19 T4
T16
T9 T 13 T 14
T20
T 22
T21
T29
VCC
TS271C,I,M
3/15
TS271C,I,M
OFFSET VOLTAGE NULL CIRCUIT RESISTOR BIASING
VCC+ VCC+
5 + 1 8 25kΩ
VCC
VO VO
+
+
R set
VCC-
R set
R set
VCC-
R set CONNECTED TO GROUND
R set CONNECTED TO VCC- (R set VALUE : SEE Fig. 1)
OFFSET COMPENSATION GUARANTEED FOR TS271BCX (ISET > 25µA), TS271ACX (ISET > 90µA)
Figure 1 : RSET Connected to VCC-
VCC = +3V VCC = +5V Rset
VCC = +16V VCC = +10V
10MΩ
1MΩ
100kΩ
10kΩ 0.1µA 1µA 10µA 100µA Iset
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TS271C,I,M
ELECTRICAL CHARACTERISTICS for ISET = 1.5µA VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified)
TS271C/AC/BC Symbol Parameter Min. Input Offset Voltage VO = 1.4V, Vic = 0V Vio Tmin ≤ Tamb ≤ Tmax TS271C/I/M TS271AC/AI/AM TS271B/C/I/M TS271C/I/M TS271AC/AI/AM TS271B/C/I/M
1)
TS271I/AI/BI TS271M/AM/BM Min. Typ. Max. 10 5 2 12 6.5 3.5
Unit
Typ. 1.1 0.9 0.25
Max. 10 5 2 12 6.5 3
1.1 0.9 0.25
mV
DVio Iio
Input Offset Voltage Drift Input Offset Current note Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax
2 1 100 1 150 8.8 8.7 9 8.8 8.6 50 30 20 100 30 20
2 1 200 1 300 9
µV/°C pA
Iib
Input Bias Current - see note 1 Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax High Level Output Voltage Vid = 100mV, RL = 1MΩ Tmin ≤ Tamb ≤ Tmax Low Level Output Voltage Vid = -100mV Large Signal Voltage Gain ViC = 5V, RL = 1MΩ, Vo = 1V to 6V Tmin ≤ Tamb ≤ Tmax Gain Bandwidth Product Av = 40dB, RL = 1MΩ, CL = 100pF, fin = 100kHz Common Mode Rejection Ratio ViC = 1V to 7.4V, Vo = 1.4V Supply Voltage Rejection Ratio VCC+ = 5V to 10V, Vo = 1.4V Supply Current (per amplifier) Av = 1, no load, Vo = 5V Tmin ≤ Tamb ≤ Tmax Output Short Circuit Current Vo = 0V, Vid = 100mV Output Sink Current Vo = VCC, Vid = -100mV Slew Rate at Unity Gain RL = 1MΩ, CL = 100pF, Vi = 3 to 7V Phase Margin at Unity Gain Av = 40dB, RL = 1MΩ CL = 10pF CL = 100pF Overshoot Factor Av = 40dB, RL = 1MΩ CL = 10pF CL = 100pF Equivalent Input Noise Voltage f = 1kHz, Rs = 100Ω 60 60
pA
VOH VOL Avd GBP CMR SVR
V
50 100
mV
V/mV
0.1 80 80 10 15 17 60 60
0.1 80 80 10 15 18
MHz dB dB
ICC Io Isink SR φm
µA
60 45 0.04 35 10 40 70 30
60 45 0.04 35 10 40 70 30
mA mA V/µs Degrees
KOV
% nV ----------Hz
en
1.
Maximum values including unavoidable inaccuracies of the industrial test.
5/15
TS271C,I,M
TYPICAL CHARACTERISTICS for ISET = 1.5µA Figure 2 : Supply Current versus Supply Voltage Figure 4b : High Level Output Voltage versus High Level Output Current
20 OUTPUT VOLTAGE, VOH (V)
20
SUPPLY CURRENT, ICC (µ A)
15
Tamb = 25°C AV = 1 VO = VCC / 2
Tamb = 25 ° C 16 12 8 4 0 -50 V id = 100mV VCC = 16V
10
VCC = 10V
5
0
4
8
12
16
-40
-30
-20
-10
0
SUPPLY VOLTAGE, V C (V) C
OUTPUT CURRENT, I OH (mA)
Figure 3 : Input Bias Current versus Free Air Temperature
100 INPUT BIAS CURRENT, IIB (pA) VCC = 10V V i = 5V
Figure 5a : Low Level Output Voltage versus Low Level Output Current
1 .0 0 .8 0 .6 0 .4 0 .2 T amb = 2 5 °C V ic = 0 .5 V V id = -1 0 0 m V 1 2 O U T P U T C U R R E N T , I OL (m A ) 3 VC C = 3 V
O U T P U T V O L T A G E , VOL(V )
V
CC
= 5V
10
1
25
50
75
100
125
0
TEMPERATURE, T amb ( °C)
Figure 4 : High Level Output Voltage versus High Level Output Current
5 OUTPUT VOLTAGE, VOH (V) 4 3 2 1 0 -10 VCC = 3V Tamb = 25 ° C V id = 100mV VCC= 5V
Figure 5b : Low Level Output Voltage versus Low Level Output Current
O U T P U T V O L T A G E , V OL (V ) 3 V C C = 10V
2
VC C = 1 6 V
1 Tamb = 2 5 °C V i = 0 .5 V V = -1 0 0 m V id 0 4 8 12 16 20
-8
-6
-4
-2
0
OUTPUT CURRENT, I OH (mA)
O U T P U T C U R R E N T , I OL (m A )
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TS271C,I,M
Figure 6 : Open Loop Frequency Response and Phase Shift Figure 9 : Phase Margin versus Capacitive Load
P H A S E M A R G IN , φ m (D e g re e s )
40 Ta m b = 2 5 °C RL = 1M Ω AV = 1 VC C = 10V
50 P H A S E (D e g re e s ) 40 30 G A IN (d B ) PHASE 20 10 0 -1 0 10 2 10 3 T a m b = 2 5 °C V C C+ = 1 0 V R L = 1M Ω C L = 100pF A VC L = 100 Phase Margin G A IN 0 45 90 135 180
30
20
Gain Bandwidth Product 10 4 10 5 10 6
10
0
F R E Q U E N C Y , f (H z )
20
40
60
L
80 (p F )
100
C A P A C IT A N C E , C
Figure 7 : Gain Bandwidth Product versus Supply Voltage
G A IN B A N D W . P R O D ., G B P (M H z ) 120 Ta m b = 2 5 °C RL = 1M Ω CL = 1 0 0 p F AV = 1
Figure 10 : Slew Rate versus Supply Voltage
0.07 S L E W R A T E S S R (V / µs ) 0.06 0.05 0.04 0.03 0.02 0.01 4 ,
SR
100
80
SR Ta m b = 2 5 °C R L = 1M Ω CL = 1 0 0 p F
6 8 10 12 S U P P L Y V O L T A G E , VC C 14 (V ) 16
60
40 0 4 8 12 16 S U P P L Y V O L T A G E , V C C (V )
Figure 8 : Phase Margin versus Supply Voltage
P H A S E M A R G IN , φ m (D e g re e s )
10 8 6
4 2
Ta m b = 2 5 °C R L = 1M Ω CL = 1 0 0 p F AV = 1 4 8 12 16
0
S U P P L Y V O L T A G E , V C C (V )
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TS271C,I,M
ELECTRICAL CHARACTERISTICS for ISET = 25µA VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified)
TS271C/AC/BC Symbol Parameter Min. Input Offset Voltage VO = 1.4V, Vic = 0V Vio Tmin ≤ Tamb ≤ Tmax TS271C/I/M TS271AC/AI/AM TS271C/I/M TS271B/C/I/M TS271AC/AI/AM TS271B/C/I/M
1)
TS271I/AI/BI TS271M/AM/BM Min. Typ. Max. 10 5 2 12 6.5 3.5
Unit
Typ. 1.1 0.9 0.25
Max. 10 5 2 12 6.5 3
1.1 0.9 0.25
mV
DVio Iio
Input Offset Voltage Drift Input Offset Current note Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax
2 1 100 1 150 8.7 8.6 8.9 8.7 8.5 50 30 20 50 30 10
2 1 200 1 300 8.9
µV/°C pA
Iib
Input Bias Current - see note 1 Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax High Level Output Voltage Vid = 100mV, RL = 100kΩ Tmin ≤ Tamb ≤ Tmax Low Level Output Voltage Vid = -100mV Large Signal Voltage Gain ViC = 5V, RL = 100kΩ, Vo = 1V to 6V Tmin ≤ Tamb ≤ Tmax Gain Bandwidth Product Av = 40dB, RL = 100kΩ, CL = 100pF, fin = 100kHz Common Mode Rejection Ratio ViC = 1V to 7.4V, Vo = 1.4V Supply Voltage Rejection Ratio VCC+ = 5V to 10V, Vo = 1.4V Supply Current (per amplifier) Av = 1, no load, Vo = 5V Tmin ≤ Tamb ≤ Tmax Output Short Circuit Current Vo = 0V, Vid = 100mV Output Sink Current Vo = VCC, Vid = -100mV Slew Rate at Unity Gain RL = 100kΩ, CL = 100pF, Vi = 3 to 7V Phase Margin at Unity Gain Av = 40dB, RL = 100kΩ CL = 10pF CL = 100pF Overshoot Factor Av = 40dB, RL = 100kΩ CL = 10pF CL = 100pF Equivalent Input Noise Voltage f = 1kHz, Rs = 100Ω 60 60
pA
VOH VOL Avd GBP CMR SVR
V
50 50
mV
V/mV
0.7 80 80 150 200 250 60 60
0.7 80 80 150 200 300
MHz dB dB
ICC Io Isink SR φm
µA
60 45 0.6 50 30 30 50 38
60 45 0.6 50 30 30 50 38
mA mA V/µs Degrees
KOV
% nV ----------Hz
en
1.
Maximum values including unavoidable inaccuracies of the industrial test.
8/15
TS271C,I,M
TYPICAL CHARACTERISTICS for ISET = 25µA Figure 11 : Supply Current versus Supply Voltage
200 SUPPLY CURRENT, ICC (µ A) OUTPUT VOLTAGE, VOH (V)
Figure 13b : High Level Output Voltage versus High Level Output Current
20 Tamb = 25 ° C 16 12 8 4 0 -50 V id = 100mV VCC = 16V
150
100
VCC = 10V
50
Tamb = 25°C AV = 1 VO = VCC / 2 4 8 12 16
0
-40
-30
-20
-10
0
SUPPLY VOLTAGE, VCC (V)
OUTPUT CURRENT, I OH (mA)
Figure 12 : Input Bias Current versus Free Air Temperature
100 INPUT BIAS CURRENT, IIB (pA) VCC = 10V V i = 5V
Figure 14a : Low Level Output Voltage versus Low Level Output Current
1 .0 0 .8 0 .6 0 .4 0 .2 T amb = 2 5 °C V ic = 0 .5 V V id = -1 0 0 m V 1 2 O U T P U T C U R R E N T , I OL (m A ) 3 VC C = 3 V
O U T P U T V O L T A G E , VOL(V )
V
CC
= 5V
10
1
25
50
75
100
125
0
TEMPERATURE, T amb ( °C)
Figure 13a : High Level Output Voltage versus High Level Output Current
5 OUTPUT VOLTAGE, VOH (V) 4 3 2 1 0 -10 VCC = 3V Tamb = 25 ° C V id = 100mV VCC= 5V
Figure 14b : Low Level Output Voltage versus Low Level Output Current
O U T P U T V O L T A G E , V OL (V ) 3 V C C = 10V
2
VC C = 1 6 V
1 Tamb = 2 5 °C V i = 0 .5 V V = -1 0 0 m V id 0 4 8 12 16 20
-8
-6
-4
-2
0
OUTPUT CURRENT, I OH (mA)
O U T P U T C U R R E N T , I OL (m A )
9/15
TS271C,I,M
Figure 15 : Open Loop Frequency Response and Phase Shift Figure 18 : Phase Margin versus Capacitive Load
P H A S E M A R G IN , φ m (D e g re e s )
50 Ta m b = 2 5 °C RL = 100kΩ AV = 1 VC C = 10V
50 P H A S E (D e g re e s ) 40 G A IN 30 G A IN (d B ) PHASE T a m b = 2 5 °C V C C+ = 1 0 V R L = 100kΩ C L = 100pF A VC L = 100 2 3 4 Phase Margin 0 45 90 135 Gain Bandwidth Product 10 10 5 10 6 10 180
40
20 10 0 -1 0 10
30
20
10
7
0
F R E Q U E N C Y , f (H z )
20
40
60
L
80 (p F )
100
C A P A C IT A N C E , C
Figure 16 : Gain Bandwidth Product versus Supply Voltage
G A IN B A N D W . P R O D ., G B P (M H z ) 0.9 0.8 0.7 Ta m b = 2 5 °C RL = 100k Ω CL = 1 0 0 p F AV = 1
Figure 19 : Slew Rate versus Supply Voltage
1.0 S L E W R A T E S , S R (V / µ s ) 0.8 0.6 0.4 0.2 0 Ta m b = 2 5 °C R L = 100k Ω CL = 1 0 0 p F 4 6 8 10 12 S U P P L Y V O L T A G E , VC C 14 (V ) 16 SR
SR
0.6 0.5 0.4 0 4 8 12 16 S U P P L Y V O L T A G E , V C C (V )
Figure 17 : Phase Margin versus Supply Voltage
P H A S E M A R G IN , φ m (D e g re e s )
50 40 30
20 10
Ta m b = 2 5 °C R L = 100kΩ CL = 1 0 0 p F AV = 1 4 8 12 16
0
S U P P L Y V O L T A G E , V C C (V )
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TS271C,I,M
ELECTRICAL CHARACTERISTICS for ISET = 130µA VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified)
TS271C/AC/BC Symbol Parameter Min. Input Offset Voltage VO = 1.4V, Vic = 0V Vio Tmin ≤ Tamb ≤ Tmax TS271C/I/M TS271AC/AI/AM TS271B/C/I/M TS271C/I/M TS271AC/AI/AM TS271B/C/I/M
1)
TS271I/AI/BI TS271M/AM/BM Min. Typ. Max. 10 5 2 12 6.5 3.5
Unit
Typ. 1.1 0.9 0.25
Max. 10 5 2 12 6.5 3
1.1 0.9 0.25
mV
DVio Iio
Input Offset Voltage Drift Input Offset Current note Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax
2 1 100 1 150 8.2 8.1 8.4 8.2 8 50 10 7 15 10 6
2 1 200 1 300 8.4
µV/°C pA
Iib
Input Bias Current - see note 1 Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax High Level Output Voltage Vid = 100mV, RL = 10kΩ Tmin ≤ Tamb ≤ Tmax Low Level Output Voltage Vid = -100mV Large Signal Voltage Gain ViC = 5V, RL = 10kΩ, Vo = 1V to 6V Tmin ≤ Tamb ≤ Tmax Gain Bandwidth Product Av = 40dB, RL = 10kΩ, CL = 100pF, fin = 100kHz Common Mode Rejection Ratio ViC = 1V to 7.4V, Vo = 1.4V Supply Voltage Rejection Ratio VCC+ = 5V to 10V, Vo = 1.4V Supply Current (per amplifier) Av = 1, no load, Vo = 5V Tmin ≤ Tamb ≤ Tmax Output Short Circuit Current Vo = 0V, Vid = 100mV Output Sink Current Vo = VCC, Vid = -100mV Slew Rate at Unity Gain RL = 10kΩ, CL = 100pF, Vi = 3 to 7V Phase Margin at Unity Gain Av = 40dB, RL = 10kΩ CL = 10pF CL = 100pF Overshoot Factor Av = 40dB, RL = 10kΩ CL = 10pF CL = 100pF Equivalent Input Noise Voltage f = 1kHz, Rs = 100Ω 60 60
pA
VOH VOL Avd GBP CMR SVR
V
50 15
mV
V/mV
2.3 80 70 800 1300 1400 60 60
2.3 80 70 800 1300 1500
MHz dB dB
ICC Io Isink SR φm
µA
60 45 4.5 65 30 30 50 30
60 45 4.5 65 30 30 50 30
mA mA V/µs Degrees
KOV
% nV ----------Hz
en
1.
Maximum values including unavoidable inaccuracies of the industrial test.
11/15
TS271C,I,M
TYPICAL CHARACTERISTICS for ISET = 130µA Figure 20 : Supply Current (each amplifier) versus Supply Voltage
1.0 SUPPLY CURRENT, ICC (mA) OUTPUT VOLTAGE, VOH (V) 0.8 0.6 0.4 0.2 0 Tamb = 25°C AV = 1 VO = VCC / 2 4 8 12 16
Figure 22b : High Level Output Voltage versus High Level Output Current
20 Tamb = 25 ° C 16 12 8 4 0 -50 V id = 100mV VCC = 16V
VCC = 10V
-40
-30
-20
-10
0
SUPPLY VOLTAGE, VCC (V)
OUTPUT CURRENT, I OH (mA)
Figure 21 : Input Bias Current versus Free Air Temperature
100 INPUT BIAS CURRENT, IIB (pA) VCC = 10V V i = 5V
Figure 23a : Low Level Output Voltage versus Low Level Output Current
1 .0 0 .8 0 .6 0 .4 0 .2 T amb = 2 5 °C V ic = 0 .5 V V id = -1 0 0 m V 1 2 O U T P U T C U R R E N T , I OL (m A ) 3 VC C = 3 V
O U T P U T V O L T A G E , VOL(V )
V
CC
= 5V
10
1
25
50
75
100
125
0
TEMPERATURE, T amb ( °C)
Figure 22a : High Level Output Voltage versus High Level Output Current
5 OUTPUT VOLTAGE, VOH (V) 4 3 2 1 0 -10 VCC = 3V Tamb = 25 ° C V id = 100mV VCC= 5V
Figure 23b : Low Level Output Voltage versus Low Level Output Current
O U T P U T V O L T A G E , V OL (V ) 3 V C C = 10V
2
VC C = 1 6 V
1 Tamb = 2 5 °C V i = 0 .5 V V = -1 0 0 m V id 0 4 8 12 16 20
-8
-6
-4
-2
0
OUTPUT CURRENT, I OH (mA)
O U T P U T C U R R E N T , I OL (m A )
12/15
TS271C,I,M
Figure 24 : Open Loop Frequency Response and Phase Shift Figure 27 : Phase Margin versus Capacitive Load
P H A S E M A R G IN , φ m (D e g re e s )
70 Ta m b = 2 5 °C RL = 10k Ω AV = 1 VC C = 10V
50 P H A S E (D e g re e s ) 40 G A IN 30 G A IN (d B ) PHASE T a m b = 2 5 °C V C C+ = 1 0 V R L = 10k Ω C L = 100pF A VC L = 100 2 3 4 Phase Margin 0 45 90 135 Gain Bandwidth Product 10 10 5 10 6 10 180
60
20 10 0 -1 0 10
50 40
10
7
30 0 20 40 60
L
F R E Q U E N C Y , f (H z )
80 (p F )
100
C A P A C IT A N C E , C
Figure 25 : Gain Bandwidth Product versus Supply Voltage
G A IN B A N D W . P R O D ., G B P (M H z ) 5
Figure 28 : Slew Rate versus Supply Voltage
5 S L E W R A T E S , S R (V / µ s )
4 3
Ta m b = 2 5 °C RL = 10k Ω CL = 1 0 0 p F AV = 1
SR 4 3 2 1 0 Ta m b = 2 5 °C R L = 10k Ω CL = 1 0 0 p F 4 6 8 10 12 S U P P L Y V O L T A G E , VC C 14 (V ) 16 SR
2 1
0
4
8
12
16
S U P P L Y V O L T A G E , V C C (V )
Figure 26 : Phase Margin versus Supply Voltage
P H A S E M A R G IN , φ m (D e g re e s )
50 40 30
20 10
Ta m b = 2 5 °C R L = 10k Ω CL = 1 0 0 p F AV = 1 4 8 12 16
0
S U P P L Y V O L T A G E , V C C (V )
13/15
TS271C,I,M
PACKAGE MECHANICAL DATA 8 PINS - PLASTIC DIP
Millimeters Dimensions Min. A a1 B b b1 D E e e3 e4 F i L Z 0.51 1.15 0.356 0.204 7.95 2.54 7.62 7.62 6.6 5.08 3.81 1.52 Typ. 3.32 1.65 0.55 0.304 10.92 9.75 0.020 0.045 0.014 0.008 0.313 Max. Min.
Inches Typ. 0.131 0.065 0.022 0.012 0.430 0.384 0.100 0.300 0.300 0260 0.200 0.150 0.060 Max.
3.18
0.125
14/15
TS271C,I,M
PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICROPACKAGE (SO)
L
C a3
c1
a2
A
s e3 E
D M
8
5
F
1
4
Millimeters Dimensions Min. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 0.1 0.65 0.35 0.19 0.25 4.8 5.8 1.27 3.81 3.8 0.4 4.0 1.27 0.6 8° (max.) 0.150 0.016 Typ. Max. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45° (typ.) 5.0 6.2 0.189 0.228 Min. 0.004 0.026 0.014 0.007 0.010
a1
b
Inches Typ. Max. 0.069 0.010 0.065 0.033 0.019 0.010 0.020 0.197 0.244 0.050 0.150 0.157 0.050 0.024
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States © http://www.st.com
b1
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