TS271CDT

TS271 CMOS Programmable Low Power Single Operational Amplifier ■ ■ ■ Offset null capability (by external compensation) Dynamic characteristics adjustable ISET ■ ■ Consumption current and dynamic parameters are stable regarding the voltage power supply variations Output voltage can swing to ground Very large ISET range ■ ■ Stable and low offset voltage Three input offset voltage selections N DIP8 (Plastic Package) Description The TS271 is a low cost, low power single operational amplifier designed to operate with single or dual supplies. This operational amplifier uses the ST silicon gate CMOS process giving it an excellent consumption-speed ratio. This amplifier is ideally suited for low consumption applications. D SO-8 (Plastic Micropackage) Pin Connections (top view) The power supply is externally programmable with a resistor connected between pins 8 and 4. It allows to choose the best consumption-speed ratio and supply current can be minimized according to the required speed. This device is specified for the following ISET current values: 1.5µA, 25µA, 130µA. 1 8 2 - 7 3 + 6 4 5 1 - Offset Null 1 2 - Inverting Input 1 3 - Non-inverting Input 1 4 - V CC 5 - Offset Null 2 6 - Output 7 - V CC+ 8 - I Set This CMOS amplifier offers very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature see Figure 8, Figure 19, Figure 30. Order Codes Part Number TS271CN/ACN TS271CD/CDT/ACD/ACDT TS271IN/AIN/ TS271ID/IDT/AID/AIDT/BID/BIDT TS271BMD March 2005 Temperature Range 0°C, +70°C -40°C, +125°C -55°C, +125°C Revision 2 Package Packaging DIP SO DIP SO SO Tube Tube and Tape & Reel Tube Tube and Tape & Reel Tube 1/17 TS271 1 Block Diagram Figure 1. Application block diagram 2/17 Block Diagram Absolute Maximum Ratings TS271 2 Absolute Maximum Ratings Table 1. Key parameters and their absolute maximum ratings Symbol VCC+ Vid Parameter Supply Voltage TS271C/AC/BC 1 TS271I/AI/BI TS271M/AM/BM 18 2 Unit V ±18 V -0.3 to 18 V Output Current for VCC+ ≥ 15V ±30 mA Input Current ±5 mA Differential Input Voltage Vi Input Voltage Io Iin 3 Toper Operating Free-Air Temperature Range Tstg Storage Temperature Range 0 to +70 -40 to +125 -55 to +125 -65 to +150 °C °C 1) All values, except differential voltage are with respect to network ground terminal. 2) Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. 3) The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage. Table 2. Operating conditions Symbol VCC + Vicm Parameter Supply Voltage Common Mode Input Voltage Range Value Unit 3 to 16 V + 0 to VCC - 1.5 V 3/17 TS271 Figure 2. Schematic Diagram 4/17 Absolute Maximum Ratings Absolute Maximum Ratings TS271 Figure 3. Offset voltage null circuit Figure 5. Resistor biasing VCC+ VCC+ 5 + 1 8 - 25kΩ - - VO VCC VO + R set + R set R set VCC- VCC- R set CONNECTED TO VCC- (R set VALUE : SEE Fig. 1) R set CONNECTED TO GROUND OFFSET COMPENSATION GUARANTEED FOR TS271BCX (ISET > 25µA), TS271ACX (ISET > 90µA) Figure 4. Offset voltage null circuit Figure 6. Rset connected to Vcc- - VCC = +16V VCC = +5V VCC = +10V Rset 5 + VCC = +3V 1 8 10MΩ 25kΩ VCC- 1MΩ R set 100kΩ OFFSET COMPENSATION GUARANTEED FOR TS271BCX (ISET > 25µA), TS271ACX (ISET > 90µA) 10kΩ 0.1µA 1 µA 10µA 100µA Iset 5/17 TS271 Electrical Characteristics 3 Electrical Characteristics Table 3. for ISET = 1.5µA - VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified) TS271C/AC/BC Symbol Parameter Min. Input Offset Voltage VO = 1.4V, Vic = 0V Vio DVio Iio Iib Tmin ≤ Tamb ≤ Tmax Input Offset Voltage Drift Input Offset Current note Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax 1.1 0.9 0.25 10 5 2 12 6.5 3 Min. Typ. 1.1 0.9 0.25 2 VOL Low Level Output Voltage Vid = -100mV 10 5 2 12 6.5 3.5 mV µV/°C 1 100 1 1 150 8.8 8.7 9 30 20 8.8 8.6 100 9 30 20 0.1 100 80 60 80 SVR Supply Voltage Rejection Ratio VCC+ = 5V to 10V, Vo = 1.4V 60 80 60 80 15 17 10 mV V/mV MHz 0.1 60 10 V 50 Common Mode Rejection Ratio ViC = 1V to 7.4V, Vo = 1.4V Supply Current (per amplifier) Av = 1, no load, Vo = 5V Tmin ≤ Tamb ≤ Tmax pA 300 50 Large Signal Voltage Gain ViC = 5V, RL = 1MΩ, Vo = 1V to 6V Tmin ≤ Tamb ≤ Tmax Gain Bandwidth Product Av = 40dB, RL = 1MΩ, CL = 100pF, fin = 100kHz pA 200 CMR ICC Max. 2 1 Input Bias Current - see note 1 Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax High Level Output Voltage Vid = 100mV, RL = 1MΩ Tmin ≤ Tamb ≤ Tmax GBP Max. Unit 1 VOH Avd dB dB 15 18 µA Io Output Short Circuit Current Vo = 0V, Vid = 100mV 60 60 Isink Output Sink Current Vo = VCC, Vid = -100mV 45 45 SR Slew Rate at Unity Gain RL = 1MΩ, CL = 100pF, Vi = 3 to 7V 0.04 0.04 CL = 10pF CL = 100pF 35 10 35 10 Degrees CL = 10pF CL = 100pF 40 70 40 70 % 30 30 φm Phase Margin at Unity Gain Av = 40dB, RL = 1MΩ KOV Overshoot Factor Av = 40dB, RL = 1MΩ en 1) TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM Typ. TS271I/AI/BI TS271M/AM/BM Equivalent Input Noise Voltage f = 1kHz, Rs = 100Ω Maximum values including unavoidable inaccuracies of the industrial test. 6/17 mA mA V/µs nV -----------Hz Electrical Characteristics TS271 Figure 10. High level output voltage versus high level output current Typical characteristics for ISET = 1.5µA Figure 7. Supply current versus supply voltage OUTPUT VOLTAGE, VOH (V) 20 SUPPLY CURRENT, ICC (µ A) 20 Tamb = 25°C AV = 1 VO = VCC / 2 15 10 5 Tamb = 25 ° C 16 VCC = 16V 12 8 4 8 12 VCC = 10V 4 0 -50 0 V id = 100mV -40 -30 -20 -10 0 OUTPUT CURRENT, I OH (mA) 16 SUPPLY VOLTAGE, VCC (V) INPUT BIAS CURRENT, IIB (pA) 100 VCC = 10V V i = 5V 10 1 Figure 11. Low level output voltage versus low level output current O U T P U T V O L T A G E , VOL(V ) Figure 8. Input bias current versus free air temperature 1 .0 0 .8 0 .6 50 75 100 V CC = 5V 0 .4 T amb = 2 5 °C V ic = 0 .5 V V id = -1 0 0 m V 0 .2 0 25 VC C = 3 V 125 1 2 O U T P U T C U R R E N T , I OL (m A ) 3 TEMPERATURE, T amb ( °C) Figure 9. High level output voltage versus high level output current 4 O U T P U T V O L T A G E , V OL (V ) OUTPUT VOLTAGE, VOH (V) 5 Tamb = 25 ° C V id = 100mV 3 VCC= 5V 2 VCC = 3V 1 0 -10 -8 -6 -4 Figure 12. Low level output voltage versus low level output current -2 OUTPUT CURRENT, I OH (mA) 0 3 V C C = 10V VC C = 1 6 V 2 1 Tamb = 2 5 °C V i = 0 .5 V V = -1 0 0 m V id 0 4 8 12 16 20 O U T P U T C U R R E N T , I OL (m A ) 7/17 TS271 Electrical Characteristics 50 G A IN 0 G A IN (d B ) 30 45 PHASE 20 T a m b = 2 5 °C V C C+ = 1 0 V R L = 1M Ω C L = 100pF A VC L = 100 10 0 -1 0 10 2 10 P H A S E (D e g re e s ) 40 3 Phase Margin 4 135 180 Gain Bandwidth Product 10 90 10 5 10 6 Figure 16. Phase margin versus capacitive load P H A S E M A R G IN , φ m (D e g re e s ) Figure 13. Open loop frequency response and phase shift 40 Ta m b = 2 5 °C RL = 1M Ω AV = 1 VC C = 10V 30 20 10 0 F R E Q U E N C Y , f (H z ) 20 40 60 C A P A C IT A N C E , C 0.07 Ta m b = 2 5 °C RL = 1MΩ CL = 1 0 0 p F AV = 1 100 80 60 40 4 0 8 12 16 10 8 6 4 2 0 Ta m b = 2 5 °C R L = 1MΩ CL = 1 0 0 p F AV = 1 4 8 12 S U P P L Y V O L T A G E , V C C (V ) 16 SR 0.05 0.04 0.03 0.02 0.01 4 Figure 15. Phase margin versus supply voltage P H A S E M A R G IN , φ m (D e g re e s ) 0.06 , 120 S U P P L Y V O L T A G E , V C C (V ) 8/17 L 100 Figure 17. Slew rate versus supply voltage S L E W R A T E S S R (V / µs ) G A IN B A N D W . P R O D ., G B P (M H z ) Figure 14. Gain bandwidth product versus supply voltage 80 (p F ) SR Ta m b = 2 5 °C R L = 1MΩ CL = 1 0 0 p F 6 8 10 12 S U P P L Y V O L T A G E , VC C 14 (V ) 16 Electrical Characteristics TS271 4 Electrical Characteristics Table 4. for ISET = 25µA - VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified) TS271C/AC/BC Symbol Parameter Min. Input Offset Voltage VO = 1.4V, Vic = 0V Vio DVio Iio Iib Tmin ≤ Tamb ≤ Tmax Input Offset Voltage Drift Input Offset Current note Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax 1.1 0.9 0.25 10 5 2 12 6.5 3 Min. Typ. 1.1 0.9 0.25 2 VOL Low Level Output Voltage Vid = -100mV 10 5 2 12 6.5 3.5 mV µV/°C 1 100 1 1 150 8.7 8.6 8.9 30 20 8.7 8.5 50 8.9 30 10 0.7 50 80 60 80 SVR Supply Voltage Rejection Ratio VCC+ = 5V to 10V, Vo = 1.4V 60 80 60 80 200 250 150 mV V/mV MHz 0.7 60 150 V 50 Common Mode Rejection Ratio ViC = 1V to 7.4V, Vo = 1.4V Supply Current (per amplifier) Av = 1, no load, Vo = 5V Tmin ≤ Tamb ≤ Tmax pA 300 50 Large Signal Voltage Gain ViC = 5V, RL = 100kΩ, Vo = 1V to 6V Tmin ≤ Tamb ≤ Tmax Gain Bandwidth Product Av = 40dB, RL = 100kΩ, CL = 100pF, fin = 100kHz pA 200 CMR ICC Max. 2 1 Input Bias Current - see note 1 Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax High Level Output Voltage Vid = 100mV, RL = 100kΩ Tmin ≤ Tamb ≤ Tmax GBP Max. Unit 1 VOH Avd dB dB 200 300 µA Io Output Short Circuit Current Vo = 0V, Vid = 100mV 60 60 Isink Output Sink Current Vo = VCC, Vid = -100mV 45 45 SR Slew Rate at Unity Gain RL = 100kΩ, CL = 100pF, Vi = 3 to 7V 0.6 0.6 CL = 10pF CL = 100pF 50 30 50 30 Degrees CL = 10pF CL = 100pF 30 50 30 50 % 38 38 φm Phase Margin at Unity Gain Av = 40dB, RL = 100kΩ KOV Overshoot Factor Av = 40dB, RL = 100kΩ en 1) TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM TS271B/C/I/M TS271AC/AI/AM TS271BC/BI/BM Typ. TS271I/AI/BI TS271M/AM/BM Equivalent Input Noise Voltage f = 1kHz, Rs = 100Ω mA mA V/µs nV -----------Hz Maximum values including unavoidable inaccuracies of the industrial test. 9/17 TS271 Electrical Characteristics Figure 21. High level output voltage versus high level output current Typical characteristics for ISET = 25µA Figure 18. Supply current versus supply voltage OUTPUT VOLTAGE, VOH (V) 20 SUPPLY CURRENT, ICC (µ A) 200 150 100 Tamb = 25°C AV = 1 VO = VCC / 2 50 0 4 8 12 Tamb = 25 ° C 16 V id = 100mV VCC = 16V 12 8 VCC = 10V 4 0 -50 -40 -30 -20 -10 0 OUTPUT CURRENT, I OH (mA) 16 SUPPLY VOLTAGE, VCC (V) Figure 19. Input bias current versus free air temperature O U T P U T V O L T A G E , VOL(V ) INPUT BIAS CURRENT, IIB (pA) 100 VCC = 10V V i = 5V 10 1 Figure 22. Low level output voltage versus low level output current 1 .0 0 .8 0 .6 50 75 100 V CC = 5V 0 .4 T amb = 2 5 °C V ic = 0 .5 V V id = -1 0 0 m V 0 .2 0 25 VC C = 3 V 125 1 2 O U T P U T C U R R E N T , I OL (m A ) 3 TEMPERATURE, T amb ( °C) Figure 20. High level output voltage versus high level output current 4 O U T P U T V O L T A G E , V OL (V ) OUTPUT VOLTAGE, VOH (V) 5 Tamb = 25 ° C V id = 100mV 3 VCC= 5V 2 VCC = 3V 1 0 -10 -8 -6 -4 -2 OUTPUT CURRENT, I OH (mA) 10/17 Figure 23. Low level output voltage versus low level output current 0 3 V C C = 10V VC C = 1 6 V 2 1 Tamb = 2 5 °C V i = 0 .5 V V = -1 0 0 m V id 0 4 8 12 16 O U T P U T C U R R E N T , I OL (m A ) 20 Electrical Characteristics TS271 50 40 G A IN (d B ) 45 PHASE 20 Phase Margin T a m b = 2 5 °C V C C+ = 1 0 V R L = 100kΩ C L = 100pF A VC L = 100 10 0 2 10 3 90 135 180 Gain Bandwidth Product -1 0 10 P H A S E (D e g re e s ) 0 G A IN 30 10 4 10 5 10 6 10 Figure 27. Phase margin versus capacitive load P H A S E M A R G IN , φ m (D e g re e s ) Figure 24. Open loop frequency response and phase shift 50 40 30 20 7 0 F R E Q U E N C Y , f (H z ) 20 40 60 100 80 C A P A C IT A N C E , C Figure 25. Gain bandwidth product versus supply voltage L (p F ) Figure 28. Slew rate versus supply voltage 1.0 0.9 S L E W R A T E S , S R (V / µs ) G A IN B A N D W . P R O D ., G B P (M H z ) Ta m b = 2 5 °C RL = 100kΩ AV = 1 VC C = 10V Ta m b = 2 5 °C RL = 100kΩ CL = 1 0 0 p F AV = 1 0.8 0.7 0.6 0.5 4 0 8 12 16 SR 0.6 0.4 Ta m b = 2 5 °C R L = 100kΩ CL = 1 0 0 p F 0.2 0 0.4 SR 0.8 4 6 8 10 12 S U P P L Y V O L T A G E , VC C 14 (V ) 16 S U P P L Y V O L T A G E , V C C (V ) P H A S E M A R G IN , φ m (D e g re e s ) Figure 26. Phase margin versus supply voltage 50 40 30 20 10 0 Ta m b = 2 5 °C R L = 100kΩ CL = 1 0 0 p F AV = 1 4 8 12 16 S U P P L Y V O L T A G E , V C C (V ) 11/17 TS271 Electrical Characteristics 5 Electrical Characteristics Table 5. for ISET = 130µA - VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified) TS271C/AC/BC Symbol Parameter Min. Input Offset Voltage VO = 1.4V, Vic = 0V Vio DVio Iio Iib Tmin ≤ Tamb ≤ Tmax Input Offset Voltage Drift Input Offset Current note Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax 1.1 0.9 0.25 10 5 2 12 6.5 3 Min. Typ. 1.1 0.9 0.25 2 VOL Low Level Output Voltage Vid = -100mV 10 5 2 12 6.5 3.5 mV µV/°C 1 100 1 1 150 8.2 8.1 8.4 10 7 8.2 8 15 8.4 10 6 2.3 15 80 60 80 SVR Supply Voltage Rejection Ratio VCC+ = 5V to 10V, Vo = 1.4V 60 70 60 70 1300 1400 800 mV V/mV MHz 2.3 60 800 V 50 Common Mode Rejection Ratio ViC = 1V to 7.4V, Vo = 1.4V Supply Current (per amplifier) Av = 1, no load, Vo = 5V Tmin ≤ Tamb ≤ Tmax pA 300 50 Large Signal Voltage Gain ViC = 5V, RL = 10kΩ, Vo = 1V to 6V Tmin ≤ Tamb ≤ Tmax Gain Bandwidth Product Av = 40dB, RL = 10kΩ, CL = 100pF, fin = 100kHz pA 200 CMR ICC Max. 2 1 Input Bias Current - see note 1 Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax High Level Output Voltage Vid = 100mV, RL = 10kΩ Tmin ≤ Tamb ≤ Tmax GBP Max. Unit 1 VOH Avd dB dB 1300 1500 µA Io Output Short Circuit Current Vo = 0V, Vid = 100mV 60 60 Isink Output Sink Current Vo = VCC, Vid = -100mV 45 45 SR Slew Rate at Unity Gain RL = 10kΩ, CL = 100pF, Vi = 3 to 7V 4.5 4.5 CL = 10pF CL = 100pF 65 30 65 30 Degrees CL = 10pF CL = 100pF 30 50 30 50 % 30 30 φm Phase Margin at Unity Gain Av = 40dB, RL = 10kΩ KOV Overshoot Factor Av = 40dB, RL = 10kΩ en 1) TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM TS271B/C/I/M TS271AC/AI/AM TS271BC/BI/BM Typ. TS271I/AI/BI TS271M/AM/BM Equivalent Input Noise Voltage f = 1kHz, Rs = 100Ω Maximum values including unavoidable inaccuracies of the industrial test. 12/17 mA mA V/µs nV -----------Hz Electrical Characteristics TS271 Figure 32. High level output voltage versus high level output current Typical characteristics for ISET = 130µA Figure 29. Supply current (each amplifier) versus supply voltage OUTPUT VOLTAGE, VOH (V) 20 SUPPLY CURRENT, ICC (mA) 1.0 0.8 0.6 0.4 Tamb = 25°C AV = 1 VO = VCC / 2 0.2 0 8 4 12 Tamb = 25 ° C 16 VCC = 16V 12 8 VCC = 10V 4 0 -50 -40 -30 -20 -10 0 OUTPUT CURRENT, I OH (mA) 16 SUPPLY VOLTAGE, VCC (V) V id = 100mV Figure 33. Low level output voltage versus low level output current O U T P U T V O L T A G E , VOL(V ) Figure 30. Input bias current versus free air temperature INPUT BIAS CURRENT, IIB (pA) 100 VCC = 10V V i = 5V 10 1 .0 0 .8 0 .6 25 50 75 100 V CC = 5V 0 .4 T amb = 2 5 °C V ic = 0 .5 V V id = -1 0 0 m V 0 .2 0 1 VC C = 3 V 1 2 O U T P U T C U R R E N T , I OL (m A ) 3 125 TEMPERATURE, T amb ( °C) OUTPUT VOLTAGE, VOH (V) 5 = 25 ° C 4 Tamb V id = 100mV 3 VCC= 5V 2 VCC = 3V 1 0 -10 Figure 34. Low level output voltage versus low level output current O U T P U T V O L T A G E , V OL (V ) Figure 31. High level output voltage versus high level output current 3 V C C = 10V 1 Tamb = 2 5 °C V i = 0 .5 V V = -1 0 0 m V id 0 -8 -6 -4 -2 0 VC C = 1 6 V 2 4 8 12 16 20 O U T P U T C U R R E N T , I OL (m A ) OUTPUT CURRENT, I OH (mA) 13/17 TS271 Electrical Characteristics 50 40 G A IN (d B ) 45 PHASE 20 Phase Margin T a m b = 2 5 °C V C C+ = 1 0 V R L = 10kΩ C L = 100pF A VC L = 100 10 0 2 10 3 90 135 180 Gain Bandwidth Product -1 0 10 P H A S E (D e g re e s ) 0 G A IN 30 10 4 10 5 10 6 10 7 Figure 38. Phase margin versus capacitive load P H A S E M A R G IN , φ m (D e g re e s ) Figure 35. Open loop frequency response and phase shift 70 Ta m b = 2 5 °C RL = 10kΩ AV = 1 VC C = 10V 60 50 40 30 0 F R E Q U E N C Y , f (H z ) 20 40 60 C A P A C IT A N C E , C 4 3 Ta m b = 2 5 °C RL = 10kΩ CL = 1 0 0 p F AV = 1 2 1 0 4 8 12 16 50 40 30 20 10 0 SR 4 Ta m b = 2 5 °C R L = 10kΩ CL = 1 0 0 p F AV = 1 4 8 12 S U P P L Y V O L T A G E , V C C (V ) 16 SR 3 2 Ta m b = 2 5 °C R L = 10kΩ CL = 1 0 0 p F 1 0 Figure 37. Phase margin versus supply voltage P H A S E M A R G IN , φ m (D e g re e s ) (p F ) 5 5 S U P P L Y V O L T A G E , V C C (V ) 14/17 L 100 Figure 39. Slew rate versus supply voltage S L E W R A T E S , S R (V / µs ) G A IN B A N D W . P R O D ., G B P (M H z ) Figure 36. Gain bandwidth product versus supply voltage 80 4 6 8 10 12 S U P P L Y V O L T A G E , VC C 14 (V ) 16 Package Mechanical Data TS271 6 Package Mechanical Data Plastic DIP-8 MECHANICAL DATA mm. inch DIM. MIN. A TYP MAX. MIN. 3.3 TYP. MAX. 0.130 a1 0.7 B 1.39 1.65 0.055 0.065 B1 0.91 1.04 0.036 0.041 0.5 0.015 b b1 0.028 0.5 0.38 D 0.020 0.020 9.8 0.386 E 8.8 0.346 e 2.54 0.100 e3 7.62 0.300 e4 7.62 0.300 F 7.1 0.280 I 4.8 0.189 L Z 3.3 0.44 0.130 1.6 0.017 0.063 P001F 15/17 TS271 Package Mechanical Data Package Mechanical Data SO-8 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. 0.053 0.069 MAX. A 1.35 1.75 A1 0.10 0.25 0.04 0.010 A2 1.10 1.65 0.043 0.065 B 0.33 0.51 0.013 0.020 C 0.19 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 e 1.27 0.050 H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 k ddd 8˚ (max.) 0.1 0.04 0016023/C 16/17 Revision History TS271 7 Revision History Date Revision Description of Changes 01 Nov. 2001 1 First Release 01 March 2005 2 • • Application block diagram updated on Figure 2 on page 4 Schematic Diagram updated on Figure 4 on page 5 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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