TS271IAI

TS271C,I,M CMOS PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIER s OFFSET NULL CAPABILITY (by external compensation) s DYNAMIC CHARACTERISTICS ADJUSTABLE ISET s CONSUMPTION CURRENT AND DYNAMIC PARAMETERS ARE STABLE REGARDING THE VOLTAGE POWER SUPPLY VARIATIONS OUTPUT VOLTAGE CAN SWING TO GROUND VERY LARGE ISET RANGE STABLE AND LOW OFFSET VOLTAGE THREE INPUT OFFSET VOLTAGE SELECTIONS s s s s N DIP8 (Plastic Package) DESCRIPTION The TS271 is a low cost, low power single opertional amplifier designed to operate with single or dual supplies. This operational amplifier uses the ST silicon gate CMOS process giving it an excellent consumption-speed ratio. This amplifier is ideally suited for low consumption applications. The power supply is externally programmable with a resistor connected between pins 8 and 4. It allows to choose the best consumption-speed ratio and supply current can be minimized according to the required speed. This device is specified for the following ISET current values : 1.5µA, 25µA, 130µA. This CMOS amplifier offers very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature (see figure 3). ORDER CODE Package Part Number Temperature Range N TS271C/AC/BC 0°C, +70°C TS271I/AI/BI -40°C, +125°C TS271M/AM/BM -55°C, +125°C Example : TS271ACN • • • D • • • 1 - Offset Null 1 2 - Inverting Input 1 3 - Non-inverting Input 1 4 - V CC 5 - Offset Null 2 6 - Output 7-V + CC D SO8 (Plastic Micropackage) PIN CONNECTIONS (top view) 1 2 3 4 + 8 7 6 5 N = Dual in Line Package (DIP) D = Small Outline Package (SO) - also available in Tape & Reel (DT) 8 - I Set November 2001 1/15 TS271C,I,M BLOCK DIAGRAM VCC Current source xI Input differential Second stage Output stage Output VCC E E ABSOLUTE MAXIMUM RATINGS Symbol VCC Vid Vi Io Iin Toper Tstg + Parameter Supply Voltage 3) 1) 2) TS271C/AC/BC TS271I/AI/BI 18 ±18 -0.3 to 18 ±30 ±5 TS271M/AM/BM Unit V V V mA mA Differential Input Voltage Input Voltage Output Current for VCC+ ≥ 15V Input Current Operating Free-Air Temperature Range Storage Temperature Range 0 to +70 -40 to +125 -65 to +150 -55 to +125 °C °C 1. All values, except differential voltage are with respect to network ground terminal. 2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. 3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage. OPERATING CONDITIONS Symbol VCC+ Vicm Supply Voltage Common Mode Input Voltage Range Parameter Value 3 to 16 0 to VCC+ - 1.5 Unit V V 2/15 SCHEMATIC DIAGRAM VCC T24 T 25 T 26 T6 T8 T27 T5 T 10 T 15 R2 T 28 T1 Input T 18 T2 Input R1 C1 T11 T 12 T17 T7 T 23 T3 Output T19 T4 T16 T9 T 13 T 14 T20 T 22 T21 T29 VCC TS271C,I,M 3/15 TS271C,I,M OFFSET VOLTAGE NULL CIRCUIT RESISTOR BIASING VCC+ VCC+ 5 + 1 8 25kΩ VCC VO VO + + R set VCC- R set R set VCC- R set CONNECTED TO GROUND R set CONNECTED TO VCC- (R set VALUE : SEE Fig. 1) OFFSET COMPENSATION GUARANTEED FOR TS271BCX (ISET > 25µA), TS271ACX (ISET > 90µA) Figure 1 : RSET Connected to VCC- VCC = +3V VCC = +5V Rset VCC = +16V VCC = +10V 10MΩ 1MΩ 100kΩ 10kΩ 0.1µA 1µA 10µA 100µA Iset 4/15 TS271C,I,M ELECTRICAL CHARACTERISTICS for ISET = 1.5µA VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified) TS271C/AC/BC Symbol Parameter Min. Input Offset Voltage VO = 1.4V, Vic = 0V Vio Tmin ≤ Tamb ≤ Tmax TS271C/I/M TS271AC/AI/AM TS271B/C/I/M TS271C/I/M TS271AC/AI/AM TS271B/C/I/M 1) TS271I/AI/BI TS271M/AM/BM Min. Typ. Max. 10 5 2 12 6.5 3.5 Unit Typ. 1.1 0.9 0.25 Max. 10 5 2 12 6.5 3 1.1 0.9 0.25 mV DVio Iio Input Offset Voltage Drift Input Offset Current note Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax 2 1 100 1 150 8.8 8.7 9 8.8 8.6 50 30 20 100 30 20 2 1 200 1 300 9 µV/°C pA Iib Input Bias Current - see note 1 Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax High Level Output Voltage Vid = 100mV, RL = 1MΩ Tmin ≤ Tamb ≤ Tmax Low Level Output Voltage Vid = -100mV Large Signal Voltage Gain ViC = 5V, RL = 1MΩ, Vo = 1V to 6V Tmin ≤ Tamb ≤ Tmax Gain Bandwidth Product Av = 40dB, RL = 1MΩ, CL = 100pF, fin = 100kHz Common Mode Rejection Ratio ViC = 1V to 7.4V, Vo = 1.4V Supply Voltage Rejection Ratio VCC+ = 5V to 10V, Vo = 1.4V Supply Current (per amplifier) Av = 1, no load, Vo = 5V Tmin ≤ Tamb ≤ Tmax Output Short Circuit Current Vo = 0V, Vid = 100mV Output Sink Current Vo = VCC, Vid = -100mV Slew Rate at Unity Gain RL = 1MΩ, CL = 100pF, Vi = 3 to 7V Phase Margin at Unity Gain Av = 40dB, RL = 1MΩ CL = 10pF CL = 100pF Overshoot Factor Av = 40dB, RL = 1MΩ CL = 10pF CL = 100pF Equivalent Input Noise Voltage f = 1kHz, Rs = 100Ω 60 60 pA VOH VOL Avd GBP CMR SVR V 50 100 mV V/mV 0.1 80 80 10 15 17 60 60 0.1 80 80 10 15 18 MHz dB dB ICC Io Isink SR φm µA 60 45 0.04 35 10 40 70 30 60 45 0.04 35 10 40 70 30 mA mA V/µs Degrees KOV % nV ----------Hz en 1. Maximum values including unavoidable inaccuracies of the industrial test. 5/15 TS271C,I,M TYPICAL CHARACTERISTICS for ISET = 1.5µA Figure 2 : Supply Current versus Supply Voltage Figure 4b : High Level Output Voltage versus High Level Output Current 20 OUTPUT VOLTAGE, VOH (V) 20 SUPPLY CURRENT, ICC (µ A) 15 Tamb = 25°C AV = 1 VO = VCC / 2 Tamb = 25 ° C 16 12 8 4 0 -50 V id = 100mV VCC = 16V 10 VCC = 10V 5 0 4 8 12 16 -40 -30 -20 -10 0 SUPPLY VOLTAGE, V C (V) C OUTPUT CURRENT, I OH (mA) Figure 3 : Input Bias Current versus Free Air Temperature 100 INPUT BIAS CURRENT, IIB (pA) VCC = 10V V i = 5V Figure 5a : Low Level Output Voltage versus Low Level Output Current 1 .0 0 .8 0 .6 0 .4 0 .2 T amb = 2 5 °C V ic = 0 .5 V V id = -1 0 0 m V 1 2 O U T P U T C U R R E N T , I OL (m A ) 3 VC C = 3 V O U T P U T V O L T A G E , VOL(V ) V CC = 5V 10 1 25 50 75 100 125 0 TEMPERATURE, T amb ( °C) Figure 4 : High Level Output Voltage versus High Level Output Current 5 OUTPUT VOLTAGE, VOH (V) 4 3 2 1 0 -10 VCC = 3V Tamb = 25 ° C V id = 100mV VCC= 5V Figure 5b : Low Level Output Voltage versus Low Level Output Current O U T P U T V O L T A G E , V OL (V ) 3 V C C = 10V 2 VC C = 1 6 V 1 Tamb = 2 5 °C V i = 0 .5 V V = -1 0 0 m V id 0 4 8 12 16 20 -8 -6 -4 -2 0 OUTPUT CURRENT, I OH (mA) O U T P U T C U R R E N T , I OL (m A ) 6/15 TS271C,I,M Figure 6 : Open Loop Frequency Response and Phase Shift Figure 9 : Phase Margin versus Capacitive Load P H A S E M A R G IN , φ m (D e g re e s ) 40 Ta m b = 2 5 °C RL = 1M Ω AV = 1 VC C = 10V 50 P H A S E (D e g re e s ) 40 30 G A IN (d B ) PHASE 20 10 0 -1 0 10 2 10 3 T a m b = 2 5 °C V C C+ = 1 0 V R L = 1M Ω C L = 100pF A VC L = 100 Phase Margin G A IN 0 45 90 135 180 30 20 Gain Bandwidth Product 10 4 10 5 10 6 10 0 F R E Q U E N C Y , f (H z ) 20 40 60 L 80 (p F ) 100 C A P A C IT A N C E , C Figure 7 : Gain Bandwidth Product versus Supply Voltage G A IN B A N D W . P R O D ., G B P (M H z ) 120 Ta m b = 2 5 °C RL = 1M Ω CL = 1 0 0 p F AV = 1 Figure 10 : Slew Rate versus Supply Voltage 0.07 S L E W R A T E S S R (V / µs ) 0.06 0.05 0.04 0.03 0.02 0.01 4 , SR 100 80 SR Ta m b = 2 5 °C R L = 1M Ω CL = 1 0 0 p F 6 8 10 12 S U P P L Y V O L T A G E , VC C 14 (V ) 16 60 40 0 4 8 12 16 S U P P L Y V O L T A G E , V C C (V ) Figure 8 : Phase Margin versus Supply Voltage P H A S E M A R G IN , φ m (D e g re e s ) 10 8 6 4 2 Ta m b = 2 5 °C R L = 1M Ω CL = 1 0 0 p F AV = 1 4 8 12 16 0 S U P P L Y V O L T A G E , V C C (V ) 7/15 TS271C,I,M ELECTRICAL CHARACTERISTICS for ISET = 25µA VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified) TS271C/AC/BC Symbol Parameter Min. Input Offset Voltage VO = 1.4V, Vic = 0V Vio Tmin ≤ Tamb ≤ Tmax TS271C/I/M TS271AC/AI/AM TS271C/I/M TS271B/C/I/M TS271AC/AI/AM TS271B/C/I/M 1) TS271I/AI/BI TS271M/AM/BM Min. Typ. Max. 10 5 2 12 6.5 3.5 Unit Typ. 1.1 0.9 0.25 Max. 10 5 2 12 6.5 3 1.1 0.9 0.25 mV DVio Iio Input Offset Voltage Drift Input Offset Current note Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax 2 1 100 1 150 8.7 8.6 8.9 8.7 8.5 50 30 20 50 30 10 2 1 200 1 300 8.9 µV/°C pA Iib Input Bias Current - see note 1 Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax High Level Output Voltage Vid = 100mV, RL = 100kΩ Tmin ≤ Tamb ≤ Tmax Low Level Output Voltage Vid = -100mV Large Signal Voltage Gain ViC = 5V, RL = 100kΩ, Vo = 1V to 6V Tmin ≤ Tamb ≤ Tmax Gain Bandwidth Product Av = 40dB, RL = 100kΩ, CL = 100pF, fin = 100kHz Common Mode Rejection Ratio ViC = 1V to 7.4V, Vo = 1.4V Supply Voltage Rejection Ratio VCC+ = 5V to 10V, Vo = 1.4V Supply Current (per amplifier) Av = 1, no load, Vo = 5V Tmin ≤ Tamb ≤ Tmax Output Short Circuit Current Vo = 0V, Vid = 100mV Output Sink Current Vo = VCC, Vid = -100mV Slew Rate at Unity Gain RL = 100kΩ, CL = 100pF, Vi = 3 to 7V Phase Margin at Unity Gain Av = 40dB, RL = 100kΩ CL = 10pF CL = 100pF Overshoot Factor Av = 40dB, RL = 100kΩ CL = 10pF CL = 100pF Equivalent Input Noise Voltage f = 1kHz, Rs = 100Ω 60 60 pA VOH VOL Avd GBP CMR SVR V 50 50 mV V/mV 0.7 80 80 150 200 250 60 60 0.7 80 80 150 200 300 MHz dB dB ICC Io Isink SR φm µA 60 45 0.6 50 30 30 50 38 60 45 0.6 50 30 30 50 38 mA mA V/µs Degrees KOV % nV ----------Hz en 1. Maximum values including unavoidable inaccuracies of the industrial test. 8/15 TS271C,I,M TYPICAL CHARACTERISTICS for ISET = 25µA Figure 11 : Supply Current versus Supply Voltage 200 SUPPLY CURRENT, ICC (µ A) OUTPUT VOLTAGE, VOH (V) Figure 13b : High Level Output Voltage versus High Level Output Current 20 Tamb = 25 ° C 16 12 8 4 0 -50 V id = 100mV VCC = 16V 150 100 VCC = 10V 50 Tamb = 25°C AV = 1 VO = VCC / 2 4 8 12 16 0 -40 -30 -20 -10 0 SUPPLY VOLTAGE, VCC (V) OUTPUT CURRENT, I OH (mA) Figure 12 : Input Bias Current versus Free Air Temperature 100 INPUT BIAS CURRENT, IIB (pA) VCC = 10V V i = 5V Figure 14a : Low Level Output Voltage versus Low Level Output Current 1 .0 0 .8 0 .6 0 .4 0 .2 T amb = 2 5 °C V ic = 0 .5 V V id = -1 0 0 m V 1 2 O U T P U T C U R R E N T , I OL (m A ) 3 VC C = 3 V O U T P U T V O L T A G E , VOL(V ) V CC = 5V 10 1 25 50 75 100 125 0 TEMPERATURE, T amb ( °C) Figure 13a : High Level Output Voltage versus High Level Output Current 5 OUTPUT VOLTAGE, VOH (V) 4 3 2 1 0 -10 VCC = 3V Tamb = 25 ° C V id = 100mV VCC= 5V Figure 14b : Low Level Output Voltage versus Low Level Output Current O U T P U T V O L T A G E , V OL (V ) 3 V C C = 10V 2 VC C = 1 6 V 1 Tamb = 2 5 °C V i = 0 .5 V V = -1 0 0 m V id 0 4 8 12 16 20 -8 -6 -4 -2 0 OUTPUT CURRENT, I OH (mA) O U T P U T C U R R E N T , I OL (m A ) 9/15 TS271C,I,M Figure 15 : Open Loop Frequency Response and Phase Shift Figure 18 : Phase Margin versus Capacitive Load P H A S E M A R G IN , φ m (D e g re e s ) 50 Ta m b = 2 5 °C RL = 100kΩ AV = 1 VC C = 10V 50 P H A S E (D e g re e s ) 40 G A IN 30 G A IN (d B ) PHASE T a m b = 2 5 °C V C C+ = 1 0 V R L = 100kΩ C L = 100pF A VC L = 100 2 3 4 Phase Margin 0 45 90 135 Gain Bandwidth Product 10 10 5 10 6 10 180 40 20 10 0 -1 0 10 30 20 10 7 0 F R E Q U E N C Y , f (H z ) 20 40 60 L 80 (p F ) 100 C A P A C IT A N C E , C Figure 16 : Gain Bandwidth Product versus Supply Voltage G A IN B A N D W . P R O D ., G B P (M H z ) 0.9 0.8 0.7 Ta m b = 2 5 °C RL = 100k Ω CL = 1 0 0 p F AV = 1 Figure 19 : Slew Rate versus Supply Voltage 1.0 S L E W R A T E S , S R (V / µ s ) 0.8 0.6 0.4 0.2 0 Ta m b = 2 5 °C R L = 100k Ω CL = 1 0 0 p F 4 6 8 10 12 S U P P L Y V O L T A G E , VC C 14 (V ) 16 SR SR 0.6 0.5 0.4 0 4 8 12 16 S U P P L Y V O L T A G E , V C C (V ) Figure 17 : Phase Margin versus Supply Voltage P H A S E M A R G IN , φ m (D e g re e s ) 50 40 30 20 10 Ta m b = 2 5 °C R L = 100kΩ CL = 1 0 0 p F AV = 1 4 8 12 16 0 S U P P L Y V O L T A G E , V C C (V ) 10/15 TS271C,I,M ELECTRICAL CHARACTERISTICS for ISET = 130µA VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified) TS271C/AC/BC Symbol Parameter Min. Input Offset Voltage VO = 1.4V, Vic = 0V Vio Tmin ≤ Tamb ≤ Tmax TS271C/I/M TS271AC/AI/AM TS271B/C/I/M TS271C/I/M TS271AC/AI/AM TS271B/C/I/M 1) TS271I/AI/BI TS271M/AM/BM Min. Typ. Max. 10 5 2 12 6.5 3.5 Unit Typ. 1.1 0.9 0.25 Max. 10 5 2 12 6.5 3 1.1 0.9 0.25 mV DVio Iio Input Offset Voltage Drift Input Offset Current note Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax 2 1 100 1 150 8.2 8.1 8.4 8.2 8 50 10 7 15 10 6 2 1 200 1 300 8.4 µV/°C pA Iib Input Bias Current - see note 1 Vic = 5V, VO = 5V Tmin ≤ Tamb ≤ Tmax High Level Output Voltage Vid = 100mV, RL = 10kΩ Tmin ≤ Tamb ≤ Tmax Low Level Output Voltage Vid = -100mV Large Signal Voltage Gain ViC = 5V, RL = 10kΩ, Vo = 1V to 6V Tmin ≤ Tamb ≤ Tmax Gain Bandwidth Product Av = 40dB, RL = 10kΩ, CL = 100pF, fin = 100kHz Common Mode Rejection Ratio ViC = 1V to 7.4V, Vo = 1.4V Supply Voltage Rejection Ratio VCC+ = 5V to 10V, Vo = 1.4V Supply Current (per amplifier) Av = 1, no load, Vo = 5V Tmin ≤ Tamb ≤ Tmax Output Short Circuit Current Vo = 0V, Vid = 100mV Output Sink Current Vo = VCC, Vid = -100mV Slew Rate at Unity Gain RL = 10kΩ, CL = 100pF, Vi = 3 to 7V Phase Margin at Unity Gain Av = 40dB, RL = 10kΩ CL = 10pF CL = 100pF Overshoot Factor Av = 40dB, RL = 10kΩ CL = 10pF CL = 100pF Equivalent Input Noise Voltage f = 1kHz, Rs = 100Ω 60 60 pA VOH VOL Avd GBP CMR SVR V 50 15 mV V/mV 2.3 80 70 800 1300 1400 60 60 2.3 80 70 800 1300 1500 MHz dB dB ICC Io Isink SR φm µA 60 45 4.5 65 30 30 50 30 60 45 4.5 65 30 30 50 30 mA mA V/µs Degrees KOV % nV ----------Hz en 1. Maximum values including unavoidable inaccuracies of the industrial test. 11/15 TS271C,I,M TYPICAL CHARACTERISTICS for ISET = 130µA Figure 20 : Supply Current (each amplifier) versus Supply Voltage 1.0 SUPPLY CURRENT, ICC (mA) OUTPUT VOLTAGE, VOH (V) 0.8 0.6 0.4 0.2 0 Tamb = 25°C AV = 1 VO = VCC / 2 4 8 12 16 Figure 22b : High Level Output Voltage versus High Level Output Current 20 Tamb = 25 ° C 16 12 8 4 0 -50 V id = 100mV VCC = 16V VCC = 10V -40 -30 -20 -10 0 SUPPLY VOLTAGE, VCC (V) OUTPUT CURRENT, I OH (mA) Figure 21 : Input Bias Current versus Free Air Temperature 100 INPUT BIAS CURRENT, IIB (pA) VCC = 10V V i = 5V Figure 23a : Low Level Output Voltage versus Low Level Output Current 1 .0 0 .8 0 .6 0 .4 0 .2 T amb = 2 5 °C V ic = 0 .5 V V id = -1 0 0 m V 1 2 O U T P U T C U R R E N T , I OL (m A ) 3 VC C = 3 V O U T P U T V O L T A G E , VOL(V ) V CC = 5V 10 1 25 50 75 100 125 0 TEMPERATURE, T amb ( °C) Figure 22a : High Level Output Voltage versus High Level Output Current 5 OUTPUT VOLTAGE, VOH (V) 4 3 2 1 0 -10 VCC = 3V Tamb = 25 ° C V id = 100mV VCC= 5V Figure 23b : Low Level Output Voltage versus Low Level Output Current O U T P U T V O L T A G E , V OL (V ) 3 V C C = 10V 2 VC C = 1 6 V 1 Tamb = 2 5 °C V i = 0 .5 V V = -1 0 0 m V id 0 4 8 12 16 20 -8 -6 -4 -2 0 OUTPUT CURRENT, I OH (mA) O U T P U T C U R R E N T , I OL (m A ) 12/15 TS271C,I,M Figure 24 : Open Loop Frequency Response and Phase Shift Figure 27 : Phase Margin versus Capacitive Load P H A S E M A R G IN , φ m (D e g re e s ) 70 Ta m b = 2 5 °C RL = 10k Ω AV = 1 VC C = 10V 50 P H A S E (D e g re e s ) 40 G A IN 30 G A IN (d B ) PHASE T a m b = 2 5 °C V C C+ = 1 0 V R L = 10k Ω C L = 100pF A VC L = 100 2 3 4 Phase Margin 0 45 90 135 Gain Bandwidth Product 10 10 5 10 6 10 180 60 20 10 0 -1 0 10 50 40 10 7 30 0 20 40 60 L F R E Q U E N C Y , f (H z ) 80 (p F ) 100 C A P A C IT A N C E , C Figure 25 : Gain Bandwidth Product versus Supply Voltage G A IN B A N D W . P R O D ., G B P (M H z ) 5 Figure 28 : Slew Rate versus Supply Voltage 5 S L E W R A T E S , S R (V / µ s ) 4 3 Ta m b = 2 5 °C RL = 10k Ω CL = 1 0 0 p F AV = 1 SR 4 3 2 1 0 Ta m b = 2 5 °C R L = 10k Ω CL = 1 0 0 p F 4 6 8 10 12 S U P P L Y V O L T A G E , VC C 14 (V ) 16 SR 2 1 0 4 8 12 16 S U P P L Y V O L T A G E , V C C (V ) Figure 26 : Phase Margin versus Supply Voltage P H A S E M A R G IN , φ m (D e g re e s ) 50 40 30 20 10 Ta m b = 2 5 °C R L = 10k Ω CL = 1 0 0 p F AV = 1 4 8 12 16 0 S U P P L Y V O L T A G E , V C C (V ) 13/15 TS271C,I,M PACKAGE MECHANICAL DATA 8 PINS - PLASTIC DIP Millimeters Dimensions Min. A a1 B b b1 D E e e3 e4 F i L Z 0.51 1.15 0.356 0.204 7.95 2.54 7.62 7.62 6.6 5.08 3.81 1.52 Typ. 3.32 1.65 0.55 0.304 10.92 9.75 0.020 0.045 0.014 0.008 0.313 Max. Min. Inches Typ. 0.131 0.065 0.022 0.012 0.430 0.384 0.100 0.300 0.300 0260 0.200 0.150 0.060 Max. 3.18 0.125 14/15 TS271C,I,M PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICROPACKAGE (SO) L C a3 c1 a2 A s e3 E D M 8 5 F 1 4 Millimeters Dimensions Min. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 0.1 0.65 0.35 0.19 0.25 4.8 5.8 1.27 3.81 3.8 0.4 4.0 1.27 0.6 8° (max.) 0.150 0.016 Typ. Max. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45° (typ.) 5.0 6.2 0.189 0.228 Min. 0.004 0.026 0.014 0.007 0.010 a1 b Inches Typ. Max. 0.069 0.010 0.065 0.033 0.019 0.010 0.020 0.197 0.244 0.050 0.150 0.157 0.050 0.024 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States © http://www.st.com b1 15/15