TS4973EIJT

TS4973 1.2W Two Audio Inputs With Gain Control Power Amplifier with Standby Mode Active Low ■ ■ ■ ■ ■ ■ ■ ■ ■ Operating from VCC = 2.8V to 5.5V RAIL TO RAIL Input/Output 1.2W output power @ Vcc=5V, THD=1%, F=1kHz, with 8Ω load Ultra low consumption in standby mode (10nA) 53dB PSRR @ 217Hz from 2.8 to 5V Low distortion (0.5%) Gain settings pin: GS Unity gain stable Available in lead free flip-chip 9 x 300µm bumps Applications ■ ■ ■ ■ Mobile phones (cellular / cordless) PDAs Laptop/Notebook computers Portable audio devices Pin Connections (top view) Vin2 Description At 3.3v, the TS4973 is an Audio Power Amplifier capable of delivering 500mW of continuous RMS output power into a 8Ω bridged-tied loads with 1% THD+N, and 150mWof continuous average power into 32Ω. An external standby mode control reduces the supply current to less than 10nA. An internal over-temperature shutdown protection is provided. ) s ( ct ) s t( TS4973IJT / TS4973EIJT - FLIP CHIP so STBY GS VOUT2 o r P VOUT1 e t le c u d VCC Vin1 GND BYPASS b O - The TS4973 has been designed for high quality audio applications such as mobile phones and to minimize the number of external components. It has two inputs which can be used to switch the gain between 6dB (internal) or a user’s adjustable gain setting with one external resistance. u d o r P e t e l o Order Codes s b O Part Number TS4973IJT TS4973EIJT TS4973EKIJT October 2004 Temperature Range -40, +85°C -40, +85°C Package Flip-Chip9 Lead Free Flip-Chip FC + Back Coating Revision 2 Packaging Tape & Reel Marking A73 Tape & Reel 1/19 TS4973 1 Application Schematic Application Schematic Figure 1: Typical application schematic VCC Cs VCC 6 Cin1 Rin Audio Inputs 1 In1 - 7 In2 + 9 Gain Setting Vout 1 8 RL 8 Ohms Cin2 Gain Setting level threshold = 0.9V AV = -1 Bypass 5 Standby Vout 2 4 + Bias GND Standby level threshold = 0.9V 3 TS4973 Cb 2 c u d Table 1: Absolute maximum ratings Symbol VCC Parameter Supply voltage 1 e t le 2 Vi Toper Input Voltage Operating Free Air Temperature Range Tstg Storage Temperature Tj Maximum Junction Temperature Pd Thermal Resistance Junction to Ambient 3 Power Dissipation ESD 5 Rthja (t s) Human Body Model ESD Machine Model (min. Value) Latch-up Latch-up Immunity Lead Temperature (soldering, 10sec) 1) 2) 3) 4) 5) o r P e c u d b O - so o r P ) s t( Value Unit 6 V GND to VCC V -40 to + 85 °C -65 to +150 °C 150 °C 200 Internally Limited °C/W 4 1 kV 200 200 250 V mA °C All voltages values are measured with respect to the ground pin. The magnitude of input signal must never exceed VCC + 0.3V / GND - 0.3V Device is protected in case of over temperature by a thermal shutdown active @ 150°C. Exceeding the power derating curves during a long period, may involve abnormal operating condition. Minimum value. Human body model, 100pF discharged through a 1.5kOhm resistor, into pin to Vcc device. t e l o Table 2: Operating conditions s b O Symbol VCC Parameter Value Unit Supply Voltage 2.8 to 5.5 V VSTB Standby Voltage Input: Device ON Device OFF 1.5 ≤ VSTB ≤ VCC GND ≤ VSTB ≤ 0.4 V VGS Gain Setting Voltage Input: External Gain (In1 Input) Internal Gain (In2 Input) 1.5 ≤ VSTB ≤ VCC GND ≤ VSTB ≤ 0.4 V RL Rthja Load Resistor Thermal Resistance Junction to Ambient 1) With Heat Sink Surface = 125mm2 2/19 1 ≥4 Ω 90 °C/W Electrical Characteristics 2 TS4973 Electrical Characteristics Table 3: Electrical Characteristics - VCC = +5V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol Typ. Max. Unit Supply Current No input signal, no load 6 8 mA Standby Current No input signal, VGS = Gnd, Vstdby = Gnd, RL = 8Ω 10 1000 nA Voo Output Offset Voltage No input signal, RL = 8Ω 5 50 mV Po Output Power THD = 1% Max, f = 1kHz, RL = 8Ω 0.85 1.2 BTL GAIN GS = Low (Av = 2) input signal Vin = 100mV rms, No load 5.6 6 THD + N Total Harmonic Distortion + Noise Po = 900mW rms, GS = Low (Av = 2) 20Hz < F < 20kHz, RL = 8Ω 0.5 PSRR Power Supply Rejection Ratio1 F = 217Hz, RL = 8Ω, GS = Low (Av = 2) Vripple = 200mVpp, Input Grounded, Cin = 220nF, Cb = 1µF 53 dB PSRR Power Supply Rejection Ratio2 F = 217Hz, RL = 8Ω, GS = Low (Av = 2) Vripple = 200mVpp, Input Floating, Cb = 1µF 70 dB ICC ISTANDBY Zin Rfeed VN Parameter Min. Internal Feedback Resistor b O - Output Voltage Noise F = 20Hz to 20kHz, RL = 8Ω Unweighted, Vstdby = Gnd A weighted, Vstdby = Gnd Unweighted, GS = Low (Av = 2) A weighted, GS = Low (Av = 2) Unweighted, GS = High (Av = 10) A weighted, GS = High (Av = 10) ct (s) u d o r P e 6.4 dB ) s t( % c u d e t le so Input Impedance GS = Low (Av = 2) W o r P 37.5 50 62.5 KΩ 37.5 50 62.5 KΩ 6 2.5 23 15 56 40 µVRMS 1) Dynamic measurements - 20*log(rms(Vout)/rms (Vripple)). Vripple is an added sinus signal to Vcc @ F = 217Hz 2) Dynamic measurements - 20*log(rms(Vout)/rms (Vripple)). Vripple is an added sinus signal to Vcc @ F = 217Hz t e l o s b O 3/19 TS4973 Electrical Characteristics Table 4: Electrical Characteristics - VCC = +3.3V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol Typ. Max. Unit Supply Current No input signal, no load 5.5 8 mA Standby Current No input signal, VGS = Gnd, Vstdby = Gnd, RL = 8Ω 10 1000 nA Voo Output Offset Voltage No input signal, RL = 8Ω 5 50 mV Po Output Power THD = 1% Max, f = 1kHz, RL = 8Ω 350 500 BTL GAIN GS = Low (Av = 2) input signal Vin = 100mV rms, No load 5.6 6 THD + N Total Harmonic Distortion + Noise Po = 380mW rms, GS = Low (Av = 2) 20Hz < F < 20kHz, RL = 8Ω 0.5 PSRR Power Supply Rejection Ratio1 F = 217Hz, RL = 8Ω, GS = Low (Av = 2) Vripple = 200mVpp, Input Grounded, Cin = 220nF, Cb = 1µF 53 PSRR Power Supply Rejection Ratio2 F = 217Hz, RL = 8Ω, GS = Low (Av = 2) Vripple = 200mVpp, Input Floating, Cb = 1µF ICC ISTANDBY Zin Rfeed VN Parameter Input Impedance GS = Low (Av = 2) Internal Feedback Resistor Min. ) s t( % uc 68 dB dB 50 62.5 KΩ 37.5 50 62.5 KΩ 6 2.5 23 15 56 40 t c u d o r P e dB 37.5 Output Voltage Noise F = 20Hz to 20kHz, RL = 8Ω Unweighted, Vstdby = Gnd A weighted, Vstdby = Gnd Unweighted, GS = Low (Av = 2) A weighted, GS = Low (Av = 2) Unweighted, GS = High (Av = 10) A weighted, GS = High (Av = 10) (s) 6.4 d o r P e let o s b O - mW µVRMS 1) Dynamic measurements - 20*log(rms(Vout)/rms (Vripple)). Vripple is an added sinus signal to Vcc @ F = 217Hz 2) Dynamic measurements - 20*log(rms(Vout)/rms (Vripple)). Vripple is an added sinus signal to Vcc @ F = 217Hz Table 5: Electrical characteristics - VCC = 2.8V, GND = 0V, Tamb = 25°C (unless otherwise specified) t e l o Symbol bs ICC O ISTANDBY Voo BTL GAIN Po 4/19 Parameter Min. Typ. Max. Unit Supply Current No input signal, no load 5.5 8 mA Standby Current No input signal, VGS = Gnd, Vstdby = Gnd, RL = 8Ω 10 1000 nA Output Offset Voltage No input signal, RL = 8Ω 5 50 mV 6.4 dB GS = Low (Av = 2) input signal Vin = 100mV rms, No load 5.6 6 Output Power THD = 1% Max, f = 1kHz, RL = 8Ω 250 350 mW Electrical Characteristics TS4973 Table 5: Electrical characteristics - VCC = 2.8V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Total Harmonic Distortion + Noise Po = 250mW rms, GS = Low (Av = 2) 20Hz < F < 20kHz, RL = 8Ω 0.5 % PSRR Power Supply Rejection Ratio1 F = 217Hz, RL = 8Ω, GS = Low (Av = 2) Vripple = 200mVpp, Input Grounded, Cin = 220nF, Cb = 1µF 53 dB PSRR Power Supply Rejection Ratio2 F = 217Hz, RL = 8Ω, GS = Low (Av = 2) Vripple = 200mVpp, Input Floating, Cb = 1µF 68 dB THD + N Zin Rfeed VN Input Impedance GS = Low (Av = 2) 37.5 50 62.5 Internal Feedback Resistor 37.5 50 62.5 Output Voltage Noise F = 20Hz to 20kHz, RL = 8Ω Unweighted, Vstdby = Gnd A weighted, Vstdby = Gnd Unweighted, GS = Low (Av = 2) A weighted, GS = Low (Av = 2) Unweighted, GS = High (Av = 10) A weighted, GS = High (Av = 10) 6 2.5 23 15 56 40 c u d e t le KΩ KΩ ) s t( o r P µVRMS 1) Dynamic measurements - 20*log(rms(Vout)/rms (Vripple)). Vripple is an added sinus signal to Vcc @ F = 217Hz 2) Dynamic measurements - 20*log(rms(Vout)/rms (Vripple)). Vripple is an added sinus signal to Vcc @ F = 217Hz o s b O - Table 6: Application Components Information Components Functional Description Rin Inverting input resistor which sets the closed loop gain (when GS = high) in conjunction with the internal feedback resistor Rfeed. This resistor also forms a high pass filter with Cin1 Fc = 1 / (2 x Pi x Rin x Cin1) Cin1 Input coupling capacitor which blocks the DC voltage at the amplifier input terminal In1 Cin2 Input coupling capacitor which blocks the DC voltage at the amplifier input terminal In2. This capacitor also forms a high pass filter with Zin (internal input impedance when Gs = Low Fc = 1 / (2 x Pi x Zin x Cin2) ) s ( ct u d o r P e Cs Supply Bypass capacitor which provides power supply filtering (Recommended value = 1µF) Cb Bypass pin capacitor which provides half supply filtering (Recommended value = 1µF) t e l o s b O Av Closed loop gain in BTL configuration When Gs = Low, Av = 2 or 6dB When GS = high, Av = 2 x (Rfeed / Rin). Rfeed value see Electrical Characteristics. Remarks: 1. All measurements, except PSRR measurements, are made with a supply bypass capacitor Cs = 1µF. 2. The standby response time is about 1µs. 5/19 TS4973 Electrical Characteristics Figure 2: Power supply rejection ratio (psrr) vs power supply Figure 5: Power supply rejection ratio (PSRR) vs bypass capacitor 0 0 -20 -30 -10 -20 PSRR (dB) PSRR (dB) -10 Vripple = 200mVpp Av = 2 Input = Grounded Cb = Cin = 1µF RL ≥ 4Ω Tamb = 25°C Vcc : 2.8V 3.3V 5V -40 -30 Vripple = 200mVpp Av = 2, Vcc = 5V Input = Grounded Cin = 1µF RL ≥ 4Ω Tamb = 25°C -40 Cb=1µF Cb=2.2µF -50 -50 -60 Cb=4.7µF -60 100 1000 10000 Frequency (Hz) -70 100000 Figure 3: Power supply rejection ratio (PSRR) vs power supply 0 PSRR (dB) -20 -30 -10 PSRR (dB) Vripple = 200mVpp Av = 5 Input = Grounded Cb = Cin = 1µF RL ≥ 4Ω Tamb = 25°C -10 Vcc : 2.8V 3.3V 5V -40 -20 -30 c u d o r P Vripple = 200mVpp Av = 5, Vcc = 2.8V Input = Grounded Cin = 1µF RL ≥ 4Ω Tamb = 25°C e t le o s b O - 100 (s) t c u 1000 10000 Frequency (Hz) -60 100000 d o r P e Figure 4: Power supply rejection ratio (PSRR) vs power supply Cb=1µF Cb=2.2µF Vripple = 200mVpp Av = 10 Input = Grounded Cb = Cin = 1µF RL ≥ 4Ω Tamb = 25°C 100000 Vripple = 200mVpp Av = 10, Vcc = 3.3V Input = Grounded Cin = 1µF, RL ≥ 4Ω Tamb = 25°C -10 Vcc : 2.8V 3.3V 5V -30 Cb=4.7µF 1000 10000 Frequency (Hz) 0 PSRR (dB) bs 100 Figure 7: Power supply rejection ratio (PSRR) vs bypass capacitor t e l o 0 PSRR (dB) ) s t( -50 -60 O 100000 -40 -50 -20 1000 10000 Frequency (Hz) Figure 6: Power supply rejection ratio (PSRR) vs bypass capacitor 0 -10 100 -20 -30 Cb=1µF -40 -40 Cb=2.2µF -50 Cb=4.7µF -50 6/19 100 1000 10000 Frequency (Hz) 100000 -60 100 1000 10000 Frequency (Hz) 100000 Electrical Characteristics TS4973 Figure 8: Power supply rejection ratio (PSRR) Figure 11: Signal to noise ratio vs power supply with a weighted filter 110 0 Vripple = 200mVpp Input = Floating Cb = 1µF RL ≥ 4Ω Tamb = 25°C -10 PSRR (dB) -20 100 RL=16Ω -40 -50 RL=8Ω RL=4Ω 90 SNR (dB) -30 Vcc : 2.8V 3.3V 5V 80 -60 Av = 2 Cb = Cin = 1µF THD+N < 0.5% Tamb = 25°C 70 -70 -80 100 1000 10000 Frequency (Hz) 60 2.8 3.0 100000 -60 e t le 90 Vcc=5V, Vin1=0.27Vrms Vcc=2.8V, Vin1=0.15Vrms -80 20 100 1000 Frequency (Hz) o r P e c u d o s b O 80 (t s) t e l o s b O RL ≥ 4Ω Gain setting = Vcc -20 Av = 10 In1 = Grounded -30 Cb = 1µF Bw < 125kHz -40 Tamb = 25°C ) s t( RL=8Ω RL=4Ω RL=16Ω Av = 10 Cb = Cin = 1µF THD+N < 1% Tamb = 25°C 60 2.8 3.0 10000 20k Figure 10: Crosstalk between inputs vs frequency 0 5.0 o r P 70 -100 3.5 4.0 4.5 5.0 Vcc (V) Figure 13: Signal to noise ratio vs power supply with unweighted filter (20Hz to 20kHz) 100 -10 90 RL=16Ω Vcc=5V, Vin2=1.4Vrms Vcc=2.8V, Vin2=0.7Vrms SNR (dB) Crosstalk Refered to Vin2 (dB) c u d 100 SNR (dB) Crosstalk Refered to Vin1 (dB) -40 4.5 Figure 12: Signal to noise ratio vs power supply with a weighted filter 0 -20 4.0 Vcc (V) Figure 9: Crosstalk between inputs vs frequency RL ≥ 4Ω Gain setting = GND Av = 2 In2 = Grounded Cb = 1µF Bw < 125kHz Tamb = 25°C 3.5 -50 RL=8Ω 70 -60 Av = 2 Cb = Cin = 1µF THD+N < 0.5% Tamb = 25°C 60 -70 -80 20 100 1000 Frequency (Hz) 10000 20k RL=4Ω 80 50 2.8 3.0 3.5 4.0 Vcc (V) 4.5 5.0 7/19 TS4973 Electrical Characteristics Figure 14: Signal to noise ratio vs power supply with unweighted filter (20Hz to 20kHz) Figure 17: Power dissipation vs output power 1.4 Power Dissipation (W) 90 SNR (dB) 80 RL=8Ω 70 RL=4Ω RL=16Ω Av = 10 Cb = Cin = 1µF THD+N < 1% Tamb = 25°C 60 50 2.8 3.0 3.5 4.0 Vcc (V) 4.5 5.0 0.2 0.4 6Ω 4Ω 16 Ω 0.4 (s) 32 Ω 3.5 4.0 Power Supply (V) u d o ct 4.5 t e l o bs ) s t( 0.3 o r P RL=4Ω 0.2 RL=8Ω 0.0 0.0 RL=16Ω 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Output Power (W) 0.40 RL=4Ω 0.35 Power Dissipation (W) 6Ω 16 Ω 0.8 0.30 0.25 0.20 RL=8Ω 0.15 0.10 0.4 0.05 32 Ω 3.5 1.6 Figure 19: Power dissipation vs output power 1.2 0.0 2.8 3.0 1.4 0.1 8Ω 4Ω 0.4 e t le o s b O - 5.0 r P e Cb = 1µF F = 1kHz 1.6 BW < 125kHz Tamb = 25°C 0.8 1.0 1.2 Output Power (W) c u d Vcc=3.3V F=1kHz 0.5 THD+N