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TS4998IQT

TS4998IQT

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    VQFN16_EP

  • 描述:

    Amplifier IC 2-Channel (Stereo) Class AB 16-QFN (4x4)

  • 数据手册
  • 价格&库存
TS4998IQT 数据手册
TS4998 2 x 1W differential input stereo audio amplifier Features QFN16 4x4mm ■ Operating range from VCC= 2.7V to 5.5V ■ 1W output power per channel @ VCC=5V, THD+N=1%, RL=8Ω ■ Ultra low standby consumption: 10nA typ. ■ 80dB PSRR @ 217Hz with grounded inputs ■ High SNR: 106dB(A) typ. ■ Fast startup time: 45ms typ. ■ Pop&click-free circuit ■ Dedicated standby pin per channel ■ Lead-free QFN16 4x4mm package Cellular mobile phones ■ Notebook and PDA computers ■ LCD monitors and TVs ■ Portable audio devices Description u d o r P e t e l o Pin connections (top view) Applications ■ ) s ( ct ) (s s b O t c u d o r P e The TS4998 is designed for top-class stereo audio applications. Thanks to its compact and power-dissipation efficient QFN16 package with exposed pad, it suits a variety of applications. t e l o s b O With a BTL configuration, this audio power amplifier is capable of delivering 1W per channel of continuous RMS output power into an 8Ω load @ 5V. Each output channel (left and right), also has its own external controlled standby mode pin to reduce the supply current to less than 10nA per channel. The device also features an internal thermal shutdown protection. The gain of each channel can be configured by external gain setting resistors. December 2007 Rev 1 1/33 www.st.com 33 Contents TS4998 Contents 1 Typical application schematics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 s b O 7 2/33 General description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.2 Differential configuration principle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.3 Gain in typical application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.4 Common mode feedback loop limitations . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.5 Low frequency response . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.6 Power dissipation and efficiency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4.7 Footprint recommendation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 4.8 Decoupling of the circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 4.9 Standby control and wake-up time tWU 4.10 Shutdown time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 4.11 Pop performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 4.12 Single-ended input configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 4.13 Notes on PSRR measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 u d o r P e t e l o )- s ( t c s b O . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 u d o r P e t e l o 5 6 ) s ( ct 4.1 QFN16 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 TS4998 1 Typical application schematics Typical application schematics Figure 1 shows a typical application for the TS4998 with a gain of +6dB set by the input resistors. Figure 1. Typical application schematics VCC Cs ) s ( ct Optional Diff. input L- 13 1uF U1 Cin1 Rin1 330nF 25k TS4998 u d o Vcc P1 4 RIN- 3 RIN+ LEFT Diff. input R- Cin3 Rin3 330nF 25k P3 Cin4 Rin4 330nF 25k ) (s t c u r P e b O 14 Bypass BIAS GND 1uF Cb GND t e l o s b O Table 1. LOUT+ 11 - ROUT- 9 + ROUT+ 10 Left Speaker 8 Ohms Right Speaker 8 Ohms STBY STBYL Control od l o s RIGHT P4 Diff. input R+ ete + STBYL 25k 8 330nF 6 Diff. input L+ 12 STBYR LIN+ - 7 2 Rin2 P2 Pr LOUT- TS4998 - QFN16 STBYR Control LIN- 5 Cin2 1 External component descriptions Components Functional description RIN Input resistors that set the closed loop gain in conjunction with a fixed internal feedback resistor (Gain = Rfeed/RIN, where Rfeed = 50kΩ). CIN Input coupling capacitors that block the DC voltage at the amplifier input terminal. Thanks to common mode feedback, these input capacitors are optional. However, if they are added, they form with RIN a 1st order high pass filter with -3dB cut-off frequency (fcut-off = 1 / (2 x π x RIN x CIN)). CS Supply bypass capacitors that provides power supply filtering. CB Bypass pin capacitor that provides half supply filtering. 3/33 Absolute maximum ratings 2 TS4998 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 6 V GND to VCC V Supply voltage (1) VCC Vin Input voltage (2) Toper Operating free air temperature range -40 to + 85 °C Tstg Storage temperature -65 to +150 °C Maximum junction temperature 150 °C Thermal resistance junction to ambient 120 Tj Rthja Power dissipation Pd ) s ( ct °C/W Internally limited ESD Human body model (3) Digital pins STBYL, STBYR ESD Machine model let Latch-up immunity 1. All voltage values are measured with respect to the ground pin. o s b kV 200 V 200 mA r P e u d o 2 1.5 2. The magnitude of the input signal must never exceed VCC + 0.3V / GND - 0.3V. 3. All voltage values are measured from each pin with respect to supplies. Table 3. Symbol Supply voltage VICM Common mode input voltage range e t e ol du o r P RL 4/33 s ( t c Parameter VCC VSTBY s b O O ) Operating conditions Standby voltage input: Device ON Device OFF Load resistor ROUT/GND Output resistor to GND (VSTBY = GND) Value Unit 2.7 to 5.5 V GND to VCC - 1V V 1.3 ≤ VSTBY ≤ VCC GND ≤ VSTBY ≤0.4 V ≥4 Ω ≥1 MΩ TSD Thermal shutdown temperature 150 °C Rthja Thermal resistance junction to ambient QFN16(1) QFN16(2) 45 85 °C/W 1. When mounted on a 4-layer PCB with vias. 2. When mounted on a 2-layer PCB with vias. TS4998 Electrical characteristics 3 Electrical characteristics Table 4. VCC = +5V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol Typ. Max. Unit Supply current No input signal, no load, left and right channel active 7.4 9.6 mA Standby current (1) No input signal, VSTBYL = GND, VSTBYR = GND, RL = 8Ω 10 2000 nA Voo Output offset voltage No input signal, RL = 8Ω 1 35 mV Po Output power THD = 1% max, F = 1kHz, RL = 8Ω ICC ISTBY THD + N PSRR CMRR Parameter Crosstalk Power supply rejection ratio(2), inputs grounded RL = 8Ω, G = 6dB, Cb = 1µF, Vripple = 200mVpp F = 217Hz F = 1kHz Common mode rejection ratio(3) RL = 8Ω, G = 6dB, Cb = 1µF, Vincm = 200mVpp s b O ) (s mW u d o r P e t e l o s b O dB 57 57 Channel separation, RL = 8Ω, G = 6dB F = 1kHz F = 20Hz to 20kHz Pr 108 dB 105 80 dB Output voltage noise, F = 20Hz to 20kHz, RL = 8Ω, G=6dB Cb = 1µF µVrms 15 10 Unweighted A-weighted 40 kΩ ---------------- % dB 80 75 ct u d o ) s ( ct 1000 0.5 Signal-to-noise ratio A-weighted, G = 6dB, Cb = 1µF, RL = 8Ω (THD + N ≤ 0.5%, 20Hz < F < 20kHz) e t e ol VN 800 Total harmonic distortion + noise Po = 700mWrms, G = 6dB, RL = 8Ω, 20Hz ≤ F ≤ 20kHz F = 217Hz F = 1kHz SNR Min. 50 kΩ ---------------- 60 kΩ ---------------- Gain Gain value (RIN in kΩ) tWU Wake-up time (Cb = 1µF) 46 ms tSTBY Standby time (Cb = 1µF) 10 µs ΦM Phase margin at unity gain RL = 8Ω, CL = 500pF 65 Degrees GM Gain margin, RL = 8Ω, CL = 500pF 15 dB GBP Gain bandwidth product, RL = 8Ω 1.5 MHz R IN R IN R IN V/V 1. Standby mode is active when VSTBY is tied to GND. 2. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the sinusoidal signal superimposed upon VCC. 3. Dynamic measurements - 20*log(rms(Vout)/rms(Vincm)). 5/33 Electrical characteristics Table 5. TS4998 VCC = +3.3V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol Typ. Max. Unit Supply current No input signal, no load, left and right channel active 6.6 8.6 mA Standby current (1) No input signal, VSTBYL = GND, VSTBYR = GND, RL = 8Ω 10 2000 nA Voo Output offset voltage No input signal, RL = 8Ω 1 35 mV Po Output power THD = 1% max, F = 1kHz, RL = 8Ω ICC ISTBY THD + N Parameter Min. 370 Total harmonic distortion + noise Po = 300mWrms, G = 6dB, RL = 8Ω, 20Hz ≤ F ≤ 20kHz 460 CMRR Power supply rejection inputs grounded RL = 8Ω, G = 6dB, Cb = 1µF, Vripple = 200mVpp F = 217Hz F = 1kHz SNR Crosstalk Signal-to-noise ratio A-weighted, G = 6dB, Cb = 1µF, RL = 8Ω (THD + N ≤ 0.5%, 20Hz < F < 20kHz) ) (s u d o r P e t e l o s b O ct 104 dB 105 80 dB Output voltage noise, F = 20Hz to 20kHz, RL = 8Ω, G=6dB Cb = 1µF VN e t e ol Gain s b O Pr Unweighted A-weighted Gain value (RIN in kΩ) µVrms 15 10 40 kΩ ---------------R IN dB dB 57 57 Channel separation, RL = 8Ω, G = 6dB F = 1kHz F = 20Hz to 20kHz u d o % 80 75 Common mode rejection ratio(3) RL = 8Ω, G = 6dB, Cb = 1µF, Vincm = 200mVpp F = 217Hz F = 1kHz ) s ( ct 0.5 ratio(2), PSRR mW 50 kΩ ---------------R IN 60 kΩ ---------------R IN V/V tWU Wake-up time (Cb = 1µF) 47 ms tSTBY Standby time (Cb = 1µF) 10 µs ΦM Phase margin at unity gain RL = 8Ω, CL = 500pF 65 Degrees GM Gain margin, RL = 8Ω, CL = 500pF 15 dB GBP Gain bandwidth product, RL = 8Ω 1.5 MHz 1. Standby mode is active when VSTBY is tied to GND. 2. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the sinusoidal signal superimposed upon VCC. 3. Dynamic measurements - 20*log(rms(Vout)/rms(Vincm)). 6/33 TS4998 Table 6. Electrical characteristics VCC = +2.7V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol Typ. Max. Unit Supply current No input signal, no load, left and right channel active 6.2 8.1 mA Standby current (1) No input signal, VSTBYL = GND, VSTBYR = GND, RL = 8Ω 10 2000 nA Voo Output offset voltage No input signal, RL = 8Ω 1 35 mV Po Output power THD = 1% max, F = 1kHz, RL = 8Ω ICC ISTBY THD + N Parameter Min. 220 Total harmonic distortion + noise Po = 200mWrms, G = 6dB, RL = 8Ω, 20Hz ≤ F ≤ 20kHz 295 CMRR Power supply rejection inputs grounded RL = 8Ω, G = 6dB, Cb = 1µF, Vripple = 200mVpp F = 217Hz F = 1kHz SNR Crosstalk Signal-to-noise ratio A-weighted, G = 6dB, Cb = 1µF, RL = 8Ω (THD + N ≤ 0.5%, 20Hz < F < 20kHz) ) (s u d o r P e t e l o s b O ct 102 dB 105 80 dB Output voltage noise, F = 20Hz to 20kHz, RL = 8Ω, G=6dB Cb = 1µF VN e t e ol Gain s b O Pr Unweighted A-weighted Gain value (RIN in kΩ) µVrms 15 10 40 kΩ ---------------R IN dB dB 57 57 Channel separation, RL = 8Ω, G = 6dB F = 1kHz F = 20Hz to 20kHz u d o % 76 73 Common mode rejection ratio(3) RL = 8Ω, G = 6dB, Cb = 1µF, Vincm = 200mVpp F = 217Hz F = 1kHz ) s ( ct 0.5 ratio(2), PSRR mW 50 kΩ ---------------R IN 60 kΩ ---------------R IN V/V tWU Wake-up time (Cb = 1µF) 46 ms tSTBY Standby time (Cb = 1µF) 10 µs ΦM Phase margin at unity gain RL = 8Ω, CL = 500pF 65 Degrees GM Gain margin, RL = 8Ω, CL = 500pF 15 dB GBP Gain bandwidth product, RL = 8Ω 1.5 MHz 1. Standby mode is active when VSTBY is tied to GND. 2. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the sinusoidal signal superimposed upon VCC. 3. Dynamic measurements - 20*log(rms(Vout)/rms(Vincm)). 7/33 Electrical characteristics Table 7. TS4998 Index of graphics Description Figure THD+N vs. output power Figure 2 to 13 page 9 to page 10 THD+N vs. frequency Figure 14 to 19 page 11 PSRR vs. frequency Figure 20 to 28 page 12 to page 13 PSRR vs. common mode input voltage Figure 29 page 13 CMRR vs. frequency Figure 30 to 35 page 13 to page 14 CMRR vs. common mode input voltage Figure 36 page 14 Crosstalk vs. frequency Figure 37 to 39 page 14 to page 15 SNR vs. power supply voltage Figure 40 to 45 page 15 to page 16 Differential DC output voltage vs. common mode input voltage Figure 46 to 48 page 16 Current consumption vs. power supply voltage Figure 49 Current consumption vs. standby voltage Figure 50 to 52 e t e ol Standby current vs. power supply voltage Figure 53 Frequency response Output power vs. load resistance Output power vs. power supply voltage Power dissipation vs. output power ) (s Power derating curves t c u d o r P e t e l o s b O 8/33 Page s b O ) s ( ct Pr u d o page 16 page 17 page 17 Figure 54 to 56 page 17 to page 18 Figure 57 page 18 Figure 58 to 59 page 18 Figure 60 to 62 page 18 to page 19 Figure 63 page 19 TS4998 Figure 2. Electrical characteristics THD+N vs. output power Figure 3. 10 RL = 4 Ω G = +6dB F = 1kHz Cb = 1 μ F 1 BW < 125kHz Tamb = 25 ° C Vcc=3.3V Vcc=2.7V 0.1 0.01 1E-3 RL = 4 Ω G = +12dB F = 1kHz Cb = 1 μ F 1 BW < 125kHz Tamb = 25 ° C Vcc=5V THD + N (%) THD + N (%) 10 THD+N vs. output power 0.01 0.1 Vcc=3.3V Vcc=2.7V 0.1 0.01 1E-3 1 Vcc=5V 0.01 Output power (W) Figure 4. THD+N vs. output power Vcc=5V Vcc=3.3V Vcc=2.7V ) (s 0.1 0.01 1E-3 0.01 t c u d o r 0.1 THD + N (%) THD + N (%) THD+N vs. output power RL = 8 Ω G = +12dB F = 1kHz Cb = 1 μ F 1 BW < 125kHz Tamb = 25 ° C e t e l so b O 0.01 P e RL = 16 Ω G = +6dB F = 1kHz Cb = 1 μ F 1 BW < 125kHz Tamb = 25 ° C Figure 7. Vcc=5V Vcc=3.3V Vcc=2.7V 0.1 0.01 1E-3 0.01 1 THD+N vs. output power 10 THD + N (%) THD + N (%) O bs 0.1 Output power (W) THD+N vs. output power t e l o 10 Vcc=3.3V Vcc=2.7V 0.01 1E-3 1 Vcc=5V 0.1 Output power (W) Figure 6. o r P 10 RL = 8 Ω G = +6dB F = 1kHz Cb = 1 μ F 1 BW < 125kHz Tamb = 25 ° C 1 c u d Figure 5. 10 ) s ( t 0.1 Output power (W) 0.1 Output power (W) 1 RL = 16 Ω G = +12dB F = 1kHz Cb = 1 μ F 1 BW < 125kHz Tamb = 25 ° C Vcc=5V Vcc=3.3V Vcc=2.7V 0.1 0.01 1E-3 0.01 0.1 1 Output power (W) 9/33 Electrical characteristics Figure 8. TS4998 THD+N vs. output power Figure 9. 10 10 RL = 4 Ω G = +6dB F = 10kHz Cb = 1 μ F 1 BW < 125kHz Tamb = 25 ° C Vcc=3.3V Vcc=2.7V 0.1 0.01 1E-3 RL = 4 Ω G = +12dB F = 10kHz Cb = 1 μ F 1 BW < 125kHz Tamb = 25 ° C Vcc=5V THD + N (%) THD + N (%) THD+N vs. output power 0.01 0.1 Vcc=3.3V Vcc=2.7V 0.1 0.01 1E-3 1 Vcc=5V 0.01 Output power (W) Figure 11. THD+N vs. output power 10 Vcc=2.7V ) (s 0.01 t c u d o r 0.1 RL = 8 Ω G = +12dB F = 10kHz Cb = 1 μ F 1 BW < 125kHz Tamb = 25 ° C e t e l b O Output power (W) P e t e l o Vcc=5V Vcc=3.3V Vcc=2.7V 0.01 0.1 Output power (W) 10/33 0.1 1 10 0.1 0.01 1E-3 0.01 Figure 13. THD+N vs. output power THD + N (%) O THD + N (%) bs Vcc=2.7V Output power (W) Figure 12. THD+N vs. output power RL = 16 Ω G = +6dB F = 10kHz Cb = 1 μ F 1 BW < 125kHz Tamb = 25 ° C Vcc=3.3V 0.1 0.01 1E-3 1 Vcc=5V so Vcc=3.3V THD + N (%) THD + N (%) Vcc=5V 0.1 10 o r P 10 0.01 1E-3 1 c u d Figure 10. THD+N vs. output power RL = 8 Ω G = +6dB F = 10kHz Cb = 1 μ F 1 BW < 125kHz Tamb = 25 ° C ) s ( t 0.1 Output power (W) 1 RL = 16 Ω G = +12dB F = 10kHz Cb = 1 μ F 1 BW < 125kHz Tamb = 25 ° C Vcc=5V Vcc=3.3V Vcc=2.7V 0.1 0.01 1E-3 0.01 0.1 Output power (W) 1 TS4998 Electrical characteristics Figure 14. THD+N vs. frequency 10 10 RL = 4 Ω G = +6dB Cb = 1 μ F BW < 125kHz Tamb = 25 ° C Vcc=5V Pout=950mW 1 Vcc=3.3V Pout=430mW THD + N (%) THD + N (%) 1 Figure 15. THD+N vs. frequency 0.1 RL = 4 Ω G = +12dB Cb = 1 μ F BW < 125kHz Tamb = 25 ° C Vcc=5V Pout=950mW Vcc=3.3V Pout=430mW 0.1 Vcc=2.7V Pout=260mW Vcc=2.7V Pout=260mW 0.01 100 1000 0.01 10000 100 Frequency (Hz) Figure 16. THD+N vs. frequency 10 Vcc=5V Pout=700mW 1 O ) Vcc=2.7V Pout=200mW s ( t c du 100 1000 t e l o 0.01 10000 o r P 100 0.01 THD + N (%) THD + N (%) RL = 16 Ω G = +12dB Cb = 1 μ F BW < 125kHz 1 Tamb = 25 ° C Vcc=5V Pout=450mW Vcc=3.3V Pout=200mW Vcc=2.7V Pout=120mW 100 10000 10 RL = 16 Ω G = +6dB Cb = 1 μ F BW < 125kHz 1 Tamb = 25 ° C 0.1 1000 Figure 19. THD+N vs. frequency 10 O Vcc=3.3V Pout=300mW Frequency (Hz) Figure 18. THD+N vs. frequency bs Vcc=5V Pout=700mW Vcc=2.7V Pout=200mW 0.1 Frequency (Hz) e t e ol u d o r P e RL = 8 Ω G = +12dB Cb = 1 μ F BW < 125kHz Tamb = 25 ° C bs Vcc=3.3V Pout=300mW THD + N (%) THD + N (%) RL = 8 Ω G = +6dB Cb = 1 μ F BW < 125kHz 1 Tamb = 25 ° C 0.01 10000 Figure 17. THD+N vs. frequency 10 0.1 ) s ( ct 1000 Frequency (Hz) 1000 Frequency (Hz) 10000 Vcc=5V Pout=450mW Vcc=3.3V Pout=200mW Vcc=2.7V Pout=120mW 0.1 0.01 100 1000 10000 Frequency (Hz) 11/33 Electrical characteristics TS4998 Figure 20. PSRR vs. frequency Figure 21. PSRR vs. frequency 0 -20 -30 PSRR (dB) -40 0 Vcc = 5V Vripple = 200mVpp G = +6dB Cb = 1 μ F, Cin = 4.7 μ F Inputs Grounded Tamb = 25 ° C -20 -30 -50 -60 -40 -50 -60 -70 -70 -80 -80 -90 -90 -100 Vcc = 5V Vripple = 200mVpp G = +12dB Cb = 1 μ F, Cin = 4.7 μ F Inputs Grounded Tamb = 25 ° C -10 PSRR (dB) -10 100 1000 -100 10000 100 Frequency (Hz) Figure 22. PSRR vs. frequency Figure 23. PSRR vs. frequency 0 -20 -30 -10 -30 PSRR (dB) -50 -60 )- -70 -90 c u d 100 1000 s b O -40 -50 -60 -70 t(s -80 -100 r P e Vcc = 3.3V Vripple = 200mVpp G = +6dB Cb = 1 μ F, Cin = 4.7 μ F Inputs Grounded Tamb = 25 ° C t e l o -20 -40 -80 -90 -100 10000 100 1000 Frequency (Hz) Frequency (Hz) Figure 24. PSRR vs. frequency Figure 25. PSRR vs. frequency e t e ol o r P 0 bs -20 -40 PSRR (dB) O -30 -10 -20 -30 -50 -60 -60 -70 -80 -90 -90 1000 Frequency (Hz) 12/33 -50 -80 100 10000 Vcc = 3.3V Vripple = 200mVpp Cb = 1 μ F Inputs Floating Tamb = 25 ° C -40 -70 -100 10000 0 Vcc = 3.3V Vripple = 200mVpp G = +12dB Cb = 1 μ F, Cin = 4.7 μ F Inputs Grounded Tamb = 25 ° C PSRR (dB) -10 10000 u d o 0 Vcc = 5V Vripple = 200mVpp Cb = 1 μ F Inputs Floating Tamb = 25 ° C PSRR (dB) -10 ) s ( ct 1000 Frequency (Hz) -100 100 1000 Frequency (Hz) 10000 TS4998 Electrical characteristics Figure 26. PSRR vs. frequency Figure 27. PSRR vs. frequency 0 -20 -30 PSRR (dB) -40 0 Vcc = 2.7V Vripple = 200mVpp G = +6dB Cb = 1 μ F, Cin = 4.7 μ F Inputs Grounded Tamb = 25 ° C -20 -30 -50 -60 -40 -50 -60 -70 -70 -80 -80 -90 -90 -100 Vcc = 2.7V Vripple = 200mVpp G = +12dB Cb = 1 μ F, Cin = 4.7 μ F Inputs Grounded Tamb = 25 ° C -10 PSRR (dB) -10 100 1000 -100 10000 100 Frequency (Hz) Figure 29. PSRR vs. common mode input voltage 0 -30 Vcc = 2.7V Vripple = 200mVpp Cb = 1 μ F Inputs Floating Tamb = 25 ° C -20 PSRR (dB) s b O -30 -50 ) (s -60 -70 t c u -80 -90 -100 od 100 1000 r P e -40 -50 -80 -90 -20 -30 let 1 2 3 4 5 Figure 31. CMRR vs. frequency 0 Vcc = 5V RL ≥ 8 Ω G = +6dB Vic = 200mVpp Cb = 1 μ F, Cin = 4.7 μ F Tamb = 25°C -10 -20 -40 -30 -50 -60 -60 100 1000 Frequency (Hz) 10000 Vcc = 5V RL ≥ 8 Ω G = +12dB Vic = 200mVpp Cb = 1 μ F, Cin = 4.7 μ F Tamb = 25°C -40 -50 -70 0 Common Mode Input Voltage (V) CMRR (dB) CMRR (dB) b O Vcc=5V -70 10000 Figure 30. CMRR vs. frequency -10 Vcc=3.3V Vcc=2.7V -60 Frequency (Hz) so t e l o Vripple = 200mVpp F = 217Hz, G = +6dB Cb = 1 μ F, RL ≥ 8 Ω Tamb = 25°C -10 -40 0 r P e 0 PSRR (dB) -20 10000 u d o Figure 28. PSRR vs. frequency -10 ) s ( ct 1000 Frequency (Hz) -70 100 1000 10000 Frequency (Hz) 13/33 Electrical characteristics TS4998 Figure 32. CMRR vs. frequency Figure 33. CMRR vs. frequency 0 0 Vcc = 3.3V RL ≥ 8 Ω G = +6dB Vic = 200mVpp Cb = 1 μ F, Cin = 4.7 μ F Tamb = 25°C CMRR (dB) -20 -30 -10 -20 CMRR (dB) -10 -40 -30 -40 -50 -50 -60 -60 -70 100 1000 Vcc = 3.3V RL ≥ 8 Ω G = +12dB Vic = 200mVpp Cb = 1 μ F, Cin = 4.7 μ F Tamb = 25°C -70 10000 100 Frequency (Hz) Figure 34. CMRR vs. frequency -30 -10 -20 -40 )- -50 -70 du 100 1000 t e l o -30 -40 -50 s ( t c -60 Vcc = 2.7V RL ≥ 8 Ω G = +12dB Vic = 200mVpp Cb = 1 μ F, Cin = 4.7 μ F Tamb = 25°C s b O CMRR (dB) -20 CMRR (dB) r P e 0 Vcc = 2.7V RL ≥ 8 Ω G = +6dB Vic = 200mVpp Cb = 1 μ F, Cin = 4.7 μ F Tamb = 25°C -60 -70 10000 100 Frequency (Hz) o r P s b O 10 0 Vripple = 200mVpp F = 217Hz, G = +6dB Cb = 1 μ F, RL ≥ 8 Ω Tamb = 25°C 0 -10 -20 CMRR (dB) -10 -20 -30 Vcc=3.3V Vcc=2.7V -40 -50 -60 Vcc=5V -40 -50 Vcc=5V Vcc=3.3V Vcc=2.7V -60 -70 -80 -90 -110 -120 0 1 2 3 Common Mode Input Voltage (V) 14/33 -30 RL = 4 Ω G = +6dB Cin = 1 μ F, Cb = 1 μ F Tamb = 25 ° C -100 -70 -80 10000 Figure 37. Crosstalk vs. frequency Crosstalk Level (dB) 20 1000 Frequency (Hz) Figure 36. CMRR vs. common mode input voltage e t e ol 10000 u d o Figure 35. CMRR vs. frequency 0 -10 ) s ( ct 1000 Frequency (Hz) 4 5 100 1000 Frequency (Hz) 10000 TS4998 Electrical characteristics Figure 38. Crosstalk vs. frequency Figure 39. Crosstalk vs. frequency 0 Crosstalk Level (dB) -20 -30 0 RL = 8 Ω G = +6dB Cin = 1 μ F, Cb = 1 μ F Tamb = 25 ° C -10 -20 Crosstalk Level (dB) -10 -40 -50 Vcc=5V Vcc=3.3V Vcc=2.7V -60 -70 -80 -90 -30 -40 -50 -70 -80 -90 -100 -110 -110 100 1000 Vcc=5V Vcc=3.3V Vcc=2.7V -60 -100 -120 RL = 16 Ω G = +6dB Cin = 1 μ F, Cb = 1 μ F Tamb = 25 ° C -120 10000 100 108 106 106 104 102 100 )- A - Weighted filter F = 1kHz G = +6dB, RL = 4 Ω THD + N < 0.5% Tamb = 25 ° C 92 90 2.5 3.0 3.5 4.0 d o r uc t(s 4.5 5.0 Singnal to Noise Ratio (dB) Singnal to Noise Ratio (dB) 110 108 98 u d o Figure 41. SNR vs. power supply voltage 110 94 r P e t e l o 104 s b O 102 100 98 A - weighted filter F = 1kHz G = +6dB ,RL = 8 Ω THD + N < 0.5% Tamb = 25 ° C 96 94 92 90 2.5 5.5 3.0 Supply Voltage (V) 108 P e t e l o 102 100 98 A - Weighted filter F = 1kHz G = +6dB ,RL = 16 Ω THD + N < 0.5% Tamb = 25 ° C 96 94 92 3.0 5.0 5.5 108 104 90 2.5 4.5 110 Singnal to Noise Ratio (dB) Singnal to Noise Ratio (dB) O 4.0 Figure 43. SNR vs. power supply voltage bs 106 3.5 Supply Voltage (V) Figure 42. SNR vs. power supply voltage 110 10000 Frequency (Hz) Figure 40. SNR vs. power supply voltage 96 ) s ( ct 1000 Frequency (Hz) 3.5 4.0 4.5 Supply Voltage (V) 5.0 106 104 102 100 98 Unweighted filter (20Hz to 20kHz) F = 1kHz G = +6dB, RL = 4 Ω THD + N < 0.5% Tamb = 25 ° C 96 94 92 5.5 90 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Supply Voltage (V) 15/33 Electrical characteristics TS4998 Figure 45. SNR vs. power supply voltage 110 110 108 108 106 106 Singnal to Noise Ratio (dB) Singnal to Noise Ratio (dB) Figure 44. SNR vs. power supply voltage 104 102 100 98 Unweighted filter (20Hz to 20kHz) F = 1kHz G = +6dB, RL = 8 Ω THD + N < 0.5% Tamb = 25 ° C 96 94 92 90 2.5 3.0 3.5 4.0 4.5 5.0 104 102 100 98 Unweighted filter (20Hz to 20kHz) F = 1kHz G = +6dB, RL = 16 Ω THD + N < 0.5% Tamb = 25 ° C 96 94 92 90 2.5 5.5 3.0 3.5 Supply Voltage (V) s b O ) (s 0.1 ct 0.01 u d o 2 3 |Voo| (mV) |Voo| (mV) e t e ol 10 1 4 1 0.1 0.01 5 r P e 1E-3 0.0 0.5 Common Mode Input Voltage (V) let 2.0 2.5 3.0 No load Tamb = 25 ° C Current Consumption (mA) 7 10 |Voo| (mV) 1.5 Figure 49. Current consumption vs. power supply voltage 8 1000 Vcc = 2.7V G = +6dB Tamb = 25 ° C 100 O 1.0 Common Mode Input Voltage (V) Figure 48. Differential DC output voltage vs. common mode input voltage o s b 5.5 o r P 1000 Vcc = 3.3V G = +6dB Tamb = 25 ° C 100 10 1 5.0 Figure 47. Differential DC output voltage vs. common mode input voltage 1000 Vcc = 5V G = +6dB Tamb = 25 ° C 100 0 ) s ( t 4.5 c u d Figure 46. Differential DC output voltage vs. common mode input voltage 1E-3 4.0 Supply Voltage (V) 1 0.1 0.01 6 5 Both channels active 4 3 2 One channel active 1 1E-3 0.0 0.5 1.0 1.5 2.0 Common Mode Input Voltage (V) 16/33 2.5 0 0 1 2 3 4 Power Supply Voltage (V) 5 TS4998 Electrical characteristics Figure 51. Current consumption vs. standby voltage 8 7 7 6 6 Current Consumption (mA) Current Consumption (mA) Figure 50. Current consumption vs. standby voltage Both channels active 5 4 3 One channel active 2 Vcc = 5V No load Tamb = 25 ° C 1 0 0 1 2 3 4 5 Both channels active 4 3 One channel active 2 Vcc = 3.3V No load Tamb = 25 ° C 0 0.0 5 0.5 1.0 4 3 )- s ( t c One channel active 2 u d o 0.5 Pr 1.0 1.5 Standby Current (nA) Current Consumption (mA) Both channels active Vcc = 2.7V No load Tamb = 25 ° C 2.0 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 2.5 0 1 Figure 54. Frequency response bs Cin=4.7 μ F, Rin=12k Ω Cin=680nF, Rin=12k Ω Cin=4.7 μ F, Rin=24k Ω Cin=330nF, Rin=24k Ω 20 100 1000 Frequency (Hz) 3 4 5 Figure 55. Frequency response Gain (dB) Gain (dB) O 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 2 Power Supply Voltage (V) Standby Voltage (V) e t e ol r P e s b O 0.8 5 3.0 t e l o No load 0.9 Tamb = 25 ° C 6 2.5 Figure 53. Standby current vs. power supply voltage 1.0 0 0.0 2.0 Standby Voltage (V) 7 1 1.5 u d o Standby Voltage (V) Figure 52. Current consumption vs. standby voltage ) s ( ct 1 Vcc = 5V Po = 700mW ZL = 8 Ω + 500pF Tamb = 25 ° C 10000 20k 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Cin=4.7 μ F, Rin=12k Ω Cin=680nF, Rin=12k Ω Cin=4.7 μ F, Rin=24k Ω Cin=330nF, Rin=24k Ω 20 100 1000 Vcc = 3.3V Po = 300mW ZL = 8 Ω + 500pF Tamb = 25 ° C 10000 20k Frequency (Hz) 17/33 Electrical characteristics TS4998 Figure 56. Frequency response 1800 Cin=4.7 μ F, Rin=12k Ω Vcc=5V 1400 Cin=680nF, Rin=12k Ω Cin=4.7 μ F, Rin=24k Ω Vcc = 2.7V Po = 200mW ZL = 8 Ω + 500pF Tamb = 25 ° C Cin=330nF, Rin=24k Ω 20 100 Vcc=4.5V 1200 Vcc=4V 1000 Vcc=3.3V 800 Vcc=3V 600 400 200 0 10000 20k 1000 Vcc=2.7V 4 8 12 16 RL=4 Ω 1200 1000 )- RL=8 Ω 600 t(s RL=16 Ω 400 uc 200 0 2.5 3.0 od 3.5 4.0 r P e 4.5 RL=32 Ω 5.0 Output power at 10% THD + N (mW) Output power at 1% THD + N (mW) e t e ol 2200 800 28 32 Figure 59. Output power vs. power supply voltage 1800 1400 ) s ( t 24 c u d Figure 58. Output power vs. power supply voltage 1600 20 Load Resistance (Ω ) Frequency (Hz) F = 1kHz Cb = 1 μ F BW < 125 kHz Tamb = 25 ° C THD+N = 1% F = 1kHz Cb = 1 μ F BW < 125kHz Tamb = 25 ° C Vcc=5.5V 1600 Output power (mW) Gain (dB) 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Figure 57. Output power vs. load resistance 2000 1800 F = 1kHz Cb = 1 μ F BW < 125 kHz Tamb = 25 ° C o r P s b O 1600 1400 RL=4 Ω 1200 1000 RL=8 Ω 800 600 RL=16 Ω 400 RL=32 Ω 200 0 2.5 5.5 3.0 3.5 Vcc (V) 4.0 4.5 5.0 5.5 Vcc (V) t e l o Figure 60. Power dissipation vs. output power Figure 61. Power dissipation vs. output power 600 O Power Dissipation (mW) bs 550 500 RL=4 Ω RL=8 Ω RL=16 Ω Vcc = 5V F = 1kHz THD+N < 1% 0 200 400 600 800 1000 1200 1400 1600 Output Power (mW) 18/33 Power Dissipation (mW) 1500 1400 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 RL=4 Ω 450 400 350 RL=8 Ω 300 250 200 RL=16 Ω 150 Vcc = 3.3V F = 1kHz THD+N < 1% 100 50 0 0 100 200 300 400 500 Output Power (mW) 600 700 TS4998 Electrical characteristics Figure 62. Power dissipation vs. output power Figure 63. Power derating curves Power Dissipation (mW) 350 RL=4 Ω 300 250 RL=8 Ω 200 150 RL=16 Ω 100 Vcc = 2.7V F = 1kHz THD+N < 1% 50 0 0 50 100 150 200 250 300 350 400 450 QFN16 Package Power Dissipation (W) 400 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Mounted on 4-layer PCB with vias Mounted on 2-layer PCB with vias No Heat sink -AMR value 0 25 50 75 ) s ( t 100 Ambiant Temperature (° C) 125 150 c u d Output Power (mW) e t e ol ) (s o r P s b O t c u d o r P e t e l o s b O 19/33 Application information TS4998 4 Application information 4.1 General description The TS4998 integrates two monolithic full-differential input/output power amplifiers with two selectable standby pins dedicated for each channel. The gain of each channel is set by external input resistors. 4.2 Differential configuration principle The TS4998 also includes a common mode feedback loop that controls the output bias value to average it at VCC/2 for any DC common mode input voltage. This allows maximum output voltage swing, and therefore, to maximize the output power. Moreover, as the load is connected differentially instead of single-ended, output power is four times higher for the same power supply voltage. ) s ( ct u d o r P e The advantages of a full-differential amplifier are: ● High PSRR (power supply rejection ratio), ● High common mode noise rejection, ● Virtually no pops&clicks without additional circuitry, giving a faster startup time compared to conventional single-ended input amplifiers, ● Easier interfacing with differential output audio DAC, ● No input coupling capacitors required due to common mode feedback loop. ) (s t e l o s b O In theory, the filtering of the internal bias by an external bypass capacitor is not necessary. However, to reach maximum performance in all tolerance situations, it is recommended to keep this option. t c u The only constraint is that the differential function is directly linked to external resistor mismatching, therefore you must pay particular attention to this mismatching in order to obtain the best performance from the amplifier. d o r Gain t in typical application schematic e l o 4.3 bs O P e A typical differential application is shown in Figure 1 on page 3. The value of the differential gain of each amplifier is dependent on the values of external input resistors RIN1 to RIN4 and of integrated feedback resistors with fixed value. In the flat region of the frequency-response curve (no CIN effect), the differential gain of each channel is expressed by the relation given in Equation 1. Equation 1 AV diff R feed V O+ – V O- = ------------= ----------------------------------------------------- = 50kΩ -------------Diff input+ – Diff inputR IN R IN where RIN = RIN1 = RIN2 = RIN3 = RIN4 expressed in kΩ and Rfeed = 50kΩ (value of internal feedback resistors). 20/33 TS4998 Application information Due to the tolerance on the internal 50kΩ feedback resistors, the differential gain will be in the range (no tolerance on RIN): 40kΩ -------------- ≤A V ≤60kΩ -------------diff R IN R IN The difference of resistance between input resistors of each channel have direct influence on the PSRR, CMRR and other amplifier parameters. In order to reach maximum performance, we recommend matching the input resistors RIN1, RIN2, RIN3, and RIN4 with a maximum tolerance of 1%. Note: For the rest of this section, Avdiff will be called AV to simplify the mathematical expressions. 4.4 Common mode feedback loop limitations ) s ( ct As explained previously, the common mode feedback loop allows the output DC bias voltage to be averaged at VCC/2 for any DC common mode bias input voltage. u d o r P e Due to the VICM limitation of the input stage (see Table 3 on page 4), the common mode feedback loop can fulfil its role only within the defined range. This range depends upon the values of VCC, RIN and Rfeed (AV). To have a good estimation of the VICM value, use the following formula: t e l o Equation 2 s b O V CC × R IN + 2 × V ic × 50kΩ V CC × R IN + 2 × V ic × R feed V ICM = --------------------------------------------------------------------------- = --------------------------------------------------------------------------- ( V ) 2 × ( R IN + R feed ) 2 × ( R IN + 50kΩ) ) (s with VCC in volts, RIN in kΩ and t c u d o r Diff input+ + Diff inputV ic = ------------------------------------------------------2 (V) The result of the calculation must be in the range: P e s b O t e l o GND ≤ V ICM ≤ V CC – 1V Due to the +/-20% tolerance on the 50kΩ feedback resistors Rfeed (no tolerance on RIN), it is also important to check that the VICM remains in this range at the tolerance limits: V CC × R IN + 2 × V ic × 60kΩ V CC × R IN + 2 × V ic × 40kΩ ------------------------------------------------------------------------- ≤V ICM ≤-------------------------------------------------------------------------(V) 2 × ( R IN + 40kΩ) 2 × ( R IN + 60kΩ) If the result of the VICM calculation is not in this range, an input coupling capacitor must be used. Example: VCC = 2.7V, AV = 2, and Vic = 2.2V. With internal resistors Rfeed = 50kΩ, calculated external resistors are RIN = Rfeed/AV = 25kΩ, VCC = 2.7V and Vic = 2.2V, which gives VICM = 1.92V. Taking into account the tolerance on the feedback resistors, with Rfeed = 40kΩ the common mode input voltage is VICM = 1.87V and with Rfeed = 60kΩ, it is VICM = 1.95V. These values are not in range from GND to VCC - 1V = 1.7V, therefore input coupling capacitors are required. Alternatively, you can change the Vic value. 21/33 Application information 4.5 TS4998 Low frequency response The input coupling capacitors block the DC part of the input signal at the amplifier inputs. In the low frequency region, CIN starts to have an effect. CIN and RIN form a first-order high pass filter with a -3dB cut-off frequency. 1 F CL = ----------------------------------------------- ( Hz ) 2 × π × R IN × C IN with RIN expressed in Ω and CIN expressed in F. So, for a desired -3dB cut-off frequency we can calculate CIN: 1 C IN = ------------------------------------------------ ( F ) 2 × π × R IN × F CL ) s ( ct From Figure 64, you can easily establish the CIN value required for a -3 dB cut-off frequency for some typical cases. u d o Figure 64. -3dB lower cut-off frequency vs. input capacitance r P e Low -3dB Cut Off Frequency (Hz) Tamb=25 ° C t e l o s b O 22/33 t e l o 100 ) (s t c u d o r P e Rin=6.2k Ω G~18dB 10 0.1 Rin=12k Ω G~12dB s b O Rin=24k Ω G~6dB 0.2 0.4 Input Capacitor Cin ( μ F) 0.6 0.8 1 TS4998 4.6 Application information Power dissipation and efficiency Assumptions: ● Load voltage and current are sinusoidal (Vout and Iout) ● Supply voltage is a pure DC source (VCC) The output voltage is: V out = V peak sinωt (V) and V out I out = ------------- (A) RL ) s ( ct and V peak 2 P out = --------------------- (W) 2R L u d o r P e Therefore, the average current delivered by the supply voltage is: t e l o Equation 3 s b O V peak I ccAVG = 2 ----------------- (A) πR L ) (s The power delivered by the supply voltage is: t c u Equation 4 d o r Psupply = VCC IccAVG (W) Therefore, the power dissipated by each amplifier is: P e Pdiss = Psupply - Pout (W) t e l o s b O 2 2V CC P diss = ---------------------- P out – P out ( W ) π RL and the maximum value is obtained when: ∂Pdiss --------------------- = 0 ∂P out and its value is: Equation 5 Pdiss max = Note: 2 Vcc2 π2RL (W) This maximum value is only dependent on the power supply voltage and load values. 23/33 Application information TS4998 The efficiency is the ratio between the output power and the power supply: Equation 6 P out πV peak η = ------------------- = -------------------P supply 4Vcc The maximum theoretical value is reached when Vpeak = VCC, so: η = π----- = 78.5% 4 The TS4998 is stereo amplifier so it has two power amplifiers. Each amplifier produces heat due to its power dissipation. Therefore, the maximum die temperature is the sum of each amplifier’s maximum power dissipation. It is calculated as follows: ● Pdiss 1 = Power dissipation of left channel power amplifier ● Pdiss 2 = Power dissipation of right channel power amplifier ● Total Pdiss =Pdiss 1 + Pdiss 2 (W) ) s ( ct u d o r P e In most cases, Pdiss 1 = Pdiss 2, giving: t e l o 4 2V CC TotalP diss = 2 × P diss1 = ---------------------- P out – 2P out ( W ) π RL s b O The maximum die temperature allowable for the TS4998 is 150°C. In case of overheating, a thermal shutdown protection set to 150°C, puts the TS4998 in standby until the temperature of the die is reduced by about 5°C. ) (s To calculate the maximum ambient temperature Tamb allowable, you need to know: t c u ● the power supply voltage value, VCC ● the load resistor value, RL ● the package type, RTHJA d o r Example: VCC=5V, RL=8Ω, RTHJAQFN16=85°C/W (with 2-layer PCB with vias). P e Using the power dissipation formula given in Equation 5, the maximum dissipated power per channel is: t e l o bs O Pdissmax = 633mW And the power dissipated by both channels is: Total Pdissmax = 2 x Pdissmax = 1266mW Tamb is calculated as follows: Equation 7 T amb = 150° C – R TJHA × TotalPdissmax Therefore, the maximum allowable value for Tamb is: Tamb = 150 - 85 x 2 x 1.266=42.4°C If a 4-layer PCB with vias is used, RTHJAQFN16 = 45°C/W and the maximum allowable value for Tamb in this case is: Tamb = 150 - 45 x 2 x 1.266 = 93°C 24/33 TS4998 4.7 Application information Footprint recommendation Footprint soldering pad dimensions are given in Figure 72 on page 30. As discussed in the previous section, the maximum allowable value for ambient temperature is dependent on the thermal resistance junction to ambient RTHJA. Decreasing the RTHJA value causes better power dissipation. Based on best thermal performance, it is recommended to use 4-layer PCBs with vias to effectively remove heat from the device. It is also recommended to use vias for 2-layer PCBs to connect the package exposed pad to heatsink cooper areas placed on another layer. For proper thermal conductivity, the vias must be plated through and solder-filled. Typical thermal vias have the following dimensions: 1.2mm pitch, 0.3mm diameter. ) s ( ct Figure 65. QFN16 footprint recommendation u d o r P e t e l o ) (s s b O t c u d o r 4.8 Decoupling of the circuit P e Two capacitors are needed to correctly bypass the TS4998: a power supply bypass capacitor CS and a bias voltage bypass capacitor Cb. s b O t e l o The CS capacitor has particular influence on the THD+N at high frequencies (above 7kHz) and an indirect influence on power supply disturbances. With a value for CS of 1µF, one can expect THD+N performance similar to that shown in the datasheet. In the high frequency region, if CS is lower than 1µF, then THD+N increases and disturbances on the power supply rail are less filtered. On the other hand, if CS is greater than 1µF, then those disturbances on the power supply rail are more filtered. The Cb capacitor has an influence on the THD+N at lower frequencies, but also impacts PSRR performance (with grounded input and in the lower frequency region). 25/33 Application information 4.9 TS4998 Standby control and wake-up time tWU The TS4998 has two dedicated standby pins (STBYL, STBYR). These pins allow to put each channel in standby mode or active mode independently. The amplifier is designed to reach close to zero pop when switching from one mode to the other. When both channels are in standby (VSTBYL = VSTBYR = GND), the circuit is in shutdown mode. When at least one of the two standby pins is released to put the device ON, the bypass capacitor Cb starts to be charged. Because Cb is directly linked to the bias of the amplifier, the bias will not work properly until the Cb voltage is correct. The time to reach this voltage is called the wake-up time or tWU and is specified in Table 4 on page 5, with Cb=1µF. During the wake-up phase, the TS4998 gain is close to zero. After the wake-up time, the gain is released and set to its nominal value. If Cb has a value different from 1µF, then refer to the graph in Figure 66 to establish the corresponding wake-up time. ) s ( ct When a channel is set to standby mode, the outputs of this channel are in high impedance state. Figure 66. Typical startup time vs. bypass capacitor 100 90 Startup Time (ms) 70 Vcc=2.7V t c u 50 Vcc=5V 40 30 0.0 t e l o s b O 4.10 ) (s 60 od r P e s b O Vcc=3.3V r P e t e l o Tamb=25 ° C 80 u d o 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Bypass Capacitor Cb (μ F) 4.0 4.5 Shutdown time When the standby command is activated (both channels put into standby mode), the time required to put the two output stages of each channel in high impedance and the internal circuitry in shutdown mode is a few microseconds. Note: In shutdown mode when both channels are in standby, the Bypass pin and LIN+, LIN-, RIN+, RIN- pins are shorted to ground by internal switches. This allows a quick discharge of Cb and CIN capacitors. 4.11 Pop performance Due to its fully differential structure, the pop performance of the TS4998 is close to perfect. However, due to mismatching between internal resistors Rfeed, external resistors RIN and 26/33 TS4998 Application information external input capacitors CIN, some noise might remain at startup. To eliminate the effect of mismatched components, the TS4998 includes pop reduction circuitry. With this circuitry, the TS4998 is close to zero pop for all possible common applications. In addition, when the TS4998 is in standby mode, due to the high impedance output stage in this configuration, no pop is heard. 4.12 Single-ended input configuration It is possible to use the TS4998 in a single-ended input configuration. However, input coupling capacitors are needed in this configuration. The schematic diagram in Figure 67 shows an example of this configuration for a gain of +6dB set by the input resistors. ) s ( ct Figure 67. Typical single-ended input application VCC u d o Cs Pr 1uF 13 e t e ol U1 Cin1 Rin1 330nF 25k Cin2 Rin2 TS4998 Vcc P1 25k Cin3 Rin3 4 RIN- 3 RIN+ 25k - LOUT- 12 + LOUT+ 11 - ROUT- 9 + ROUT+ 10 Left Speaker 8 Ohms Right Speaker RIGHT 8 Ohms Rin4 25k s b O GND 1uF Cb STBY GND STBYR BIAS 7 Bypass TS4998 - QFN16 STBYR Control t e l o 14 STBYL P e 330nF -O LEFT 8 d o r Cin4 LIN+ ) s ( t uc 330nF 2 bs STBYL Control P2 LIN- 5 Diff. input R- 330nF 1 6 Diff. input L- The component calculations remain the same for the gain. In single-ended input configuration, the formula is: V O+ – V OR feed 50kΩAv SE = -------------------------- = ------------- = ------------Ve R IN R IN with RIN expressed in kΩ. 27/33 Application information 4.13 TS4998 Notes on PSRR measurement What is the PSRR? The PSRR is the power supply rejection ratio. The PSRR of a device is the ratio between a power supply disturbance and the result on the output. In other words, the PSRR is the ability of a device to minimize the impact of power supply disturbance to the output. How is the PSRR measured? The PSRR is measured as shown in Figure 68. Figure 68. PSRR measurement ) s ( ct Vripple du 13 Vcc U1 Rin1 TS4998 Vcc e t e ol 4.7uF 1 LI N- 2 LI N+ 4 RIN- Rin2 LEFT bs 4.7uF Rin3 ) s ( t 4.7uF 3 s b O LOUT- 12 + LOUT+ 11 - ROUT- 9 + ROUT+ 10 RL 8Ohms RL 8Ohms GND 1uF Cb STBY GND STBYR BIAS 7 Bypass STBYL o r P 14 TS4998 - QFN16 STBYR Control e t e ol - Rin4 c u d 4.7uF o r P RIGHT RIN+ STBYL Control Cin4 -O 5 Cin3 6 Cin2 8 Cin1 Principles of operation ● The DC voltage supply (VCC) is fixed ● The AC sinusoidal ripple voltage (Vripple) is fixed ● No bypass capacitor CS is used The PSRR value for each frequency is calculated as: RMS ( Output ) PSRR = 20 × Log --------------------------------- ( dB ) RMS ( Vripple ) RMS is an rms selective measurement. 28/33 TS4998 5 QFN16 package information QFN16 package information In order to meet environmental requirements, STMicroelectronics offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an STMicroelectronics trademark. ECOPACK specifications are available at: www.st.com. Figure 69. QFN16 package ) s ( ct u d o r P e t e l o s b O Figure 70. QFN16 pinout (top view) ) (s t c u d o r P e t e l o s b O 29/33 QFN16 package information TS4998 Figure 71. QFN16 4x4mm package mechanical data Dimensions Millimeters (mm) Ref Min Typ Max 0.8 0.9 1.0 A1 0.02 0.05 A3 0.20 A * * The Exposed Pad is connected to Ground. )- s ( t c b O 0.18 0.25 0.30 D 3.85 4.0 4.15 D2 2.1 E 3.85 E2 2.1 ) s ( ct u d o 4.0 r P e let so b e 2.6 4.15 2.6 0.65 K 0.2 L 0.30 r 0.11 0.40 0.50 Figure 72. QFN16 footprint soldering pad ro du P e t e l o s b O 30/33 Footprint data Ref mm A 4.2 B 4.2 C 0.65 D 0.35 E 0.65 F 2.70 TS4998 6 Ordering information Ordering information Table 8. Order codes Order code TS4998IQT Temperature range Package Packaging Marking -40°C to +85°C QFN16 4x4mm Tape & reel K998 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 31/33 Revision history 7 TS4998 Revision history Table 9. Document revision history Date Revision 20-Dec-2007 1 Changes Initial release. ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 32/33 s b O TS4998 ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. r P e All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. t e l o No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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