TS512IA

TS512,A HIGH SPEED PRECISION DUAL OPERATIONAL AMPLIFIERS . . . . . . . . LOW OFFSET VOLTAGE : 500µV max. LOW POWER CONSUMPTION SHORT CIRCUIT PROTECTION LOW DISTORTION, LOW NOISE HIGH GAIN-BANDWIDTH PRODUCT HIGH CHANNEL SEPARATION ESD INTERNAL PROTECTION MACROMODEL INCLUDED IN THIS SPECIFICATION DESCRIPTION The TS512 is a high performance dual operational amplifier with frequency and phase compensation built intothe chip. The internal phasecompensation allows stable operation as voltage follower in spite of its high gain-bandwidth products. The circuit presents very stable electrical characteristics over the entire supply voltage range, and is particularlyintended for professional and telecom applications (active filter, etc). PIN CONNECTIONS (top view) N DIP8 (Plastic Package) D SO8 (Plastic Micropackage) ORDER CODES Part Number TS512I TS512AI Temperature Range -40, +125oC -40, +125 C o Package N • • D • • Output 1 1 Inve rting Input 1 2 Non-inve rting Input 1 3 VCC - 4 8 V+ CC + 7 Output Inve rting Input 2 Non-inve rting Input 2 + 6 5 March 1998 TS512,A SCHEMATIC DIAGRAM (1/2 TS512) Inverting input Non-inverting input 8 D7 D6 R1 R2 R3 R4 Q13 Q1 Q2 Q4 Q3 D1 Q5 Q6 R5 Q7 Q8 Q10 Q11 Q12 Q9 D2 R7 Q 18 R6 Q 14 O utput Q17 Q19 C1 Q15 Q 16 D3 Q 21 D5 Q22 C2 D4 R8 R9 Q23 Q20 R10 4 ABSOLUTE MAXIMUM RATINGS Symbol VCC Vi Vid Toper Ptot Tj Tstg Supply Voltage Input Voltage Differential Input Voltage Operating Free Air Temperature Range Power Dissipation at Tamb = 70 C Junction Temperature Storage Temperature Range o Parameter Value ±18 ±VCC ± (VCC - 1) -40 to +125 500 150 -65 to +150 Unit V o C C C mW o o 2/7 TS512,A ELECTRICAL CHARACTERISTICS (VCC = ±15V, Tamb = 25oC, unless otherwise specified) Symbol ICC Iib Ri Vio Parameter Supply Current Input Bias Current Tmin. < Top < Tmax. Input Resistance Input Offset Voltage Tmin. < Top < Tmax. DV io Iio DIio Ios Avd GBP en Input Offset Voltage Drift Input Offset Current Tmin. < Top < Tmax. Input Offset Current Drift Output Short Circuit Current Large Signal Voltage Gain Gain-bandwidth Product Equivalent Input Noise Voltage RL = 2kΩ f = 100kHz f = 1kHz Rs = 50Ω Rs = 1kΩ Rs = 10kΩ AV = 20dB VO = 2VPP RL = 2kΩ RL = 10kΩ Unity Gain, R L = 2kΩ Vic = 10V Vic = 1V f = 1kHz f = 100Hz RL = 2kΩ f = 1kHz VCC = ±15V VCC = ±4V f = 10kHz 0.8 90 90 100 120 ±13 VCC = ±15V VCC = ±4V 90 1.8 Tmin. < Top < Tmax. 0.08 23 100 95 3 8 10 18 0.03 ±3 28 1.5 15 Tmin. < Top < Tmax. f = 1kHz TS512 TS512A TS512 TS512A 2 5 20 40 1 0.5 2.5 0.5 3.5 1.5 Test Conditions Min. Typ. 0.7 50 Max. 1.2 150 300 Unit mA nA nA MΩ mV mV µV/ C nA nA nA o °C mA dB MHz nV  Hz √ % V VPP V/µs dB dB dB THD ± Vopp Vopp SR CMR SVR VO1/VO2 Total Harmonic Distortion Output Voltage Swing Large Signal Voltage Swing Slew Rate Common Mode Rejection Ratio Supply Voltage Rejection Ratio Channel Separation 0.1 3/7 TS512,A . . . LOW OFFSET VOLTAGE : 500µV max. LOW POWER CONSUMPTION SHORT CIRCUIT PROTECTION . . . LOW DISTORTION, LOW NOISE HIGH GAIN-BANDWIDTH PRODUCT HIGH CHANNEL SEPARATION Applies to : TS512I,AI ** Standard Linear Ics Macromodels, 1993. ** CONNECTIONS : * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIV E POWER SUPPLY * 5 NEGATIVE POWER SUPPLY .SUBCKT TS512 1 3 2 4 5 (analog) ************************************* ********************* .MODEL MDTH D IS=1E-8 KF=6.565195E-17 CJO=10F * INPUT STAGE CIP 2 5 1.000000E-12 CIN 1 5 1.000000E-12 EIP 10 5 2 5 1 EIN 16 5 1 5 1 RIP 10 11 2.600000E+01 RIN 15 16 2.600000E+01 RIS 11 15 1.061852E+02 DIP 11 12 MDTH 400E-12 DIN 15 14 MDTH 400E-12 VOFP 12 13 DC 0 VOFN 13 14 DC 0 IPOL 13 5 1.000000E-05 CPS 11 15 12.47E-10 DINN 17 13 MDTH 400E-12 VIN 17 5 1.500000e+00 DINR 15 18 MDTH 400E-12 VIP 4 18 1.500000E+00 FCP 4 5 VOFP 3.400000E+01 FCN 5 4 VOFN 3.400000E+01 FIBP 2 5 VOFN 1.000000E-02 FIBN 5 1 VOFP 1.000000E-02 * AMPLIFYING STAGE FIP 5 19 VOFP 9.000000E+02 FIN 5 19 VOFN 9.000000E+02 RG1 19 5 1.727221E+06 RG2 19 4 1.727221E+06 CC 19 5 6.000000E-09 DOPM 19 22 MDTH 400E-12 DONM 21 19 MDTH 400E-12 HOPM 22 28 VOUT 6.521739E+03 VIPM 28 4 1.500000E+02 HONM 21 27 VOUT 6.521739E+03 VINM 5 27 1.500000E+02 GCOMP 5 4 4 5 6.485084E-04 RPM1 5 80 1E+06 RPM2 4 80 1E+06 GAVPH 5 82 19 80 2.59E-03 RAVPHGH 82 4 771 RAVPHGB 82 5 771 RAVPHDH 82 83 1000 RAVPHDB 82 84 1000 CAVPHH 4 83 0.331E-09 CAVPHB 5 84 0.331E-09 EOUT 26 23 82 5 1 VOUT 23 5 0 ROUT 26 3 6.498455E+01 COUT 3 5 1.000000E-12 DOP 19 25 MDTH 400E-12 VOP 4 25 1.742230E+00 DON 24 19 MDTH 400E-12 VON 24 5 1.742230E+00 .ENDS 4/7 TS512,A ELECTRICAL CHARACTERISTICS VCC = ±15V, Tamb = 25oC (unless otherwise specified) Symbol Vio Avd ICC Vicm VOH VOL Isink Isource GBP SR ∅m R L = 2kΩ R L = 2kΩ VO = 0V VO = 0V R L = 2kΩ, C L = 100pF R L = 2kΩ R L = 2kΩ, C L = 100pF R L = 2kΩ No load, per operator Conditions Value 0 100 350 -13.5 to 13.5 +13 -13 23 23 3 1.4 55 Unit mV V/mV µA V V V mA mA MHz V/ms Degrees 5/7 TS512,A PACKAGE MECHANICAL DATA 8 PINS - PLASTIC DIP Dim. A a1 B b b1 D E e e3 e4 F i L Z Millimeters Min. 0.51 1.15 0.356 0.204 7.95 2.54 7.62 7.62 6.6 5.08 3.18 3.81 1.52 0.125 1.65 0.55 0.304 10.92 9.75 0.313 Typ. 3.32 0.020 0.045 0.014 0.008 Max. Min. Inches Typ. 0.131 0.065 0.022 0.012 0.430 0.384 0.100 0.300 0.300 0260 0.200 0.150 0.060 Max. 6/7 TS512,A PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICROPACKAGE (SO) Dim. A a1 a2 a3 b b1 C c1 D E e e3 F L M S Min. 0.1 0.65 0.35 0.19 0.25 4.8 5.8 Millimeters Typ. Max. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 5.0 6.2 o Min. 0.004 0.026 0.014 0.007 0.010 0.189 0.228 Inches Typ. Max. 0.069 0.010 0.065 0.033 0.019 0.010 0.020 0.197 0.244 1.27 3.81 3.8 0.4 4.0 1.27 0.6 8 (max.) o 0.050 0.150 0.150 0.016 0.157 0.050 0.024 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without noti ce. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1998 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7