TS512IN

TS512,A PRECISION DUAL OPERATIONAL AMPLIFIER ■ LOW INPUT OFFSET VOLTAGE: ■ ■ ■ ■ ■ ■ ■ 500µV max. LOW POWER CONSUMPTION SHORT CIRCUIT PROTECTION LOW DISTORTION, LOW NOISE HIGH GAIN-BANDWIDTH PRODUCT: 3MHz HIGH CHANNEL SEPARATION ESD INTERNAL PROTECTION LOW INPUT OFFSER CURRENT N DIP8 (Plastic Package) ■ MACROMODEL INCLUDED IN THIS SPECIFICATION D SO8 (Plastic Micropackage) DESCRIPTION The TS512 is a high performance dual operational amplifier with frequency and phase compensation built into the chip. The internal phase compensation allows stable operation as voltage follower in spite of its high gain-bandwidth products. The circuit presents very stable electrical characteristics over the entire supply voltage range, and is particularly intended for professional and telecom applications (active filter, etc). ORDER CODE Package Part Number Temperature Range TS512I TS512AI -40°C, +125°C -40°C, +125°C N D • • • • N = Dual in Line Package (DIP) D = Small Outline Package (SO) - also available in Tape & Reel (DT) PIN CONNECTIONS (top view) 8 VCC + 7 Output - 6 Inverting Input 2 + 5 Non-inverting Input 2 Output 1 1 Inverting Input 1 2 - Non-inverting Input 1 3 + VCC - 4 November 2001 1/6 TS512, A SCHEMATIC DIAGRAM (1/2 TS512) VCC R16 4kΩ R5 4kΩ R2 2kΩ R1 2kΩ R6 4kΩ Q25 R11 1kΩ R18 2kΩ Q13 Q11 Q14 Q35 Q12 Q2 R12 812Ω Q3 Q29 Q27 Q21 R13 27Ω Q37 Q36 Non-inverting Input Inverting Input Output Q38 Q15 R17 4kΩ R14 27Ω Q22 Q5 Q28 C2 23pF Q30 Q7 Q31 Q4 Q6 R15 150kΩ Q8 Q9 Q32 Q18 Q10 R4 1.2kΩ Q19 Q23 R8 150kΩ C1 43pF R3 60kΩ Q20 Q17 R7 15kΩ Q33 R9 15kΩ Q34 R10 45kΩ VCC ABSOLUTE MAXIMUM RATINGS Symbol VCC Input Voltage Vid Differential Input Voltage ptot Tj Tstg 2/6 Supply Voltage Vi Toper 1. Parameter Unit ±18 V ±VCC ±(VCC - 1) Operating Free-Air Temperature Range Power Dissipation at Tamb = 70°C Value 1) Junction Temperature Storage Temperature Range Power dissipation must be considered to ensure maximum junction temperature (Tj) is not exceeded. -40 to +125 °C 500 mW + 150 °C -65 to +150 °C TS512, A ELECTRICAL CHARACTERISTICS VCC = ±15V, Tamb = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Icc Supply Current 0.7 1.2 mA Iib Input Bias Current Tmin ≤ Top ≤ Tmax 50 150 300 nA Ri Input Resistance, f = 1kHz 1 MΩ Input Offset Voltage TS512 TS512A Vio Tmin ≤ Top ≤ Tmax ∆Vio Input Offset Current Tmin ≤ Top ≤ Tmax ∆Iio Input Offset Current Drift Tmin ≤ Top ≤ Tmax Ios Output Short Circuit Current Avd Large Signal Voltage Gain RL = 2kΩ en THD ±Vopp Vopp SR CMR SVR Vo1/Vo2 TS512 TS512A 5 Vcc = ±15V Vcc = ± 4V Large Signal Voltage Swing RL = 10kΩ 23 mA 90 100 95 dB 1.8 3 MHz 8 10 18 nV -----------Hz 0.03 % Channel Separation, ±13 V ±3 28 0.8 1.5 90 f = 1kHz Vpp V/µs dB 90 Supply Voltage Rejection Ratio nA nA ------°C f = 10kHz Slew Rate Unity Gain, RL = 2kΩ Common Mode Rejection Ratio Vic = ±10V 20 40 0.08 Equivalent Input Noise Voltage, f = 1kHz Rs = 50Ω Rs = 1kΩ Rs = 10kΩ Total Harmonic Distortion RL = 2kΩ Av = 20dB f = 1kHz Vo = 2Vpp Vcc = ±15V Vcc = ± 4V mv µV/°C 2 Gain-bandwidth Product, f = 100kHz Output Voltage Swing RL = 2kΩ 2.5 0.5 3.5 1.5 Input Offset Voltage Drift Tmin ≤ Top ≤ Tmax Iio GBP 0.5 dB 120 dB 3/6 TS512, A MACROMODEL ** Standard Linear Ics Macromodels, 1993. ** CONNECTIONS : * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIVE POWER SUPPLY * 5 NEGATIVE POWER SUPPLY .SUBCKT TS512 1 3 2 4 5 (analog) ******************************************************** .MODEL MDTH D IS=1E-8 KF=6.565195E-17 CJO=10F * INPUT STAGE CIP 2 5 1.000000E-12 CIN 1 5 1.000000E-12 EIP 10 5 2 5 1 EIN 16 5 1 5 1 RIP 10 11 2.600000E+01 RIN 15 16 2.600000E+01 RIS 11 15 1.061852E+02 DIP 11 12 MDTH 400E-12 DIN 15 14 MDTH 400E-12 VOFP 12 13 DC 0 VOFN 13 14 DC 0 IPOL 13 5 1.000000E-05 CPS 11 15 12.47E-10 DINN 17 13 MDTH 400E-12 VIN 17 5 1.500000e+00 DINR 15 18 MDTH 400E-12 VIP 4 18 1.500000E+00 FCP 4 5 VOFP 3.400000E+01 FCN 5 4 VOFN 3.400000E+01 FIBP 2 5 VOFN 1.000000E-02 FIBN 5 1 VOFP 1.000000E-02 * AMPLIFYING STAGE FIP 5 19 VOFP 9.000000E+02 FIN 5 19 VOFN 9.000000E+02 RG1 19 5 1.727221E+06 RG2 19 4 1.727221E+06 CC 19 5 6.000000E-09 DOPM 19 22 MDTH 400E-12 DONM 21 19 MDTH 400E-12 HOPM 22 28 VOUT 6.521739E+03 VIPM 28 4 1.500000E+02 HONM 21 27 VOUT 6.521739E+03 VINM 5 27 1.500000E+02 GCOMP 5 4 4 5 6.485084E-04 RPM1 5 80 1E+06 RPM2 4 80 1E+06 GAVPH 5 82 19 80 2.59E-03 RAVPHGH 82 4 771 RAVPHGB 82 5 771 RAVPHDH 82 83 1000 RAVPHDB 82 84 1000 CAVPHH 4 83 0.331E-09 CAVPHB 5 84 0.331E-09 EOUT 26 23 82 5 1 VOUT 23 5 0 ROUT 26 3 6.498455E+01 COUT 3 5 1.000000E-12 DOP 19 25 MDTH 400E-12 VOP 4 25 1.742230E+00 DON 24 19 MDTH 400E-12 VON 24 5 1.742230E+00 .ENDS ELECTRICAL CHARACTERISTICS Vcc = ±15V, Tamb = 25°C (unless otherwise specified) Symbol Conditions Vio Value Unit 0 mV Avd RL = 2kΩ 100 V/mV Icc No load, per operator 350 µA Vicm -13.5 to 13.5 V VOH RL = 2kΩ +13 V VOL RL = 2kΩ -13 V Isink Vo = 0V 23 mA Isource Vo = 0V 23 mA GBP RL = 2kΩ, CL = 100pF 3 MHz 4/6 SR RL = 2kΩ 1.4 V/µs ∅m RL = 2kΩ, CL = 100pF 55 Degrees TS512, A PACKAGE MECHANICAL DATA 8 PINS - PLASTIC DIP Millimeters Inches Dim. Min. A a1 B b b1 D E e e3 e4 F i L Z Typ. Max. Min. 3.32 0.51 1.15 0.356 0.204 1.65 0.55 0.304 10.92 9.75 7.95 0.020 0.045 0.014 0.008 Max. 0.065 0.022 0.012 0.430 0.384 0.313 2.54 7.62 7.62 3.18 Typ. 0.131 0.100 0.300 0.300 6.6 5.08 3.81 1.52 0.125 0260 0.200 0.150 0.060 5/6 TS512, A PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICROPACKAGE (SO) s b1 b a1 A a2 C c1 a3 L E e3 D M 5 1 4 F 8 Millimeters Inches Dim. Min. A a1 a2 a3 b b1 C c1 D E e e3 F L M S Typ. Max. 0.65 0.35 0.19 0.25 1.75 0.25 1.65 0.85 0.48 0.25 0.5 4.8 5.8 5.0 6.2 0.1 Min. Typ. Max. 0.026 0.014 0.007 0.010 0.069 0.010 0.065 0.033 0.019 0.010 0.020 0.189 0.228 0.197 0.244 0.004 45° (typ.) 1.27 3.81 3.8 0.4 0.050 0.150 4.0 1.27 0.6 0.150 0.016 0.157 0.050 0.024 8° (max.) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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