TS514ID

TS514ID

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOIC-14

  • 描述:

    IC OPAMP GP 4 CIRCUIT 14SO

  • 详情介绍
  • 数据手册
  • 价格&库存
TS514ID 数据手册
TS514,A HIGH SPEED PRECISION QUAD OPERATIONAL AMPLIFIERS . . . . . . . . LOW OFFSET VOLTAGE : 500µV max. LOW POWER CONSUMPTION SHORT CIRCUIT PROTECTION LOW DISTORTION, LOW NOISE HIGH GAIN-BANDWIDTH PRODUCT HIGH CHANNEL SEPARATION ESD INTERNAL PROTECTION MACROMODEL INCLUDED IN THIS SPECIFICATION DESCRIPTION The TS514 is a high performance quad operational amplifier with frequency and phase compensation built intothe chip. The internal phasecompensation allows stable operation as voltage follower in spite of its high gain-bandwidth products. The circuit presents very stable electrical characteristics over the entire supply voltage range, and it particularly intended for professional and telecom applications (active filters, etc). PIN CONNECTIONS (top view) N DIP14 (Plastic Package) D SO14 (Plastic Micropackage) ORDER CODES Part Number TS514I TS514AI Temperature Range -40oC, +125oC -40 C, +125 C o o Package N • • D • • Output 1 Inve rting Input 1 Non-inve rting Input 1 V CC + Non-inve rting Input 2 Inve rting Input 2 Output 2 1 2 3 4 5 6 7 + + + + 14 Output 4 13 Inverting Input 4 12 Non-inverting Input 4 11 VC C 10 Non-inverting Input 3 9 8 Inverting Input 3 Output 3 December 1997 1/7 TS514,A SCHEMATIC DIAGRAM (1/2 TS514) Inverting input Non-inverting input 8 D7 D6 R1 R2 R3 R4 Q13 Q1 Q2 Q4 Q3 D1 Q5 Q6 R5 Q7 Q8 Q10 Q11 Q12 Q9 D2 R7 Q 18 R6 Q 14 O utput Q17 Q19 C1 Q15 Q 16 D3 Q 21 D5 Q22 C2 D4 R8 R9 Q23 Q20 R10 4 ABSOLUTE MAXIMUM RATINGS Symbol VCC Vi Vid Toper Ptot Tstg Supply Voltage Input Voltage (positive) (negative) Parameter Value ±18 +VCC -VCC - 0.5 ± (VCC - 1) -40 to +125 o o Unit V V Differential Input Voltage Operating Temperature Range Power Dissipation at Tamb = 70 C Storage Temperature C C 400 -65 to 150 mW o 2/7 TS514,A ELECTRICAL CHARACTERISTICS (VCC = ±15V, Tamb = 25oC, unless otherwise specified) Symbol ICC Iib Ri Vio Parameter Supply Current Input Bias Current Tmin. < Top < Tmax. Input Resistance Input Offset Voltage f = 1kHz TS514 TS514A Tmin. < Top < Tmax. DV io Iio DIio Ios Avd GBP en Input Offset Voltage Drift Input Offset Current Tmin. < Top < Tmax. Input Offset Current Drift Output Short Circuit Current Large Signal Voltage Gain Gain-bandwidth Product Equivalent Input Noise Voltage RL = 2kΩ f = 100kHz f = 1kHz Rs = 50Ω Rs = 1kΩ Rs = 10kΩ AV = 20dB VO = 2VPP RL = 2kΩ RL = 10kΩ Vic = 10V Vic = 1V f = 1kHz f = 100Hz RL = 2kΩ f = 1kHz VCC = ±15V VCC = ±4V f = 10kHz 0.8 90 90 100 120 ±13 VCC = ±15V VCC = ±4V 90 1.8 Tmin. < Top < Tmax. 0.08 23 100 95 3 8 10 18 0.03 ±3 28 1.5 15 Tmin. < Top < Tmax. TS514 TS514A 5 5 20 40 1 0.5 2.5 0.5 4 1.5 Test Conditions Min. Typ. 1.4 50 Max. 2.4 150 300 Unit mA nA nA MΩ mV mV µV/ C nA nA nA °C mA dB MHz nV  Hz √ % V VPP V/µs dB dB dB o THD ± Vopp Vopp SR CMR SVR VO1/VO2 Total Harmonic Distortion Output Voltage Swing Large Signal Voltage Swing Slew Rate Common Mode Rejection Ratio Supply Voltage Rejection Ratio Channel Separation 0.1 Unity Gain, R L = 2kΩ 3/7 TS514,A . . . SINGLE OR SPLIT SUPPLY OPERATION LOW POWER CONSUMPTION SHORT CIRCUIT PROTECTION . . . LOW DISTORTION, LOW NOISE HIGH GAIN-BANDWIDTH PRODUCT HIGH CHANNEL SEPARATION Applies to : TS514i,AI ** Standard Linear Ics Macromodels, 1993. ** CONNECTIONS : * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIV E POWER SUPPLY * 5 NEGATIVE POWER SUPPLY .SUBCKT TS514 1 3 2 4 5 (analog) ************************************* ********************* .MODEL MDTH D IS=1E-8 KF=6.647807E-16 CJO=10F * INPUT STAGE CIP 2 5 1.000000E-12 CIN 1 5 1.000000E-12 EIP 10 5 2 5 1 EIN 16 5 1 5 1 RIP 10 11 1.300000E+01 RIN 15 16 1.300000E+01 RIS 11 15 6.437882E+01 DIP 11 12 MDTH 400E-12 DIN 15 14 MDTH 400E-12 VOFP 12 13 DC 0 VOFN 13 14 DC 0 IPOL 13 5 2.000000E-05 CPS 11 15 9.75E-10 DINN 17 13 MDTH 400E-12 VIN 17 5 0.000000e+00 DINR 15 18 MDTH 400E-12 VIP 4 18 1.500000E+00 FCP 4 5 VOFP 1.525000E+01 FCN 5 4 VOFN 1.525000E+01 FIBP 2 5 VOFN 5.000000E-03 FIBN 5 1 VOFP 5.000000E-03 * AMPLIFYING STAGE FIP 5 19 VOFP 1.125000E+03 FIN 5 19 VOFN 1.125000E+03 RG1 19 5 6.512062E+05 RG2 19 4 6.512062E+05 CC 19 29 1.500000E-08 HZTP 30 29 VOFP 8.944787E+02 HZTN 5 30 VOFN 8.944787E+02 DOPM 19 22 MDTH 400E-12 DONM 21 19 MDTH 400E-12 HOPM 22 28 VOUT 6.521739E+03 VIPM 28 4 1.500000E+02 HONM 21 27 VOUT 6.521739E+03 VINM 5 27 1.500000E+02 GCOMP 5 4 4 5 7.485029E-04 RPM1 5 80 1E+09 RPM2 4 80 1E+09 GAVPH 5 82 19 80 2.99E-03 RAVPHGH 82 4 668 RAVPHGB 82 5 668 RAVPHDH 82 83 1000 RAVPHDB 82 84 1000 CAVPHH 4 83 0.352E-09 CAVPHB 5 84 0.352E-09 EOUT 26 23 82 5 1 VOUT 23 5 0 ROUT 26 3 150 COUT 3 5 1.000000E-12 DOP 19 25 MDTH 400E-12 VOP 4 25 1.785252E+00 DON 24 19 MDTH 400E-12 VON 24 5 1.785252E+00 .ENDS 4/7 TS514,A ELECTRICAL CHARACTERISTICS VCC = ±15V, Tamb = 25oC (unless otherwise specified) Symbol Vio Avd ICC Vicm VOH VOL Isink Isource GBP SR _ ∅m R L = 2kΩ R L = 2kΩ VO = 0V VO = 0V R L = 2kΩ, C L = 100pF R L = 2kΩ, C L = 100pF R L = 2kΩ, C L = 100pF R L = 2kΩ No load, per operator Conditions Value 0 94 325 -15 to 13.5 +13 -13 24 24 3 1.4 55 Unit mV V/mV µA V V V mA mA MHz V/µs Degrees 5/7 TS514,A PACKAGE MECHANICAL DATA 14 PINS - PLASTIC DIP Dim. a1 B b b1 D E e e3 F i L Z Millimeters Min. 0.51 1.39 0.5 0.25 20 8.5 2.54 15.24 7.1 5.1 3.3 1.27 2.54 0.050 1.65 Typ. Max. Min. 0.020 0.055 Inches Typ. Max. 0.065 0.020 0.010 0.787 0.335 0.100 0.600 0.280 0.201 0.130 0.100 6/7 TS514,A PACKAGE MECHANICAL DATA 14 PINS - PLASTIC MICROPACKAGE (SO) Dim. A a1 a2 b b1 C c1 D E e e3 F G L M S Min. 0.1 0.35 0.19 Millimeters Typ. Max. 1.75 0.2 1.6 0.46 0.25 45o (typ.) Min. 0.004 0.014 0.007 Inches Typ. Max. 0.069 0.008 0.063 0.018 0.010 0.5 8.55 5.8 1.27 7.62 3.8 4.6 0.5 4.0 5.3 1.27 0.68 8 (max.) o 0.020 8.75 6.2 0.336 0.228 0.050 0.300 0.150 0.181 0.020 0.157 0.208 0.050 0.027 0.334 0.244 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without noti ce. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1997 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7
TS514ID
物料型号: - TS514I:温度范围为-40°C至+125°C。 - TS514AI:温度范围为-40°C至+125°C。

器件简介: TS514是一款高性能四运算放大器,具有频率和相位补偿功能。内部相位补偿允许在高增益带宽产品的情况下稳定运行为电压跟随器。该电路在整個供电电压范围内呈现非常稳定的电气特性,特别适用于专业和电信应用(如主动滤波器等)。

引脚分配: - 1:反相输入 - 2:非反相输入 - 3:输出 - 4:正电源 - 5:负电源

参数特性: - 供电电流(Icc):1.4mA至2.4mA - 输入偏置电流(Ib):50nA至150nA - 输入电阻(Ri):1MΩ - 输入偏置电压(Vio):0.5mV至2mV - 输入偏置电压漂移(DVio):5μV/°C - 输出短路电流(los):23mA - 大信号电压增益(Av):90dB至100dB - 增益带宽积(GBP):1.8MHz至3MHz - 等效输入噪声电压(en):8nV至18nV - 总谐波失真(THD):0.03%至0.1% - 输出电压摆动(Vopp):±13V至±3V - 压摆率(SR):0.8V/s至1.5V/s - 共模抑制比(CMR):90dB - 电源抑制比(SVR):90dB - 通道分离(Vo1/Vo2):100dB至120dB

功能详解: TS514具有低偏置电压、低功耗、短路保护、低失真、低噪声和高增益带宽积等特点。适用于高速应用,如电信和专业音频设备。

应用信息: 适用于专业和电信应用,如主动滤波器等。

封装信息: - DIP14(塑料封装) - SO14(塑料微型封装)
TS514ID 价格&库存

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