TS617
Dual wideband high output current operational amplifier
Features
■
Wideband of 200 MHz/gain = 4
■
Very high slew rate
■
High output current
■
Specified on 25 and 100-Ω loads
-IN1 1
_
14 OUT1
■
Thermal shut-down set at Tj = 150° C
+IN1 2
+
13 NC
■
Large protection on outputs
■
Power-down mode with high Z-out
SO-14
A1 3
VCC - 4
■
Very low noise
■
Tested at 5 and 12-V supplies
■
Single or dual supply operation
■
Minimum and maximum limits are tested in full
production
A0 5
Applications
■
Power line equipment
■
Drivers for xDSL modems
■
Video drivers
■
Video distribution
)
s
(
ct
+IN2 6
+
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t
le
-IN2 7
)
s
t(
12 NC
Power
control
11 VCC +
o
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P
c
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d
10 NC
9 NC
8 OUT2
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Description
r
P
e
The TS617 is a wideband high output current dual
operational amplifier optimized for driving high
data rates on power lines and twisted pair
telephone lines.
t
e
l
o
The TS617 features a linearity on low resistive
loads, large output swing and high output current,
very low noise, low consumption and I-supply
control and power-down mode with high Z-out
and short settling times.
s
b
O
November 2008
Rev 1
1/19
www.st.com
19
Absolute maximum ratings and operating conditions
1
TS617
Absolute maximum ratings and operating conditions
Table 1.
Absolute maximum ratings
Symbol
VCC
Vid
Parameter
Supply voltage (1)
(2)
Differential input voltage
Value
Unit
14
VDC
±2
V
Toper
Operating free air temperature range
-40 to +85
°C
Tstg
Storage temperature
-65 to +150
°C
Maximum junction temperature
150
°C
ΘJA
SO14 thermal resistance junction to ambient
103
°C/W
ΘJC
SO14 thermal resistance junction to case
31
°C/W
SO14 maximum power dissipation(3) (at Ta = 25° C) for
Tj = 150° C
1.2
W
Tj
Pmax
HBM: human body model (4)
ESD
MM: machine model
2
uc
(5)
200
CDM: charged device model
od
1
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t
le
1. All voltage values are measured with respect to the ground pin.
)
s
t(
kV
V
kV
2. Differential voltage is between the non-inverting input terminal and the inverting input terminal.
3. Short-circuits can cause excessive heating. Destructive dissipation can result from short circuits on
amplifiers. An internal thermal shut-down set the circuit in power down mode automatically when the silicon
temperature reaches 150°C.
o
s
b
O
-
4. Human body model: 100 pF discharged through a 1.5 kΩ resistor into Pmin of device.
5. This is a minimum value. Machine model ESD: a 200 pF capacitor is charged to the specified voltage, then
discharged directly into the IC with no external series resistor.
Table 2.
Operating conditions
)
s
(
ct
Symbol
Parameter
VCC
Power supply voltage (1)
Vicm
Common mode input voltage
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1. Tested in full production at ±2.5 V and ±6 V supply voltages.
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2/19
Value
Unit
4.5 to13
V
±6
V
TS617
Electrical characteristics
2
Electrical characteristics
Table 3.
VCC = ±2.5 V, Tamb = 25° C, full power mode (unless otherwise specified)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
-10
2.5
10
Unit
DC performance
Tamb
Vio
Input offset voltage
ΔVio
Vio drift vs. temperature
Iib+
Non-inverting input bias current
Iib-
Inverting input bias current
mV
Tmin. < Tamb < Tmax.
2.7
Tmin. < Tamb < Tmax.
5
Tamb
-50
Tmin. < Tamb < Tmax.
SVR
PSRR
Tamb
-30
ΔVic = ±1 V
Supply voltage rejection ratio
20 log (ΔVCC/ΔVio)
ΔVCC = ±2 V to ±2.5 V
50
Tmin. < Tamb < Tmax.
Power supply rejection ratio
20 log (ΔVCC/ΔVout)
Gain = +4, Rfb = 390 Ω
ΔVCC = ±100 mV at 100 kHz
o
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45
50
c
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76
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le
50
9
)
s
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dB
dB
11
mA
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-
10
7
8
mA
Tmin. < Tamb < Tmax.
t
c
u
μA
55
Medium power, no load
(s)
51
μA
dB
Tmin. < Tamb < Tmax.
Supply current per operator
-30
-12
Full power, no load
ICC
-11
Common mode rejection ratio
20 log (ΔVic/ΔVio)
Tmin. < Tamb < Tmax.
+50
-20
Tmin. < Tamb < Tmax.
CMR
-15
μV/°C
7.5
Low power, no load
2
Tmin. < Tamb < Tmax.
2.3
3
mA
Dynamic performance and output characteristics
od
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Bw
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ROL
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-3 dB bandwidth in small signal
Open-loop transimpedance
Small signal Vout = 20 mVp-p
RL = 100 Ω
Gain = +2, Rfb = 620 Ω
Gain = +4, Rfb = 390 Ω
Gain = +8, Rfb = 390 Ω
90
Gain = +4, low power
33
RL = 100 Ω,Vout = 2 Vp-p
50
MHz
110
kΩ
Tmin. < Tamb < Tmax.
Slew rate
125
105
55
Gain = +4, medium power
Vout = 3 Vp-p, gain = +4,
RL = 100 Ω
SR
70
90
300
450
Medium power
400
Low power
100
V/μs
3/19
Electrical characteristics
Table 3.
TS617
VCC = ±2.5 V, Tamb = 25° C, full power mode (unless otherwise specified) (continued)
Symbol
Parameter
Test conditions
RL = 100 Ω
RL = 25 Ω
VOH
High level output voltage
Min.
Typ.
1.6
1.5
1.68
1.58
Low level output voltage
1.6
1.5
Iout
-1.68
-1.57
-1.6
-1.5
Vout = -1 V
Isource
Ishort circuit
(limited by thermal shut down)
-1.60
-1.50
V
Tmin. < Tamb < Tmax.
RL = 100 Ω
RL = 25 Ω
Isink
Unit
V
Tmin. < Tamb < Tmax.
RL = 100 Ω
RL = 25 Ω
RL = 100 Ω
RL = 25 Ω
VOL
Max.
300
350
Tmin. < Tamb < Tmax.
330
Vout = +1 V
-370
Tmin. < Tamb < Tmax.
-350
Output to GND
600
-300
c
u
d
Noise and distortion
)
s
t(
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r
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mA
3.5
nV/√Hz
39
pA/√ Hz
20
pA/√ Hz
eN
Input noise voltage
F = 100 kHz
iNp
Positive input noise current
F = 100 kHz
iNn
Positive input noise current
F = 100 kHz
2nd and 3rd harmonics
Vout = 2 Vp-p, gain = +4,
Rfb=390 Ω, F = 6 MHz
RL = 25 Ω,
H2
H3
-58
-68
Consumption in power-down
mode
A1 = 0, A0 = 0
65
Tmin. < Tamb < Tmax.
80
Time for power-down mode to
operating mode
A1 = A0 = 0 to A1 = A0 = 1
Vout = 1 Vdc, gain = +4
80
200
ns
A1 = A0 = 1 to A1 = A0 = 0
Vout = 1 Vdc, gain = +4
450
1000
ns
H2/H3
)
s
(
ct
Power-down function
Ipdw
ton
toff
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4/19
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du
Time for operating mode to
power-down mode
e
t
le
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-
dBc
200
µA
TS617
Electrical characteristics
Table 4.
VCC = ±6 V, Tamb = 25° C, full power mode (unless otherwise specified)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
-12
4.5
12
Unit
DC performance
Tamb
Vio
Input offset voltage
ΔVio
Vio drift vs. temperature
Iib+
Non-inverting input bias current
Iib-
Inverting input bias current
mV
Tmin. < Tamb < Tmax.
5
Tmin. < Tamb < Tmax.
5
Tamb
-80
Tmin. < Tamb < Tmax.
SVR
PSRR
Tamb
-35
Common mode rejection ratio
20 log (ΔVic/ΔVio)
ΔVic = ±3 V
Supply voltage rejection ratio
20 log (ΔVCC/ΔVio)
ΔVCC = ±2.5 V to ±6 V
Tmin. < Tamb < Tmax.
65
Power supply rejection ratio
20 log (ΔVCC/ΔVout)
Gain = +4, Rfb = 390 Ω
ΔVCC = ±100 mV at 100 kHz
50
45
50
ROL
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SR
VOH
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Open-loop transimpedance
Slew rate
High level output voltage
c
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13
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t
le
9.7
140
300
210
110
160
Gain = +4, low power
60
30
4
MHz
70
50
400
650
1000
Medium power, Vout = 5 Vp-p
500
Low power, Vout = 5 Vp-p
200
Tmin. < Tamb < Tmax.
12
kΩ
Tmin. < Tamb < Tmax.
Gain = +4, RL = 100 Ω
Vout = 5 Vp-p
Vout = 10 Vp-p
mA
mA
Gain = +4, medium power
RL = 100 Ω, Vout = 7 Vp-p
16
mA
2.9
Small signal Vout = 20 mVp-p
RL = 100 Ω
Gain = +2, Rfb = 620 Ω
Gain = +4, Rfb = 390 Ω
Gain = +8, Rfb = 390 Ω
dB
10.5
Tmin. < Tamb < Tmax.
RL = 100 Ω
)
s
t(
14
2.6
)
s
(
ct
-3 dB bandwidth in small signal
72
Low power, no load
Dynamic performance and output characteristics
du
51
dB
o
s
b
O
-
Tmin. < Tamb < Tmax.
μA
50
Medium power, no load
Supply current per operator
35
μA
dB
Tmin. < Tamb < Tmax.
Tmin. < Tamb < Tmax.
Bw
-7
-9
Full power, no load
ICC
80
-30
Tmin. < Tamb < Tmax.
CMR
-25
μV/°C
5
V/μs
5.1
V
5
5/19
Electrical characteristics
Table 4.
VCC = ±6 V, Tamb = 25° C, full power mode (unless otherwise specified) (continued)
Symbol
VOL
TS617
Parameter
Low level output voltage
Test conditions
Min.
RL = 100 Ω
Ishort circuit
(limited by thermal shut down)
-5.1
-5
Unit
-5
Vout = -4 V
Isource
Iout
Max.
V
Tmin. < Tamb < Tmax.
Isink
Typ.
450
540
Tmin. < Tamb < Tmax.
510
Vout = +4 V
-550
Tmin. < Tamb < Tmax.
-490
Output to GND
(limited by internal thermal
shut-down)
800
-450
mA
Noise and distortion
eN
Equivalent input noise voltage
F = 100 kHz
3.5
iNp
Positive input noise current
F = 100 kHz
39
iNn
Positive input noise current
F = 100 kHz
20
2nd and 3rd harmonics
Vout = 2 Vp-p, gain = +4,
F = 6 MHz
RL = 100 Ω,
H2
H3
H2/H3
c
u
d
pA/√ Hz
dBc
-66
-73
Consumption in power-down
mode
A1= 0, A0 = 0
Tmin. < Tamb < Tmax.
110
ton
Time for power-down mode to
operating mode
A1 = A0 = 0 to A1 = A0 = 1
Vout = 4 Vdc, gain = +4
60
200
ns
toff
Time for operating mode to
power-down mode
A1 = A0 = 1 to A1 = A0 = 0
Vout = 4 Vdc, gain = +4
550
1000
ns
Ipdw
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6/19
so
)
s
t(
pA/√ Hz
ro
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e
let
Power-down function
nV/√Hz
c
u
d
(t s)
b
O
-
90
300
µA
TS617
Electrical characteristics
Table 5.
A1 and A0 thresholds
Symbol
Parameter
Test condition
Min.
Max.
High level
-VCC + 2 V
+VCC
Low level
-VCC
-VCC + 0.8 V
A1
A1 and A0 threshold
A0
Table 6.
Table 7.
Figure 1.
A1 and A0 states
A1
A0
State of the TS617
0
0
Standby
0
1
Low power
1
0
Medium power
1
1
High power
Feedback resistor
Gain (V2/V1)
Rfb (Ω)
2
620
4
390
8
390
Feedback configuration
6
.ON
INVERTER
)
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(
ct
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2G
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)
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t(
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6
2
LOAD
2FB
2FB
6
?
2IN
)NVERTER
6
2
LOAD
!-
7/19
Electrical characteristics
Figure 2.
TS617
Gain vs. frequency (VCC = 5 V)
Figure 3.
20
Gain vs. frequency (VCC = 12 V)
20
high power
10
10
high power
0
Gain (dB)
Gain (dB)
0
-10
medium
power
-20
-30
-40
1M
Vcc=+/-2.5V
Small signal
Load=25Ω
Gain=+4, Rfb=390Ω
-10
medium
power
-20
-30
low power
10M
100M
-40
1M
1G
Vcc=+/-6V
Small signal
Load=100Ω
Gain=+4, Rfb=390Ω
10M
Frequency (Hz)
Figure 4.
Input noise
Figure 5.
No load
Input to GND
Distortion (VCC = 5 V)
Vcc=+/-2.5V
F=6MHz
Load=25Ω
-20
Distortion (dB)
en (nV/VHz)
20
15
10
5
-40
H3
-50
100
1k
10k
100k
Frequency (Hz)
-70
so
0
Vcc=+/-6V
F=6MHz
Load=100Ω
o
r
P
e
-10
-20
-30
-50
-100
0.0
0.5
o
r
P
1.0
1.5
2.0
2.5
Output Amplitude (Vp-p)
Figure 7.
du
ICC vs. VCC
14
dual supply
12
10
t
e
l
o
-40
)
s
(
ct
Distortion (VCC = 12 V)
)
s
t(
H2
b
O
1M
Icc (mA)
Figure 6.
e
t
le
-60
-80
0
c
u
d
-30
-90
Distortion (dB)
1G
0
-10
H3
s
b
O
-70
100M
Frequency (Hz)
25
-60
low power
H2
8
6
4
-80
2
-90
-100
0
0
2
4
6
Output Amplitude (Vp-p)
8/19
8
10
0
1
2
3
+/-Vcc (V)
4
5
6
TS617
Electrical characteristics
Figure 8.
PSRR
Figure 9.
300
10
Vcc=12V(dc)+0.2Vp-p(ac)
Load=100Ω
0
280
-10
260
-20
Bw (MHz)
Noise supply rejection (dB)
Bandwidth vs. temperature
-30
-40
-50
240
220
200
-60
180
Vcc=+/-6V
Load=100 Ω
-70
160
-80
10k
100k
1M
10M
100M
-40
-20
0
Frequency (Hz)
20
Figure 10. Transimpedance vs. temperature
15
14
Vcc=+/-6V
85
uc
13
d
o
r
11
10
ICC (mA)
ROL (kΩ )
75
70
65
9
P
e
let
8
7
6
5
60
4
55
o
s
b
O
3
2
50
1
45
-40
-20
0
20
40
60
Temperature (°C)
)
s
(
ct
o
r
P
e
du
Low power
0
20
40
60
80
60
80
Temperature (°C)
2.5
2.0
bs
1.5
1.0
500
0.5
Vcc=+/-6V
Load=100Ω
450
-40
-20
Medium power
3.0
t
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o
600
)
s
t(
Figure 13. Vio vs. temperature
Vio (mV)
Slew rate (V/µs)
650
Vcc=±6V
no load
0
-40
80
Figure 12. Slew rate vs. temperature
700
80
Full power
12
80
O
60
Figure 11. ICC vs. temperature
90
550
40
Temperature (°C)
-20
Vcc=+/-6V
0
20
40
Temperature (°C)
60
80
0.0
-40
-20
0
20
40
Temperature (°C)
9/19
Electrical characteristics
TS617
Figure 14. Ibias vs. temperature
Figure 15. Power down vs. temperature
0
120
110
-5
Vcc=±6V
Ib100
-10
Ipdw (µA)
90
IBIAS (μA)
-15
-20
80
70
Vcc=±2.5V
60
Ib+
50
-25
40
-30
30
Vcc=+/-6V
-35
-40
no load
-20
0
20
40
60
20
-40
80
-20
0
20
40
Temperature (°C)
Temperature (°C)
Figure 16. VOH vs. temperature
Figure 17. VOL vs. temperature
6.0
-4.0
Vcc=+/-6V
Load=100Ω
5.0
4.5
4.0
-40
-20
0
20
40
60
Temperature (°C)
)
s
(
ct
Figure 18. Ton vs. temperature
100
o
r
P
e
80
-6.0
-40
80
-20
0
80
)
s
t(
o
r
P
20
40
60
80
60
80
Temperature (°C)
Figure 19. Toff vs. temperature
du
1000
800
Toff (µs)
Ton (µs)
e
t
le
o
s
b
O
-
t
e
l
o
60
bs
600
400
20
Vcc=+/-6V
Load=100 Ω
0
-40
-20
200
0
20
40
Temperature (°C)
10/19
-5.0
-5.5
Vcc=+/-6V
Load=100 Ω
O
c
u
d
-4.5
VOL (V)
VOH (V)
5.5
40
60
60
80
-40
Vcc=+/-6V
Load=100 Ω
-20
0
20
40
Temperature (°C)
TS617
Electrical characteristics
Figure 21. Isource vs. temperature
700
-400
650
-450
600
-500
Isource (mA)
Isink (mA)
Figure 20. Isink vs. temperature
550
500
450
-550
-600
-650
Vcc=+/-6V
400
-40
Vcc=+/-6V
-20
0
20
40
60
-700
-40
80
-20
0
Temperature (°C)
20
Figure 22. SVR vs. temperature
60
Figure 23. CMR vs. temperature
90
52
85
c
u
d
51
CMR (dB)
80
SVR (dB)
40
75
50
e
t
le
49
70
o
s
b
O
48
65
Vcc=+/-6V
60
-40
80
Temperature (°C)
)
s
t(
o
r
P
Vcc=+/-6V
-20
0
20
40
Temperature (°C)
60
)
s
(
ct
80
47
-40
-20
0
20
40
60
80
Temperature (°C)
u
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P
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t
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b
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11/19
Safe operating area
3
TS617
Safe operating area
Figure 24. Equivalent schematic
6CC
6CC
6OUTRMS
)OUTRMS
43
6OUTRMS
2
LOAD
6CC
)
s
t(
!-
c
u
d
Vout(rms) is the rms output voltage value. Iout(rms) is the rms output current value through
the output load R-load. When supplied by +/-Vcc, the power which must be dissipated by
one operator is p=Iout(rms)x(+Vcc-Vout(rms)). Since the TS617 is used in a differential
configuration using both operators, it must dissipate 2 x p. The power dissipated by the
TS617 is derived from:
(eq1),
e
t
le
o
r
P
o
s
b
O
-
P = 2 x [ Iout(rms) x (+Vcc-Vout(rms)) ].
In the following formula:
)
s
(
ct
(eq2),
Tj – Tamb )P = (------------------------------Rthja
u
d
o
Tj is the junction temperature, Tamb is the ambient temperature and Rthja is the junction-toambient thermal resistance of the package (SO-14: Rthja = 103° C/watt).
r
P
e
Assuming that Tj must be lower than 150° C to avoid any damage to the dice, it is derived
from (eq2):
t
e
l
o
s
b
O
12/19
(eq3),
150 – Tamb
Pmax = --------------------------------, ( inWatt )
103
From (eq1) and (eq3) we can easily extract the maximum value of Vout(rms) that the TS617
can drive without any damage (according to Tamb and R-load).
TS617
4
Typical application
Typical application
Figure 25. Power line interface
6OR6
-ATCHING
0OWERPLUG
6P
PDIFF
-(Z
).4
,INE 7 TOK7
ON-(Z
-ATCHING
uc
P
e
let
0OWERDENSITY
(OMETURBO
-BPS
0OWER D"M
!MPLITUDE 6P
PON7
6RMSWITHCRESTFACTOR
03$
D"M(Z
-(Z
)
s
(
ct
o
s
b
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-
u
d
o
!-
d
o
r
Figure 26. Power line spectrums
(OMEPLUG
-BPS
)
s
t(
-(Z
&REQUENCY
0OWERDENSITY
r
P
e
(OMEPLUG!6
-BPS
s
b
O
t
e
l
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0OWER D"M
!MPLITUDE 6P
PON7
6RMSWITHCRESTFACTOR
03$
D"M(Z
-(Z
-(Z &REQUENCY
!-
●
Power on the line: P(dBm) = 10 Log( ΣBw x 10PSD/10)
●
PSD: power spectrum density
●
ΣBw: total bandwidth summation
●
Power line: PSD = -50 dBm/Hz on 50 Ω
13/19
Typical application
TS617
Figure 27. vDSL interface
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2FB
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TELEPHONELINE
2
2FB
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Figure 28. vDSL spectrum
0OWERDENSITY
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G. 9.9.8 Standard
G. 9.9.7 Standard
Power (on 100-Ω line)
Vp-p (on 100-Ω line)
Power (on 100-Ω line)
Vp-p (on 100-Ω line)
CPE: 6.95 dBm
7.9 Vp-p
CPE: 8.48 dBm
9.4 Vp-p
CO: 8.4 dBm
9.3 Vp-p
CO: 6.82 dBm
7.8 Vp-p
CO DS3: 10.4 dBm
11.7 Vp-p
CO DS3: 9.45 dBm
10.5 Vp-p
TS617
5
Package information
Package information
In order to meet environmental requirements, STMicroelectronics offers these devices in
ECOPACK® packages. These packages have a lead-free second level interconnect. The
category of second level interconnect is marked on the package and on the inner box label,
in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an STMicroelectronics
trademark. ECOPACK specifications are available at: www.st.com.
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Package information
TS617
Figure 29. SO-14 package mechanical drawing
Table 9.
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SO-14 package mechanical data
Dimensions
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Millimeters
Ref.
Min.
A
1.35
A1
0.10
A2
1.10
B
0.33
C
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3.80
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Inches
Typ.
Max.
1.75
0.05
0.068
0.25
0.004
0.009
1.65
0.04
0.06
0.51
0.01
0.02
0.25
0.007
0.009
8.75
0.33
0.34
4.0
0.15
0.15
1.27
0.05
H
5.80
6.20
0.22
0.24
h
0.25
0.50
0.009
0.02
L
0.40
1.27
0.015
0.05
k
ddd
8° (max.)
0.10
0.004
D and F dimensions do not include mold flash or protrusions. Mold flash or protrusions must
not exceed 0.15 mm.
TS617
6
Ordering information
Ordering information
Table 10.
Order codes
Order code
Temperature range
Package
-40°C to +85°C
SO-14
Packaging
TS617ID
Marking
Tube
TS617I
TS617IDT
Tape & reel
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Revision history
7
TS617
Revision history
Table 11.
Document revision history
Date
Revision
03-Nov-2008
1
Changes
Initial release.
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TS617
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