TS820-600

® TN8, TS8 and TYNx08 Series 8A SCRs SENSITIVE & STANDARD MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT Value 8 600 to 1000 0.2 to 15 Unit G A A K V mA KA G A A DESCRIPTION Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8A SCR series is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits... Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space area. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) K DPAK (TS8-B) (TN8-B) A A G IPAK (TS8-H) (TN8-H) A K A K G A G TO-220AB (TS8-T) TO-220AB (TYNx) Value Tc = 110°C Tc = 110°C 8 5 TS8/TN8 TYN 100 95 45 Unit A A ITSM Non repetitive surge peak on-state current I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range tp = 8.3 ms tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 µs Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C 73 70 24.5 50 4 1 A A2S A/µs A W °C V I ²t dI/dt IGM PG(AV) Tstg Tj VRGM - 40 to + 150 - 40 to + 125 5 Maximum peak reverse gate voltage (for TN8 & TYN only) April 2002 - Ed: 4A 1/9 TN8, TS8 and TYNx08 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) s SENSITIVE Symbol IGT VGT VGD VRG IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IRG = 10 µA IT = 50 mA IG = 1 mA ITM = 16 A RGK = 1 kΩ RGK = 1 kΩ RGK = 220 Ω Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C tp = 380 µs RL = 3.3 kΩ RGK = 220 Ω Tj = 125°C VD = 12 V RL = 140 Ω Test Conditions MAX. MAX. MIN. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. TS820 200 0.8 0.1 8 5 6 5 1.6 0.85 46 5 1 Unit µA V V V mA mA V/µs V V mΩ µA mA VD = 65 % VDRM Threshold voltage Dynamic resistance VDRM = VRRM RGK = 220 Ω s STANDARD Symbol IGT VD = 12 V VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IT = 100 mA IG = 1.2 IGT VD = 67 % VDRM ITM = 16 A Gate open Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C RL = 3.3 kΩ Gate open Tj = 125°C RL = 33 Ω Test Conditions MIN. MAX. MAX. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. 25 30 50 TN805 TN815 TYNx08 0.5 5 2 15 1.3 0.2 40 50 150 1.6 0.85 46 5 2 30 70 150 2 15 V V mA mA V/µs V V mΩ µA mA Unit mA tp = 380 µs Threshold voltage Dynamic resistance VDRM = VRRM THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-a) Junction to case (DC) Junction to ambient (DC) S = 0.5 cm² S= copper surface under tab Parameter Value 20 TO-220AB IPAK DPAK 60 100 70 Unit °C/W °C/W 2/9 /T TN8, TS8 and TYNx08 Series PRODUCT SELECTOR Voltage (xxx) Part Number 600 V TN805-xxxB TN805-xxxH TN815-xxxB TN815-xxxH TS820-xxxB TS820-xxxH TS820-xxxT TYNx08 X X X X X X X X X X X X X 700 V 800 V X X X X 1000 V 5 mA 5 mA 15 mA 15 mA 0.2 mA 0.2 mA 0.2 mA 15 mA DPAK IPAK DPAK IPAK DPAK IPAK TO-220AB TO-220AB Sensitivity Package ORDERING INFORMATION TN STANDARD SCR SERIES CURRENT: 8A 8 05 - 600 B (-TR) PACKAGE: B: DPAK H: IPAK PACKING MODE: Blank: Tube -TR: DPAK Tape & Reel SENSITIVITY: 05: 5mA 15: 15mA VOLTAGE: 600: 600V 800: 800V TS SENSITIVE SCR SERIES CURRENT: 8A 8 20 - 600 B (-TR) PACKAGE: B: DPAK H: IPAK T: TO-220AB PACKING MODE: Blank: Tube -TR: DPAK Tape & Reel SENSITIVITY: 20: 200µA VOLTAGE: 600: 600V 700: 700V TYN STANDARD SCR SERIES VOLTAGE: 6: 600V 8: 800V 10: 1000V 6 08 (RG) PACKING MODE Blank: Bulk RG: Tube CURRENT: 8A 3/9 TN8, TS8 and TYNx08 Series OTHER INFORMATION Part Number TN805-x00B TN805-x00B-TR TN805-x00H TN815-x00B TN815-x00B-TR TN815-x00H TS820-x00B TS820-x00B-TR TS820-x00H TS820-x00T TYNx08 TYNx08RG Note: x = voltage Marking TN805x00 TN805x00 TN805x00 TN815x00 TN815x00 TN815x00 TS820x00 TS820x00 TS820x00 TS820x00T TYNx08 TYNx08 Weight 0.3 g 0.3 g 0.4 g 0.3 g 0.3 g 0.4 g 0.3 g 0.3 g 0.4 g 2.3 g 2.3 g 2.3 g Base Quantity 75 2500 75 75 2500 75 75 2500 75 50 250 50 Packing mode Tube Tape & reel Tube Tube Tape & reel Tube Tube Tape & reel Tube Tube Bulk Tube Fig. 1: Maximum average power dissipation versus average on-state current. P(W) 8 7 6 5 4 3 2 1 0 0 1 2 IT(av)(A) 3 4 α 360° Fig. 2-1: Average and D.C. on-state current versus case temperature. IT(av)(A) 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 α = 180° DC α = 180° Tcase(°C) 0 25 50 75 100 125 5 6 Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) (DPAK). IT(av)(A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Fig. 3-1: Relative variation of thermal impedance junction to case versus pulse duration. K = [Zth(j-c)/Rth(j-c)] 1.0 DC α =180° 0.5 0.2 Tamb(°C) 0 25 50 75 100 125 0.1 1E-3 1E-2 tp(s) 1E-1 1E+0 4/9 TN8, TS8 and TYNx08 Series Fig. 3-2: Relative variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, FR4 PC board for DPAK). K = [Zth(j-a)/Rth(j-a)] 1.00 Fig. 4-1: Relative variation of gate trigger current and holding current versus junction temperature for TS8 series. IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 IGT DPAK 0.10 TO-220AB IH & IL Rgk = 1k Ω tp(s) 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Tj(°C) -20 0 20 40 60 80 100 120 140 Fig. 4-2: Relative variation of gate trigger current and holding current versus junction temperature for TN8 & TYN series. IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C] 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 Fig. 5: R elative variation of holding current versus gate-cathode resistance (typical values) for TS8 series. IH[Rgk] / IH[Rgk = 1kΩ] IGT IH & IL Tj(°C) -20 0 20 40 60 80 100 120 140 Rgk(kΩ) Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values) for TS8 series. dV/dt[Rgk] / dV/dt [Rgk = 220Ω] Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values) for TS8 series. 15.0 12.5 10.0 7.5 5.0 dV/dt[Cgk] / dV/dt [Rgk = 220 Ω] VD = 0.67 x VDRM Tj = 125°C Rgk = 220 Ω Rgk(kΩ) 2.5 Cgk(nF) 0.0 0 20 40 60 80 100 120 140 160 180 200 220 5/9 TN8, TS8 and TYNx08 Series Fig. 8: Surge peak on-state current versus number of cycles. TS8/TN8/TYN. Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of I²t. ITSM(A),I2t(A2s) 1000 Tj initial = 25°C ITSM(A) 100 90 80 TYN 70 Non repetitiv e Tj initial = 25 °C 60 50 TS8/TN8 40 30 Repetitive Tcase = 110 °C 20 10 Number of cycles 0 1 10 tp = 10ms One cycle dI/dt limitattion ITSM TS8/TN8 TYN I2t TS8/TN8 TYN 100 tp(ms) 100 1000 10 0.01 0.10 1.00 10.00 Fig. 10: On-state characteristics (maximum values). Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm) (DPAK). Rth(j-a) ( °C/W) 100 ITM(A) 50.0 Tj max.: Vto = 0.85V Rd = 46m Ω 80 60 Tj = 25°C 10.0 Tj = Tj max. 1.0 40 20 VTM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 S(cm 2) 0 0 2 4 6 8 10 12 14 16 18 20 6/9 TN8, TS8 and TYNx08 Series PACKAGE MECHANICAL DATA DPAK (Plastic) DIMENSIONS REF. Millimeters Min. A A1 A2 B B2 C C2 D E G H L2 L4 R V2 Max Min. Inches Max. R R 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0.2 typ. 0° 8° 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0.007 typ. 0° 8° FOOTPRINT DIMENSIONS (in millimeters) DPAK (Plastic) 6.7 6.7 3 3 1.6 2.3 2.3 1.6 7/9 TN8, TS8 and TYNx08 Series PACKAGE MECHANICAL DATA IPAK (Plastic) DIMENSIONS REF. A E B2 L2 C2 Millimeters Min. Typ. Max. 2.4 1.1 1.3 0.9 5.4 0.85 0.3 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 10° 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 Min. 0.086 0.035 0.027 0.025 0.204 Inches Typ. Max. 0.094 0.043 0.051 0.035 0.212 0.033 0.035 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.031 0.039 10° D H L L1 B6 B3 B V1 A1 B5 G C A3 A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 2.2 0.9 0.7 0.64 5.2 TO-220AB (Plastic - with notches) DIMENSIONS REF. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Millimeters Min. Max. Min. Inches Max. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 8/9 TN8, TS8 and TYNx08 Series PACKAGE MECHANICAL DATA TO-220AB (Without notches) DIMENSIONS B C REF. Millimeters Min. Typ. 3.75 Max. Min. Inches Typ. 0.147 Max. 0.625 b2 L F I A l4 a1 c2 l3 l2 a2 b1 e M c1 A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M 15.20 15.90 0.598 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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