TS912BI

® TS912 RAIL TO RAIL CMOS DUAL OPERATIONAL AMPLIFIER . . . . . . . . . RAIL TO RAIL INPUT AND OUTPUT VOLTAGE RANGES SINGLE SUPPLY OPERATION FROM 2.7V TO 16V EXTREMELY LOW INPUT BIAS CURRENT : 1pA typ LOW INPUT OFFSET VOLTAGE : 2mV max. SPECIFIED FOR 600Ω AND 100Ω LOADS LOW SUPPLY CURRENT : 200µA/Ampli (VCC = 3V) ESD TOLERANCE : 3KV LATCH-UP IMMUNITY MACROMODEL INCLUDED IN THIS SPECIFICATION N DIP8 (Plastic Package) D SO8 (Plastic Micropackage) ORDER CODES Part Number TS912I/AI/BI Temperature Range -40, +125oC Package N • D • PIN CONNECTIONS (top view) DESCRIPTION The TS912 is a RAIL TO RAIL CMOS dual operational amplifier designed to operate with a single or dual supply voltage. The input voltage range Vicm includes the two supply rails VCC+ and VCC-. The output reaches : • VCC- +40mV VCC+ -50mV with RL = 10kΩ • VCC- +350mV VCC+ -350mV with RL = 600Ω This product offers a broad supply voltage operating range from 2.7V to 16V and a supply current of only 200µA/amp. (VCC = 3V). Source and sink output current capability is typically 40mA (at VCC = 3V), fixed by an internal limitation circuit. STMicroelectronics is offering a quad op-amp with the same features : TS914. April 1999 Output 1 Inverting Input 1 Non-inverting Input 1 1 2 3 4 + + 8V CC + 7 Output 2 6 Inverting Input 2 5 Non-inverting Input 2 V CC 1/12 TS912 SCHEMATIC DIAGRAM (1/2 TS912) VCC Non-inverting Input Inte rnal Vre f Inverting Input O utput VCC ABSOLUTE MAXIMUM RATINGS Symbol VCC Vid Vi Iin Io Toper Tstg Notes : Parameter Supply Voltage - (note 1) Differential Input Voltage - (note 2) Input Voltage - (note 3) Current on Inputs Current on Outputs Operating Free Air Temperature Range TS912I/AI/BI Storage Temperature Value 18 ±18 -0.3 to 18 ±50 ± 130 -40 to +125 -65 to +150 Unit V V V mA mA o C C o 1. All voltage values, except differential voltage are with respect to network ground terminal. 2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. 3. The magnitude of input and output voltages must never exceed VCC+ +0.3V. OPERATING CONDITIONS Symbol VCC Vicm Supply Voltage Common Mode Input Voltage Range - Parameter Value 2.7 to 16 VCC -0.2 to VCC++0.2 Unit V V 2/12 TS912 ELECTRICAL CHARACTERISTICS VCC+ = 3V, VCC- = 0V, RL,CL connected to VCC/2, Tamb = 25oC (unless otherwise specified) Symbol Vio Parameter Input Offset Voltage (V ic = Vo = VCC/2) Tmin. ≤ Tamb ≤ Tmax. DVio Iio Iib ICC CMR SVR Avd VOH TS912 TS912A TS912B TS912 TS912A TS912B Min. TS912I/AI/BI Typ. Max. 10 5 2 12 7 3 5 1 100 200 1 150 300 200 300 400 70 50 80 3 10 2 2.95 2.9 2.96 2.3 2.6 2 2.8 2.1 30 300 900 50 70 400 100 600 20 20 40 40 0.8 0.4 0.3 30 30 mA MHz V/µs V/µs Degrees nV  Hz √ mV Unit mV Input Offset Voltage Drift Input Offset Current - (note 1) Tmin. ≤ Tamb ≤ Tmax. Input Bias Current - (note 1) Tmin. ≤ Tamb ≤ Tmax. Supply Current (per amplifier, AVCL = 1, no load) Tmin. ≤ Tamb ≤ Tmax. Common Mode Rejection Ratio Vic = 0 to 3V, Vo = 1.5V + Supply Voltage Rejection Ratio (VCC = 2.7 to 3.3V, VO = VCC /2) Large Signal Voltage Gain (RL = 10kΩ, VO = 1.2V to 1.8V) Tmin. ≤ Tamb ≤ Tmax. High Level Output Voltage (V id = 1V) RL = 100kΩ RL = 10kΩ RL = 600Ω RL = 100Ω Tmin. ≤ Tamb ≤ Tmax. RL = 10kΩ RL = 600Ω RL = 100kΩ RL = 10kΩ RL = 600Ω RL = 100Ω RL = 10kΩ RL = 600Ω − Source (Vo = VCC ) + Sink (Vo = VCC ) µV/oC pA pA µA dB dB V/mV V VOL Low Level Output Voltage (Vid = -1V) Tmin. ≤ Tamb ≤ Tmax. Io GBP SR SR∅m en + Output Short Circuit Current (Vid = ±1V) Gain Bandwidth Product (AVCL = 100, RL = 10kΩ, CL = 100pF, f = 100kHz) Slew Rate (AVCL = 1, RL = 10kΩ, CL = 100pF, Vi = 1.3V to 1.7V) Slew Rate (AVCL = 1, RL = 10kΩ, CL = 100pF, Vi = 1.3V to 1.7V) Phase Margin Equivalent Input Noise Voltage (Rs = 100Ω, f = 1kHz) Note 1 : Maximum values including unavoidable inaccuracies of the industrial test. 3/12 TS912 ELECTRICAL CHARACTERISTICS VCC+ = 5V, VCC- = 0V, RL,CL connected to VCC/2, Tamb = 25oC (unless otherwise specified) Symbol Vio Parameter Input Offset Voltage (Vic = Vo = VCC/2) Tmin. ≤ Tamb ≤ Tmax. DVio Iio Iib ICC CMR SVR Avd VOH TS912 TS912A TS912B TS912 TS912A TS912B Min. TS912I/AI/BI Typ. Max. 10 5 2 12 7 3 5 1 100 200 1 150 300 230 350 450 85 80 40 Unit mV Input Offset Voltage Drift Input Offset Current - (note 1) Tmin. ≤ Tamb ≤ Tmax. Input Bias Current - (note 1) Tmin. ≤ Tamb ≤ Tmax. Supply Current (per amplifier, A VCL = 1, no load) Tmin. ≤ Tamb ≤ Tmax. Common Mode Rejection Ratio Vic = 1.5 to 3.5V, Vo = 2.5V + Supply Voltage Rejection Ratio (VCC = 3 to 5V, VO = VCC /2) Large Signal Voltage Gain (RL = 10kΩ, VO = 1.5V to 3.5V) Tmin. ≤ Tamb ≤ Tmax. High Level Output Voltage (Vid = 1V) R L = 100kΩ R L = 10kΩ R L = 600Ω R L = 100Ω Tmin. ≤ Tamb ≤ Tmax. R L = 10kΩ R L = 600Ω R L = 100kΩ R L = 10kΩ R L = 600Ω R L = 100Ω R L = 10kΩ R L = 600Ω − Source (Vo = VCC ) + Sink (Vo = VCC ) µV/oC pA pA µA dB 60 55 10 7 4.95 4.9 4.25 4.8 4.1 dB V/mV V 4.95 4.55 3.7 VOL Low Level Output Voltage (Vid = -1V) 40 350 1400 50 100 500 150 750 mV Tmin. ≤ Tamb ≤ Tmax. Io GBP SR + SR en VO1/VO2 ∅m Output Short Circuit Current (Vid = ±1V) 45 45 65 65 1 0.8 0.6 30 120 30 mA MHz V/µs V/µs nV  Hz √ dB Degrees Gain Bandwidth Product (AVCL = 100, RL = 10kΩ, CL = 100pF, f = 100kHz) Slew Rate (AVCL = 1, R L = 10kΩ, CL = 100pF, Vi = 1V to 4V) Slew Rate (AVCL = 1, R L = 10kΩ, CL = 100pF, Vi = 1V to 4V) Equivalent Input Noise Voltage (Rs = 100Ω, f = 1kHz) Channel Separation (f = 1kHz) Phase Margin Note 1 : Maximum values including unavoidable inaccuracies of the industrial test. 4/12 TS912 ELECTRICAL CHARACTERISTICS VCC+ = 10V, VCC- = 0V, RL,CL connected to VCC/2, Tamb = 25oC (unless otherwise specified) Symbol Vio Parameter Input Offset Voltage (Vic = Vo = VCC/2) Tmin. ≤ Tamb ≤ Tmax. DVio Iio Iib ICC CMR SVR Avd VOH TS912 TS912A TS912B TS912 TS912A TS912B Min. TS912I/AI/BI Typ. Max. 10 5 2 12 7 3 5 1 100 200 1 150 300 400 600 700 90 75 90 50 Unit mV Input Offset Voltage Drift Input Offset Current - (note 1) Tmin. ≤ Tamb ≤ Tmax. Input Bias Current - (note 1) Tmin. ≤ Tamb ≤ Tmax. Supply Current (per amplifier, A VCL = 1, no load) Tmin. ≤ Tamb ≤ Tmax. Common Mode Rejection Ratio Vic = 3 to 7V, Vo = 5V Vic = 0 to 10V, Vo = 5V Supply Voltage Rejection Ratio (VCC+ = 5 to 10V, VO = VCC /2) Large Signal Voltage Gain (RL = 10kΩ, VO = 2.5V to 7.5V) Tmin. ≤ Tamb ≤ Tmax. High Level Output Voltage (Vid = 1V) R L = 100kΩ R L = 10kΩ R L = 600Ω R L = 100Ω Tmin. ≤ Tamb ≤ Tmax. R L = 10kΩ R L = 600Ω R L = 100kΩ R L = 10kΩ R L = 600Ω R L = 100Ω R L = 10kΩ R L = 600Ω − Source (Vo = VCC ) + Sink (Vo = VCC ) µV/oC pA pA µA dB dB V/mV V 60 50 60 15 10 9.95 9.85 9 9.8 8.8 9.95 9.35 7.8 VOL Low Level Output Voltage (Vid = -1V) 50 650 2300 50 150 800 150 900 mV Tmin. ≤ Tamb ≤ Tmax. Io GBP SR + SR ∅m en THD Cin Output Short Circuit Current (Vid = ±1V) 45 50 65 75 1.4 1.3 0.8 40 30 0.024 1.5 mA MHz V/µs V/µs Degrees nV  Hz √ % pF Gain Bandwidth Product (AVCL = 100, RL = 10kΩ, CL = 100pF, f = 100kHz) Slew Rate (AVCL = 1, R L = 10kΩ, CL = 100pF, Vi = 2.5V to 7.5V) Slew Rate (AVCL = 1, R L = 10kΩ, CL = 100pF, Vi = 2.5V to 7.5V) Phase Margin Equivalent Input Noise Voltage (Rs = 100Ω, f = 1kHz) Total Harmonic Distortion (AVCL = 1, RL = 10kΩ, CL = 100pF, VO = 4.75V to 5.25V, f = 1kHz) Input Capacitance Note 1 : Maximum values including unavoidable inaccuracies of the industrial test. 5/12 TS912 TYPICAL CHARACTERISTICS Figure 1 : Supply Current (each amplifier) vs Supply Voltage SUPPLY CURRENT, I CC ( µ A) Figure 2 : Input Bias Current vs Temperature 10 0 INPUT BIAS CURRENT, I ib (pA) 600 500 400 300 200 100 0 4 8 12 16 SUPP LY VOLTAGE, V CC (V) Tamb = 25 C A VC L = 1 V O = VCC / 2 VCC = 10V V i = 5V No load 10 1 25 50 75 10 0 125 TEMPERATURE, T amb ( C) Figure 3a : High Level Output Voltage vs High Level Output Current 5 OUTPUT VOLTAGE, VOH (V) Figure 3b : High Level Output Voltage vs High Level Output Current 20 OUTPUT VOLTAGE, VOH (V) 4 3 2 T amb = 25 C V id = 100mV VCC = +5V 16 12 T a mb = 25 C Vid = 100mV VCC = +16V VCC = +10V 8 4 0 VCC = +3 V 1 0 -70 -56 -42 -28 -14 0 OUTPUT CURRENT, IOH (mA) -70 -56 -42 -28 -14 0 OUTP UT CURRENT, IOH (mA) Figure 4a : Low Level Output Voltage vs Low Level Output Current 5 4 3 2 1 T amb = 25 C V id = -100mV Figure 4b : Low Level Output Voltage vs Low Level Output Current 10 OUTPUT VOLTAGE, VOL (V) OUTPUT VOLTAGE, V OL (V) 8 6 4 2 T amb = 25 C V id = -100mV VCC = +3V VCC = 16V VCC = 10V VCC = +5V 0 14 28 42 56 70 0 14 28 42 56 70 OUTP UT CURRENT, I OL (mA) OUTPUT CURRENT, I OL (mA) 6/12 TS912 Figure 5a : Gain and Phase vs Frequency Figure 5b : Gain and Phase vs Frequency 50 40 GAIN 0 50 40 GAIN 0 45 P has e Margin Ga in Ba ndwidth P roduct PHASE (Degrees) GAIN (dB) PHASE Ta mb = 25 C VCC = 10V R L = 10k Ω C L = 100pF AVCL = 100 20 10 0 -10 10 2 Ga in Ba ndwidth P roduct P ha s e Ma rgin GAIN (dB) 30 45 90 135 180 30 20 10 0 10 10 2 P HASE Tamb = 25 C VCC = 1 0V R L = 600 Ω C L = 100pF A VCL = 100 90 135 180 10 3 10 10 10 FREQUENCY, f (Hz) 4 5 6 10 7 10 3 10 10 10 FREQUENCY, f (Hz) 4 5 6 10 7 Figure 6a : Gain Bandwidth Product vs Supply Voltage GAIN BANDW. PROD., GBP (kHz) 1800 1400 1000 Figure 6b : Gain bandwidth Product vs Supply Voltage GAIN BANDW. PROD., GBP (kHz) 180 0 14 00 1 000 6 00 20 0 Ta mb = 25 C R L = 10kΩ C L = 100pF Ta mb = 25 C R L = 600Ω C L = 100pF 600 200 0 4 8 12 16 0 4 8 12 16 SUP P LY VOLTAGE, VCC (V) S UP P LY VOLTAGE, VCC (V) Figure 7a : Phase Margin vs Supply Voltage PHASE MARGIN, φ m (Degrees) 60 50 40 30 20 Figure 7b : Phase Margin vs Supply Voltage PHASE MARGIN, φm (Degrees) 60 50 40 30 20 Tamb = 25 C R L = 10kΩ C L = 10 0pF Tamb = 25 C R L = 6 00Ω C L = 1 00pF 0 4 8 12 16 0 4 8 12 16 S UP PLY VOLTAGE, VCC (V) S UP P LY VOLTAGE, VCC (V) 7/12 PHASE (Degrees) TS912 Figure 8 : Input Voltage Noise vs Frequency EQUIVALENT INPUT VOLTAGE NOISE (nV/VHz) 1 50 100 VCC = 10V Tamb = 25 C R S = 100 Ω 50 0 10 1000 100 FREQUENCY (Hz) 10000 8/12 TS912 Applies to : TS912 (VCC = 3V) ** Standard Linear Ics Macromodels, 1993. ** CONNECTIONS : * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIV E POWER SUPPLY * 5 NEGATIVE POWER SUPPLY .SUBCKT TS912_3 1 3 2 4 5 (analog) ********************************************************** .MODEL MDTH D IS=1E-8 KF=6.564344E-14 CJO=10F * INPUT STAGE CIP 2 5 1.000000E-12 CIN 1 5 1.000000E-12 EIP 10 5 2 5 1 EIN 16 5 1 5 1 RIP 10 11 6.500000E+00 RIN 15 16 6.500000E+00 RIS 11 15 1.271505E+01 DIP 11 12 MDTH 400E-12 DIN 15 14 MDTH 400E-12 VOFP 12 13 DC 0.000000E+00 VOFN 13 14 DC 0 IPOL 13 5 4.000000E-05 CPS 11 15 2.125860E-08 DINN 17 13 MDTH 400E-12 VIN 17 5 0.000000e+00 DINR 15 18 MDTH 400E-12 VIP 4 18 0.000000E+00 FCP 4 5 VOFP 5.000000E+00 FCN 5 4 VOFN 5.000000E+00 * AMPLIFYING STAGE FIP 5 19 VOFP 2.750000E+02 FIN 5 19 VOFN 2.750000E+02 RG1 19 5 1.916825E+05 RG2 19 4 1.916825E+05 CC 19 29 2.200000E-08 HZTP 30 29 VOFP 1.3E+03 HZTN 5 30 VOFN 1.3E+03 DOPM 19 22 MDTH 400E-12 DONM 21 19 MDTH 400E-12 HOPM 22 28 VOUT 3800 VIPM 28 4 150 HONM 21 27 VOUT 3800 VINM 5 27 150 EOUT 26 23 19 5 1 VOUT 23 5 0 ROUT 26 3 75 COUT 3 5 1.000000E-12 DOP 19 68 MDTH 400E-12 VOP 4 25 1.724 HSCP 68 25 VSCP1 0.8E8 DON 69 19 MDTH 400E-12 VON 24 5 1.7419107 HSCN 24 69 VSCN1 0.8E+08 VSCTHP 60 61 0.0875 ** VSCTHP = le seuil au dessus de vio * 500 ** c.a.d 275U-000U dus a l’offset DSCP1 61 63 MDTH 400E-12 VSCP1 63 64 0 ISCP 64 0 1.000000E-8 DSCP2 0 64 MDTH 400E-12 DSCN2 0 74 MDTH 400E-12 ISCN 74 0 1.000000E-8 VSCN1 73 74 0 DSCN1 71 73 MDTH 400E-12 VSCTHN 71 70 -0.55 ** VSCTHN = le seuil au dessous de vio * 2000 ** c.a.d -375U-000U dus a l’offset ESCP 60 0 2 1 500 ESCN 70 0 2 1 -2000 .ENDS ELECTRICAL CHARACTERISTICS VCC+ = 3V, VCC- = 0V, RL, CL connected to VCC/2, Tamb = 25oC (unless otherwise specified) Symbol Vio Avd ICC Vicm VOH VOL Isink Isource GBP SR R L = 10kΩ R L = 10kΩ VO = 3V VO = 0V R L = 10kΩ, C L = 100pF R L = 10kΩ, C L = 100pF R L = 10kΩ No load, per operator Conditions Value 0 10 200 -0.2 to 3.2 2.96 30 40 40 0.8 0.3 Unit mV V/mV µA V V mV mA mA MHz V/µs 9/12 TS912 Applies to : TS912 (VCC = 5V) ** Standard Linear Ics Macromodels, 1993. ** CONNECTIONS : * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIV E POWER SUPPLY * 5 NEGATIVE POWER SUPPLY * 6 STANDBY .SUBCKT TS912_5 1 3 2 4 5 (analog) ********************************************************** .MODEL MDTH D IS=1E-8 KF=6.564344E-14 CJO=10F * INPUT STAGE CIP 2 5 1.000000E-12 CIN 1 5 1.000000E-12 EIP 10 5 2 5 1 EIN 16 5 1 5 1 RIP 10 11 6.500000E+00 RIN 15 16 6.500000E+00 RIS 11 15 7.322092E+00 DIP 11 12 MDTH 400E-12 DIN 15 14 MDTH 400E-12 VOFP 12 13 DC 0.000000E+00 VOFN 13 14 DC 0 IPOL 13 5 4.000000E-05 CPS 11 15 2.498970E-08 DINN 17 13 MDTH 400E-12 VIN 17 5 0.000000e+00 DINR 15 18 MDTH 400E-12 VIP 4 18 0.000000E+00 FCP 4 5 VOFP 5.750000E+00 FCN 5 4 VOFN 5.750000E+00 ISTB0 5 4 500N * AMPLIFYING STAGE FIP 5 19 VOFP 4.400000E+02 FIN 5 19 VOFN 4.400000E+02 RG1 19 5 4.904961E+05 RG2 19 4 4.904961E+05 CC 19 29 2.200000E-08 HZTP 30 29 VOFP 1.8E+03 HZTN 5 30 VOFN 1.8E+03 DOPM 19 22 MDTH 400E-12 DONM 21 19 MDTH 400E-12 HOPM 22 28 VOUT 3800 VIPM 28 4 230 HONM 21 27 VOUT 3800 VINM 5 27 230 EOUT 26 23 19 5 1 VOUT 23 5 0 ROUT 26 3 82 COUT 3 5 1.000000E-12 DOP 19 68 MDTH 400E-12 VOP 4 25 1.724 HSCP 68 25 VSCP1 0.8E+08 DON 69 19 MDTH 400E-12 VON 24 5 1.7419107 HSCN 24 69 VSCN1 0.8E+08 VSCTHP 60 61 0.0875 ** VSCTHP = le seuil au dessus de vio * 500 ** c.a.d 275U-000U dus a l’offset DSCP1 61 63 MDTH 400E-12 VSCP1 63 64 0 ISCP 64 0 1.000000E-8 DSCP2 0 64 MDTH 400E-12 DSCN2 0 74 MDTH 400E-12 ISCN 74 0 1.000000E-8 VSCN1 73 74 0 DSCN1 71 73 MDTH 400E-12 VSCTHN 71 70 -0.55 ** VSCTHN = le seuil au dessous de vio * 2000 ** c.a.d -375U-000U dus a l’offset ESCP 60 0 2 1 500 ESCN 70 0 2 1 -2000 .ENDS ELECTRICAL CHARACTERISTICS VCC+ = 5V, VCC- = 0V, RL, CL connected to VCC/2, Tamb = 25oC (unless otherwise specified) Symbol Vio Avd ICC Vicm VOH VOL Isink Isource GBP SR Conditions RL = 10kΩ No load, per operator RL = 10kΩ RL = 10kΩ VO = 5V VO = 0V RL = 10kΩ, C L = 100pF RL = 10kΩ, C L = 100pF Value 0 50 230 -0.2 to 5.2 4.95 40 65 65 1 0.8 Unit mV V/mV µA V V mV mA mA MHz V/µs 10/12 TS912 PACKAGE MECHANICAL DATA 8 PINS - PLASTIC DIP Dimensions A a1 B b b1 D E e e3 e4 F i L Z Min. 0.51 1.15 0.356 0.204 7.95 Millimeters Typ. 3.32 Max. Min. 0.020 0.045 0.014 0.008 0.313 Inches Typ. 0.131 Max. 1.65 0.55 0.304 10.92 9.75 2.54 7.62 7.62 6.6 5.08 3.81 1.52 0.065 0.022 0.012 0.430 0.384 0.100 0.300 0.300 0260 0.200 0.150 0.060 3.18 0.125 11/12 TS912 PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICROPACKAGE (SO) Dimensions A a1 a2 a3 b b1 C c1 D E e e3 F L M S Min. 0.1 0.65 0.35 0.19 0.25 4.8 5.8 Millimeters Typ. Max. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 5.0 6.2 o Min. 0.004 0.026 0.014 0.007 0.010 0.189 0.228 Inches Typ. Max. 0.069 0.010 0.065 0.033 0.019 0.010 0.020 0.197 0.244 1.27 3.81 3.8 0.4 4.0 1.27 0.6 8 (max.) o 0.050 0.150 0.150 0.016 0.157 0.050 0.024 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publ ication supersedes and replaces all infor mation previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. © http://www.st.com 12/12