TS921IDT

TS921 Rail-to-rail high output current single operational amplifier Datasheet − production data Features ■ Rail-to-rail input and output ■ Low noise: 9 nV/√Hz ■ Low distortion ■ High output current: 80 mA (able to drive 32 Ω loads) ■ High-speed: 4 MHz, 1 V/μs ■ Operating from 2.7 V to 12 V ■ ESD internal protection: 1.5 kV ■ Latch-up immunity ■ Macromodel included in this specification N DIP8 (plastic package) D SO-8 (plastic micropackage) Applications ■ Headphone amplifier ■ Piezoelectric speaker driver ■ Sound cards, multimedia systems ■ Line driver, actuator driver ■ Servo amplifier ■ Mobile phone and portable communication sets ■ Instrumentation with low noise as key factor Table 1. P TSSOP8 (thin shrink small outline package) Pin connections (top view) Device summary Order code TS921IN Temperature range Package Packing Marking -40 °C, +125 °C DIP8 Tube TS921IN SO-8 Tube or tape and reel TSSOP8 (thin shrink outline package) Tape and reel TS921ID/IDT TS921IPT September 2012 This is information on a product in full production. Doc ID 5560 Rev 4 921I 1/16 www.st.com 16 Description 1 TS921 Description The TS921 device is a rail-to-rail single BiCMOS operational amplifier optimized and fully specified for 3 V and 5 V operation. Its high output current allows low load impedances to be driven. The TS921 device exhibits very low noise, low distortion and low offset. It has a high output current capability which makes this device an excellent choice for high quality, low voltage or battery operated audio systems. The device is stable for capacitive loads up to 500 pF. 2/16 Doc ID 5560 Rev 4 TS921 Absolute maximum ratings 2 Absolute maximum ratings Table 2. Key parameters and their absolute maximum ratings Symbol VCC Parameter Supply voltage(1) Vid Differential input voltage Vi Input voltage Tstg Tj Condition (2) Storage temperature Maximum junction temperature Value Unit 14 V ±1 V VDD - 0.3 to VCC + 0.3 V -65 to +150 °C 150 °C Rthja Thermal resistance junction-to-ambient SO-8 TSSOP8 DIP8 125 120 85 °C/W Rthjc Thermal resistance junction-to-case SO-8 TSSOP8 DIP8 40 37 41 °C/W HBM Human body model(3) 1.5 kV MM Machine model(4) 100 V CDM Charged device model 1.5 kV ESD Electrostatic discharge See(5) Output short-circuit duration Latch-up immunity 200 mA 10 sec., standard package 250 °C 10 sec., lead-free package 260 Soldering temperature 1. All voltage values, except differential voltage are with respect to network ground terminal. 2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. If Vid > ±1 V, the maximum input current must not exceed ±1 mA. In this case (Vid > ±1 V) an input serie resistor must be added to limit input current. 3. Human body model, 100 pF discharged through a 1.5 kΩ resistor into pin of device. 4. Machine model ESD, a 200 pF cap is charged to the specified voltage, then discharged directly into the IC with no external series resistor (internal resistor < 5 Ω), into pin to pin of device. 5. There is no short-circuit protection inside the device: short-circuits from the output to VCC can cause excessive heating. The maximum output current is approximately 80 mA, independent of the magnitude of VCC. Destructive dissipation can result from simultaneous short-circuits on all amplifiers. Table 3. Operating conditions Symbol Parameter VCC Supply voltage Vicm Common mode input voltage range Toper Operating free air temperature range Doc ID 5560 Rev 4 Value Unit 2.7 to 12 V VDD - 0.2 to VCC + 0.2 V -40 to +125 °C 3/16 Electrical characteristics TS921 3 Electrical characteristics Table 4. Electrical characteristics for VCC = 3 V, VDD = 0 V, Vicm = VCC/2, RL connected to VCC/2, Tamb = 25 °C (unless otherwise specified) Symbol Vio Parameter Conditions Min. Typ. Input offset voltage at Tmin. ≤ Tamb ≤ Tmax ΔVio Input offset voltage drift Max. Unit 3 5 mV μV/°C 2 Iio Input offset current Vout = 1.5 V 1 30 nA Iib Input bias current Vout = 1.5 V 15 100 nA High level output voltage RL = 600 Ω RL = 32 Ω VOH VOL Avd GBP ICC 2.87 V 2.63 RL = 600 Ω RL = 32 Ω 180 Vout = 2 Vpk-pk RL = 600 Ω RL = 32 Ω 35 16 V/mV Gain bandwidth product RL = 600 Ω 4 MHz Supply current No load, Vout = VCC/2 1 Low level output voltage Large signal voltage gain CMR Common mode rejection ratio SVR Supply voltage rejection ratio 100 1.5 mV mA 60 80 dB 60 80 dB Output short-circuit current 50 80 mA SR Slew rate 0.7 1.3 V/μs Pm Phase margin at unit gain RL = 600 Ω, CL =100 pF 68 Degrees GM Gain margin RL = 600 Ω, CL =100 pF 12 dB en Equivalent input noise voltage f = 1 kHz 9 nV -----------Hz Total harmonic distortion Vout = 2 Vpk-pk, f = 1 kHz, Av = 1, RL = 600 Ω 0.005 % Io THD 4/16 VCC = 2.7 to 3.3 V Doc ID 5560 Rev 4 TS921 Table 5. Electrical characteristics Electrical characteristics for VCC = 5 V, VDD = 0 V, Vicm = VCC/2, RL connected to VCC/2, Tamb = 25 °C (unless otherwise specified) Symbol Vio Parameter Conditions Min. Typ. Input offset voltage at Tmin. ≤ Tamb ≤ Tmax ΔVio Input offset voltage drift Max. Unit 3 5 mV μV/°C 2 Iio Input offset current Vout = 1.5 V 1 30 nA Iib Input bias current Vout = 1.5 V 15 100 nA VOH VOL Avd GBP ICC High level output voltage RL = 600 Ω RL = 32 Ω 4.85 V 4.4 RL = 600 Ω RL = 32 Ω 300 Vout = 2 Vpk-pk RL = 600 Ω RL = 32 Ω 35 16 V/mV Gain bandwidth product RL = 600 Ω 4 MHz Supply current No load, Vout = VCC/2 1 Low level output voltage Large signal voltage gain CMR Common mode rejection ratio SVR Supply voltage rejection ratio 120 1.5 mV mA 60 80 dB 60 80 dB Output short-circuit current 50 80 mA SR Slew rate 0.7 1.3 V/μs Pm Phase margin at unit gain RL = 600 Ω, CL =100 pF 68 Degrees GM Gain margin RL = 600 Ω, CL =100 pF 12 dB Equivalent input noise voltage f = 1 kHz 9 nV -----------Hz Total harmonic distortion Vout = 2 Vpk-pk, f = 1 kHz, Av = 1, RL = 600 Ω 0.005 % Io en THD VCC = 4.5 to 5.5 V Doc ID 5560 Rev 4 5/16 Electrical characteristics Figure 1. TS921 Output short-circuit vs. output voltage (VCC = 5 V, VDD = 0 V) Figure 2. 180 60 100 Phase 80 60 120 40 L L Gain 20 0 -20 20 60 0 0 -40 -60 Phase (deg.) Sink 40 Gain (dB) Output short-circuit current (mA) Voltage gain and phase vs. frequency (RL = 10 kΩ, CL = 100 pF) Source -80 -100 -120 0 1 2 -20 1E+02 3 1E+03 1E+04 Figure 4. Output short-circuit vs. output voltage (VCC = 3 V, VDD = 0 V) 100 Equivalent input noise (nV/sqrt(Hz) Output short-circuit current (mA) Figure 3. 80 60 Sink 40 20 0 -20 -40 -60 Source -80 -100 0 0,5 1 1,5 2 2,5 3 1E+06 1E+07 -60 1E+08 Equivalent input noise voltage vs. frequency (VCC = ±1.5 V, RL = 100 Ω) 30 25 20 15 10 5 0 0.01 Output voltage (V) Figure 5. 1E+05 Frequency (Hz) Output voltage (V) 0.1 1 10 100 Frequency (kHz) Output supply current vs. supply voltage Figure 6. THD + noise vs. frequency (RL = 2 kΩ, Vo = 10 Vpp, VCC = ±6 V, Av = 1) THD + noise (%) 0.02 0.015 0.01 0.005 0 0.01 0.1 1 Frequency (kHz) 6/16 Doc ID 5560 Rev 4 10 100 TS921 Electrical characteristics Figure 7. THD + noise vs. frequency (RL = 32 Ω, Vo = 4 Vpp, VCC = ±2.5 V, Av = 1) Figure 8. 0.04 THD + noise vs. output voltage (RL = 600 Ω, f = 1 kHz, VCC = 0/3 V, Av = -1) 10 THD + noise (%) THD + noise (%) 0.032 0.024 0.016 1 0.1 0.008 0.01 0 0.01 0.1 1 10 0 100 0.2 0.4 0.6 0.8 1 Frequency (kHz) Figure 9. Figure 10. THD + noise vs. output voltage (RL = 32 Ω, f = 1 kHz, VCC = ±1.5 V, Av = -1) THD + noise vs. frequency (RL = 32 Ω, Vo = 2 Vpp, VCC = ±1.5 V, Av = 10) 10 0.7 0.6 THD + noise (%) THD + noise (%) 1 0.5 0.4 0.3 0.2 0.1 0.01 0.1 0 0.01 0.1 1 10 0.001 100 0 Frequency (kHz) Figure 11. THD + noise vs. output voltage (RL = 2 kΩ, f = 1 kHz, VCC = ±1.5 V, Av = -1) 0.2 0.4 0.6 0.8 1 1.2 Figure 12. Open loop gain and phase vs. frequency (CL = 500 pF) 10,000 180 50 Gain (dB) THD + noise (%) 120 0,100 30 20 60 0,010 Phase (deg.) 40 1,000 10 0 0 1E+2 0,001 0 0,2 0,4 0,6 0,8 1 1,2 Doc ID 5560 Rev 4 1E+3 1E+4 1E+5 1E+6 1E+7 1E+8 Frequency (Hz) 7/16 Macromodel TS921 4 Macromodel 4.1 Important note concerning this macromodel Please consider following remarks before using this macromodel: ● All models are a trade-off between accuracy and complexity (i.e. simulation time). ● Macromodels are not a substitute to breadboarding; rather, they confirm the validity of a design approach and help to select surrounding component values. ● A macromodel emulates the NOMINAL performance of a TYPICAL device within SPECIFIED OPERATING CONDITIONS (i.e. temperature, supply voltage, etc.). Thus the macromodel is often not as exhaustive as the datasheet, its goal is to illustrate the main parameters of the product. ● Data issued from macromodels used outside of its specified conditions (VCC, temperature, etc.) or even worse: outside of the device operating conditions (VCC, Vicm, etc.) are not reliable in any way. In Section 4.3, the electrical characteristics resulting from the use of these macromodels are presented. 4.2 Electrical characteristics from macromodelization Table 6. Electrical characteristics resulting from macromodel simulation at VCC = 3 V, VDD = 0 V, RL, CL connected to VCC/2, Tamb = 25 °C (unless otherwise specified) Symbol Conditions Vio Unit 0 mV Avd RL = 10 kΩ 200 V/mV ICC No load, per operator 1.2 mA -0.2 to 3.2 V Vicm 8/16 Value VOH RL = 10 kΩ 2.95 V VOL RL = 10 kΩ 25 mV Isink VO = 3 V 80 mA Isource VO = 0 V 80 mA GBP RL = 600 kΩ 4 MHz SR RL = 10 kΩ, CL = 100 pF 1.3 V/μs φm RL = 600 kΩ 68 Degrees Doc ID 5560 Rev 4 TS921 4.3 Macromodel Macromodel code ** Standard Linear Ics Macromodels, 1996. ** CONNECTIONS: * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIVE POWER SUPPLY * 5 NEGATIVE POWER SUPPLY .SUBCKT TS921 1 3 2 4 5 (analog) ********************************************************* .MODEL MDTH D IS=1E-8 KF=2.664234E-16 CJO=10F * INPUT STAGE CIP 2 5 1.000000E-12 CIN 1 5 1.000000E-12 EIP 10 5 2 5 1 EIN 16 5 1 5 1 RIP 10 11 8.125000E+00 RIN 15 16 8.125000E+00 RIS 11 15 2.238465E+02 DIP 11 12 MDTH 400E-12 DIN 15 14 MDTH 400E-12 VOFP 12 13 DC 153.5u VOFN 13 14 DC 0 IPOL 13 5 3.200000E-05 CPS 11 15 1e-9 DINN 17 13 MDTH 400E-12 VIN 17 5 -0.100000e+00 DINR 15 18 MDTH 400E-12 VIP 4 18 0.400000E+00 FCP 4 5 VOFP 1.865000E+02 FCN 5 4 VOFN 1.865000E+02 FIBP 2 5 VOFP 6.250000E-03 FIBN 5 1 VOFN 6.250000E-03 * GM1 STAGE *************** FGM1P 119 5 VOFP 1.1 FGM1N 119 5 VOFN 1.1 RAP 119 4 2.6E+06 RAN 119 5 2.6E+06 * GM2 STAGE *************** G2P 19 5 119 5 1.92E-02 G2N 19 5 119 4 1.92E-02 R2P 19 4 1E+07 R2N 19 5 1E+07 ************************** VINT1 500 0 5 Doc ID 5560 Rev 4 9/16 Macromodel TS921 GCONVP 500 501 119 4 19.38!send ds VP, I(VP)=(V119-V4)/2/Ut VP 501 0 0 GCONVN 500 502 119 5 19.38!send ds VN, I(VN)=(V119-V5)/2/Ut VN 502 0 0 ********* orientation isink isource ******* VINT2 503 0 5 FCOPY 503 504 VOUT 1 DCOPYP 504 505 MDTH 400E-9 VCOPYP 505 0 0 DCOPYN 506 504 MDTH 400E-9 VCOPYN 0 506 0 *************************** F2PP 19 5 poly(2) VCOPYP VP 0 0 0 0 0.5!multiply I(vout)*I(VP)=Iout*(V119V4)/2/Ut F2PN 19 5 poly(2) VCOPYP VN 0 0 0 0 0.5 !multiply I(vout)*I(VN)=Iout*(V119V5)/2/Ut F2NP 19 5 poly(2) VCOPYN VP 0 0 0 0 1.75 !multiply I(vout)*I(VP)=Iout*(V119V4)/2/Ut F2NN 19 5 poly(2) VCOPYN VN 0 0 0 0 1.75 !multiply I(vout)*I(VN)=Iout*(V119V5)/2/Ut * COMPENSATION ************ CC 19 119 25p * OUTPUT*********** DOPM 19 22 MDTH 400E-12 DONM 21 19 MDTH 400E-12 HOPM 22 28 VOUT 6.250000E+02 VIPM 28 4 5.000000E+01 HONM 21 27 VOUT 6.250000E+02 VINM 5 27 5.000000E+01 VOUT 3 23 0 ROUT 23 19 6 COUT 3 5 1.300000E-10 DOP 19 25 MDTH 400E-12 VOP 4 25 1.052 DON 24 19 MDTH 400E-12 VON 24 5 1.052 .ENDS 10/16 Doc ID 5560 Rev 4 TS921 5 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 5560 Rev 4 11/16 Package information TS921 Figure 13. DIP8 package outline Table 7. DIP8 package mechanical data Dimensions Symbol mm Min. A Typ. Max. Min. 3.3 Typ. Max. 0.130 a1 0.7 B 1.39 1.65 0.055 0.065 B1 0.91 1.04 0.036 0.041 b b1 0.028 0.5 0.38 0.020 0.5 D 0.015 0.020 9.8 0.386 E 8.8 0.346 e 2.54 0.100 e3 7.62 0.300 e4 7.62 0.300 F 7.1 0.280 I 4.8 0.189 L Z 12/16 inch 3.3 0.44 0.130 1.6 Doc ID 5560 Rev 4 0.017 0.063 TS921 Package information Figure 14. SO-8 package outline 00160 23/C Table 8. SO-8 package mechanical data Dimensions Symbol mm Min. Typ. inch Max. Min. Typ. Max. A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.04 0.010 A2 1.10 1.65 0.043 0.065 B 0.33 0.51 0.013 0.020 C 0.19 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 e 1.27 0.050 H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 k ddd 8° (max.) 0.1 Doc ID 5560 Rev 4 0.04 13/16 Package information TS921 Figure 15. TSSOP8 package outline 0079397/D Table 9. TSSOP8 package mechanical data Dimensions Symbol mm Min. Typ. A Max. Min. Typ. 1.2 A1 0.05 A2 0.80 b Max. 0.047 0.15 0.002 1.05 0.031 0.19 0.30 0.007 0.012 c 0.09 0.20 0.004 0.008 D 2.90 3.00 3.10 0.114 0.118 0.122 E 6.20 6.40 6.60 0.244 0.252 0.260 E1 4.30 4.40 4.50 0.169 0.173 0.177 e 1.00 0.65 K 0° L 0.45 L1 14/16 inch 0.60 0.006 0.039 0.041 0.0256 8° 0° 0.75 0.018 1 Doc ID 5560 Rev 4 8° 0.024 0.039 0.030 TS921 6 Revision history Revision history Table 10. Document revision history Date Revision Feb. 2001 1 Initial release - Product in full production. Dec. 2004 2 Modifications on AMR table page 2 (explanation of Vid and Vi limits, ESD, MM and CDM values added, Rthja added) 3 The following changes were made in this revision: PPAP references inserted in the datasheet see Table 1. Data in tables Electrical characteristics on page 4 reformatted for easier use. Thermal Resistance Junction to Case added in Table 2 on page 3. 4 Updated Figure on page 1(replaced VCC- by VDD). Updated (renamed) Table 1, removed TS921IYD/IYDT devices from Table 1. Moved Description to page 2. Updated Figure 1 to Figure 4, Figure 6 to Figure 12 (added conditions to titles). Updated ECOPACK text and reformatted Section 5 (added Table 7 to Table 9, reversed order of figures and tables). Minor corrections throughout document. Nov. 2005 19-Sep-2012 Changes Doc ID 5560 Rev 4 15/16 TS921 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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