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TSH310ID

TSH310ID

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOIC-8

  • 描述:

    IC OPAMP CFA 1 CIRCUIT 8SO

  • 数据手册
  • 价格&库存
TSH310ID 数据手册
TSH310 400µA High-Speed Operational Amplifier Pin Connections (top view) ■ OptimWattTM device featuring ultra-low consumption, 2mW, and low quiescent current, 400µA ■ Bandwidth: 120MHz (Gain=2) ■ Slew rate: 115V/µs ■ Specified on 1kΩ ■ Input noise: 7.5nV/√Hz ■ Tested on 5V power supply OUT 1 5 +VCC -VCC 2 +- ) (s The TSH310 is a single operator available in SO8 and the tiny SOT23-5 plastic package, saving board space as well as providing excellent thermal performances. ct du Applications ■ ■ ■ ■ e t e ol o r P +IN 3 4 -IN t e l o SOT23-5 s b O 8 NC NC 1 -IN 2 _ 7 +VCC +IN 3 + 6 OUT 5 NC -VCC 4 SO8 Battery-powered and high-speed systems Communication & video test equipment Portable medical instrumentation ADC drivers s b O u d o r P e Description The TSH310 is a very low-power, high-speed operational amplifier. A bandwidth of 120MHz is achieved while drawing only 400µA of quiescent current. This low-power characteristic is particularly suitable for high-speed, batterypowered equipment requiring dynamic performance. ) s ( ct Order Codes Part Number TSH310ILT TSH310ID TSH310IDT Temperature Range Package Conditioning Marking -40°C to +85°C SOT23-5 SO-8 SO-8 Tape&Reel Tube Tape&Reel K304 TSH310I TSH310I Note: OptimWattTM is an STMIcroelectronics registered trademark that applies to products with specific features that optimize energy efficiency. December 2004 Revision 2 1/19 TSH310 Absolute Maximum Ratings 1 Absolute Maximum Ratings Table 1: Key parameters and their absolute maximum ratings Symbol VCC Vid Vin Parameter Supply Voltage 1 Differential Input Voltage2 Range3 Value Unit 6 V +/-0.5 V Input Voltage Operating Free Air Temperature Range +/-2.5 V Toper -40 to +85 °C Tstg Storage Temperature -65 to +150 °C 150 °C Tj Rthja Rthjc Pmax Maximum Junction Temperature Thermal Resistance Junction to Ambient SOT23-5 SO8 Thermal Resistance Junction to Case SOT23-5 SO8 250 150 80 28 Maximum Power Dissipation4 (@Ta=25°C) for Tj=150°C SOT23-5 SO8 HBM: Human Body Model 5 (pins 1, 4, 5, 6, 7 and 8) HBM: Human Body Model (pins 2 and 3) ESD MM: Machine Model 6 (pins 1, 4, 5, 6, 7 and 8) MM: Machine Model (pins 2 and 3) CDM: Charged Device Model (pins 1, 4, 5, 6, 7 and 8) CDM: Charged Device Model (pins 2 and 3) Latch-up Immunity ) (s t c u u d o °C/W r P e mW 2 kV 0.5 kV t e l o s b O ) s ( ct °C/W 500 830 200 V 60 1.5 1.5 200 V kV kV mA 1) All voltages values are measured with respect to the ground pin. d o r 2) Differential voltage are non-inverting input terminal with respect to the inverting input terminal. 3) The magnitude of input and output voltage must never exceed VCC +0.3V. P e 4) Short-circuits can cause excessive heating. Destructive dissipation can result from short circuit on amplifiers. t e l o 5) Human body model, 100pF discharged through a 1.5kΩ resistor into pMin of device. 6) This is a minimum Value. Machine model ESD, a 200pF cap is charged to the specified voltage, then discharged directly into the IC with no external series resistor (internal resistor < 5Ω), into pin to pin of device. s b O Table 2: Operating conditions Symbol Parameter VCC Supply Voltage 1 Vicm Common Mode Input Voltage 1) Tested in full production at 5V (±2.5V) supply voltage. 2/19 Value Unit 4.5 to 5.5 V -Vcc+1.5V, +Vcc-1.5V V Electrical Characteristics TSH310 2 Electrical Characteristics Table 3: Electrical characteristics for VCC = ±2.5Volts, Tamb = 25°C (unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. 6.5 Unit DC performance Vio Input Offset Voltage Offset Voltage between both inputs Tamb 1.7 Tmin. < Tamb < Tmax. 2.1 ∆Vio Vio drift vs. Temperature Tmin. < Tamb < Tmax. 4 Iib+ Non Inverting Input Bias Current Tamb DC current necessary to bias the input + Tmin. < Tamb < Tmax. 3.1 Iib- Inverting Input Bias Current Tamb DC current necessary to bias the input Tmin. < Tamb < Tmax. 0.1 CMR SVR Common Mode Rejection Ratio ∆Vic = ±1V 20 log (∆Vic/∆Vio ) Tmin. < Tamb < Tmax. Supply Voltage Rejection Ratio ∆Vcc= 3.5V to 5V 20 log (∆Vcc/∆Vio) Tmin. < Tamb < Tmax. Power Supply Rejection Ratio AV = +1, ∆Vcc=±100mV at 1kHz 20 log (∆Vcc/∆Vout) PSR Positive Supply Current DC consumption with no input signal ICC No load ) (s Dynamic performance and output characteristics Bw s b O -3dB Bandwidth Frequency where the gain is 3dB below the DC gain AV Note: Gain Bandwidth Product criterion is not applicable for Current-FeedbackAmplifiers Small Signal Vout=20mVp-p RL = 1kΩ AV = +1, Rfb = 3kΩ AV = +2, Rfb = 3kΩ AV = +10, Rfb = 510Ω VOH VOL P e let o s b O SR t e l o RL = 1kΩ,Vout = ±1V -82 -79 -50 0.6 µA dB dB dB 46 400 530 µA 1.45 MΩ 1.36 MΩ 230 120 26 MHz Tmin. < Tamb < Tmax. 80 Gain Flatness @ 0.1dB Small Signal Vout=20mVp-p Band of frequency where the gain varia- AV = +2, RL = 1kΩ tion does not exceed 0.1dB Slew Rate Maximum output speed of sweep in large signal Vout = 2Vp-p, AV = +2, RL = 1kΩ High Level Output Voltage RL = 1kΩ Low Level Output Voltage u d o r P e -65 µA ) s ( ct 5 -61 -59 Transimpedance Output Voltage/Input Current Gain in open loop of a CFA. For a VFA, the analog of this feature is the Open Loop Gain (AVD) d o r 12 0.3 t c u ROL µV/°C 3.5 -57 Tmin. < Tamb < Tmax. mV 25 75 115 V/µs 1.55 1.65 V Tmin. < Tamb < Tmax. 1.58 RL = 1kΩ -1.66 Tmin. < Tamb < Tmax. -1.60 -1.55 V 3/19 TSH310 Electrical Characteristics Table 3: Electrical characteristics for VCC = ±2.5Volts, Tamb = 25°C (unless otherwise specified) Symbol Iout Parameter Test Condition Isink Short-circuit Output current coming in the op-amp. See fig-8 for more details Output to GND Isource Output current coming out from the opamp. See fig-11 for more details Output to GND Min. Typ. 70 110 Tmin. < Tamb < Tmax. Max. Unit 100 60 mA Tmin. < Tamb < Tmax. 100 85 Noise and distortion eN iN SFDR Equivalent Input Noise Voltage see application note on page 13 F = 100kHz Equivalent Input Noise Current (+) see application note on page 13 F = 100kHz Equivalent Input Noise Current (-) see application note on page 13 F = 100kHz Spurious Free Dynamic Range The highest harmonic of the output spectrum when injecting a filtered sine wave Vout = 2Vp-p, AV = +2, RL = 1kΩ F = 1MHz F = 10MHz VCC (V) Gain u d o +2 Pr -2 e t e l o s b O 4/19 +1 -1 pA/√Hz pA/√Hz r P e let o s b -O u d o -87 -55 dBc dBc 0.1dB Bw (MHz) 26 4 510 23 4 3k 120 6 1.5k 80 10 3k 210 5 1.3k 120 60 510 -10 13 -3dB Bw (MHz) ) s ( ct +10 ±2.5 Rfb (Ω) nV/√Hz 6 Table 4: Closed-loop gain and feedback components ) s ( ct 7.5 Electrical Characteristics TSH310 Figure 1: Frequency Response, positive Gain 24 22 20 24 22 20 Gain=+10 12 10 8 Gain=+4 Gain=-4 Gain=+2 12 10 8 Gain=-2 6 4 2 0 -2 -4 -6 -8 6 4 2 0 -2 Gain=+1 -4 -6 -8 Small Signal Vcc=5V Load=1kΩ -10 1M Gain=-10 18 16 14 Gain (dB) 18 16 14 Gain (dB) Figure 4: Frequency response, negative gain 10M Gain=-1 -10 1M 100M 10M r P e t e l o 6,2 6,1 6,0 12,0 s b O Gain Flatness (dB) Gain Flatness (dB) 5,9 11,9 )- 11,8 s ( t c 11,7 11,6 11,5 1M Frequency (Hz) e t e ol u d o Pr 10M s b O 5,8 5,7 5,6 5,5 5,4 5,3 5,2 5,1 Gain=+2 Small Signal Vcc=5V Load=1k Ω 5,0 1M 100M Figure 3: Frequency response vs. capa-load 10 u d o Figure 5: Gain flatness, gain=+2 12,1 Gain=+4 Small Signal Vcc=5V Load=1k Ω 100M Frequency (Hz) Frequency (Hz) Figure 2: Gain Flatness, gain=+4 ) s ( ct Small Signal Vcc=5V Load=1kΩ 10M 100M Frequency (Hz) Figure 6: Step response vs. capa-load 3 C-Load=10pF R-iso=0 8 6 Gain (dB) C-Load=1pF R-iso=0 2 0 -2 -4 Vout + R-iso - 3k -6 -8 -10 1M C-Load=22pF R-iso=47ohms Vin 3k Output step (Volt) 2 4 C-Load=1pF, 10pF and 22pF 1 Vin - 3k 0 1k Vout + 3k C-Load 1k C-Load Gain=+2, Vcc=5V, Small Signal Gain=+2, Vcc=5V, Small Signal 10M Frequency (Hz) 100M -1 0,0 5,0n 10,0n 15,0n 20,0n 25,0n 30,0n Time (ns) 5/19 TSH310 Electrical Characteristics Figure 7: Slew rate Figure 10: Quiescent current vs. Vcc 2,0 400 1,5 200 Icc (micro-A) Output Response (V) Icc(+) 1,0 0 Gain=+2 Vcc=5V Inputs to ground, no load -200 0,5 Gain=+2 Vcc=5V Load=1kΩ 0,0 -10ns -5ns 0s 5ns 10ns 15ns 1,25 20ns 1,50 1,75 Figure 8: Isink +2.5V VOL without load -25 Isink _ V Isink (mA) 100 RG Amplifier in open loop without load Isource (mA) - 2.5V )- 75 s ( t c 50 du 25 0 -2,0 -1,5 o r P -1,0 -0,5 s b O -75 +2.5V VOH +1V -100 RG -125 -150 0,0 V 0,5 Amplifier in open loop without load 1,0 1,5 2,0 Figure 12: Input voltage noise vs. frequency s b O 10,0 Gain=32dB Rg=12ohms Rfb=510ohms non-inverting input in short-circuit Vcc=5V 9,5 3,5 9,0 en (nV/VHz) Max. Output Amplitude (Vp-p) Isource _ V (V) 3,0 8,5 8,0 2,5 Gain=+2 Vcc=5V Load=1k Ω 2,0 10 100 1k Load (ohms) 6/19 without load + - 2.5V 0,0 Figure 9: Output amplitude vs. load 4,0 u d o -50 V (V) e t e ol 2,50 t e l o 0 150 + 2,25 r P e Figure 11: Isource -1V 2,00 +/-Vcc (V) Time (ns) 125 ) s ( ct Icc(-) -400 10k 100k 7,5 7,0 100 1k 10k 100k Frequency (Hz) 1M 10M 100M Electrical Characteristics TSH310 Figure 13: Distortion vs. output amplitude Figure 16: CMR vs. temperature 66 -20 -25 -30 64 -40 HD2 CMR (dB) HD2 & HD3 (dBc) -35 -45 -50 -55 62 60 -60 Gain=+2 Vcc=5V F=10MHz Load=1k Ω -65 HD3 -70 -75 58 56 -80 0 1 2 3 -40 4 -20 0 Figure 14: Output amplitude vs. frequency 4 SVR (dB) 3 )- s ( t c 2 du 1M o r P 10M 120 80 100 120 100 120 u d o 80 75 Gain=+1 Vcc=5V Load=100Ω 70 100M -40 -20 0 20 40 60 Temperature (°C) Figure 15: Bandwidth vs. temperature Figure 18: Slew-Rate vs. temperature s b O 200 100 s b O Frequency (Hz) e t e ol 80 t e l o 85 0 100k 60 r P e 90 Gain=+2 Vcc=5V Load=1k Ω 40 Figure 17: SVR vs. temperature 5 1 20 Temperature (°C) Output Amplitude (Vp-p) Vout max. (Vp-p) ) s ( ct Gain=+1 Vcc=5V Load=100Ω 140 190 neg. SR 130 180 SR (V/micro-s) 170 Bw (MHz) 160 150 140 130 120 pos. SR 110 100 120 110 100 Gain=+1 Vcc=5V Load=100Ω 90 90 Gain=+1 Vcc=5V Load=100Ω 80 -40 -20 0 20 40 60 Temperature (°C) 80 100 120 -40 -20 0 20 40 60 80 Temperature (°C) 7/19 TSH310 Electrical Characteristics Figure 19: ROL vs. temperature Figure 22: VOH & VOL vs. temperature 1,60 2 1,55 VOH & OL (V) 1,45 ROL (MΩ) VOH 1 1,50 1,40 1,35 0 -1 VOL -2 1,30 1,25 -4 -40 1,20 -40 -20 0 20 40 60 80 100 120 -20 0 t e l o ICC (micro A) IBIAS (µA) )- s ( t c -1 Gain=+1 Vcc=5V Load=100Ω -3 -20 0 20 e t e ol u d o Pr 40 60 Temperature (°C) 80 100 0 -200 Icc(-) -400 -600 -800 Gain=+1 Vcc=5V no Load in(+) and in(-) to GND -1000 -40 120 -20 0 20 40 60 80 100 120 80 100 120 Temperature (°C) Figure 21: Vio vs. temperature Figure 24: Iout vs. temperature s b O 2,0 s b O 200 Ib(-) -40 u d o 80 Icc(+) Ib(+) 1 -2 60 r P e 400 0 40 Figure 23: Icc vs. temperature 3 2 20 Temperature (°C) Temperature (°C) Figure 20: I-bias vs. temperature ) s ( ct Gain=+1 Vcc=5V Load=100Ω -3 Open Loop Vcc=5V 200 150 1,8 100 Isource 1,6 1,4 Iout (mA) VIO (mV) 50 1,2 0 -50 Isink -100 1,0 -150 0,8 0,6 -200 Open Loop Vcc=5V Load=100Ω -250 Output: short-circuit Gain=+1 Vcc=5V -300 -40 -20 0 20 40 60 Temperature (°C) 8/19 80 100 120 -40 -20 0 20 40 60 Temperature (°C) Evaluation Boards TSH310 3 Evaluation Boards An evaluation board kit optimized for high-speed operational amplifiers is available (order code: KITHSEVAL/STDL). The kit includes the following evaluation boards, as well as a CD-ROM containing datasheets, articles, application notes and a user manual: l SOT23_SINGLE_HF BOARD: Board for the evaluation of a single high-speed op-amp in SOT23-5 package. l SO8_SINGLE_HF: Board for the evaluation of a single high-speed op-amp in SO8 package. l SO8_DUAL_HF: Board for the evaluation of a dual high-speed op-amp in SO8 package. l SO8_S_MULTI: Board for the evaluation of a single high-speed op-amp in SO8 package in inverting ) s ( ct and non-inverting configuration, dual and single supply. l SO14_TRIPLE: Board for the evaluation of a triple high-speed op-amp in SO14 package with video application considerations. u d o Board material: r P e l 2 layers ε l FR4 ( r=4.6) t e l o l epoxy 1.6mm l copper thickness: 35µm Figure 25: Evaluation kit for high-speed op-amps ) (s s b O t c u d o r P e t e l o s b O 9/19 TSH310 Power Supply Considerations 4 Power Supply Considerations Correct power supply bypassing is very important for optimizing performance in high-frequency ranges. Bypass capacitors should be placed as close as possible to the IC pins to improve high-frequency bypassing. A capacitor greater than 1µF is necessary to minimize the distortion. For better quality bypassing, a capacitor of 10nF can be added using the same implementation conditions. Bypass capacitors must be incorporated for both the negative and the positive supply. For example: on the SO8_SINGLE_HF board, these capacitors are C6, C7, C8, C9. Figure 26: Circuit for power supply bypassing +VCC ) s ( ct 10microF + u d o 10nF r P e + - t e l o 10nF s b O 10microF + ) (s -VCC t c u Single power supply In the event that a single supply system is used, new biasing is necessary to assume a positive output dynamic range between 0V and +VCC supply rails. Considering the values of VOH and V OL, the amplifier will provide an output dynamic from +0.9V to +4.1V on 1kΩ load. d o r P e t e l o The amplifier must be biased with a mid-supply (nominally +VCC/2), in order to maintain the DC component of the signal at this value. Several options are possible to provide this bias supply, such as a virtual ground using an operational amplifier or a two-resistance divider (which is the cheapest solution). A high resistance value is required to limit the current consumption. On the other hand, the current must be high enough to bias the non-inverting input of the amplifier. If we consider this bias current (55µA max.) as the 1% of the current through the resistance divider to keep a stable mid-supply, two resistances of 470Ω can be used. s b O The input provides a high pass filter with a break frequency below 10Hz which is necessary to remove the original 0 volt DC component of the input signal, and to fix it at +VCC/2. Figure 27 illustrates a 5V single power supply configuration for the SO8_SINGLE evaluation board (see Evaluation Boards on page 9). 10/19 Power Supply Considerations TSH310 A capacitor CG is added in the gain network to ensure a unity gain in low frequency to keep the right DC component at the ouput. CG contributes to a high-pass filter with Rfb//RG and its value is calculated with a consideration of the cut-off frequency of this low-pass filter. Figure 27: Circuit for +5V single supply +5V 10µF + IN +5V Rin 1kΩ OUT R1 470Ω 1kΩ RG + 1µF 10nF t e l o + CG ) (s u d o r P e Rfb R2 470Ω ) s ( ct _ s b O t c u d o r P e t e l o s b O 11/19 TSH310 Noise Measurements 5 Noise Measurements The noise model is shown in Figure 28, where: l eN: input voltage noise of the amplifier l iNn: negative input current noise of the amplifier l iNp: positive input current noise of the amplifier Figure 28: Noise model ) s ( ct + iN+ R3 output HP3577 Input noise: 8nV/√Hz _ N3 iN- R1 N1 The thermal noise of a resistance R is: ) (s t c u d o r where ∆F is the specified bandwidth. t e l o R2 N2 u d o r P e eN s b O 4kTR ∆ F P e On a 1Hz bandwidth the thermal noise is reduced to let o s b 4kTR where k is the Boltzmann's constant, equal to 1,374.10-23J/°K. T is the temperature (°K). The output noise eNo is calculated using the Superposition Theorem. However eNo is not the simple sum of all noise sources, but rather the square root of the sum of the square of each noise source, as shown in Equation 1: O eNo = eNo 12/19 2 2 2 2 2 2 2 V 1 + V2 + V3 + V4 + V5 + V6 2 2 2 2 2 2 2 = eN × g + iNn × R 2 + iNp × R 3 × g 2 ------+R R1 2 22 × 4 kTR 1 + 4 kTR 2 + 1 + R ------- × 4 kTR 3 R1 Equation 1 Equation 2 Noise Measurements TSH310 The input noise of the instrumentation must be extracted from the measured noise value. The real output noise value of the driver is: 2 2 ( Measured ) – ( instrumentation ) eNo = Equation 3 The input noise is called the Equivalent Input Noise as it is not directly measured but is evaluated from the measurement of the output divided by the closed loop gain (eNo/g). After simplification of the fourth and the fifth term of Equation 2 we obtain: eNo 2 2 2 2 2 2 2 2 = eN × g + iNn × R 2 + iNp × R 3 × g 2 + g × 4 k TR 2 + 1 + R ------R1 2 × 4 kTR 3 ) s ( ct Equation 4 u d o Measurement of the input voltage noise eN If we assume a short-circuit on the non-inverting input (R3=0), from Equation 4 we can derive: eNo = 2 2 2 2 eN × g + iNn × R 2 + g × 4 kTR 2 t e l o r P e Equation 5 In order to easily extract the value of eN, the resistance R2 will be chosen to be as low as possible. In the other hand, the gain must be large enough: s b O R3=0, gain: g=100 ) (s Measurement of the negative input current noise iNn To measure the negative input current noise iNn, we set R3=0 and use Equation 5. This time the gain must be lower in order to decrease the thermal noise contribution: od t c u r P e R3=0, gain: g=10 Measurement of the positive input current noise iNp To extract iNp from Equation 3, a resistance R3 is connected to the non-inverting input. The value of R3 must be chosen in order to keep its thermal noise contribution as low as possible against the iNp contribution: t e l o bs R3=100Ω, gain: g=10 O 13/19 TSH310 Intermodulation Distortion Product 6 Intermodulation Distortion Product The non-ideal output of the amplifier can be described by the following series: 2 n Vout = C + C V + C V in + … C V in 0 1 in 2 n due to non-linearity in the input-output amplitude transfer, where the input is Vin=Asinωt, C0 is the DC component, C1(Vin) is the fundamental and Cn is the amplitude of the harmonics of the output signal Vout. A one-frequency (one-tone) input signal contributes to harmonic distortion. A two-tone input signal contributes to harmonic distortion and to the intermodulation product. The study of the intermodulation and distortion for a two-tone input signal is the first step in characterizing the driving capability of multi-tone input signals. ) s ( ct In this case: V in u d o = A sin ω t + A sin ω t 1 2 r P e then: V = C + C ( A sin ω t + A sin ω t ) + C ( A sin ω t + A sin ω t ) 1 2 1 2 2 out 0 1 2 … + C n ( A sin ω 1 t + A sin ω 2 t ) n t e l o From this expression, we can extract the distortion terms, and the intermodulation terms form a single sine wave: second-order intermodulation terms IM2 by the frequencies (ω1-ω2) and (ω1+ω2) with an amplitude of C2A2 and third-order intermodulation terms IM3 by the frequencies (2ω1-ω2), (2ω1+ω2), (− ω1+2ω2) and (ω1+2ω2) with an amplitude of (3/4)C3A3. ) (s s b O The measurement of the intermodulation product of the driver is achieved by using the driver as a mixer by a summing amplifier configuration (see Figure 29). In this way, the non-linearity problem of an external mixing device is avoided. t c u d o r Figure 29: Inverting summing amplifier (using evaluation board SO8_S_MULTI) P e t e l o bs Vin1 R1 Vin2 R2 Rfb _ O Vout + R 14/19 1kΩ The Bias of an Inverting Amplifier TSH310 7 The Bias of an Inverting Amplifier A resistance is necessary to achieve a good input biasing, such as resistance R shown in Figure 30. The magnitude of this resistance is calculated by assuming the negative and positive input bias current. The aim is to compensate for the offset bias current, which could affect the input offset voltage and the output DC component. Assuming Ib-, Ib+, Rin, Rfb and a zero volt output, the resistance R will be: R in × R fb R = ---------------------R in + R fb ) s ( ct Figure 30: Compensation of the input bias current u d o Rfb Ib- Rin r P e Vcc+ _ Output + Vcc- Ib+ R ) (s t e l o Load s b O t c u d o r P e t e l o s b O 15/19 TSH310 Active Filtering 8 Active Filtering Figure 31: Low-pass active filtering, Sallen-Key C1 R2 R1 + IN OUT C2 _ 1kΩ ) s ( ct Rfb RG u d o From the resistors Rfb and RG we can directly calculate the gain of the filter in a classical non-inverting amplification configuration: A R fb g = 1 + ---------V = R g We assume the following expression as the response of the system: T t e l o s b O Vout g jω = ------------------- = --------------------------------------------jω Vin 2 jω j ω (j ω ) 1 + 2 ζ ------- + -------------ωc 2 ω c ) (s r P e t c u The cut-off frequency is not gain-dependent and so becomes: od r P e ω 1 c = ------------------------------------R1 R2C1C2 The damping factor is calculated by the following expression: t e l o s b O 1 ζ = --- ω ( C R + C R + C R – C R g ) 1 2 2 1 1 1 2 c 1 1 The higher the gain, the more sensitive the damping factor is. When the gain is higher than 1, it is preferable to use some very stable resistor and capacitor values. In the case of R1=R2=R: R fb 2C2 – C ---------1R g ζ = -----------------------------------2 C C 1 2 Due to a limited selection of values of capacitors in comparison with resistors, we can fix C1=C2=C, so that: R fb 2R2 – R ---------1R g ζ = -----------------------------------2 R R 1 2 16/19 Package Mechanical Data TSH310 9 Package Mechanical Data SOT23-5L MECHANICAL DATA mm. mils DIM. MIN. TYP MAX. MIN. TYP. MAX. A 0.90 1.45 35.4 57.1 A1 0.00 0.15 0.0 5.9 A2 0.90 1.30 35.4 51.2 b 0.35 0.50 13.7 19.7 C 0.09 0.20 3.5 D 2.80 3.00 110.2 E 2.60 3.00 102.3 E1 1.50 1.75 59.0 e 0 .95 e1 1.9 L )- 0.35 0.55 u d o 7.8 r P e t e l o s b O 13.7 ) s ( ct 118.1 118.1 68.8 37.4 74.8 21.6 s ( t c u d o r P e t e l o s b O 17/19 TSH310 Package Mechanical Data SO-8 MECHANICAL DATA mm. DIM. MIN. inch TYP MAX. MIN. TYP. MAX. A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.04 0.010 A2 1.10 1.65 0.043 0.065 B 0.33 0.51 0.013 0.020 C 0.19 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 e 0.050 H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.40 1.27 k 0.050 let 0.1 o s b u d o r P e 0.016 8˚ (max.) ddd 0.04 O ) s ( t c u d o r P e t e l o s b O 18/19 ) s ( ct 0.157 1.27 0016023/C Revision History TSH310 10 Revision History Date Revision Description of Changes 01 Oct 2004 1 First release corresponding to Preliminary Data version of datasheet. December 2004 2 Release of mature product datasheet. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Repubic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 19/19
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