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TSH321I

TSH321I

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    TSH321I - WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
TSH321I 数据手册
® TSH321 WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER . . . . . . LOW DISTORTION GAIN BANDWIDTH PRODUCT : 300MHz GAIN OF 2 STABILITY SLEW RATE : 400V/µs VERY FAST SETTLING TIME : 60ns (0.1%) VERY HIGH INPUT IMPEDANCE TSH321I -40 C, 125 C o o • • PIN CONNECTIONS (top view) Offset Null 1 Inverting Input Non-inverting Input V CC 1 2 3 4 8 Offset Null 2 7 VCC+ 6 5 Output N.C. June 1998 1/6 321-01.EPS 321-01.TBL DESCRIPTION: The TSH321 is a wideband monolithic operational amplifier, requiring a minimum close loop gain of 2 for stability. The TSH321 features extremely high input impedance (typically greater than 1012Ω) allowing direct interfacing with high impedance sources. Low distortion, wide bandwidth and high linearity make this amplifier suitable for RF and video applications. Short circuit protection is provided by an internal current-limiting circuit. The TSH321 has internal electrostatic discharge (ESD) protection circuits and fulfills MILSTD883CClass2. N DIP8 (Plastic Package) D SO8 (Plastic Micropackage) ORDER CODES Part Number Temperature Range Package N D TSH321 SCHEMATIC DIAGRAM 7 V CC + non inverting input 3 Internal Vref 6 output Cc 2 inverting input 1 Offset N1 8 Offset N2 INPUT OFFSET VOLTAGE NULL CIRCUIT TSH321 N1 N2 100kΩ V CC ABSOLUTE MAXIMUM RATINGS Symbol VCC Vid Vi Iin Toper Supply Voltage Differential Input Voltage Input Voltage Range Current On Offset Null Pins Operating Free-Air Temperature Range TSH321I Parameter Value ±7 ±5 ±5 ± 20 -40oC, 125oC Unit V V V mA o 321-02.TBL 321-03.TBL 321-03.EPS C OPERATING CONDITIONS Symbol VCC Vic Supply Voltage Common Mode Input Voltage Range Parameter Value ± 3 to ± 6 VCC- to VCC+ -3 Unit V V 2/6 321-02.EPS 4 VCC- TSH321 ELECTRICAL CHARACTERISTICS VCC = ± 5V, Tamb = 25oC (unless otherwise specified) Symbol Vio DV io Iib Iio ICC Parameter Input Offset Voltage Tmin ≤ Tamb ≤ Tmax. Input Offset Voltage Drift Tmin ≤ Tamb ≤ Tmax. Input Bias Current Input Offset Current Supply Current, no load Min. Typ. 0.5 Max. 10 12 Unit mV µV/oC 300 200 30 28 40 32 V/V 800 300 200 -5 to +2 60 50 ±3 ± 2.8 ± 2.9 ± 2.7 ± 50 1300 850 650 -5.5 to +2.5 100 70 +3.5 -3.7 +3.3 -3.5 pA pA mA 10 2 2 VCC = ± 5V VCC = ± 3V VCC = ±6V VCC = ± 5V 23 21 25 Avd Tmin ≤ Tamb ≤ Tmax. Large Signal Voltage Gain Vo = ±2.5V Vicm CMR SVR Vo RL = ∞ RL= 100Ω RL = 50Ω Input Common Mode Voltage Range Common Mode Rejection Ratio Vic = Vicm min. Supply Voltage Rejection Ratio VCC = ± 5V to ± 3V Output Voltage RL = 100Ω RL = 50Ω Tmin ≤ Tamb ≤ Tmax. RL = 100Ω RL = 50Ω V dB dB V Io GBP SR en Kov ts tr, tf td ∅m THD FPB 26 64 Note 1 : Note 2 : See test waveform figure Full power bandwidth = SR Π Vopp 3/6 321-04.TBL Output Short Circuit Current Vid = ±1V, Vo = 0V Gain Bandwidth Product AVCL = 100, R L = 100Ω, CL = 15pF, f = 7.5MHz Slew Rate Vin = ± 1V, AVCL = 2 RL = 100Ω, CL = 15pF Equivalent Input Voltage Noise R S = 50Ω fo = 1kHz fo = 10kHz fo = 100kHz fo = 1MHz Overshoot Vin = ± 1V AVCL = 2, RL = 100Ω, CL = 15pF Settling Time 0.1% - (note 1) Vin = ± 1V, AVCL = -1 Rise and Fall Time - (note 1) Vin = ±100mV, AVCL = 2 Delay Time - (note 1) Vin = ±100mV, AVCL = 2 Phase Margin AVM = 2, RL = 100Ω, CL = 15pF Total Harmonic Distortion AVCL = 10, f = 1KHz, Vo = ± 2.5V, no load Full Power Bandwidth - (note 2) Vo = 5Vpp, R L = 100Ω Vo = 2Vpp, R L = 100Ω ± 100 300 mA MHz V/µs nV  Hz √ 200 400 20 18.2 18.1 18.2 15 % ns 60 ns 2 ns 2 Degrees 45 % 0.02 MHz TSH321 TEST WAVEFORM EVALUATION CIRCUIT +5V 10µF 50Ω 10nF ts 0.1% of edge amplitude Input 50Ω Output 1kΩ 10nF 90% td 50% tr Vin 10% -5V 10µF 1kΩ 321-05.EPS 321-04.EPS CF PRINTED CIRCUIT LAYOUT As for any high frequency device, a few rules must be observed when designing the PCB to get the best performances from this high speed op amp. From the most to the least important points : • Each power supply lead has to be bypassed to ground with a 10nF ceramic capacitor very close to the device and a 10µF tantalum capacitor. inductance. • Use small resistor values to decrease time constant with parasitic capacitance. • Choose component sizes as small as possible (SMD). • On output, decrease capacitor load so as to avoid circuit stability being degraded which may cause oscillation. One can also add a serial resistor in order to minimise its influence. • To provide low inductance and low resistance common return, use a ground plane or common point return for power and signal. • All leads must be wide and as short as possible especially for op amp inputs. This is in order to decrease parasitic capacitance and • One can add in parallel with feedback resistor a few pF ceramic capacitor CF adjusted to optimize the settling time. 4/6 TSH321 PACKAGE MECHANICAL DATA 8 PINS - PLASTIC DIP Dimensions A a1 B b b1 D E e e3 e4 F i L Z Min. 0.51 1.15 0.356 0.204 7.95 Millimeters Typ. 3.32 Max. Min. 0.020 0.045 0.014 0.008 0.313 Inches Typ. 0.131 Max. 1.65 0.55 0.304 10.92 9.75 2.54 7.62 7.62 6.6 5.08 3.81 1.52 0.065 0.022 0.012 0.430 0.384 0.100 0.300 0.300 0260 0.200 0.150 0.060 5/6 DIP8.TBL 3.18 0.125 PM-DIP8.EPS TSH321 PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICROPACKAGE (SO) Dimensions A a1 a2 a3 b b1 C c1 D E e e3 F L M S Min. 0.1 0.65 0.35 0.19 0.25 4.8 5.8 Millimeters Typ. Max. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 5.0 6.2 o Min. 0.004 0.026 0.014 0.007 0.010 0.189 0.228 Inches Typ. Max. 0.069 0.010 0.065 0.033 0.019 0.010 0.020 0.197 0.244 1.27 3.81 3.8 0.4 4.0 1.27 0.6 8 (max.) o 0.050 0.150 0.150 0.016 0.157 0.050 0.024 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publ ication supersedes and replaces all infor mation previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. ORDER CODE : 6/6 SO8.TBL PM-SO8.EPS
TSH321I
1. 物料型号: - TSH321I,表示该型号适用于-40°C至125°C的温度范围。

2. 器件简介: - TSH321是一款宽带宽单运算放大器,需要至少2的闭环增益以确保稳定性。它具有极低的失真、宽带宽和高线性度,适用于射频和视频应用。内部有过流保护电路,并且具有防静电放电保护功能,满足MILSTD883C Class 2标准。

3. 引脚分配: - 文档提供了TSH321的引脚图,展示了引脚的物理布局。

4. 参数特性: - 输入偏置电压:0.5mV至12mV - 输入偏置电压漂移:10μV/°C - 输入偏置电流:2pA至300pA - 电源电流:23mA至40mA(无负载) - 大信号电压增益:800至1300V/μs - 共模输入电压范围:-5.5V至+2.5V - 共模抑制比:60dB至100dB - 电源电压抑制比:50dB至70dB - 输出电压:±3.5V(负载100Ω),±3V(负载50Ω)

5. 功能详解: - TSH321具有非常高的输入阻抗(通常大于10^12欧姆),允许直接与高阻抗源连接。其宽带宽和高线性度使其适合射频和视频应用,内部有过流保护电路。

6. 应用信息: - TSH321适用于需要宽带宽和高输入阻抗的应用,如射频放大和视频信号处理。

7. 封装信息: - TSH321提供DIP8和SO8(塑料微封装)两种封装方式。
TSH321I 价格&库存

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