TSU101, TSU102, TSU104
Nanopower, rail-to-rail input and output, 5 V CMOS operational
amplifiers
Datasheet - production data
Benefits
•
•
•
•
•
42 years of typical equivalent lifetime
(for TSU101) if supplied by a 220 mAh coin
type Lithium battery
Tolerance to power supply transient drops
Accurate signal conditioning of high
impedance sensors
Application performances guaranteed over
industrial temperature range
Fast desaturation
Applications
•
•
•
•
•
•
•
•
Features
•
•
•
•
•
•
•
•
Submicro ampere current consumption:
580 nA typ per channel at 25 °C at
VCC = 1.8 V
Low supply voltage: 1.5 V - 5.5 V
Unity gain stable
Rail-to-rail input and output
Gain bandwidth product: 8 kHz typ
Low input bias current: 5 pA max at 25 °C
High tolerance to ESD: 2 kV HBM
Industrial temperature range:
-40 °C to 85 °C
September 2015
Ultra long life battery-powered applications
Power metering
UV and photo sensors
Electrochemical and gas sensors
Pyroelectric passive infrared (PIR) detection
Battery current sensing
Medical instrumentation
RFID readers
Description
The TSU101, TSU102, and TSU104 operational
amplifiers offer an ultra low-power consumption
of 580 nA typical and 750 nA maximum per
channel when supplied by 1.8 V. Combined with
a supply voltage range of 1.5 V to 5.5 V, these
features allow the TSU10x series to be efficiently
supplied by a coin type Lithium battery or a
regulated voltage in low-power applications.
The 8 kHz gain bandwidth of these devices make
them ideal for sensor signal conditioning, battery
supplied, and portable applications.
DocID024317 Rev 3
This is information on a product in full production.
1/33
www.st.com
Contents
TSU101, TSU102, TSU104
Contents
1
Package pin connections................................................................ 3
2
Absolute maximum ratings and operating conditions ................. 4
3
4
Electrical characteristics ................................................................ 5
Application information ................................................................ 17
5
6
7
2/33
4.1
Operating voltages .......................................................................... 17
4.2
Rail-to-rail input ............................................................................... 17
4.3
Input offset voltage drift over temperature ....................................... 17
4.4
Long term input offset voltage drift .................................................. 18
4.5
Schematic optimization aiming for nanopower ................................ 19
4.6
PCB layout considerations .............................................................. 20
4.7
Using the TSU10x series with sensors............................................ 20
4.8
Fast desaturation ............................................................................ 22
4.9
Using the TSU10x series in comparator mode ................................ 22
4.10
ESD structure of TSU10x series ..................................................... 22
Package information ..................................................................... 23
5.1
SC70-5 (or SOT323-5) package information ................................... 24
5.2
SOT23-5 package information ........................................................ 25
5.3
DFN8 2x2 package information ....................................................... 26
5.4
MiniSO8 package information ......................................................... 27
5.5
QFN16 3x3 package information..................................................... 28
5.6
TSSOP14 package information ....................................................... 30
Ordering information..................................................................... 31
Revision history ............................................................................ 32
DocID024317 Rev 3
TSU101, TSU102, TSU104
1
Package pin connections
Package pin connections
Figure 1: Pin connections for each package (top view)
DocID024317 Rev 3
3/33
Absolute maximum ratings and operating
conditions
2
TSU101, TSU102, TSU104
Absolute maximum ratings and operating conditions
Table 1: Absolute maximum ratings (AMR)
Symbol
VCC
Vid
Vin
Iin
Tstg
Tj
Rthja
Parameter
Supply voltage
Value
(1)
6
Differential input voltage
(2)
Input voltage
(VCC-) - 0.2 to (VCC+) + 0.2
Input current
(4)
10
Storage temperature
-65 to 150
Maximum junction temperature
Thermal resistance junction to
(5)(6)
ambient
HBM: human body model
MM: machine model
V
±VCC
(3)
150
SC70-5
205
SOT23-5
250
DFN8 2x2
117
MiniSO8
190
QFN16 3x3
45
TSSOP14
100
(7)
mA
°C
°C/W
2000
(8)
200
ESD
CDM: charged device model
(9)
All other packages
except SC70-5
V
1000
SC70-5
Latch-up immunity
Unit
900
(10)
200
mA
Notes:
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
All voltage values, except the differential voltage are with respect to the network ground terminal.
The differential voltage is the non-inverting input terminal with respect to the inverting input terminal.
((VCC+) - Vin) must not exceed 6 V, (Vin - VCC-) must not exceed 6 V.
The input current must be limited by a resistor in series with the inputs.
Rth are typical values.
Short-circuits can cause excessive heating and destructive dissipation.
Related to ESDA/JEDEC JS-001 Apr. 2010
Related to JEDEC JESD22-A115C Nov.2010
Related to JEDEC JESD22-C101-E Dec. 2009
(10)
Related to JEDEC JESD78C Sept. 2010
Table 2: Operating conditions
Symbol
4/33
Parameter
VCC
Supply voltage
Vicm
Common mode input voltage range
Toper
Operating free air temperature range
Value
1.5 to 5.5
DocID024317 Rev 3
(VCC-) - 0.1 to (VCC+) + 0.1
-40 to 85
Unit
V
°C
TSU101, TSU102, TSU104
3
Electrical characteristics
Electrical characteristics
Table 3: Electrical characteristics at VCC+ = 1.8 V with VCC- = 0 V, Vicm = VCC/2,
Tamb = 25 ° C, and RL = 1 MΩ connected to VCC/2 (unless otherwise specified)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
-3
0.1
3
Unit
DC performance
Vio
ΔVio/ΔT
ΔVio
Iio
Iib
CMR
Avd
VOH
VOL
Input offset voltage
-40 °C < T< 85 °C
Input offset voltage drift
-40 °C < T< 85 °C
Long-term input offset
voltage drift
T = 25 °C
Input offset current
Input bias current
(1)
1
-40 °C < T< 85 °C
Large signal voltage gain
High level output voltage,
(drop from VCC+)
Low level output voltage
Iout
Output source current
Supply current,
(per channel)
-40 °C < T< 85 °C
5
65
-40 °C < T< 85 °C
65
Vicm = 0 to 1.8 V, Vout = VCC/2
55
-40 °C < T< 85 °C
55
Vout = 0.3 V to ((VCC+) - 0.3 V),
RL = 100 kΩ
95
-40 °C < T< 85 °C
95
85
74
dB
115
RL = 100 kΩ
40
-40 °C < T< 85 °C
40
RL = 100 kΩ
40
-40 °C < T< 85 °C
40
4
-40 °C < T< 85 °C
4
Vout = 0 V, VID = 200 mV
4
-40 °C < T< 85 °C
4
No load, Vout = VCC/2
pA
30
Vicm = 0 to 0.6 V, Vout = VCC/2
Vout = VCC , VID = -200 mV
μV/°C
5
30
1
mV
µV/
√month
0.18
(2)
Common mode rejection
ratio 20 log (ΔVicm/ΔVio)
3.4
5
(2)
Output sink current
ICC
-3.4
mV
5
mA
5
580
-40 °C < T< 85 °C
750
800
nA
AC performance
GBP
Gain bandwidth product
8
Fu
Unity gain frequency
8
ϕm
Phase margin
Gm
Gain margin
SR
Slew rate (10 % to 90 %)
en
Equivalent input noise
voltage
RL = 1 MΩ, CL = 60 pF
RL = 1 MΩ, CL = 60 pF
Vout = 0.3 V to ((VCC+) - 0.3 V)
60
Degrees
10
dB
3
V/ms
f = 100 Hz
265
f = 1 kHz
265
DocID024317 Rev 3
kHz
nV/√Hz
5/33
Electrical characteristics
Symbol
∫en
TSU101, TSU102, TSU104
Parameter
Low-frequency peak-topeak input noise
in
Equivalent input noise
current
trec
Overload recovery time
Conditions
Bandwidth: f = 0.1 to 10 Hz
Min.
Typ.
9
f = 100 Hz
0.64
f = 1 kHz
4.4
100 mV from rail in comparator,
RL = 100 kΩ, VID = ±VCC,
-40 °C < T< 85 °C
30
Max.
Unit
µVpp
fA/√Hz
µs
Notes:
(1)
Typical value is based on the Vio drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and
assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration.
(2)
Guaranteed by design.
6/33
DocID024317 Rev 3
TSU101, TSU102, TSU104
Electrical characteristics
Table 4: Electrical characteristics at VCC+ = 3.3 V with VCC- = 0 V, Vicm = VCC/2,
Tamb = 25 ° C, and RL = 1 MΩ connected to VCC/2 (unless otherwise specified)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
-3
0.1
3
Unit
DC performance
Vio
ΔVio/ΔT
ΔVio
Iio
Iib
CMR
Avd
Input offset voltage
-40 °C < T< 85 °C
Input offset voltage drift
-40 °C < T< 85 °C
Long-term input offset
voltage drift
T = 25 °C
Input offset current
Input bias current
(1)
1
-40 °C < T< 85 °C
Large signal voltage gain
High level output voltage
(drop from VCC+)
VOL
Low level output voltage
Output sink current
Iout
Output source current
Supply current,
(per channel)
-40 °C < T< 85 °C
5
pA
30
Vicm = 0 to 2.1 V, Vout = VCC/2
70
-40 °C < T< 85 °C
70
Vicm = 0 to 3.3 V, Vout = VCC/2
60
-40 °C < T< 85 °C
60
Vout = 0.3 V to ((VCC+) - 0.3 V),
RL= 100 kΩ
105
-40 °C < T< 85 °C
105
92
77
dB
120
RL = 100 kΩ
40
-40 °C < T< 85 °C
40
RL = 100 kΩ
40
-40 °C < T< 85 °C
40
Vout = VCC , VID = -200 mV
6
-40 °C < T< 85 °C
6
Vout = 0 V, VID = 200 mV
8
-40 °C < T< 85 °C
8
No load, Vout = VCC/2
μV/°C
5
30
1
mV
µV/
√month
0.36
(2)
Common mode rejection
ratio 20 log (ΔVicm/ΔVio)
3.4
5
(2)
VOH
ICC
-3.4
mV
9
mA
11
600
-40 °C < T< 85 °C
800
850
nA
AC performance
GBP
Gain bandwidth product
8
Fu
Unity gain frequency
8
ϕm
Phase margin
Gm
Gain margin
SR
Slew rate (10 % to 90 %)
en
Equivalent input noise
voltage
∫en
Low-frequency peak-topeak input noise
RL = 1 MΩ, CL = 60 pF
RL = 1 MΩ, CL = 60 pF,
Vout = 0.3 V to ((VCC+) - 0.3 V)
60
Degrees
11
dB
3
V/ms
f = 100 Hz
260
f = 1 kHz
255
Bandwidth: f = 0.1 to 10 Hz
8.6
DocID024317 Rev 3
kHz
nV/√Hz
µVpp
7/33
Electrical characteristics
Symbol
TSU101, TSU102, TSU104
Parameter
in
Equivalent input noise
current
trec
Overload recovery time
Conditions
Min.
Typ.
f = 100 Hz
0.55
f = 1 kHz
3.8
100 mV from rail in comparator,
RL = 100 kΩ, VID = ±VCC,
-40 °C < T< 85 °C
30
Max.
Unit
fA/√Hz
µs
Notes:
(1)
Typical value is based on the Vio drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and
assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration.
(2)
Guaranteed by design.
8/33
DocID024317 Rev 3
TSU101, TSU102, TSU104
Electrical characteristics
Table 5: Electrical characteristics at VCC+ = 5 V with VCC- = 0 V, Vicm = VCC/2,
Tamb = 25 ° C, and RL = 1 MΩ connected to VCC/2 (unless otherwise specified)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
-3
0.1
3
Unit
DC performance
Vio
ΔVio/ΔT
ΔVio
Iio
Iib
CMR
Input offset voltage
-40 °C < T< 85 °C
Input offset voltage drift
-40 °C < T< 85 °C
Long-term input offset
voltage drift
T = 25 °C
Input offset current
Input bias current
-3.4
5
(1)
1
-40 °C < T< 85 °C
1
-40 °C < T< 85 °C
Vicm = 0 to 3.8 V, Vout = VCC/2
70
-40 °C < T< 85 °C
70
Vicm = 0 to 5 V, Vout = VCC/2
65
-40 °C < T< 85 °C
65
Supply voltage rejection
ratio
VCC = 1.5 to 5.5 V, Vicm = 0 V
70
-40 °C < T< 85 °C
70
Avd
Large signal voltage gain
Vout = 0.3 V to ((Vcc+) - 0.3 V),
RL= 100 kΩ
110
-40 °C < T< 85 °C
110
VOL
High level output voltage,
(drop from VCC+)
Low level output voltage
Output sink current
Iout
Output source current
ICC
Supply current,
(per channel)
5
90
82
dB
90
130
RL = 100 kΩ
40
-40 °C < T< 85 °C
40
RL = 100 kΩ
40
-40 °C < T< 85 °C
40
Vout = VCC , VID = -200 mV
6
-40 °C < T< 85 °C
6
Vout = 0 V, VID = 200 mV
8
-40 °C < T< 85 °C
8
No load, Vout = VCC/2
pA
30
SVR
VOH
μV/°C
5
30
(2)
mV
µV/
√month
1.1
(2)
Common mode rejection
ratio 20 log (ΔVicm/ΔVio)
3.4
mV
9
mA
11
650
-40 °C < T< 85 °C
850
nA
950
AC performance
GBP
Gain bandwidth product
Fu
Unity gain frequency
ϕm
Phase margin
Gm
Gain margin
SR
Slew rate (10 % to 90 %)
en
Equivalent input noise
voltage
9
RL = 1 MΩ, CL = 60 pF
RL = 1 MΩ, CL = 60 pF,
Vout = 0.3 V to ((VCC+) - 0.3 V)
8.6
60
Degrees
12
dB
3
V/ms
f = 100 Hz
240
f = 1 kHz
225
DocID024317 Rev 3
kHz
nV√Hz
9/33
Electrical characteristics
Symbol
∫en
Parameter
Low-frequency
peak-to-peak input noise
in
Equivalent input noise
current
trec
Overload recovery time
EMIRR
TSU101, TSU102, TSU104
Electromagnetic
interference rejection
(3)
ratio
Conditions
Min.
Typ.
Bandwidth: f = 0.1 to 10 Hz
8.1
f = 100 Hz
0.18
f = 1 kHz
3.5
100 mV from rail in comparator,
RL = 100 kΩ, VID = ±VCC,
-40 °C < T< 85 °C
30
Vin = -10 dBm, f = 400 MHz
73
Vin = -10 dBm, f = 900 MHz
88
Vin = -10 dBm, f = 1.8 GHz
80
Vin = -10 dBm, f = 2.4 GHz
80
Max.
Unit
µVpp
fA√Hz
µs
dB
Notes:
(1)
Typical value is based on the Vio drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and
assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration.
(2)
(3)
Guaranteed by design.
Based on evaluations performed only in conductive mode.
10/33
DocID024317 Rev 3
TSU101, TSU102, TSU104
Electrical characteristics
Figure 2: Supply current vs. supply voltage
Figure 3: Supply current vs. input common mode
voltage
Figure 4: Supply current in saturation mode
Figure 5: Input offset voltage distribution
1.0
0.9
0.8
Temperature
85°C/65°C/45°C/25°C/-5°C/-40°C
Icc (µA)
0.7
0.6
0.5
0.4
0.3
0.2
Vcc=3.3V
Follower configuration
0.1
3100
3125
3150
3175
3200
3225
3250
3275
3300
0
25
50
75
100
125
150
175
0.0
Input voltage (mV)
Figure 6: Input offset voltage vs common mode voltage
Figure 7: Input offset voltage vs temperature at 3.3 V
supply voltage
DocID024317 Rev 3
11/33
Electrical characteristics
TSU101, TSU102, TSU104
Figure 8: Input offset voltage temperature coefficient
distribution
Figure 9: Input bias current vs. temperature at
mid VICM
Figure 10: Input bias current vs. temperature at
low VICM
Figure 11: Input bias current vs. temperature at
high VICM
Figure 12: Output characteristics at 1.8 V supply voltage
Figure 13: Output characteristics at 3.3 V supply voltage
12/33
DocID024317 Rev 3
TSU101, TSU102, TSU104
Electrical characteristics
Figure 15: Output voltage vs. input voltage close to the
rails
Temperature
85°C/65°C/45°C/25°C/-5°C/-40°C
Vcc=3.3V
Follower configuration
3100
3125
3150
3175
3200
3225
3250
3275
3300
3300
3275
3250
3225
3200
3175
3150
3125
3100
175
150
125
100
75
50
25
0
0
25
50
75
100
125
150
175
Output voltage (mV)
Figure 14: Output characteristics at 5 V supply voltage
Input voltage (mV)
Figure 16: Output saturation with a sine wave on input
Figure 17: Desaturation time
Figure 18: Phase reversal free
Figure 19: Slew rate vs. supply voltage
DocID024317 Rev 3
13/33
Electrical characteristics
TSU101, TSU102, TSU104
Figure 20: Output swing vs. input signal frequency
Figure 21: Triangulation of a sine wave
Figure 22: Large signal response at 3.3 V supply
voltage
Figure 23: Small signal response at 3.3 V supply voltage
Figure 24: Overshoot vs. capacitive load at 3.3 V supply
voltage
Figure 25: Phase margin vs. capacitive load at 3.3 V
supply voltage
14/33
DocID024317 Rev 3
TSU101, TSU102, TSU104
Electrical characteristics
Figure 26: Bode diagram for different feedback values
Figure 27: Bode diagram at 1.8 V supply voltage
Figure 28: Bode diagram at 3.3 V supply voltage
Figure 29: Bode diagram at 5 V supply voltage
Figure 30: Gain bandwidth product vs. input common
mode voltage
Figure 31: In-series resistor (Riso) vs. capacitive load
DocID024317 Rev 3
15/33
Electrical characteristics
TSU101, TSU102, TSU104
Figure 32: Noise at 1.8 V supply voltage in follower
configuration
Figure 33: Noise at 3.3 V supply voltage in follower
configuration
Figure 34: Noise at 5 V supply voltage in follower
configuration
Figure 35: Noise amplitude on 0.1 to 10 Hz frequency
range
Figure 36: Channel separation on TSU102
Figure 37: Channel separation on TSU104
16/33
DocID024317 Rev 3
TSU101, TSU102, TSU104
Application information
4
Application information
4.1
Operating voltages
The TSU101, TSU102, and TSU104 series of amplifiers can operate from 1.5 V to 5.5 V.
Their parameters are fully specified at 1.8 V, 3.3 V, and 5 V supply voltages and are very
stable in the full VCC range. Additionally, main specifications are guaranteed on the
industrial temperature range from -40 to 85 ° C.
4.2
Rail-to-rail input
The TSU101, TSU102, and TSU104 series is built with two complementary PMOS and
NMOS input differential pairs. Thus, these devices have a rail-to-rail input, and the input
common mode range is extended from (VCC-) - 0.1 V to (VCC+) + 0.1 V.
The devices have been designed to prevent phase reversal behavior.
4.3
Input offset voltage drift over temperature
The maximum input voltage drift over the temperature variation is defined as the offset
variation related to the offset value measured at 25 °C. The operational amplifier is one of
the main circuits of the signal conditioning chain, and the amplifier input offset is a major
contributor to the chain accuracy. The signal chain accuracy at 25 °C can be compensated
during production at application level. The maximum input voltage drift over temperature
enables the system designer to anticipate the effects of temperature variations.
The maximum input voltage drift over temperature is computed using Equation 1.
Equation 1
∆V io
V ( T ) – V io ( 25 °C )
= ma x io
∆T
T – 25 °C
with T = -40 °C and 85 °C.
The datasheet maximum value is guaranteed by measurements on a representative
sample size ensuring a Cpk (process capability index) greater than 2.
DocID024317 Rev 3
17/33
Application information
4.4
TSU101, TSU102, TSU104
Long term input offset voltage drift
To evaluate product reliability, two types of stress acceleration are used:
•
•
Voltage acceleration, by changing the applied voltage
Temperature acceleration, by changing the die temperature (below the maximum
junction temperature allowed by the technology) with the ambient temperature.
The voltage acceleration has been defined based on JEDEC results, and is defined using
Equation 2.
Equation 2
A FV = e
β . ( VS – VU )
Where:
AFV is the voltage acceleration factor
b is the voltage acceleration constant in 1/V, constant technology parameter (β = 1)
VS is the stress voltage used for the accelerated test
VU is the voltage used for the application
The temperature acceleration is driven by the Arrhenius model, and is defined in
Equation 3.
Equation 3
A FT = e
Ea
1
1
------ .
–
k
TU TS
Where:
AFT is the temperature acceleration factor
Ea is the activation energy of the technology based on the failure rate
-5
-1
k is the Boltzmann constant (8.6173 x 10 eVk )
TU is the temperature of the die when VU is used (°K)
TS is the temperature of the die under temperature stress (°K)
The final acceleration factor, AF, is the multiplication of the voltage acceleration factor and
the temperature acceleration factor (Equation 4).
Equation 4
A F = A FT × A FV
AF is calculated using the temperature and voltage defined in the mission profile of the
product. The AF value can then be used in Equation 5 to calculate the number of months of
use equivalent to 1000 hours of reliable stress duration.
Equation 5
Months = A F × 1000 h × 12 months / ( 24 h × 365.25 days )
18/33
DocID024317 Rev 3
TSU101, TSU102, TSU104
Application information
To evaluate the op-amp reliability, a follower stress condition is used where VCC is defined
as a function of the maximum operating voltage and the absolute maximum rating
(as recommended by JEDEC rules).
The Vio drift (in µV) of the product after 1000 h of stress is tracked with parameters at
different measurement conditions (see Equation 6).
Equation 6
V CC = maxV op with V icm = V CC / 2
The long term drift parameter (ΔVio), estimating the reliability performance of the product, is
obtained using the ratio of the Vio (input offset voltage value) drift over the square root of
the calculated number of months (Equation 7).
Equation 7
∆V io =
V io dr ift
( month s )
where Vio drift is the measured drift value in the specified test conditions after 1000 h stress
duration.
4.5
Schematic optimization aiming for nanopower
To benefit from the full performance of the TSU10 series, the impedances must be
maximized so that current consumption is not lost where it is not required.
For example, an aluminum electrolytic capacitance can have significantly high leakage.
This leakage may be greater than the current consumption of the op-amp. For this reason,
ceramic type capacitors are preferred.
For the same reason, big resistor values should be used in the feedback loop. However,
there are three main limitations to be considered when choosing a resistor.
1.
2.
3.
When the TSU10x series is used with a sensor: the resistance connected between the
sensor and the input must remain much higher than the impedance of the sensor
itself.
Noise generated: a 100 kΩ resistor generates 40 nV/√Hz, a bigger resistor value
generates even more noise.
Leakage on the PCB: leakage can be generated by moisture. This can be improved by
using a specific coating process on the PCB.
DocID024317 Rev 3
19/33
Application information
4.6
TSU101, TSU102, TSU104
PCB layout considerations
For correct operation, it is advised to add 10 nF decoupling capacitors as close as possible
to the power supply pins.
Minimizing the leakage from sensitive high impedance nodes on the inputs of the TSU10x
series can be performed with a guarding technique. The technique consists of surrounding
high impedance tracks by a low impedance track (the ring). The ring is at the same
electrical potential as the high impedance node.
Therefore, even if some parasitic impedance exists between the tracks, no leakage current
can flow through them as they are at the same potential (see Figure 38: "Guarding on the
PCB").
Figure 38: Guarding on the PCB
4.7
Using the TSU10x series with sensors
The TSU10x series has MOS inputs, thus input bias currents can be guaranteed down to
5 pA maximum at ambient temperature. This is an important parameter when the
operational amplifier is used in combination with high impedance sensors.
The TSU101, TSU102, and TSU104 series is perfectly suited for trans-impedance
configuration as shown in Figure 39: "Trans-impedance amplifier schematic". This
configuration allows a current to be converted into a voltage value with a gain set by the
user. It is an ideal choice for portable electrochemical gas sensing or photo/UV sensing
applications. The TSU10x series, using trans-impedance configuration, is able to provide a
voltage value based on the physical parameter sensed by the sensor.
20/33
DocID024317 Rev 3
TSU101, TSU102, TSU104
Application information
Electrochemical gas sensors
The output current of electrochemical gas sensors is generally in the range of tens of nA to
hundreds of µA. As the input bias current of the TSU101, TSU102, and TSU104 is very low
(see Figure 9, Figure 10, and Figure 11) compared to these current values, the TSU10x
series is well adapted for use with the electrochemical sensors of two or three electrodes.
Figure 40: "Potentiostat schematic using the TSU101 (or TSU102)" shows a potentiostat
(electronic hardware required to control a three-electrode cell) schematic using the
TSU101, TSU102, and TSU104. In such a configuration, the devices minimize leakage in
the reference electrode compared to the current being measured on the working electrode.
Figure 39: Trans-impedance amplifier schematic
Figure 40: Potentiostat schematic using the TSU101 (or TSU102)
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Application information
4.8
TSU101, TSU102, TSU104
Fast desaturation
When the TSU101, TSU102, and TSU104 operational amplifiers go into saturation mode,
they take a short period of time to recover, typically thirty microseconds. When recovering
after saturation, the TSU10x series does not exhibit any voltage peaks that could generate
issues (such as false alarms) in the application (see Figure 17). This is because the
internal gain of the amplifier decreases smoothly when the output signal gets close to the
VCC+ or VCC- supply rails (see Figure 15 and Figure 16).
Thus, to maintain signal integrity, the user should take care that the output signal stays at
100 mV from the supply rails.
With a trans-impedance schematic, a voltage reference can be used to keep the signal
away from the supply rails.
4.9
Using the TSU10x series in comparator mode
The TSU10x series can be used as a comparator. In this case, the output stage of the
device always operates in saturation mode. In addition, Figure 4 shows the current
consumption is not bigger and even decreases smoothly close to the rails. The TSU101,
TSU102, and TSU104 are obviously operational amplifiers and are therefore optimized to
be used in linear mode. We recommend to use the TS88 series of nanopower comparators
if the primary function is to perform a signal comparison only.
4.10
ESD structure of TSU10x series
The TSU101, TSU102, and TSU104 are protected against electrostatic discharge (ESD)
with dedicated diodes (see Figure 41: "ESD structure"). These diodes must be considered
at application level especially when signals applied on the input pins go beyond the power
supply rails (VCC+ or VCC-).
Figure 41: ESD structure
Current through the diodes must be limited to a maximum of 10 mA as stated in Table 1:
"Absolute maximum ratings (AMR)". A serial resistor or a Schottky diode can be used on
the inputs to improve protection but the 10 mA limit of input current must be strictly
observed.
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DocID024317 Rev 3
TSU101, TSU102, TSU104
5
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
DocID024317 Rev 3
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Package information
5.1
TSU101, TSU102, TSU104
SC70-5 (or SOT323-5) package information
Figure 42: SC70-5 (or SOT323-5) package outline
SIDE VIEW
DIMENSIONS IN MM
GAUGE PLANE
COPLANAR LEADS
SEATING PLANE
TOP VIEW
Table 6: SC70-5 (or SOT323-5) mechanical data
Dimensions
Ref.
Millimeters
Min.
A
Typ.
0.80
A1
24/33
Inches
Max.
Min.
1.10
0.315
Typ.
0.043
0.10
A2
0.80
b
0.15
0.90
Max.
0.004
1.00
0.315
0.30
0.006
0.035
0.039
0.012
c
0.10
0.22
0.004
D
1.80
2.00
2.20
0.071
0.079
0.009
0.087
E
1.80
2.10
2.40
0.071
0.083
0.094
E1
1.15
1.25
1.35
0.045
0.049
0.053
e
0.65
0.025
e1
1.30
0.051
L
0.26
<
0°
0.36
0.46
0.010
8°
0°
DocID024317 Rev 3
0.014
0.018
8°
TSU101, TSU102, TSU104
5.2
Package information
SOT23-5 package information
Figure 43: SOT23-5 package outline
Table 7: SOT23-5 mechanical data
Dimensions
Millimeters
Ref.
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
0.90
1.20
1.45
0.035
0.047
0.057
A2
0.90
1.05
1.30
0.035
0.041
0.051
B
0.35
0.40
0.50
0.014
0.016
0.020
C
0.09
0.15
0.20
0.004
0.006
0.008
D
2.80
2.90
3.00
0.110
0.114
0.118
A
A1
0.15
0.006
D1
1.90
0.075
e
0.95
0.037
E
2.60
2.80
3.00
0.102
0.110
0.118
F
1.50
1.60
1.75
0.059
0.063
0.069
L
0.10
0.35
0.60
0.004
0.014
0.024
K
0 degrees
10 degrees
0 degrees
DocID024317 Rev 3
10 degrees
25/33
Package information
5.3
TSU101, TSU102, TSU104
DFN8 2x2 package information
Figure 44: DFN8 2x2 package outline
Table 8: DFN8 2x2 mechanical data
Dimensions
Ref.
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
0.70
0.75
0.80
0.028
0.030
0.031
A1
0.00
0.02
0.05
0.000
0.001
0.002
b
0.15
0.20
0.25
0.006
0.008
0.010
D
2.00
0.079
E
2.00
0.079
e
L
0.50
0.045
0.55
0.020
0.65
N
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0.018
8
DocID024317 Rev 3
0.022
0.026
TSU101, TSU102, TSU104
5.4
Package information
MiniSO8 package information
Figure 45: MiniSO8 package outline
Table 9: MiniSO8 mechanical data
Dimensions
Millimeters
Ref.
Min.
Typ.
A
Inches
Max.
Min.
Typ.
1.1
A1
0
A2
0.75
b
Max.
0.043
0.15
0
0.95
0.030
0.22
0.40
0.009
0.016
c
0.08
0.23
0.003
0.009
D
2.80
3.00
3.20
0.11
0.118
0.126
E
4.65
4.90
5.15
0.183
0.193
0.203
E1
2.80
3.00
3.10
0.11
0.118
0.122
0.80
0.016
e
L
0.85
0.65
0.40
0.60
0.006
0.033
0.026
0.024
L1
0.95
0.037
L2
0.25
0.010
k
ccc
0°
0.037
8°
0.10
DocID024317 Rev 3
0°
0.031
8°
0.004
27/33
Package information
5.5
TSU101, TSU102, TSU104
QFN16 3x3 package information
Figure 46: QFN16 3x3 mm package outline
The exposed pad is not internally connected and can be set to ground.
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DocID024317 Rev 3
TSU101, TSU102, TSU104
Package information
Table 10: QFN16 3x3 mm mechanical data
Dimensions
Millimeters
Ref.
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
0.80
0.90
1.00
0.031
0.035
0.039
A1
0
0.05
0
0.30
0.007
3.10
0.114
1.80
0.059
3.10
0.114
1.80
0.059
A3
0.20
b
0.18
D
2.90
D2
1.50
E
2.90
E2
1.50
e
L
3.00
3.00
0.008
0.50
0.30
0.002
0.012
0.118
0.122
0.071
0.118
0.122
0.071
0.020
0.50
0.012
0.020
Figure 47: QFN16 3x3 mm recommended footprint
DocID024317 Rev 3
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Package information
5.6
TSU101, TSU102, TSU104
TSSOP14 package information
Figure 48: TSSOP14 package outline
Table 11: TSSOP14 mechanical data
Dimensions
Ref.
Millimeters
Min.
Typ.
A
Max.
Min.
Typ.
1.20
A1
0.05
A2
0.80
b
Max.
0.047
0.15
0.002
0.004
0.006
1.05
0.031
0.039
0.041
0.19
0.30
0.007
0.012
c
0.09
0.20
0.004
0.0089
D
4.90
5.00
5.10
0.193
0.197
0.201
E
6.20
6.40
6.60
0.244
0.252
0.260
E1
4.30
4.40
4.50
0.169
0.173
0.176
e
L
k
aaa
1.00
0.65
0.45
L1
30/33
Inches
0.60
0.0256
0.75
0.018
1.00
0°
0.024
0.030
0.039
8°
0.10
DocID024317 Rev 3
0°
8°
0.004
TSU101, TSU102, TSU104
6
Ordering information
Ordering information
Table 12: Order codes
Order code
Temperature range
Package
Packing
Marking
TSU101ICT
SC70-5
K22
TSU101ILT
SΟΤ23-5
K160
SC70-5
K24
TSU101RICT
TSU101RILT
TSU102IQ2T
TSU102IST
TSU104IQ4T
TSU104IPT
-40 °C to 85 °C
SΟΤ23-5
DFN8 2x2
Tape and reel
K169
K24
MiniSO8
K160
QFN16 3x3
K160
TSSOP14
TSU104I
DocID024317 Rev 3
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Revision history
7
TSU101, TSU102, TSU104
Revision history
Table 13: Document revision history
32/33
Date
Revision
Changes
16-Apr-2013
1
Initial release
02-Jul-2013
2
Added the TSU102 and TSU104 devices and updated
the datasheet accordingly.
Added the silhouettes, pin connections, and package
information for DFN8 2x2, MiniSO8, QFN16 3x3, and
TSSOP14.
Added Figure 36 and Figure 37
04-Sep-2015
3
Updated title of Figure 31
Replaced QFN16 3x3 package information (outline,
mechanical data, and footprint).
DocID024317 Rev 3
TSU101, TSU102, TSU104
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