TXDV1212RG

TXDVxx12 12 A high voltage Triacs Features A2 ■ On-state current (IT(RMS)): 12 A ■ Max. blocking voltage (VDRM/VRRM): 1200 V ■ Gate current (IGT): 100 mA ■ Commutation @ 10 V/µs: up to 42.5 A/ms ■ Noise immunity: 2 kV/µs ■ Insulated package: – 2,500 V rms (UL recognized: E81734). G A1 Description A1 A2 The TXDVxx12 series uses a high performance alternistor technology. TO-220AB insulated Featuring very high commutation levels and high surge current capability, these devices are well adapted to power control for inductive and resistive loads (motor, transformer...) especially on three-phase power grid. Targeted three-phase applications include heating systems, motor starters, and induction motor speed control (especially for fans). Table 1. G Device summary Parameter Blocking voltage VDRM/VRRM TXDV812RG TXDV1212RG 800 V 1200 V On-state current IT(RMS) 12 A 100 mA Gate current IGT January 2012 Doc ID 18272 Rev 2 1/7 www.st.com 7 Characteristics TXDVxx12 1 Characteristics Table 2. Absolute maximum ratings (limiting values) Symbol Parameter IT(RMS) On-state rms current (180° conduction angle) VDRM VRRM Repetitive peak off-state voltage Value Unit 12 A 800 V Tc = 90 °C TXDV812 TXDV1212 Tj = 125 °C 1200 tp = 2.5 ms ITSM I2t Non repetitive surge peak on-state current I2t value for fusing dI/dt Critical rate of rise of on-state current IG = 500 mA dIG/dt = 1 A/µs Tstg Tj Storage junction temperature range Operating junction temperature range tp = 8.3 ms 170 Tj = 25 °C 125 A tp = 10 ms 120 tp = 10 ms 72 A2 S F = 50 Hz 100 A/µs - 40 to + 150 - 40 to + 125 °C 2500 V VINS(RMS)(1) Insulation rms voltage 1. A1, A2, gate terminals to case for 1 minute Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Value Symbol Test conditions TXDV812 IGT VGT VGD VD = 12 V DC, RL = 33 Ω VD = VDRM RL = 3.3 kΩ Tj = 110 °C tgt VD = VDRM IG = 500 mA dIG/dt = 3 A/µs IL IG = 1.2 x IGT IH (1) IT = 500 mA dV/dt (1) VTM (1) ITM = 17 A Vto (1) Rd (1) IDRM IRRM MAX. 100 mA I-II-III MAX. 1.5 V I-II-III MIN. 0.2 V I-II-III TYP. 2.5 µs II Gate open (dI/dt)c (1) (dV/dt)c = 10 V/µs 100 TYP. mA 200 MAX. 100 mA Tj = 125 °C MIN. 2 kV/µs Tj = 110 °C MIN. tp = 380 µs 42.5 30 A/ms MAX. 1.95 V Threshold voltage MAX. 1.21 V Dynamic resistance MAX. 40 mΩ VDRM = VRRM Tj = 25 °C Tj = 110 °C 1. For either polarity of electrode A2 voltage with reference to electrode A1. 2/7 TXDV1212 I-II-III I-III Linear slope up to: VD = 67% VDRM Gate open Unit Quadrant Doc ID 18272 Rev 2 MAX. 0.01 2 5 mA TXDVxx12 Characteristics Table 4. Gate characteristics (maximum values) Symbol Parameter PG(AV) Value Unit 1 W Average gate power dissipation PGM Peak gate power dissipation tp = 20 µs 10 W IGM Peak gate current tp = 20 µs 4 A VGM Peak positive gate voltage tp = 20 µs 16 V Value Unit Junction to ambient 60 °C/W Rth(j-c) DC Junction to case for DC 2.5 °C/W Rth(j-c) AC Junction to case for 360 °Conduction angle (F = 50 Hz) 1.9 °C/W Table 5. Thermal resistance Symbol Parameter Rth(j-a) Figure 1. Max. rms power dissipation versus Figure 2. on-state rms current (F = 50Hz). (curves limited by (dI/dt)c) Max. rms power dissipation and max. allowable temperatures (Tamb and Tcase) for various Rth P(W) P(W) 20 Tcase(° C) 20 18 18 α = 180° 16 Rth case to ambient Rth = 0° C/W 1° C/W 2° C/W 4° C/W 16 α = 120° 14 12 6 α = 30° 180° α α IT(RMS)(A) 1 2 Figure 3. 3 4 5 6 8 -110 6 -115 4 -120 2 0 0 -105 10 α = 60° 2 -100 12 10 4 -95 14 α = 90° 8 -90 7 8 9 10 11 12 On-state rms current versus case temperature Tamb(° C) -125 0 0 20 Figure 4. 40 60 80 100 120 140 Relative variation of thermal impedance versus pulse duration Zth/Rth IT(RMS)(A) 14 1 12 Zth(j-c) 10 α = 180° 8 Zth(j-a) 0.1 6 4 2 TC(°C) tp(s) 0 0.01 0 10 20 30 40 50 60 70 80 90 100 110 120 130 1E-3 Doc ID 18272 Rev 2 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 3/7 Characteristics Figure 5. TXDVxx12 Relative variation of gate trigger Figure 6. current and holding current versus junction temperature Non repetitive surge peak on-state current versus number of cycles ITSM(A) IGT[Tj] . IH[Tj] IGT[Tj=25°C] IH[Tj=25°C] 120 2.5 100 t = 20 ms 2.0 One cycle 80 1.5 IGT 60 IH Tj initial=25°C 1.0 40 0.5 20 Tj(°C) 0.0 -40 -30 -20 -10 Figure 7. 0 10 20 30 40 Number of cycles 50 60 70 80 0 90 100 110 0 10 Non-repetitive surge peak on-state Figure 8. current for a sinusoidal pulse and corresponding values of I2t 100 1000 On-state characteristics (maximum values) ITM(A) ITSM(A), I2t (A2s) 1000 Tj max.: Vt0=1.21V Rt=0.040Ω Tj initial = 25°C ITSM 100 Tj initial = 25° C 100 I2t 10 Tj max. VTM(V) tp(ms) 1 10 1 Figure 9. 2 5 10 1 2 Safe turn-off operating area (dV/dt)c(V/µs) 1000 Tj = 110° C 100 10 (dI/dt)c(A/ms) 1 1 4/7 10 Doc ID 18272 Rev 2 100 3 4 5 6 TXDVxx12 2 Package information Package information ● Epoxy meets UL94,V0 ● Cooling method: C (by conduction) ● Recommended torque value: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. TO-220AB insulated dimensions Dimensions Ref. Millimeters Min. A 15.20 a1 C B ØI F A Max. Min. Typ. 15.90 0.598 3.75 Max. 0.625 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 ØI 3.75 3.85 0.147 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 b2 L Typ. Inches I4 l3 c2 a1 l2 a2 M b1 c1 e M Doc ID 18272 Rev 2 2.60 0.102 5/7 Ordering information 3 Ordering information Table 7. 4 Ordering information Order code Marking Package Weight TXDV812RG TXDV812 TXDV1212 TO-220AB insulated 2.3 g TXDV1212RG Base qty Delivery mode 50 Revision history Table 8. 6/7 TXDVxx12 Document revision history Date Revision Changes 30-Mar-2011 1 Initial release. 13-Jan-2012 2 Updated dI/dt in Table 2, and added Vto and Rd in Table 3 Doc ID 18272 Rev 2 Tube TXDVxx12 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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