TXN825RG

TXN825RG Datasheet Standard 25 A 800 V SCR Features A G K K A G TO-220AB insulated • On-state RMS current, IT(RMS) 25 A • • Max. junction temperature = 125 °C Max. blocking voltage = VDRM, VRRM = 800 V • IGT maximum = 40 mA • High immunity dV/dt = 1500 V/µs • • ECOPACK®2 compliant component (RoHS and HF compliance) Packaged in an insulated TO-220AB – Insulating voltage 2500 VRMS – UL1557 certified (file ref. E81734) Applications • • • • • • • Product status link TXN825RG Product summary Symbol Value IT(RMS) 25 A VDRM/VRRM 800 V IGT 40 mA Tj 125 °C Solid State Relay (SSR) Bypass AC DC Inrush Current Limiter (ICL) Battery Charger AC DC voltage controlled rectifier Off board automotive battery charger Motor soft starter Description Available in through-hole package, the TXN825RG is suitable for general purpose applications. It uses clip assembly technology, therefore the performance is superior in surge current capabilities. Housed in a TO-220AB ceramic insulated, this device provides an improved thermal resistance. DS12424 - Rev 2 - June 2018 For further information contact your local STMicroelectronics sales office. www.st.com TXN825RG TXN825RG Characteristics 1 TXN825RG Characteristics Table 1. Absolute ratings (limiting values), Tj = 25 °C unless otherwise specified Symbol Parameter IT(RMS) RMS on-state current (180° conduction angle) Value IT(AV) Average on-state current (180° conduction angle) ITSM Non repetitive surge peak on-state current Unit 25 TC = 83 °C A 16 tp = 10 ms 300 tp = 8.3 ms 314 I²t value for fusing tp = 10 ms 450 A²s Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns f = 50 Hz 50 A/µs Repetitive surge peak off-state voltage (50-60 Hz) Tj = 125 °C 800 V Tj = 125 °C 4 A Tj = 125 °C 1 W Storage junction temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +125 °C VRGM Maximum peak reverse gate voltage 5 V VINS Insulation RMS voltage, 1 minute, UL1557 certified E81734 2.5 kV I²t dl/dt VDRM / VRRM IGM PG(AV) Tstg tp = 20 µs Peak gate current Average gate power dissipation A Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol Test conditions Value Unit Min. 4 Max. 40 Max. 1.3 V VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C Max. 0.2 V IH IT = 500 mA, gate open Max. 50 mA IL IG = 1.2 x IGT Max. 90 mA Min. 1500 V/µs Value Unit IGT VD = 12 V, RL = 30 Ω VGT VGD dV/dt VD = 536 V, gate open Tj = 125 °C mA Table 3. Static characteristics Symbol VTM ITM = 50 A, tp = 380 μs Tj = 25 °C Max. 1.60 V Vt0 Threshold voltage Tj = 125 °C Max. 0.77 V Rd Dynamic resistance Tj = 125 °C Max. 14 mΩ Tj = 25 °C Max. 5 µA Tj = 125 °C Max. 4 mA IDRM / IRRM DS12424 - Rev 2 Test conditions VDRM = VRRM = 800 V page 2/9 TXN825RG Characteristics (curves) Table 4. Thermal parameters Symbol 1.1 Parameter Value Rth(j-c) Thermal resistance Junction to case (DC) 2.0 Rth(j-a) Junction to ambient (DC) 60 Unit °C/W Characteristics (curves) Figure 1. Maximum average power dissipation versus average on-state current 22 P(W) 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 20 18 16 14 12 α = 180 ° 10 8 6 4 2 IT(AV)(A) 0 0 2 4 6 8 10 12 14 16 Figure 3. Average and D.C. on-state current versus ambient temperature 3.0 Figure 2. Average and D.C. on-state current versus case temperature IT(AV)(A) IT(AV)(A) D.C α = 180° TC(°C) 0 25 50 2.0 100 125 Figure 4. Relative variation of thermal impedance junction to case and junction to ambiant versus pulse duration 1.0E+00 K=[Z th /Rth ] Zth(j-c) D.C. 2.5 75 Zth(j-a) α = 180 ° 1.5 1.0E-01 1.0 0.5 T a (°C) t P(s) 0.0 0 DS12424 - Rev 2 25 50 75 100 125 1.0E-02 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 page 3/9 TXN825RG Characteristics (curves) Figure 5. Relative variation of gate trigger and holding current versus junction temperature 2.5 Figure 6. Surge peak on-state current versus number of cycles IGT, IH , I L [T j ]/I GT, IH , I L [T j = 25 °C] ITSM(A) 300 2.0 250 IGT 1.5 Non repetitive Tj initial = 25 °C 200 150 1.0 IH and IL 100 0.5 Repetitive TC = 83 °C 50 T j (°C) 0.0 -40 -20 0 20 40 60 80 100 120 Figure 7. Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms 10000 Number of cycles 0 1 dI/dt limitation: 50 A/µs 100 1000 Figure 8. On-state characteristics (maximum values) 1000 ITSM(A) 10 ITM (A) Tj initial = 25 °C 100 1000 125 °C 10 25 °C t P(ms) 100 0.01 DS12424 - Rev 2 Tj max : Vto = 0.77 V Rd = 14 m Ω VTM (V) 1 0.10 1.00 10.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 page 4/9 TXN825RG Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 TO-220AB insulated package information • • • Epoxy resin is halogen free and meets UL94 flammability standard, level V0 Lead-free plating package leads Recommended torque: 0.4 to 0.6 N·m Figure 9. TO-220AB Insulated package outline DS12424 - Rev 2 page 5/9 TXN825RG TO-220AB Insulated package information Table 5. TO-220AB Insulated package mechanical data Dimensions Ref. Min. A Inches(1) Millimeters Typ. 15.20 a1 Max. Min. 15.90 0.5984 3.75 Typ. Max. 0.6260 0.1476 a2 13.00 14.00 0.5118 0.5512 B 10.00 10.40 0.3937 0.4094 b1 0.61 0.88 0.0240 0.0346 b2 1.23 1.32 0.0484 0.0520 C 4.40 4.60 0.1732 0.1811 c1 0.49 0.70 0.0193 0.0276 c2 2.40 2.72 0.0945 0.1071 e 2.40 2.70 0.0945 0.1063 F 6.20 6.60 0.2441 0.2598 I 3.73 3.88 0.1469 0.1528 L 2.65 2.95 0.1043 0.1161 I2 1.14 1.70 0.0449 0.0669 I3 1.14 1.70 0.0449 0.0669 I4 15.80 16.80 0.6220 M 16.40 2.6 0.6457 0.6614 0.1024 1. Inch dimensions are for reference only. DS12424 - Rev 2 page 6/9 TXN825RG TXN825RG Ordering information 3 TXN825RG Ordering information Figure 10. Ordering information scheme TXN 8 25 RG Standard insulated SCR series Voltage 8 = 800 V Current (RMS) 25 = 25 A Packing mode RG = tube Table 6. Ordering information DS12424 - Rev 2 Order code Marking Package Weight Base qty. Delivery mode TXN825RG TXN825 TO-220AB-Ins. 2.3 g 50 Tube page 7/9 TXN825RG Revision history Table 7. Document revision history DS12424 - Rev 2 Date Revision Changes 23-Feb-2018 1 Initial release. 01-Jun-2018 2 Removed maturity status indication from cover page. The document status is production data. page 8/9 TXN825RG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS12424 - Rev 2 page 9/9