TYN412RG

TN1215, TYN612, TYN812, TYN1012 Standard 12 A SCRs Datasheet - production data Features . $  On-state RMS current, IT(RMS) 12 A *  Repetitive peak off-state voltage, VDRM and VRRM 600 V, 800 V and 1000 V $ $  Triggering gate current, IGT 5 mA or 15 mA $ . * . '3$. Description $ 'ð3$. * $ . $ * The standard 12 A SCR series is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits. $ . $ ,3$. * Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space. 72$% Table 1. Device summary Voltage VDRM / VRRM (v) Order code 600 800 IGT (mA) Package 1000 TYN1012RG x 15 TO-220AB TYN1012TRG x 5 TO-220AB TYN612RG x 15 TO-220AB TYN612TRG x 5 TO-220AB TYN812RG x 15 TO-220AB TYN812TRG x 5 TO-220AB TN1215-600B x 15 DPAK TN1215-600B-TR x 15 DPAK TN1215-600G x 15 D2PAK TN1215-600G-TR x 15 D2PAK TN1215-600H x 15 IPAK TN1215-800B-TR x 15 DPAK TN1215-800G-TR x 15 D2PAK TN1215-800H x 15 IPAK October 2016 This is information on a product in full production. DocID7475 Rev 11 1/17 www.st.com Characteristics 1 TN1215, TYN612, TYN812, TYN1012 Characteristics Table 2. Absolute ratings (limiting values) Value Symbol TN1215x00G(1)(2) TN1215-x00B Parameter TN1215-x00H TYNx12 (1) (2) Unit (2)(3) TYNx12T(2)(3) IT(RMS) On-state RMS current (180° conduction angle) IT(AV) Average on-state current (180° conduction angle) ITSM Non repetitive surge peak tp = 8.3 ms on-state current tp = 10 ms Tjinitial = 25 °C I2t value for fusing Tjinitial = 25 °C I2t TO-220AB ins. D2PAK Tc = 110 °C DPAK IPAK 12 A 8 115 145 110 140 60 98 A A2S dI/dt Critical rate of rise of onstate current IG = 2 x IGT, tr ≤ 100 ns F = 60 Hz Tj = 125 °C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125 °C 4 A Tj = 125 °C 1 W PG(AV) Average gate power dissipation Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C VRGM Maximum peak reverse gate voltage 5 V 1. x00= 600, 800 2. Check Table 1 for devices availability 3. x= 6,8,10 2/17 DocID7475 Rev 11 TN1215, TYN612, TYN812, TYN1012 Characteristics Table 3. Standard electrical characteristics (Tj = 25 °C, unless otherwise specified) TN1215-x00(1)(2) Symbol Test conditions -B/-H IGT TYN(2) VD = 12 V, RL = 33  VGT -G x12T(3) x12(3) Min. 2 0.5 2 Max. 15 5 15 Unit mA Max. 1.3 V Min. 0.2 V VGD VD = VDRM, RL = 3.3 k IH IT = 500 mA, gate open Max. 40 30 15 30 mA IL IG = 1.2 IGT Max. 80 60 30 60 mA 40 200 V/µs Tj = 125 °C dV/dt VD = 67% VDRM, gate open Tj =125 °C Min. VTM ITM = 24 A Tj = 25 °C Max. 1.6 V Vto Threshold voltage Tj = 125 °C Max. 0.85 V Rd Dynamic resistance Tj = 125 °C Max. 30 m 5 µA 2 mA IDRM IRRM tp = 380 µs VD = VR = VDRM = VRRM Tj = 25 °C Tj = 125 °C 200 Max. 1. x00= 600, 800 2. Check Table 1 for devices availability 3. x= 6,8,10 Table 4. Thermal resistance Symbol Rth(j-c) Parameter Junction to case (DC) D2PAK, DPAK, IPAK, TO-220AB (1) S Rth(j-a) Junction to ambient (DC) S(1) Value Unit 1.3 °C/W = 0.5 cm2 DPAK 70 = 1.0 cm2 D²PAK 45 IPAK 100 TO-220AB 60 °C/W 1. S = Copper surface under tab DocID7475 Rev 11 3/17 17 Characteristics TN1215, TYN612, TYN812, TYN1012 Figure 1. Maximum average power dissipation versus average on-state current 3:              Figure 2. Average and DC on-state current versus case temperature ,7$9 $  Į ƒ '&   Į ƒ    ƒ  ,7$9$      Į       Figure 3. Average and DC on-state current versus ambient temperature (DPAK, D2PAK)     K=[Zth(j-c)/Rth(j-c)] 'HYLFHPRXQWHGRQ)5ZLWK UHFRPPHQGHGSDGOD\RXW '& 'ð3$. '3$. 0.5 'ð3$.  '3$.  0.2 Į ƒ tp(s) 7D ƒ&        Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration K=[Zth(j-a)/Rth(j-a)] 1.00 Device mounted on FR4 with recommended pad layout DPAK D2PAK 0.10 TO-220AB / IPAK tp(s) 0.01 1E-2 4/17  1.0    Figure 4. Relative variation of thermal impedance junction to case versus pulse duration ,7$9 $  7Fƒ&  1E-1 1E+0 1E+1 1E+2 5E+2 0.1 1E-3 1E-2 1E-1 1E+0 Figure 6. Relative variation of gate trigger, latching and holding current versus junction temperature ,*7,+ ,/ >7M@  ,*7,+ ,/ >7M ƒ&@    ,*7          7M ƒ&        DocID7475 Rev 11 ,+ ,/     TN1215, TYN612, TYN812, TYN1012 Characteristics Figure 7. Surge peak on-state current versus number of cycles Figure 8. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp