®
TN16 and TYNx16 Series
16A SCRs
STANDARD
MAIN FEATURES:
Symbol IT(RMS) VDRM/VRRM IGT Value 16 600 to 1000 25 Unit
G
A
A
K
V mA
A
A
KA
DESCRIPTION The TYN / TN16 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.
G
K
2
A
D PAK (TN16-G)
G
TO-220AB (TYN)
ABSOLUTE RATINGS (limiting values)
Symbol IT(RMS) T(AV) ITSM Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage tp = 8.3 ms Tj = 25°C tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C 190 180 50 4 1 - 40 to + 150 - 40 to + 125 5 A2S A/µs A W °C V Tc = 110°C Tc = 110°C Value 16 10 200 A Unit A A
I ²t dI/dt IGM PG(AV) Tstg Tj VRGM
April 2002 - Ed: 4A
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TN16 and TYNx16 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol IGT VD = 12 V VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM RL = 3.3 kΩ IT = 500 mA IG = 1.2 x IGT VD = 67 % VDRM Gate open ITM = 32 A tp = 380 µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C VDRM = VRRM Tj = 125°C Gate open Tj = 125°C RL = 33 Ω Test Conditions MIN. MAX. MAX. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. Value 2 25 1.3 0.2 40 60 500 1.6 0.77 23 5 2 Unit mA V V mA mA V/µs V V mΩ µA mA
Threshold voltage Dynamic resistance
THERMAL RESISTANCES
Symbol Rth(j-c) Rth(j-a) Junction to case (DC) Junction to ambient (DC) S = 1 cm
S = Copper surface under tab
²
Parameter
Value 1.1 TO-220AB D PAK
²
Unit °C/W °C/W
60 45
PRODUCT SELECTOR
Voltage (xxx) Part Number 600 V TN1625-xxxG TYNx16 X X 800 V X X 1000 V X X 25 mA 25 mA D²PAK TO-220AB Sensitivity Package
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TN16 and TYNx16 Series
ORDERING INFORMATION
TN
STANDARD SCR SERIES CURRENT: 16A
16
25 -
600
G (-TR)
PACKAGE: 2 G: D PAK PACKING MODE: Blank: Tube -TR: Tape & Reel
SENSITIVITY: 25: 25mA
VOLTAGE: 600: 600V 800: 800V 1000: 1000V
TYN
STANDARD SCR SERIES
6
VOLTAGE: 6: 600V 8: 800V 10: 1000V
16
(RG)
PACKING MODE Blank: Bulk RG: Tube CURRENT: 16A
OTHER INFORMATION
Part Number TN1625-x00G TN1625-x00G-TR TYNx16 TYNx16RG
Note: x = voltage
Marking TN1625x00G TN1625x00G TYNx16 TYNx16
Weight 1.5 g 1.5 g 2.3 g 2.3 g
Base Quantity 50 1000 250 50
Packing mode Tube Tape & reel Bulk Tube
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TN16 and TYNx16 Series
Fig. 1: Maximum average power dissipation versus average on-state current.
P(W) 16 14 12 10 8 6 4 2 0 0 2 4 IT(av)(A) 6 8
α
360°
Fig. 2-1: Average and D.C. on-state current versus case temperature.
IT(av)(A) 18 16 14 12 10 8 6 4 2 0
D.C.
α = 180°
α =180°
Tcase(°C) 0 25 50 75 100 125
10
12
Fig. 2-2: Average and D.C. on-state current versus ambient temperature (copper surface under tab: S = 1 cm² (for D²PAK).
IT(av)(A) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 25 Tamb(°C) 50 75 100 125
α = 180° D.C.
Fig. 3: Relative variation of thermal impedance versus pulse duration.
K = [Zth/Rth] 1.00
Zth(j-c)
0.10
Zth(j-a)
tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature.
IGT,IH,IL [Tj] / IGR,IH,IL [Tj = 25 °C] 2.5 2.0
IGT
Fig. 5: Surge peak on-state current versus number of cycles.
ITSM(A) 200 180 160 140 120 100 80 60 40 20 0
tp = 10ms
Non repetitiv e Tj initial = 25 °C Repetitive Tcase = 110 °C
One cycle
1.5 1.0 0.5 Tj(°C) 0.0 -40 -20 0 20 40 60 80 100 120 140
IH & IL
Number of cycles 1 10 100 1000
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TN16 and TYNx16 Series
Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t.
ITSM(A),I 2t(A2s) 2000 1000
ITSM
Fig. 7: values).
On-state
characteristics
(maximum
ITM(A) 200
Tj initial = 25 °C
100
Tj max.: Vto = 0.77V Rd = 23m Ω
dI/dt limitattion
Tj = Tjmax.
100
It
2
10
Tj = 25°C
tp(ms) 10 0.01 0.10 1.00 10.00
VTM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm) (for D²PAK).
Rth(j-a) ( °C/W) 80 70 60 50 40 30 20 10 0 0 4 8 12 16 S (cm 2) 20 24 28 32 36 40
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TN16 and TYNx16 Series
PACKAGE MECHANICAL DATA D²PAK (Plastic)
DIMENSIONS
A E L2 C2
REF.
Millimeters Min. Typ. Max. 4.60 2.69 0.23 0.93 Min.
Inches Typ. Max.
D L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R
A A1 A2 B B2 C C2 D E G L L2 L3 R V2
4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0°
1.40
0.40
0.169 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.048 0.055 0.60 0.017 0.024 1.36 0.047 0.054 9.35 0.352 0.368 10.28 0.393 0.405 5.28 0.192 0.208 15.85 0.590 0.624 1.40 0.050 0.055 1.75 0.055 0.069 0.016 8° 0° 8°
FOOTPRINT DIMENSIONS (in millimeters) D²PAK (Plastic)
16.90
10.30 1.30
5.08
3.70 8.90
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TN16 and TYNx16 Series
PACKAGE MECHANICAL DATA TO-220AB (Plastic)
DIMENSIONS
B
REF.
C
Millimeters Min. Typ. 3.75 Max. Min.
Inches Typ. 0.147 Max. 0.625
b2
L F I A
l4
a1
c2
l3
l2 a2
b1 e
M c1
A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M
15.20
15.90 0.598
13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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