TYN612

T XN/TYN 0512 ---> TXN/TYN 1012 SCR . . . . FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY TXN Serie : INSULATED VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The TYN/TXN 0512 ---> TYN/TXN 1012 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle,single phase circuit) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2 t value Critical rate of rise of on-state current Gate supply : IG = 100 mA diG/dt = 1 A/µs Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter TXN TYN TXN TYN Tc=80°C Tc=90°C Tc=80°C Tc=90°C tp=8.3 ms tp=10 ms tp=10 ms Value 12 8 125 120 72 100 - 40 to + 150 - 40 to + 125 260 A2s A/µs °C °C °C Unit A A A K A G TO220AB (Plastic) I2 t dI/dt Tstg Tj Tl Symbol Parameter 0512 112 100 212 200 TYN/TXN 412 400 612 600 812 800 1012 1000 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 50 V April 1995 1/5 TXN/TYN 0512 ---> TXN/TYN 1012 THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient TXN TYN Parameter Value 60 3.5 2.5 Unit °C/W °C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IFGM = 4A (tp = 20 µs) VRGM = 5 V. ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt VD =12V VD =12V Test Conditions (DC) R L=33Ω (DC) R L=33Ω Tj=25°C Tj=25°C Tj= 125°C Tj=25°C Tj=25°C gate open Tj=25°C Tj=25°C Tj=25°C Tj= 125°C Tj= 125°C Tj= 125°C MIN TYP MAX MAX MIN TYP Value 15 1.5 0.2 2 Unit mA V V µs mA mA V mA VD =VDRM RL=3.3k Ω VD =VDRM IG = 40mA dIG/dt = 0.5A/µs IG= 1.2 IGT IT= 100mA IL IH VTM IDRM IRRM dV/dt tq TYP MAX MAX MAX 50 30 1.6 0.01 3 200 70 ITM= 24A tp= 380µs VDRM VRRM Rated Rated Linear slope up to VD=67%VDRM gate open VD =67%VDRM ITM= 24A VR= 25V dITM/dt=30 A/µs dVD /dt= 50V/ µs V/µs µs 2/5 TXN/TYN 0512 ---> TXN/TYN 1012 Fig.1 : Maximum average power dissipation versus average on-state current (TXN). Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact (TXN). F ig.3 : Maximum average power dissipation versus average on-state current (TYN). Fig.4 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact (TYN). Fig.5 : Average temperature (TXN). on-state current versus case Fig.6 : Average temperature (TYN). on-state current versus case 3/5 TXN/TYN 0512 ---> TXN/TYN 1012 Fig.7 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 Fig.8 : Relative variation of gate trigger current versus junction temperature. Zt h( j-c) 0.1 Zt h(j-a) tp( s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +2 F ig.9 : Non repetitive surge peak on-state current versus number of cycles. Fig.10 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10 ms, and corresponding value of I2t. Fig.11 : On-state characteristics (maximum values). 4/5 TXN/TYN 0512 ---> TXN/TYN 1012 PACKAGE MECHANICAL DATA TO220AB Plastic REF. A H G J D B I F P O L C M =N= A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.00 10.40 0.393 0.409 15.20 15.90 0.598 0.625 13.00 14.00 0.511 0.551 6.20 6.60 0.244 0.259 3.50 4.20 0.137 0.165 2.65 2.95 0.104 0.116 4.40 4.60 0.173 0.181 3.75 3.85 0.147 0.151 1.23 1.32 0.048 0.051 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 4.80 5.40 0.188 0.212 1.14 1.70 0.044 0.066 0.61 0.88 0.024 0.034 Cooling method : by conduction (method C) Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5