®
TYNx40 Series
40A SCRs
STANDARD
MAIN FEATURES:
Symbol IT(RMS) VDRM/VRRM IGT Value 40 600 to 1000 35 Unit
G
A
A
K
V mA
A
DESCRIPTION The TYNx40 series is suitable for applications where in-rush current conditions are critical, such as overvoltage crowbar protection circuits in power supplies, in-rush current limiting circuits, solid state relays (in back to back configuration), welding equipment, high power motor control circuits. Using clip assembly technology, they provide a superior performance in high surge current capabilites. ABSOLUTE RATINGS (limiting values)
Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage F = 60 Hz tp = 20 µs tp = 8.3 ms tp = 10 ms Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C Tc = 95°C Tc = 95°C Tj = 25°C Value 40 25 480 460 1060 50 4 1 - 40 to + 150 - 40 to + 125 5 A2S A/µs A W °C V Unit A A A
K A G
TO-220AB (TYNx40)
I ²t dI/dt IGM PG(AV) Tstg Tj VRGM
April 2002 - Ed: 4A
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TYNx40 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol IGT VD = 12 V VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM ITM = 80 A Gate open Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C tp = 380 µs RL = 3.3 kΩ Gate open Tj = 125°C RL = 33 Ω Test Conditions MIN. MAX. MAX. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. Value 3.5 35 1.3 0.2 75 150 1000 1.6 0.85 10 5 4 Unit mA V V mA mA V/µs V V mΩ µA mA
Threshold voltage Dynamic resistance VDRM = VRRM
THERMAL RESISTANCES
Symbol Rth(j-c) Rth(j-a) Junction to case (DC) Junction to ambient (DC) Parameter Value 0.8 60 Unit °C/W °C/W
PRODUCT SELECTOR
Voltage Part Number 600 V TYNx40 X 800 V X 1000 V X 35 mA TO-220AB Sensitivity Package
ORDERING INFORMATION
TYN
STANDARD SCR SERIES
6
VOLTAGE: 6: 600V 8: 800V 10: 1000V
40
(RG)
PACKING MODE Blank: Bulk RG: Tube CURRENT: 40A
OTHER INFORMATION
Part Number TYNx40 TYNx40RG
Note: x = voltage
Marking TYNx40 TYNx40
Weight 2.3 g 2.3 g
Base Quantity 250 50
Packing mode Bulk Tube
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TYNx40 Series
Fig. 1: Maximum average power dissipation versus average on-state current.
P(W) 40 35 30 25 20 15 10 5 0 0 5 10 IT(av)(A) 15 20
α
360°
Fig. 2: Average and DC on-state current versus case temperature.
IT(av)(A) 50
α = 180°
40 30 20 10
D.C.
α = 180°
Tcase(°C) 25 30 0 0 25 50 75 100 125
Fig. 3: Relative variation of thermal impedance versus pulse duration.
Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature.
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25°C] 2.5
K = [Zth/Rth] 1.00
Zth(j-c)
2.0
IGT
1.5 0.10
Zth(j-a)
1.0 0.5 tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.0 -40
IH & IL
Tj(°C) -20 0 20 40 60 80 100 120 140
Fig. 5: Surge peak on-state current versus number of cycles.
Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t.
ITSM(A),I 2t(A2s) 5000
Tj initial = 25 °C ITSM I2t
ITSM(A) 500 450 400 350 300 250 200 150 100 50 0
tp = 10ms
Non repetitive Tj initial = 25 °C
One cycle
1000
dI/dt limitattion
Repetitive Tcase = 95 °C
Number of cycles 1 10 100 1000 100 0.01 0.10
tp(ms) 1.00 10.00
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TYNx40 Series
Fig. 7: values).
ITM(A) 500
On-state
characteristics
(maximum
Tj max.: Vto = 0.85V Rd = 10m Ω
100
Tj = Tj max.
10
Tj = 25°C
1 0.0
VTM(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
PACKAGE MECHANICAL DATA TO-220AB (Plastic)
DIMENSIONS
B C
b2
REF.
Millimeters Min. Typ. 3.75 Max. Min.
Inches Typ. 0.147 Max. 0.625
L F I A
l4
a1
c2
l3
l2 a2
b1 e
M c1
A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M
15.20
15.90 0.598
13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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