TYP212

T YP 212 --->TYP 2012 SCR FOR OVERVOLTAGE PROTECTION . . . FEATURES HIGH SURGE CURRENT CAPABILITY HIGH dI/dt RATING HIGH STABILITY AND RELIABILITY DESCRIPTION The TYP 212 ---> 1012 Family uses high performance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application. K AG TO220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle, single phase circuit) Average on-state current (180° conduction angle, single phase circuit) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2 t value Non repetitive surge peak on-state current ( Tj initial = 25°C ) Exponential pulse wave form Critical rate of rise of on-state current Gate supply : IG = 100 mA diG/dt = 1 A/µs Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Tc = 110 °C Tc = 110 °C tp = 8.3 ms tp = 10 ms tp = 10 ms tp = 1 ms Value 12 8 315 300 450 750 A2s A Unit A A A I2t ITM dI/dt 100 A/µs °C °C °C Tstg Tj Tl - 40 to + 150 - 40 to + 125 260 Symbol Parameter 212 512 50 TYP 1012 100 2012 200 Unit VDRM VRRM April 1995 Repetitive peak off-state voltage Tj = 125 °C 25 V 1/5 TYP 212 ---> TYP 2012 THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 60 1.3 Unit °C/W °C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IFGM = 4A (tp = 20 µs) VRGM = 5 V. ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IL IH VTM IDRM IRRM dV/dt tq VD=12V VD=12V Test Conditions (DC) RL=33Ω (DC) RL=33Ω Tj=25°C Tj=25°C Tj= 125°C Tj=25°C Tj=25°C gate open Tj=25°C Tj=25°C Tj=25°C Tj= 125°C Tj= 125°C Tj= 125°C MIN TYP MAX MAX MIN TYP TYP MAX MAX MAX Value 30 1.5 0.2 1 60 50 1.5 0.01 2 200 100 V/µs µs Unit mA V V µs mA mA V mA VD=VDRM RL=3.3kΩ VD=VDRM IG = 200mA dIG/dt = 1.5A/µs IG= 1.2 IGT IT= 500mA ITM= 50A tp= 380µs VDRM VRRM Rated Rated Linear slope up to VD=67%VDRM gate open VD=67%VDRM ITM = 50A VR= 25V dITM/dt=30 A/µs dVD/dt= 50V/µs 2/5 TYP 212 ---> TYP 2012 F ig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact. Fig.3 : Average temperature. on-state current versus case Fig.4 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 Zt h( j-c) 0.1 Zt h( j-a) tp (s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1E +2 5 E+2 Fig.5 : Relative variation of gate trigger current versus junction temperature. Fig.6 : Non repetitive surge peak on-state current versus number of cycles. 3/5 TYP 212 ---> TYP 2012 F ig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10 ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). Fig.9 : Peak capacitor discharge current versus pulse width. Fig.10 : Allowable peak capacitor discharge current versus initial junction temparature. 4/5 TYP 212 ---> TYP 2012 PACKAGE MECHANICAL DATA TO220AB Plastic REF. A H G I J D B F P O L C M = N= A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.00 10.40 0.393 0.409 15.20 15.90 0.598 0.625 13.00 14.00 0.511 0.551 6.20 6.60 0.244 0.259 3.50 4.20 0.137 0.165 2.65 2.95 0.104 0.116 4.40 4.60 0.173 0.181 3.75 3.85 0.147 0.151 1.23 1.32 0.048 0.051 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 4.80 5.40 0.188 0.212 1.14 1.70 0.044 0.066 0.61 0.88 0.024 0.034 Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5