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US1M-DM

US1M-DM

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SMA

  • 描述:

    US1M-DM

  • 数据手册
  • 价格&库存
US1M-DM 数据手册
US1A- DM THRU US1M- DM SURFACE MOUNT ULTRAFAST RECOVERY RECTIFIER Reverse Voltage – 50 to 1000 V Forward Current – 1 A Features • For surface mount applications • Low profile package • Built-in strain relief • Easy pick and place • Ultrafast recovery times for high efficiency • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Mechanical Data • Case: SMA (DO-214AC) molded plastic • Terminals: Solder plated, solderable per MIL-STD-750, method 2026 guaranteed • Polarity: Color band denotes cathode end Maximum Ratings and Electrical Characteristics Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols US1A US1B US1D US1G US1J US1K US1M Units Parameter Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at TL = 100 OC IF(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC Method) IFSM 30 A Maximum Forward Voltage at 1 A VF 1 1.4 1.7 V Maximum DC Reverse Current TA = 25 C at Rated DC Blocking Voltage TA = 100 OC IR 5 50 μA Typical Junction Capacitance at 4 V, 1 MHz CJ 17 pF Maximum Reverse Recovery Time at IF = 0.5 A, IR = 1 A, Irr = 0.25 A trr O Typical Thermal Resistance 1) Operating and Storage Temperature Range 1) 50 75 RJA 50 TJ ,TStg - 55 to + 150 ns C/W O C O Mounted on P.C.B. with 0.2 X 0.2" (5 X 5 mm) copper pad areas. ® Dated : 14/04/2008 H US1A- DM THRU US1M- DM ® Dated : 14/04/2008 H
US1M-DM 价格&库存

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