VIPER12AS13TR

® VIPer12ADIP VIPer12AS LOW POWER OFF LINE SMPS PRIMARY SWITCHER TYPICAL POWER CAPABILITY Mains type European (195 - 265 Vac) US / Wide range (85 - 265 Vac) SO-8 8W 5W DIP8 13 W 8W SO-8 DIP-8 ORDER CODES PACKAGE n n n n FIXED 60 KHZ SWITCHING FREQUENCY 9V TO 38V WIDE RANGE VDD VOLTAGE CURRENT MODE CONTROL AUXILIARY UNDERVOLTAGE LOCKOUT WITH HYSTERESIS SOURCE SO-8 DIP-8 TUBE T&R VIPer12AS VIPer12AS13TR VIPer12ADIP n HIGH VOLTAGE START UP CURRENT n OVERTEMPERATURE, OVERCURRENT AND OVERVOLTAGE PROTECTION WITH AUTORESTART DESCRIPTION The VIPer12A combines a dedicated current mode PWM controller with a high voltage Power BLOCK DIAGRAM MOSFET on the same silicon chip. Typical applications cover off line power supplies for battery charger adapters, standby power supplies for TV or monitors, auxiliary supplies for motor control, etc. The internal control circuit offers the following benefits: – Large input voltage range on the VDD pin accommodates changes in auxiliary supply voltage. This feature is well adapted to battery charger adapter configurations. – Automatic burst mode in low load condition. – Overvoltage protection in hiccup mode. DRAIN ON/OFF REGULATOR 60kHz OSCILLATOR INTERNAL SUPPLY OVERTEMP. DETECTOR R1 S FF PWM LATCH Q R2 R3 R4 VDD 8/14.5V _ BLANKING + OVERVOLTAGE LATCH Q + _ 0.23 V + 42V _ S R FF 230 Ω 1 kΩ FB SOURCE September 2002 1/15 VIPer12ADIP / VIPer12AS PIN FUNCTION Name Function Power supply of the control circuits. Also provides a charging current during start up thanks to a high voltage current source connected to the drain. For this purpose, an hysteresis comparator monitors the VDD voltage and provides two thresholds: - VDDon: Voltage value (typically 14.5V) at which the device starts switching and turns off the start up current source. - VDDoff: Voltage value (typically 8V) at which the device stops switching and turns on the start up current source. Power MOSFET source and circuit ground reference. Power MOSFET drain. Also used by the internal high voltage current source during start up phase for charging the external VDD capacitor. Feedback input. The useful voltage range extends from 0V to 1V, and defines the peak drain MOSFET current. The current limitation, which corresponds to the maximum drain current, is obtained for a FB pin shorted to the SOURCE pin. VDD SOURCE DRAIN FB CURRENT AND VOLTAGE CONVENTIONS IDD ID I FB FB VDD CONTROL DRAIN VDD VFB VIPer12A VD SOURCE CONNECTION DIAGRAM SOURCE SOURCE FB VDD 1 2 3 4 8 7 6 5 DRAIN DRAIN DRAIN DRAIN SOURCE SOURCE FB VDD 1 2 3 4 8 7 6 5 DRAIN DRAIN DRAIN DRAIN SO-8 DIP8 2/15 VIPer12ADIP / VIPer12AS ABSOLUTE MAXIMUM RATINGS Symbol VDS(sw) VDS(st) ID VDD IFB VESD Tj Tc Tstg Parameter Switching Drain Source Voltage (Tj=25 ... 125°C) Start Up Drain Source Voltage (Tj=25 ... 125°C) Continuous Drain Current Supply Voltage Feedback Current Electrostatic Discharge: Machine Model (R=0Ω; C=200pF) Charged Device Model Junction Operating Temperature Case Operating Temperature Storage Temperature (See note 1) (See note 2) Value -0.3 ... 730 -0.3 ... 400 Internally limited 0 ... 50 3 200 1.5 Internally limited -40 to 150 -55 to 150 Unit V V A V mA V kV °C °C °C Note: 1. This parameter applies when the start up current source is off. This is the case when the VDD voltage has reached VDDon and remains above VDDoff. 2. This parameter applies when the start up current source is on. This is the case when the VDD voltage has not yet reached VDDon or has fallen below V DDoff. THERMAL DATA Symbol Rthj-case Parameter Thermal Resistance Junction-Pins for: SO-8 DIP8 Thermal Resistance Junction-Ambient for: SO-8 DIP8 (See note 1) (See note 1) Max Value 25 15 55 45 Unit °C/W Rthj-amb °C/W Note: 1. When mounted on a standard single-sided FR4 board with 200 mm² of Cu (at least 35 µm thick) connected to all DRAIN pins. ELECTRICAL CHARACTERISTICS (Tj=25°C, VDD=18V, unless otherwise specified) POWER SECTION Symbol BVDSS IDSS RDSon tf tr Coss Parameter Drain-Source Voltage Off State Drain Current Static Drain-Source On State Resistance Fall Time Rise Time Drain Capacitance Test Conditions ID=1mA; VFB=2V VDS=500V; VFB=2V; Tj=125°C ID=0.2A ID=0.2A; Tj=100°C ID=0.1A; VIN=300V ID=0.2A; VIN=300V VDS=25V (See fig.1) (See note 1) (See fig.1) (See note 1) 27 Min. 730 0.1 30 54 Typ. Max. Unit V mA Ω ns ns pF 100 50 40 Note: 1. On clamped inductive load 3/15 VIPer12ADIP / VIPer12AS ELECTRICAL CHARACTERISTICS (Tj=25°C, VDD=18V, unless otherwise specified) SUPPLY SECTION Symbol IDDch IDDoff IDD0 IDD1 DRST VDDoff VDDon VDDhyst VDDovp Parameter Start Up Charging Current Start Up Charging Current in Thermal Shutdown Test Conditions VDS=100V; VDD=5V ...VDDon (See fig. 2) VDD=5V; VDS=100V Tj > TSD - THYST 0 3 (Note 1) (See fig. 3) (See fig. 2 & 3) (See fig. 2 & 3) (See fig. 2) 7 13 5.8 38 4.5 16 8 14.5 6.5 42 9 16 7.2 46 5 Min. Typ. -1 Max. Unit mA mA mA mA % V V V V Operating Supply Current I =2mA FB Not Switching Operating Supply Current I =0.5mA; I =50mA FB D Switching Restart Duty Cycle VDD Undervoltage Shutdown Threshold VDD Start Up Threshold VDD Threshold Hysteresis VDD Overvoltage Threshold Note: 1. These test conditions obtained with a resistive load are leading to the maximum conduction time of the device. OSCILLATOR SECTION Symbol FOSC Parameter Oscillator Frequency Total Variation Test Conditions VDD=VDDoff ... 35V; Tj=0 ... 100°C Min. 54 Typ. 60 Max. 66 Unit kHz PWM COMPARATOR SECTION Symbol GID IDlim IFBsd RFB td tb tONmin Parameter IFB to ID Current Gain Peak Current Limitation IFB Shutdown Current FB Pin Input Impedance Current Sense Delay to Turn-Off Blanking Time Minimum Turn On Time ID=0mA ID=0.2A VFB=0V Test Conditions (See fig. 4) (See fig. 4) (See fig. 4) (See fig. 4) 0.32 Min. Typ. 320 0.4 0.9 1.2 200 500 700 0.48 A mA kΩ ns ns ns Max. Unit OVERTEMPERATURE SECTION Symbol TSD THYST Parameter Thermal Shutdown Temperature Thermal Shutdown Hysteresis Test Conditions (See fig. 5) (See fig. 5) Min. 140 Typ. 170 40 Max. Unit °C °C 4/15 VIPer12ADIP / VIPer12AS Figure 1 : Rise and Fall Time ID C C