VIPer12ADIP - E VIPer12AS - E
Low Power OFF-Line SMPS Primary Switcher
Features
■ ■ ■ ■ ■ ■
Fixed 60kHZ Switching Frequency 9V to 38V Wide Range VDD Voltage Current Mode Control Auxiliary Undervoltage Lockout with Hysteresis High Voltage Start-up Current Source Overtemperature, Overcurrent and Overvoltage Protection with Auto-Restart Typical power capability – European (195 - 265 Vac) 8W for SO-8, 13W for DIP-8 – European (85 - 265 Vac) 5W for SO-8, 8W for DIP-8
SO-8 DIP-8
■
Description
The VIPer12A combines a dedicated current mode PWM controller with a high voltage Power MOSFET on the same silicon chip.
Block diagram
Typical applications cover off line power supplies for battery charger adapters, standby power supplies for TV or monitors, auxiliary supplies for motor control, etc. The internal control circuit offers the following benefits: – Large input voltage range on the VDD pin accommodates changes in auxiliary supply voltage. This feature is well adapted to battery charger adapter configurations. – Automatic burst mode in low load condition. – Overvoltage protection in HICCUP mode.
DRAIN
ON/OFF REGULATOR 60kHz OSCILLATOR
INTERNAL SUPPLY
OVERTEMP. DETECTOR
R1
Q R2 R3 R4
S FF
PWM LATCH
VDD 8/14.5V
_ BLANKING + OVERVOLTAGE LATCH Q
+ _ 0.23 V
+ 42V _ S
R FF
230 Ω
1 kΩ FB
SOURCE
January 2006
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Contents
VIPer12ADIP/ AS - E
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 1.2 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 3 4 5 6 7 8 9 10 11 12
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin connections and function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Rectangular U-I Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Wide range of VDD voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Feedback pin principle of operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Startup sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Overvoltage threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Operation pictures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Mechanical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
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Electrical data
1
1.1
Electrical data
Maximum rating
Stressing the device above the rating listed in the “Absolute Maximum Ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. Table 1.
Symbol VDS(sw) VDS(st) ID VDD IFB VESD TJ TC Tstg
Absolute maximum rating
Parameter Switching drain source voltage (TJ = 25 ... 125°C) Note 1 Start-up drain source voltage (TJ = 25 ... 125°C) Note 2 Continuous drain current Supply voltage Feedback current Electrostatic discharge: Machine model (R = 0Ω; C = 200pF) Charged device model Junction operating temperature Case operating temperature Storage Temperature Value -0.3 ... 730 -0.3 ... 400 Internally limited 0 ... 50 3 200 1.5 Internally limited -40 to 150 -55 to 150 Unit V V A V mA V kV °C °C °C
Note:
1 2
This parameter applies when the start-up current source is OFF. This is the case when the VDD voltage has reached VDDon and remains above V DDoff. This parameter applies when the start up current source is on. This is the case when the VDD voltage has not yet reached VDDon or has fallen below VDDoff.
1.2
Thermal data
Table 2.
Symbol RthJC RthJA
Thermal data
Parameter Thermal Resistance Junction-case Thermal Resistance Ambient-case (1) Max Max
mm 2
SO-8 25 55
DIP-8 15 45
Unit °C/W °C/W
1. When mounted on a standard single-sided FR4 board with 200 connected to all DRAIN pins.
of Cu (at least 35 µm thick)
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Electrical characteristics
VIPer12ADIP/ AS - E
2
Electrical characteristics
TJ = 25°C, VDD = 18V, unless otherwise specified Table 3.
Symbol BVDSS IDSS rDS(on) tf tr COSS
Power section
Parameter D rain-source voltage O FF State drain current Static drain-source ON state resistance Fall time R ise time D rain capacitance Test conditions ID = 1mA; VFB = 2V VDS = 500V; VFB = 2V; TJ = 125°C ID = 0.2A ID = 0.2A; TJ = 100°C ID = 0.1A; VIN = 300V Note 1 (See Figure 8 on page 13 ) ID = 0.2A; VIN = 300V Note 1 (See Figure 8 on page 13 ) VDS = 25V 27 100 50 40 Min. 730 0.1 30 54 Typ. Max. Unit V mA Ω ns ns pF
Note:
1
On clamped inductive load Table 4.
Symbol IDDch
Supply section
Parameter Start-up charging current Start-up charging current in thermal shutdown Operating supply current not switching Operating supply current switching Restart duty-cycle VDD Undervoltage shutdown threshold VDD Start-up threshold VDD Threshold hysteresis VDD Overvoltage threshold Test conditions VDS = 100V; VDD = 5V ...VDDon (See Figure 9 on page 13) VDD = 5V; VDS = 100V TJ > TSD - THYST IFB = 2mA IFB = 0.5mA; ID = 50mA N ote 2 (See Figure 10 on page 13) (See Figure 9, Figure 10 on page 13) (See Figure 9, Figure 10 on page 13)) (See Figure 9 on page 13) 7 13 5.8 38 0 Min. Typ. -1 Max. Unit mA
IDDoff
mA
IDD0 IDD1 DRST VDDoff VDDon VDDhyst VDDovp
3 4.5 16 8 14.5 6.5 42
5
mA mA %
9 16 7.2 46
V V V V
2
These test conditions obtained with a resistive load are leading to the maximum conduction time of the device.
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Electrical characteristics
Table 5.
Symbol FOSC
Oscillation section
Parameter Oscillator frequency total variation Test conditions VDD = VDDoff ... 35V; TJ = 0 ... 100°C Min. 54 Typ. 60 Max. 66 Unit kHz
Table 6.
Symbol G ID IDlim IFBsd RFB td tb tONmin
PWM Comparator section
Parameter IFB to ID current gain Peak current limitation IFB Shutdown current FB Pin input impedance Current sense delay to turn-OFF Blanking time Minimum Turn-ON time Test Conditions (See Figure 11 on page 14) VFB = 0V (See Figure 11 on page 14) (See Figure 11 on page 14) ID = 0mA (See Figure 11 on page 14) ID = 0.2A 0.32 Min. Typ. 320 0.4 0.9 1.2 200 500 700 0.48 A mA kΩ ns ns ns Max. Unit
Table 7.
Symbol TSD THYST
Overtemperature section
Parameter Thermal shutdown temperature Thermal shutdown hysteresis Test Conditions (See Figure 12 on page 14) (See Figure 12 on page 14) Min. 140 Typ. 170 40 Max. Unit °C °C
Table 8.
Typical Power Capability
Mains type SO-8 8W 5W DIP-8 13W 8W
European (195 - 265 Vac) US / Wide range (85 - 265 Vac)
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Pin connections and function
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3
Pin connections and function
Figure 1. Pin connection
SOURCE SOURCE FB VDD
1 2 3 4
8 7 6 5
DRAIN DRAIN DRAIN DRAIN
SOURCE SOURCE FB VDD
1 2 3 4
8 7 6 5
DRAIN DRAIN DRAIN DRAIN
SO-8
DIP-8
Figure 2.
Current and voltage conventions
IDD ID
IFB
FB
VDD
CONTROL
DRAIN
VDD VFB
VIPer12A
VD
SOURCE
Table 9.
Pin Name
Pin function
Pin Function Power supply of the control circuits. Also provides a charging current during start up thanks to a high voltage current source connected to the drain. For this purpose, an hysteresis comparator monitors the VDD voltage and provides two thresholds: - VDDon: Voltage value (typically 14.5V) at which the device starts switching and turns off the start up current source. - VDDoff: Voltage value (typically 8V) at which the device stops switching and turns on the start up current source. Power MOSFET source and circuit ground reference. Power MOSFET drain. Also used by the internal high voltage current source during start up phase for charging the external VDD capacitor. Feedback input. The useful voltage range extends from 0V to 1V, and defines the peak drain MOSFET current. The current limitation, which corresponds to the maximum drain current, is obtained for a FB pin shorted to the SOURCE pin.
VDD
SOURCE DRAIN
FB
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Rectangular U-I Output characteristics
4
Rectangular U-I Output characteristics
Figure 3. Rectangular U-I output characteristics for battery charger
A complete regulation scheme can achieve combined and accurate output characteristics. Figure 3. presents a secondary feedback through an optocoupler driven by a TSM101. This device offers two operational amplifiers and a voltage reference, thus allowing the regulation of both output voltage and current. An integrated OR function performs the combination of the two resulting error signals, leading to a dual voltage and current limitation, known as a rectangular output characteristic. This type of power supply is especially useful for battery chargers where the output is mainly used in current mode, in order to deliver a defined charging rate. The accurate voltage regulation is also convenient for Li-ion batteries which require both modes of operation.
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W ide range of VDD voltage
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Wide range of VDD voltage
The VDD pin voltage range extends from 9V to 38V. This feature offers a great flexibility in design to achieve various behaviors. In Figure 3 on page 7 a forward configuration has been chosen to supply the device with two benefits:
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As soon as the device starts switching, it immediately receives some energy from the auxiliary winding. C5 can be therefore reduced and a small ceramic chip (100nF) is sufficient to insure the filtering function. The total start up time from the switch on of input voltage to output voltage presence is dramatically decreased. The output current characteristic can be maintained even with very low or zero output voltage. Since the TSM101 is also supplied in forward mode, it keeps the current regulation up whatever the output voltage is.The VDD pin voltage may vary as much as the input voltage, that is to say with a ratio of about 4 for a wide range application.
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Feedback pin principle of operation
6
Feedback pin principle of operation
A feedback pin controls the operation of the device. Unlike conventional PWM control circuits which use a voltage input (the inverted input of an operational amplifier), the FB pin is sensitive to current. Figure 4. presents the internal current mode structure. Figure 4. Internal current control structure
The Power MOSFET delivers a sense current Is which is proportional to the main current Id. R2 receives this current and the current coming from the FB pin. The voltage across R2 is then compared to a fixed reference voltage of about 0.23V. The MOSFET is switched off when the following equation is reached:
R 2 ⋅ ( I S + IFB ) = 0.23V
By extracting IS:
0.23V I S = --------------- – I FB R2
Using the current sense ratio of the MOSFET GID:
⎠ ⎞
0.23V I D = G I D ⋅ I S = G I D ⋅ --------------- – I FB R2
⎝ ⎛
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Feedback pin principle of operation
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The current limitation is obtained with the FB pin shorted to ground (V FB = 0V). This leads to a negative current sourced by this pin, and expressed by:
0.23V I FB = – --------------R1
By reporting this expression in the previous one, it is possible to obtain the drain current limitation IDlim:
⎠ ⎞
1 1 IDlim = G I D ⋅ 0.23V ⋅ ------ + -----R2 R1
⎝ ⎛
In a real application, the FB pin is driven with an optocoupler as shown on Figure 4. which acts as a pull up. So, it is not possible to really short this pin to ground and the above drain current value is not achievable. Nevertheless, the capacitor C is averaging the voltage on the FB pin, and when the optocoupler is off (start up or short circuit), it can be assumed that the corresponding voltage is very close to 0V. For low drain currents, the formula (1) is valid as long as IFB satisfies IFB < IFBsd, where IFBsd is an internal threshold of the VIPer12A. If IFB exceeds this threshold the device will stop switching. This is represented on Figure 11 on page 14, and IFBsd value is specified in the PWM COMPARATOR SECTION. Actually, as soon as the drain current is about 12% of Idlim, that is to say 50 mA, the device will enter a burst mode operation by missing switching cycles. This is especially important when the converter is lightly loaded. Figure 5. IFB Transfer function
It is then possible to build the total DC transfer function between ID and IFB as shown on Figure 5 on page 10 . This figure also takes into account the internal blanking time and its associated minimum turn on time. This imposes a minimum drain current under which the device is no more able to control it in a linear way. This drain current depends on the primary inductance value of the transformer and the input voltage. Two cases may occur, depending on the value of this current versus the fixed 50mA value, as described above.
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Startup sequence
7
Startup sequence
Figure 6. Startup sequence
This device includes a high voltage start up current source connected on the drain of the device. As soon as a voltage is applied on the input of the converter, this start up current source is activated as long as V DD is lower than VDDon. When reaching VDDon, the start up current source is switched off and the device begins to operate by turning on and off its main power MOSFET. As the FB pin does not receive any current from the optocoupler, the device operates at full current capacity and the output voltage rises until reaching the regulation point where the secondary loop begins to send a current in the optocoupler. At this point, the converter enters a regulated operation where the FB pin receives the amount of current needed to deliver the right power on secondary side. This sequence is shown in Figure 6. Note that during the real starting phase tss, the device consumes some energy from the V DD capacitor, waiting for the auxiliary winding to provide a continuous supply. If the value of this capacitor is too low, the start up phase is terminated before receiving any energy from the auxiliary winding and the converter never starts up. This is illustrated also in the same figure in dashed lines.
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Overvoltage threshold
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Overvoltage threshold
An overvoltage detector on the VDD pin allows the VIPer12A to reset itself when VDD exceeds VDDovp. This is illustrated in Figure 7., which shows the whole sequence of an overvoltage event. Note that this event is only latched for the time needed by VDD to reach VDDoff, and then the device resumes normal operation automatically. Figure 7. Overvoltage Sequence
VDD
VDDovp
VDDon VDDoff
t
VDS
t
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Operation pictures
9
Operation pictures
Figure 8. Rise and Fall time
Figure 9.
Start-up V DD current
Figure 10. Restart duty-cycle
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Operation pictures Figure 11. Peak drain current Vs. feedback current
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Figure 12. Thermal shutdown
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VIPer12ADIP/ AS - E Figure 13. Switching frequency Vs. temperature
Operation pictures
Figure 14. Current Limitation vs. Temperature
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Mechanical Data
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10
Mechanical Data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
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Mechanical Data
Table 10.
DIP8 Mechanical Data
Dimensions Databook (mm) Ref. Nom. A A1 A2 b b2 c D E E1 e eA eB L 2.92 3.30 Gr. 470 0.38 2.92 0.36 1.14 0.20 9.02 7.62 6.10 3.30 0.46 1.52 0.25 9.27 7.87 6.35 2.54 7.62 10.92 3.81 4.95 0.56 1.78 0.36 10.16 8.26 7.11 Min Max 5.33
Package Weight
Figure 15. Package Dimensions
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Mechanical Data Table 11. SO8 Mechanical Data
Dimensions Databook (mm) Ref. Nom. A A1 1.35 0.10 Min
VIPer12ADIP/ AS - E
Max 1.75 0.25
A2 B C D E e H h L k ddd
1.10 0.33 0.19 4.80 3.80 1.27 5.80 0.25 0.40 8° (max.)
1.65 0.51 0.25 5.00 4.00
6.20 0.50 1.27
0.1
Figure 16. Package Dimensions
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Order codes
11
Order codes
Table 12. Order codes
Package SO-8 SO-8 DIP-8 Shipment Tape and Reel Tube Tube
Part Number VIPER12ASTR-E VIPer12AS - E VIPer12ADIP - E
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Revision history
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Revision history
Table 13.
Date 09-Jan-2006
Document revision history
Revision 1 Initial release. Changes
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Revision history
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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