VN02ANSP

® VN02ANSP HIGH SIDE SMART POWER SOLID STATE RELAY T YPE VN02ANSP s V DSS 60 V R DS( on ) 0.35 Ω I OUT 7A V CC 36 V s s s s s OUTPUT CURRENT (CONTINUOUS): 7A @ Tc=25oC LOGIC LEVEL 5V COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT FAST DEMAGNETIZATION OF INDUCTIVE LOAD 10 1 DESCRIPTION The VN02ANSP is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The diagnostic output indicates an over temperature status. Fast turn-off of inductive load is achieved by negative (-18 V) load voltage at turn-off. BLOCK DIAGRAM PowerSO-10TM July 1998 1/9 VN02ANSP ABSOLUTE MAXIMUM RATING Symb ol V (BR)DSS I OUT IR I IN -V CC I STAT V ESD P tot Tj T s tg Parameter Drain-Source Breakdown Voltage Output Current (cont.) Reverse Output Current Input Current Reverse Supply Voltage Status Current (sink) Electrostatic Discharge (1.5 k Ω, 100 pF) Power Dissipation at T c ≤ 25 C Junction Operating Temperature Storage Temperature o Valu e 60 7 -7 ± 10 -4 ± 10 2000 31 -40 to 150 -55 to 150 Unit V A A mA V mA V W o o C C CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS 2/9 VN02ANSP THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient ($) Max Max 4 50 o o C/W C/W ($) When mounted using minimum recommended pad size on FR-4 board ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; Tcase = 25 oC unless otherwise specified) POWER Symb ol V CC * R on IS Parameter Supply Voltage On State Resistance Supply Current o Test Cond ition s -40 C < T j < 125 C I OUT = 3 A I OUT = 1 A VCC = 30 V Tj = 125 o C o Min. 7 Typ . Max. 36 0.35 0.6 1 9 7 Un it V Ω Ω mA mA mA Off St ate V CC = 30 V On State VCC = 30 V On State VCC = 30 V Tj = 125 o C SWITCHING Symb ol t d(on) tr t d(of f) tf (di/dt) on (di/dt) off V DEMAG Parameter Turn-on Delay Time Of Output Current Rise Time O f O utput Current Test Cond ition s I OUT = 3 A Resistive Load Input Rise T ime < 0.1 µ s I OUT = 3 A Resistive Load Input Rise T ime < 0.1 µ s Min. Typ . 15 15 14 4.5 o Max. Un it µs µs µs µs Turn-off Delay Time O f I OUT = 3 A Resistive Load Output Current Input Rise T ime < 0.1 µ s Fall T ime Of Output Current Turn-on Current Slope Turn-off Current Slope Inductive Load Clamp Voltage I OUT = 3 A Resistive Load Input Rise T ime < 0.1 µ s I OUT = 3 A I OUT = I OV I OUT = 3 A I OUT = I OV I OUT = 3 A 25 C < Tj < 125 C 25 o C < T j < 125 o C 25 C < Tj < 125 C 25 o C < T j < 125 o C -40 o C < T j < 125 o C -24 o o o 0.5 1 1.5 4 -18 -14 A/ µ s A/ µ s A/ µ s A/ µ s V LOGIC INPUT (-40 oC ≤ Tj ≤ 125 oC unless otherwise specified) Symb ol VI L VI H V I(hyst.) I IN Parameter Input Low Level Voltage Input High Level Voltage Input Hysteresis Voltage Input Current VI N = 5 V VI N = 2 V V I N = 0.8 V I IN = 10 mA I IN = -10 mA 2 0.5 250 25 5.5 6 -0.7 -0.3 600 300 Test Cond ition s Min. Typ . Max. 0.8 (*) Un it V V V µA µA µA V V V ICL Input Clamp Voltage 3/9 VN02ANSP ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS (-40 oC ≤ Tj ≤ 125 oC unless otherwise specified) Symb ol V STAT I STAT V USD V SCL I OV I av I DOFF T TSD TR Parameter Status Voltage Output Low Under Voltage Shut Down Status Clamp Voltage Over Current Average Current In Short Circuit Leakage Current Thermal Shut-down Temperature Reset Temperature I STAT = 10 mA I STAT = -10 mA R LOAD < 10 m Ω R LOAD < 10 m Ω V CC = 30 V 140 125 T c = 85 C o Test Cond ition s I STAT = 1.6 mA Min. Typ . Max. 0.4 10 Un it V µA V V V A A Status Leakage Current V STAT = 5 V 3.5 5.5 6 6 -0.7 15 0.6 7 -0.3 1 mA o C C o (*) The Vih is internally clamped at about 6V. It is possible to connect this pin to a higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. TRUTH TABLE INPUT Normal Operation O ver-temperature Under-voltage L H H X DIAGNOST IC H H L H O UTPUT L H L L Figure 1: Waveforms 4/9 VN02ANSP FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates over temperature conditions. The truth table shows input, diagnostic output status and output voltage level in normal operation and fault conditions. The output signals are processed by internal logic. To protect the device against short circuit and over current conditions, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to 125 oC the switch is automatically turned on again. To ensure the protection in all VCC conditions and in all the junction temperature range it is necessary to limit the voltage drop across Drain and Source (pin 3 and 5) at 28V according to: Vds = VCC - IOV * (Ri + Rw + Rl) where: Ri = internal resistence of Power Supply Rw = Wires resistance Rl = Short Circuit resistance Driving inductive loads, an internal function of the device ensures the fast demagnetization with typical voltage (Vdemag) of -18V. This function allows the reduction of the power dissipation according to the formula: Pdem = 0.5 * Lload * (Iload)2 * [(VCC + Vdem)/Vdem] * f Figure 2: Over Current Test Circuit where f = Switching Frequency Based on this formula it is possible to know the value of inductance and/or current to avoid a thermal shut-down. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simpliest way to protect the device against a continuous reverse battery voltage (-36V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (Fig. 3). The consequences of the voltage drop across this diode are as follows: If the input is pulled to power GND, a negative voltage of -Vf is seen by the device. (Vil, Vih thresholds and Vstat are increased by Vf with respect to power GND). The undervoltage shut-down level is increased by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in fig. 4), which becomes the common signal GND for the whole control board avoiding shift of Vih, Vil and Vstat. This solution allows the use of a standard diode. 5/9 VN02ANSP Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 4: Typical Application Circuit With Separate Signal Ground 6/9 VN02ANSP RDS(on) vs Junction Temperature RDS(on) vs Supply Voltage RDS(on) vs Output Current Input Voltages vs Junction Temperature Output Current Derating 7/9 VN02ANSP PowerSO-10 MECHANICAL DATA DIM. MIN. A A1 B c D D1 E E1 E2 E3 E4 e F H h L q α 0 o mm TYP. MAX. 3.65 0.10 0.60 0.55 9.60 7.60 9.50 7.40 7.60 6.35 6.10 1.27 1.25 13.80 0.50 1.20 1.70 8o 1.80 0.047 1.35 14.40 0.049 0.543 MIN. 0.132 0.000 0.016 0.013 0.370 0.291 0.366 0.283 0.283 0.240 0.232 3.35 0.00 0.40 0.35 9.40 7.40 9.30 7.20 7.20 6.10 5.90 inch TYP. MAX. 0.144 0.004 0.024 0.022 0.378 0.300 0.374 0.291 0.300 0.250 0.240 0.050 0.053 0.567 0.002 0.071 0.067 B 0.10 A B 10 = H = A F A1 = 6 = = = E = 1 5 e 0.25 M = E2 E3 E1 E4 = = A = SEATING PLANE DETAIL ”A” Q B C h D = D1 = = = SEATING PLANE = A1 L DETAIL ”A” α 0068039-C 8/9 VN02ANSP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. 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