VN02HSP-E

VN02H ® HIGH SIDE SMART POWER SOLID STATE RELAY TYPE VN02H ■ ■ ■ ■ ■ ■ V DSS R DS(on ) I OUT V CC 60 V 0.4 Ω 6A 36 V OUTPUT CURRENT (CONTINUOUS): 6A @ Tc=25oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT VERY LOW STAND-BY POWER DISSIPATION DESCRIPTION The VN02H is a monolithic devices made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level compatible. The open drain diagnostic output indicates open circuit (no load) and over temperature status. PENTAWATT (vertical) PENTAWATT (horizontal) PENTAWATT (in-line) ORDER CODES: PENTAWATT vertical VN02H PENTAWATT horizontal VN02H(011Y) PENTAWATT in-line VN02H(012Y) BLOCK DIAGRAM March 1999 1/10 VN02H ABSOLUTE MAXIMUM RATING Symbol Parameter V (BR)DSS Drain-Source Breakdown Voltage Value Unit 60 V Output Current (cont.) 6 A IR Reverse Output Current -6 A I IN Input Current ±10 mA I OUT VCC Supply Voltage (for t = 400 ms) 60 V -V CC Reverse Supply Voltage -4 V I STAT Status Current ±10 mA V ESD Electrostatic Discharge (1.5 kΩ, 100 pF) 2000 V P tot Power Dissipation at T c ≤ 25 C 28 Tj Junction Operating Temperature -40 to 150 o C -55 to 150 o C T stg o Storage Temperature CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS 2/10 W VN02H THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 4.4 60 o C/W C/W ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified) POWER Symbol Parameter Test Conditions VCC Supply Voltage see note 1 R on On State Resistance I OUT = 3 A I OUT = 3 A Supply Current Off State On State IS Min. Typ. 5 T j = 25 o C o T j ≥ 25 C Max. Unit 36 V 0.8 0.4 Ω Ω 50 20 µA mA SWITCHING Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(on) Turn-on Delay Time Of Output Current I OUT = 3 A Resistive Load Input Rise Time < 0.1 µs T j = 25 o C 5 10 20 µs Rise Time Of Output Current I OUT = 3 A Resistive Load Input Rise Time < 0.1 µs T j = 25 o C 5 15 45 µs Turn-off Delay Time Of Output Current I OUT = 3 A Resistive Load Input Rise Time < 0.1 µs T j = 25 o C 5 15 30 µs Fall Time Of Output Current I OUT = 3 A Resistive Load Input Rise Time < 0.1 µs T j = 25 o C 2 6 15 µs (di/dt) on Turn-on Current Slope I OUT = 3 A I OUT = IOV 25 ≤ T j ≤ 140 o C 0.05 0.15 0.5 2 A/µs A/µs (di/dt) off Turn-off Current Slope I OUT = 3 A I OUT = IOV 25 ≤ T j ≤ 140 o C 0.1 0.4 2 4 A/µs A/µs V demag Inductive Load Clamp Voltage I OUT = 3 A L = 1 mH -7 -4 -2 V Min. Typ. Max. Unit 0.8 V (*) V tr t d(off) tf LOGIC INPUT Symbol Parameter V IL Input Low Level Voltage VIH Input High Level Voltage V I(hyst.) Input Hysteresis Voltage I IN V ICL Test Conditions 2 0.5 Input Current V IN = 5 V Input Clamp Voltage I IN = 10 mA I IN = -10 mA 5.5 V 250 500 µA 6 -0.7 -0.3 V V 3/10 VN02H ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS Symbol V STAT (•) V USD V SCL (•) Parameter Status Voltage Output Low Test Conditions Under Voltage Shut Down Status Clamp Voltage Min. Typ. Max. Unit 0.4 V 5 V 6 -0.7 -0.3 V V 1.5 5 ms 28 A 1.8 A 70 mA 60 µA I STAT = 1.6 mA 2.5 I STAT = 10 mA I STAT = -10 mA 5.5 t SC Switch-off Time in Short Circuit Condition at Start-Up R LOAD < 10 mΩ T c = 25 o C V CC = 13 V I OV Over Current R LOAD < 10 mΩ V CC = 13 V I AV Average Current in Short Circuit R LOAD < 10 mΩ T c = 85 o C V CC = 13 V I OL Open Load Current Level 9 < VCC < 32 V I OUT Leakage Current Off State T TSD Thermal Shut-down Temperature 140 160 o C TR Reset Temperature 125 145 o C 0.9 5 V OUT = 0 V (*) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. (•) Status determination > 100 µs after the switching edge. Note 1 : Above VCC = 36 V the output voltage is clamped to 36 V. Power dissipation increases and the device turns off if junction temperature reaches thermal shutdown temperature. FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to about 125 oC the switch is automatically turned on again. To ensur the protection in all VCC conditions and in all the junction temperature range it is necessary to limit the voltage drop across Drain and Source (pin 3 and 5) at 29 V. The device is able to withstand a load dump according the test pulse 5 at level III of the ISO TR/1 7631. Above VCC = 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off if junction temperature reaches thermal shutdown temperature. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to 4/10 insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3). The consequences of the voltage drop across this diode are as follows: - If the input is pulled to power GND, a negative voltage of -VF is seen by the device. (VIL, VIH thresholds and VSTAT are increased by VF with respect to power GND). - The undervoltage shutdown level is increased by VF. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit infig. 4), which becomes the common signal GND for the whole control board. In this way no shift of VIH, VIL and VSTAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment. VN02H TRUTH TABLE INPUT OUTPUT DIAGNOSTIC Normal Operation L H L H H H Open Circuit (No Load) L H L H H L Over-temperature L H L H H L Under-voltage L H L L H H Figure 1: Waveforms Figure 2: Over Current Test Circuit 5/10 VN02H Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 4: Typical Application Circuit With Separate Signal Ground 6/10 VN02H PENTAWATT (VERTICAL) MECHANICAL DATA DIM. A C D D1 E F F1 G G1 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia MIN. 2.4 1.2 0.35 0.8 1 3.2 6.6 mm TYP. 3.4 6.8 10.05 MAX. 4.8 1.37 2.8 1.35 0.55 1.05 1.4 3.6 7 10.4 10.4 MIN. inch TYP. 0.094 0.047 0.014 0.031 0.039 0.126 0.260 0.134 0.268 0.396 17.85 15.75 21.4 22.5 2.6 15.1 6 0.703 0.620 0.843 0.886 3 15.8 6.6 0.102 0.594 0.236 4.5 4 3.65 MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.142 0.276 0.409 0.409 0.118 0.622 0.260 0.177 0.157 3.85 0.144 0.152 P010E 7/10 VN02H PENTAWATT (HORIZONTAL) MECHANICAL DATA mm DIM. MIN TYP inch MAX MIN TYP MAX A 4.30 4.80 0.169 0.189 C 1.17 1.37 0.046 0.054 D 2.40 2.80 0.094 0.110 E 0.35 0.55 0.014 0.021 F 0.80 1.05 0.031 0.041 G 3.20 3.60 0.126 0.142 G1 6.60 7.00 0.260 0.275 H1 9.30 9.70 0.366 H2 0.382 10.40 0.409 H3 10.05 10.40 0.396 0.409 L2 14.60 15.20 0.575 0.598 L3 3.50 4.10 0.137 0.161 L5 2.60 3.00 0.102 0.118 L6 15.10 15.80 0.594 0.622 L7 6.00 6.60 0.236 V4 Diam. 90 3.65 o 0.260 90 3.85 0.144 o 0.151 PO1OL1_E 8/10 VN02H PENTAWATT (IN-LINE) MECHANICAL DATA DIM. A C D E F F2 F3 G G1 H1 H2 H3 L2 L3 L4 L5 L6 L7 V4 Diam. MIN 4.30 1.17 2.40 0.35 0.80 1.10 1.25 3.20 6.60 9.30 mm TYP 10.05 23.05 25.30 0.90 2.60 15.10 6.00 MAX 4.80 1.37 2.80 0.55 1.05 1.40 1.55 3.60 7.00 9.70 10.40 10.40 23.80 26.10 2.90 3.00 15.80 6.60 MIN 0.169 0.046 0.094 0.014 0.031 0.043 0.049 0.126 0.260 0.366 0.396 0.907 0.996 0.035 0.102 0.594 0.236 90o 3.65 inch TYP MAX 0.189 0.054 0.110 0.021 0.041 0.055 0.061 0.142 0.275 0.382 0.409 0.409 0.937 1.027 0.114 0.118 0.622 0.260 90o 3.85 0.144 0.151 P010D 9/10 VN02H Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 10/10