VN03SPTR-E

VN03SP  HIGH SIDE SMART POWER SOLID STATE RELAY T YPE V DSS R DS(on) I n( *) V CC VN03SP 60 V 0.5 Ω 0.7 A 26 V ■ ■ ■ ■ ■ ■ ■ MAXIMUM CONTINUOUS OUTPUT CURRENT (#):9 A @ Tc=85oC 5 V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT INDUCTIVE LOAD FAST DEMAGNETIZATION VERY LOW STAND-BY POWER DISSIPATION ) s ( ct u d o 10 e t e l Pr 1 PowerSO-10 DESCRIPTION The VN03SP is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The open drain diagnostic output indicates: open load in off state, and in on state, output shorted to o s b O ) s ( t c u d o VCC and overtemperature. Fast demagnetization of inductive loads is archivied by negative (-18V) load voltage at turn-off. r P e t e l o s b O (*) In = Nominal current according to ISO definition for high side automotive switch (see note 1) (#) The maximum continuous output current is the the current at Tc = 85 oC for a battery voltage of 13V which does not activate self protection. July 1998 1/9 VN03SP ABSOLUTE MAXIMUM RATING Symb ol V (BR)DSS I OUT Parameter Value Unit 60 V Output Current (cont.) at T c = 85 C 4 A o -4 A ±10 mA -4 V ±10 mA 2000 V Drain-Source Breakdown Voltage o IR Reverse Output Current at T c = 85 C I IN Input Current -V CC Reverse Supply Voltage I STAT Status Current V ESD Electrostatic Discharge (1.5 kΩ, 100 pF) P tot Tj o Power Dissipation at T c = 85 C Junction Operating Temperature T s tg -40 to 150 du Storage Temperature -55 to 150 CONNECTION DIAGRAMS e t e ol ) (s t c u d o r P e t e l o s b O CURRENT AND VOLTAGE CONVENTIONS 2/9 ) s ( ct 14 s b O o r P W o C o C VN03SP THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient ($) Max Max o 4.5 50 o C/W C/W ($) When mounted using minimum recommended pad size on FR-4 board ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified) POWER Symb ol VCC Parameter Test Cond ition s Supply Voltage o In(*) Nominal Current T c = 85 C R on On State Resistance I OUT = 0.7 A I OUT = 0.7 A Supply Current Off St ate On State IS V DS(MAX) V DS(on) ≤ 0.5 (note 1) Min. Typ . Max. Un it 5.5 13 26 V 0.7 A T j = 25 o C Ω Ω 50 15 µA mA 3.6 V Max. Un it uc o Tj ≥ 25 C d o r Tc = 85 o C Maximum Voltage Drop I OUT = 4 A ) s ( t 1 0.5 SWITCHING t e l o P e Symb ol Parameter t d(on)(^) Turn-on Delay Time Of Output Current I OUT = 0.7 A Resistive Load Input Rise T ime < 0.1 µs µs Rise Time O f O utput Current s b O 15 I OUT = 0.7 A Resistive Load Input Rise T ime < 0.1 µs 10 µs Turn-off Delay Time O f I OUT = 0.7 A Resistive Load Output Current Input Rise T ime < 0.1 µs 15 µs I OUT = 0.7 A Resistive Load Input Rise T ime < 0.1 µs 4 µs t r (^) t d(off )(^) tf (^) Fall T ime Of Output Current Turn-on Current Slope (di/dt) off Turn-off Current Slope r P e t e l o s b O Inductive Load Clamp Voltage ) (s Min. ct u d o (di/dt) on V demag Test Cond ition s Typ . I OUT = 0.7 A I OUT = I OV 0.05 0.5 1 A/µs A/µs I OUT = 0.7 A I OUT = I OV 0.14 3 3 A/µs A/µs I OUT = 0.7 A L = 1 mH -24 -18 -14 V Test Cond ition s Min. Typ . Max. Un it 0.8 V (•) V LOGIC INPUT Symb ol Parameter VI L Input Low Level Voltage VI H Input High Level Voltage V I(hyst.) Input Hysteresis Voltage I IN V ICL 2 0.5 Input Current VI N = 5 V VI N = 2 V V I N = 0.8 V Input Clamp Voltage I IN = 10 mA I IN = -10 mA 250 V 500 250 25 5.5 6 -0.7 -0.3 µA µA µA V V 3/9 VN03SP ELECTRICAL CHARACTERISTICS(continued) PROTECTION AND DIAGNOSTICS Symb ol Parameter Test Cond ition s V STAT Status Voltage Output Low V USD Under Voltage Shut Down V SCL Status Clamp Voltage I STAT = 10 mA I STAT = -10 mA Over Current R LOAD < 10 mΩ I OV Min. Typ . Max. Un it 0.4 V I STAT = 1.6 mA I OL Open Load Current Level 5 T TSD Thermal Shut-down Temperature 140 TR Reset Temperature 125 V OL Open Load Voltage Level Off-State (note 2) t 1(on) Open Load Filtering Time (note 3) t 1(of f) Open Load Filtering Time (note 3) t 2(of f) Open Load Filtering Time (note 3) t povl Status Delay t po l Status Delay R LOAD < 10 mΩ s ( t c u d o (note 3) 6 -0.7 V V 28 o Average Current in Short Circuit (note 3) V -40 T c 125 o C I AV )- 5 Tc = 85 C e t e ol s b O A (s) 0.9 A ct 35 70 Pr u d o mA o C o C 2.5 3.75 5 V 1 5 10 ms 1 5 10 ms 1 5 10 ms 5 10 µs 50 700 µs (^) See Switchig Time Waveforms () The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. note 1:The Nominal Current is the current at Tc = 85 oC for battery voltage of 13V which produces a voltage drop of 0.5 V note 2:IOL (off) = (VCC -VOL)/ROL (see figure) note 3:t1(on): minimum open load duration which acctivates the status output t1(off): minimum load recovery time which desactivates the status output t2(off): minimum on time after thermal shut down which desactivates status output tpo vl tpol: ISO definition (see figure) r P e t e l o s b O Note 2 Relevant Figure 4/9 Note 3 Relevant Figure VN03SP typical voltage (Vdemag) of -18V. This function allows to greatly reduce the power dissipation according to the formula: Pdem = 0.5 • Lload • (Iload)2• [(VCC+Vdemag)/Vdemag] •f where f = switching frequency and Vdemag = demagnetization voltage Based on this formula it is possible to know the value of inductance and/or current to avoid a thermal shut-down. The maximum inductance which causes the chip temperature to reach the shut down temperature in a specific thermal environment, is infact a function of the load current for a fixed VCC, Vdemag and f. Switching Time Waveforms ) s ( ct FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open load conditions in off state as well as in on state, output shorted to VCC and overtemperature. The truth table shows input, diagnostic and output voltage level in normal operation and in fault conditions. The output signals are processed by internal logic. The open load diagnostic output has a 5 ms filtering. The filter gives a continuous signal for the fault condition after an initial delay of about 5 ms. This means that a disconnection during normal operation, with a duration of less than 5 ms does not affect the status output. Equally, any re-connection of less than 5 ms during a disconnection duration does not affect the status output. No delay occur for the status to go low in case of overtemperature conditions. From the falling edge of the input signal the status output initially low in fault condition (over temperature or open load) will go back with a delay (tpovl)in case of overtemperature condition and a delay (tpol) in case of open load. These feature fully comply with International Standard Office (I.S.O.) requirement for automotive High Side Driver. To protect the device against short circuit and over current conditions, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to 125 oC the switch is automatically turned on again. In short circuit the protection reacts with virtually no delay, the sensor being located in the region of the die where the heat is generated. Driving inductive loads, an internal function of the device ensures the fast demagnetizationwith a ) (s t c u d o r P e s b O t e l o u d o PROTECTING THE DEVICE AGAIST LOAD DUMP - TEST PULSE 5 The device is able to withstand the test pulse No. 5 at level II (Vs = 46.5V) according to the ISO T/R 7637/1 without any external component. This means that all functions of the device are performed as designed after exposure to disturbance at level II. The VN06SP is able to withstand the test pulse No.5 at level III adding an external resistor of 150 ohm between GND pin and ground plus a filter capacitor of 1000 µF between VCC pin and ground (if RLOAD ≤ 20 Ω). r P e t e l o s b O PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between GND pin and ground, as shown in the typical application circuit (fig.3). The consequences of the voltage drop across this diode are as follows: If the input is pulled to power GND, a negative voltage of -Vf is seen by the device. (Vil, Vih thresholds and Vstat are increased by Vf with respect to power GND). The undervoltage shutdown level is increa- sed by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [6] (see application circuit in fig. 4), which becomes the common signal GND for the whole control board avoiding shift of Vih, Vil and Vstat. This solution allows the use of a standard diode. 5/9 VN03SP TRUTH TABLE INPUT O UTPUT DIAGNOST IC Normal Operation L H L H H H O pen Circuit (No Load) H H L O ver-temperature H L L Under-voltage X L H Short load to V CC L H L Figure 1: Waveforms ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O Figure 2: Over Current Test Circuit 6/9 s b O VN03SP Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection ) s ( ct u d o r P e t e l o s b O Figure 4: Typical Application Circuit With Separate Signal Ground ) (s t c u d o r P e t e l o s b O 7/9 VN03SP PowerSO-10 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 3.35 3.65 0.132 0.144 A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 0.378 D 9.40 9.60 0.370 D1 7.40 7.60 0.291 E 9.30 9.50 0.366 E1 7.20 7.40 0.283 E2 7.20 7.60 0.283 E3 6.10 6.35 0.240 E4 5.90 6.10 0.232 e F 1.25 1.35 H 13.80 14.40 h 0.50 L 1.20 q )- 1.70 o α s ( t c 0 s b O 1.80 0.250 0.240 0.050 0.049 0.053 0.543 0.567 0.002 0.047 0.071 0.067 0.10 A B 6 5 e 0.25 B = E4 = E1 = = = 1 = E3 = E2 = E = H Pr 0.300 B = = t e l o 10 u d o 0.291 = r P e 0.374 8o u d o s b O e t e ol 1.27 ) s ( ct 0.300 SEATING PLANE DETAIL ”A” A C M Q h D = D1 = = = SEATING PLANE A F A1 A1 L DETAIL ”A” α 0068039-C 8/9 VN03SP ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics  1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 9/9