VN05HSP

VN05HSP HIGH SIDE SMART POWER SOLID STATE RELAY TARGET DATA TYPE VN05HSP s VDSS 45 V R DS(on ) 0.18 Ω I OUT 12 A VCC 36 V s s s s s OUTPUT CURRENT (CONTINUOUS): o 6A @ Tc=25 C 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT VERY LOW STAND-BY POWER DISSIPATION 10 1 DESCRIPTION The VN05HSP is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level compatible. The open drain diagnostic output indicates open circuit (no load) and over temperature status. BLOCK DIAGRAM PowerSO-10™ May 1997 1/8 VN05HSP ABSOLUTE MAXIMUM RATING Symbol V(BR)DSS I OUT IR I IN VCC VCC -VCC I STAT VESD Pto t Tj T stg ERB Output Current (con t.) Reverse Output Curren t Input Current Supply Voltage (continuou s) Supply Voltage (pulsed) Reverse Supply Voltage Status Current Electrostat ic Discharge (1.5 k Ω, 100 pF) Power Dissipation at T c ≤ 25 C o Parameter Drain-Source Breakdown Voltage Value Internally Clamped 12 -12 ± 10 40 60 -4 ± 10 2000 52 -40 to 150 -55 to 150 350 Unit V A A mA V V V mA V W o o Junction Operating Temperat ure Storage Temperature Power Mos Avalanche Energy C C mJ CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS 2/8 VN05HSP THERMAL DATA R thj-ca se Rt hj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.4 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified) POWER Symbol VCC R on IS VClamp Parameter Supply Voltage On State Resista nce Supply Curren t V CC - VOUT I OUT = 6 A I OUT = 6 A Off State On State I OUT = 6 A Test Conditions see note 1 Tj = 25 o C T j ≥ 25 o C 40 45 Min. 5.5 Typ. 13 Max. 36 0.18 0.36 50 15 55 Unit V Ω Ω µA mA V SWITCHING Symbol t d(on) tr t d( off) tf (di/dt) on (di/dt)of f Vde mag Parameter Turn-on Delay Time Of Output Current Rise Time Of Output Current Test Conditions I OUT = 6 A Resistive Load Input Rise Time < 0.1 µ s T j = 25 o C I OUT = 6 A Resistive Load Input Rise Time < 0.1 µ s T j = 25 o C Min. Typ. 15 30 20 10 0. 5 2 2 4 -7 -4 -2 Max. Unit µs µs µs µs A/ µ s A/ µ s A/ µ s A/ µ s V Turn-off Delay Time Of I OUT = 6 A Resistive Load Output Current Input Rise Time < 0.1 µ s T j = 25 o C Fall Time Of Output Current Turn-on Current Slope Turn-off Current Slope Inductive Load Clamp Voltage I OUT = 6 A Resistive Load Input Rise Time < 0.1 µ s T j = 25 o C I OUT = 6 A I OUT = IOV I OUT = 6 A I OUT = IOV I OUT = 6 A 25 ≤ T j ≤ 140 o C 25 ≤ T j ≤ 140 o C L = 1 mH LOGIC INPUT Symbol VI L VIH V I(hyst .) I IN VI CL Parameter Input Low Level Voltage Input High Level Voltage Input Hysteresis Voltage Input Current Input Clamp Voltage VI N = 5 V I IN = 10 mA I IN = -10 mA 6 -0.7 2 0.5 50 Test Conditions Min. Typ. Max. 0. 8 (*) Unit V V V µA V V 3/8 VN05HSP ELECTRICAL CHARACTERISTICS (Continued) PROTECTION AND DIAGNOSTICS Symbol Parameter Test Conditions I STAT = 1.6 mA Min. Typ. Max. 0. 4 5. 5 I STAT = 10 mA I STAT = -10 mA R LOAD < 10 mΩ R LOAD < 10 mΩ T c = 85 C 5 140 125 o Unit v V V V VSTAT ( • ) Status Voltage Output Low V USD VSCL ( • ) I OV I AV I OL T TSD TR Under Voltage Shut Down Status Clamp Voltage Over Curren t Average Current in Short Circuit Open Load Curren t Level Termal Shut-Down Temperature Reset Temperature 6 -0.7 20 1.4 180 A A mA o C C o (*) The VIH is internally clamped at 6V about. it is possible to connect thispin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. (•) Status determinaion > 100 µs after the switching edge. Note 1: Above VCC = 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off it junction temperature reaches thermal shutdown temperature. FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to about 125 oC the switch is automatically turned on again. To ensur the protection in all VCC conditions and in all the junction temperature range it is necessary to limit the voltage drop across Drain and Source (pin 3 and 5) at 29 V. The device is able to withstand a load dump according the test pulse 5 at level III of the ISO TR/1 7631. Above VCC = 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off if junction temperature reaches thermal shutdown temperature. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3). The consequences of the voltage drop across this diode are as follows: - If the input is pulled to power GND, a negative voltage of -VF is seen by the device. (VIL, VIH thresholds and VSTAT are increased by VF with respect to power GND). - The undervoltage shutdown level is increased by VF. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit infig. 4), which becomes the common signal GND for the whole control board. In this way no shift of VIH, VIL and VSTAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment. 4/8 VN05HSP TRUTH TABLE INPUT Normal Ope ration Open Circuit (No Lo ad) Over-temperature Under-voltage L H L H L H X X OUTPUT L H L H L L L L DIAGNOSTIC H H H L H L H H Figure 1: Waveforms Figure 2: Over Current Test Circuit 5/8 VN05HSP Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 4: Typical Application Circuit With Separate Signal Ground 6/8 VN05HSP PowerSO-10 MECHANICAL DATA DIM. MIN. A A1 B c D D1 E E1 E2 E3 E4 e F H h L q α 0 o mm TYP. MAX. 3.65 0.10 0.60 0.55 9.60 7.60 9.50 7.40 7.60 6.35 6.10 1.27 1.25 13.80 0.50 1.20 1.70 8 o inch MIN. 0.132 0.000 0.016 0.013 0.370 0.291 0.366 0.283 0.283 0.240 0.232 0.050 1.35 14.40 1.80 0.049 0.543 0.002 0.047 0.067 0.071 0.053 0.567 TYP. MAX. 0.144 0.004 0.024 0.022 0.378 0.300 0.374 0.291 0.300 0.250 0.240 3.35 0.00 0.40 0.35 9.40 7.40 9.30 7.20 7.20 6.10 5.90 B 0.10 A B 10 = H = A F A1 = 6 = = = E = 1 5 = E2 E3 E1 E4 = = A = SEATING PLANE DETAIL ”A” Q e 0.25 M B C h D = D1 = = = SEATING PLANE = A1 L DETAIL ”A” α 0068039-C 7/8 VN05HSP Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequence of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No s license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical component in life support devices or systems without express s written approval of SGS-THOMSON Microelectonics . © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 8/8