VN31(012Y)

VN31 ISO HIGH SIDE SMART POWER SOLID STATE RELAY Table 1. General Features Figure 1. Package Type VDSS RDS(on) In (1) VCC VN31 60 V 0.03 Ω 11.5 A 26 V ) s ( ct Note: 1. In= Nominal current according to ISO definition for high side automotive switch. The Nominal Current is the current at Tc = 85 °C for battery voltage of 13V which produces a voltage drop of 0.5 V. u d o r P e ■ MAXIMUM CONTINUOUS OUTPUT CURRENT (note 2): 31 A @ Tc= 85°C ■ 5V LOGIC LEVEL COMPATIBLE INPUT ■ THERMAL SHUT-DOWN ■ UNDER VOLTAGE PROTECTION ■ OPEN DRAIN DIAGNOSTIC OUTPUT ■ INDUCTIVE LOAD FAST DEMAGNETIZATION ■ VERY LOW STAND-BY POWER DISSIPATION PENTAWATT (vertical) t e l o ) (s s b O t c u Note: 2. The maximum continuous output current is the current at Tc = 85 °C for a battery voltage of 13 V which does not activate self protection. od r P e PENTAWATT (horizontal) PENTAWATT (in-line) DESCRIPTION The VN31 is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The open drain diagnostic output indicates: open load in off state and in on state, output shorted to VCC and overtemperature. Fast demagnetization of inductive loads is achieved by negative (-18V) load voltage at turn-off. t e l o s b O Table 2. Order Codes Package Tube Tape and Reel PENTAWATT Vert. VN31 - PENTAWATT Hor. VN31(011Y) - PENTAWATT In line VN31(012Y) - REV. 2 June 2004 1/13 VN31 Figure 2. Block Diagram ) s ( ct u d o r P e t e l o Table 3. Absolute Maximum Ratings Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage Value Unit 60 V Output Current (cont.) at Tc = 85 °C 31 A IR Reverse Output Current at Tc = 85 °C –31 A IIN Input Current ±10 mA –4 V ±10 mA 2000 V Power Dissipation at Tc = 85 °C 54 W Junction Operating Temperature -40 to 150 °C Storage Temperature -55 to 150 °C IOUT ISTAT Status Current P e t e l o bs Tj 2/13 Tstg s ( t c ro Reverse Supply Voltage Ptot )- du – VCC VESD O s b O Electrostatic Discharge (1.5 kΩ, 100 pF) VN31 Figure 3. Connection Diagram ) s ( ct Figure 4. Current and Voltage Conventions u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Table 4. Thermal Data Symbol Parameter Value Unit Rthj-case Thermal Resistance Junction-case Max 1.2 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 60 °C/W 3/13 VN31 ELECTRICAL CHARACTERISTICS (VCC = 13 V; –40 ≤ Tj ≤ 125 °C unless otherwise specified) Table 5. Power Symbol VCC In Parameter Test Conditions Supply Voltage (3) Ron IS VDS(MAX) Nominal Current Tc = 85 °C; VDS(on) ≤ 0.5 On State Resistance IOUT = 11.5 A IOUT = 11.5 A; Tj = 25 °C Supply Current Off State; Tj ≥ 25 °C On State Maximum Voltage Drop IOUT = 25 A; Tc = 85 °C Min. Typ. Max. Unit 5.5 13 26 V 11.5 A 0.06 0.03 Ω Ω 50 15 µA mA ) s ( ct 1.5 V Note: 3. In= Nominal current according to ISO definition for high side automotive switch The Nominal Current is the current at Tc = 85 °C for battery voltage of 13V which produces a voltage drop of 0.5 V. u d o Table 6. Switching Symbol Parameter Test Conditions Turn-on Delay Time Of Output Current IOUT = 11.5 A; Resistive Load Input Rise Time < 0.1 µs Rise Time Of Output Current IOUT = 11.5 A; Resistive Load Input Rise Time < 0.1 µs Turn-off Delay Time Of Output Current IOUT = 11.5 A; Resistive Load Input Rise Time < 0.1 µs Fall Time Of Output Current IOUT = 11.5 A; Resistive Load Input Rise Time < 0.1 µs (di/dt)on Turn-on Current Slope IOUT = 11.5 A IOUT = IOV (di/dt)off Turn-off Current Slope Vdemag Inductive Load Clamp Voltage td(on) (4) tr(4) td(off)(4) tf(4) Pr Min. e t e l so ) (s b O u d o ct r P e Max. Unit 90 µs 100 µs 140 µs 50 µs 0.08 0.5 1 A/µs A/µs 0.2 3 3 A/µs A/µs –24 –18 –14 V Min. Typ. Max. Unit 0.8 V Note 5 V IOUT = 11.5 A IOUT = IOV IOUT = 11.5 A; L = 1 mH Typ. Note: 4. See Switching Time Waveforms. t e l o Table 7. Logic Input Symbol bs VIL O Parameter Input Low Level Voltage VIH Input High Level Voltage VI(hyst) Input Hysteresis Voltage IIN VICL Test Conditions Input Current Input Clamp Voltage 2 0.5 VIN = 5 V VIN = 2 V VIN = 0.8 V IIN = 10 mA IIN = –10 mA 250 V 500 250 25 5.5 6 –0.7 –0.3 µA µA µA V V Note: 5. The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. 4/13 VN31 ELECTRICAL CHARACTERISTICS (cont’d) Table 8. Protection and Diagnostics Symbol Parameter VSTAT Status Voltage Output Low VUSD Under Voltage Shut Down VSCL Status Clamp Voltage IOV Test Conditions Min. Typ. ISTAT = 1.6 mA Max. Unit 0.4 V 5 V ISTAT = 10 mA ISTAT = –10 mA 6 –0.7 V V Over Current RLOAD < 10 mΩ; –40 ≤ Tc ≤ 125 °C 140 A IAV Average Current in Short Circuit RLOAD < 10 mΩ; Tc = 85 °C 2.5 A IOL Open Load Current Level TTSD TR 5 Thermal Shut-down Temperature 140 Reset Temperature 125 VOL(6) Open Load Voltage Level t1(on)(7) Open Load Filtering Time t1(off)(7) Open Load Filtering Time t2(off)(7) Open Load Filtering Time tpovl(7) Status Delay tpol(7) Status Delay Off-State ) s ( ct -O mA du °C 3.75 5 V 5 10 ms 1 5 10 ms 1 5 10 ms 5 10 µs P e 1 o s b 1250 °C ro 2.5 let ) s ( ct 600 50 700 µs Note: 6. IOL(off) = (VCC -VOL)/ROL (see figure 5). 7. t1(on): minimum open load duration which activates the status output; t1(off): minimum load recovery time which desactivates the status output; t2(off): minimum on time after thermal shut down which desactivates status output; tpovl tpol: ISO definition (see figure 6). u d o Pr Figure 5. Note 6 relevant figure e t e ol Figure 6. Note 7 relevant figure s b O 5/13 VN31 Figure 7. Switching Time Waveforms device ensures the fast demagnetization with a typical voltage (Vdemag) of -18V. This function allows to greatly reduce the power dissipation according to the formula: Pdem = 0.5 • Lload • (Iload)2 • [(VCC+Vdemag)/ Vdemag] • f where f = switching frequency and Vdemag = demagnetization voltage Based on this formula it is possible to know the value of inductance and/or current to avoid a thermal shut-down. The maximum inductance which causes the chip temperature to reach the shut down temperature in a specific thermal environment, is infact a function of the load current for a fixed VCC, Vdemag and f. ) s ( ct u d o FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open load conditions in off state as well as in on state, output shorted to VCC and overtemperature. The truth table shows input, diagnostic and output voltage level in normal operation and in fault conditions. The output signals are processed by internal logic. The open load diagnostic output has a 5 ms filtering. The filter gives a continuous signal for the fault condition after an initial delay of about 5 ms. This means that a disconnection during normal operation, with a duration of less than 5 ms does not affect the status output. Equally, any reconnection of less than 5 ms during a disconnection duration does not affect the status output. No delay occur for the status to go low in case of overtemperature conditions. From the falling edge of the input signal the status output initially low in fault condition (over temperature or open load) will go back with a delay (tpovl)in case of overtemperature condition and a delay (tpol) in case of open load. These feature fully comply with International Standard Office (I.S.O.) requirement for automotive High Side Driver. To protect the device against short circuit and over current conditions, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 °C. When the temperature returns to 125 °C the switch is automatically turned on again. In short circuit the protection reacts with virtually no delay, the sensor being located in the region of the die where the heat is generated. Driving inductive loads, an internal function of the ) (s t c u d o r P e t e l o s b O 6/13 PROTECTING THE DEVICE AGAIST LOAD DUMP - TEST PULSE 5 The device is able to withstand the test pulse No. 5 at level II (Vs = 46.5V) according to the ISO T/R 7637/1 without any external component. This means that all functions of the device are performed as designed after exposure to disturbance at level II. The VN31 is able to withstand the test pulse No.5 at level III adding an external resistor of 150 ohm between pin 1 and ground plus a filter capacitor of 1000 µF between pin 3 and ground (if RLOAD ≤ 20 Ω). r P e t e l o s b O PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1(GND) and ground, as shown in the typical application circuit (Figure 10). The consequences of the voltage drop across this diode are as follows: – If the input is pulled to power GND, a negative voltage of -Vf is seen by the device. (VIL, VIH thresholds and VSTAT are increased by Vf with respect to power GND). – The undervoltage shutdown level is increased by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in Figure 11), which becomes the common signal GND for the whole control board avoiding shift of VIH, VIL and VSTAT. This solution allows the use of a standard diode. VN31 Table 9. Truth Table Input Output Diagnostic Normal Operation L H L H H H Open Circuit (No Load) H H L Over-temperature H L L Under-voltage X L H Short load to VCC L H L Figure 8. Waveforms ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Figure 9. Over Current Test Circuit 7/13 VN31 Figure 10. Typical Application Circuit With A Schottky Diode For Reverse Supply Protection ) s ( ct Figure 11. Typical Application Circuit With Separate Signal Ground r P e u d o t e l o ) (s t c u d o r P e t e l o s b O 8/13 s b O VN31 PACKAGE MECHANICAL Table 10. PENTAWATT (vertical) Mechanical Data millimeters Symbol Min Typ Max A 4.8 C 1.37 D 2.4 2.8 D1 1.2 1.35 E 0.35 0.55 F 0.8 1.05 F1 1 G 3.2 3.4 G1 6.6 6.8 H2 H3 10.05 L2 23.05 23.4 L3 25.3 25.65 L5 2.6 L6 15.1 L7 6 Dia. 3.65 ) s ( ct ) s ( ct 1.4 e t e l -O o s b 3.6 o r P du 7 10.4 10.4 23.8 26.1 3 15.8 6.6 3.85 Figure 12. PENTAWATT (vertical) Package Dimensions u d o r P e t e l o s b O Note: Drawing is not to scale. 9/13 VN31 Table 11. PENTAWATT (horizontal) Mechanical Data millimeters Symbol Min Typ Max A 4.8 C 1.37 D 2.4 2.8 D1 1.2 1.35 E 0.35 0.55 F 0.8 1.05 F1 1 1.4 G 3.2 3.4 3.6 G1 6.6 6.8 7 ) s ( ct H2 10.4 H3 10.05 L 14.2 L1 5.7 L2 14.6 L3 3.5 L5 2.6 L6 15.1 L7 6 Dia. 3.65 10.4 ro o s b O ) s ( t c r P e t e l o s b O Note: Drawing is not to scale. 10/13 P e let Figure 13. PENTAWATT (horizontal) Package Dimensions u d o du 15 6.2 15.2 4.1 3 15.8 6.6 3.85 VN31 Table 12. PENTAWATT (in-line) Mechanical Data millimeters Symbol Min Typ Max A 4.8 C 1.37 D 2.4 2.8 D1 1.2 1.35 E 0.35 0.55 F 0.8 1.05 F1 1 1.4 G 3.2 3.4 3.6 G1 6.6 6.8 7 ) s ( ct H2 10.4 H3 10.05 L2 23.05 23.4 L3 25.3 25.65 L5 2.6 L6 15.1 L7 6 Dia. 3.65 du 10.4 t e l o P e bs ro 23.8 26.1 3 15.8 6.6 3.85 O ) Figure 14. PENTAWATT (in-line) Package Dimensions s ( t c u d o r P e t e l o s b O Note: Drawing is not to scale. 11/13 VN31 REVISION HISTORY Table 13. Revision History Date Revision Description of Changes September-1994 1 First Issue 18-June-2004 2 Stylesheet update. No content change. ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 12/13 s b O VN31 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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