VN31

VN31 ISO HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE VN31 s V DSS 60 V R DS( on) 0.03 Ω I n (*) 11.5 A VC C 26 V s s s s s s MAXIMUM CONTINUOUS OUTPUT CURRENT (#): 31 A @ Tc= 85oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT INDUCTIVE LOAD FAST DEMAGNETIZATION VERY LOW STAND-BY POWER DISSIPATION PENTAWATT (vertical) PENTAWATT (horizontal) DESCRIPTION The VN31 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The open drain diagnostic output indicates: open load in off state and in on state, output shorted to VCC and overtemperature. Fast demagnetization of inductive loads is archieved by negative (-18V) load voltage at turn-off. BLOCK DIAGRAM PENTAWATT (in-line) ORDER CODES: PENTAWATT vertical VN31 PENTAWATT horizontal VN31 (011Y) PENTAWATT in-line VN31 (012Y) (*) In= Nominal current according to ISO definition for hi gh side automotive switch (see note 1) (#) T he maximum continuous output current is the current at T c = 85 o C for a battery voltage of 13 V which does not activate sel f protection September 1994 1/11 VN31 ABSOLUTE MAXIMUM RATING Symbol V( BR)DSS IO UT IR II N -V CC ISTA T VE SD P tot Tj T stg Parameter Drain-Source Breakdown Voltage Output Current (cont.) at T c = 85 C Reverse Output Current at T c = 85 o C Input Current Reverse Supply Voltage Status Current Electrostatic Discharge (1.5 k Ω , 100 pF) Power Dissipation at T c = 85 C Junction Operating Temperature Storage Temperature o o Value 60 31 -31 ± 10 -4 ± 10 2000 54 -40 to 150 -55 to 150 Unit V A A mA V mA V W o o C C CONNECTION DIAGRAM CURRENT AND VOLTAGE CONVENTIONS 2/11 VN31 THERMAL DATA R thj-cas e Rthj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.2 60 o o C/W C/W ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified) POWER Symbol VC C In(*) R on IS V DS(MAX) Parameter Supply Voltage Nominal Current On State Resistance Supply Current T c = 85 C I OU T = 11.5 A I OU T = 11.5 A Off State On State o Test Conditions V DS(on ) ≤ 0.5 (note 1) Tj = 25 o C Min. 5.5 11.5 Typ. 13 Max. 26 Unit V A Ω Ω µA mA V 0.06 0.03 50 15 1.5 T j ≥ 25 oC T c = 85 o C Maximum Voltage Drop I OU T = 25 A SWITCHING Symbol td(on) (^) t r (^) td( off)(^) tf (^) (di/dt) on (di/dt) off V demag Parameter Test Conditions Min. Typ. 90 100 140 50 0.08 0.2 -24 -18 0.5 1 3 3 -14 Max. Unit µs µs µs µs A/ µ s A/ µ s A/ µ s A/ µ s V Turn-on Delay Time Of I OU T = 11.5 A Resistive Load Output Current Input Rise Time < 0.1 µ s Rise Time Of Output Current I OU T = 11.5A Resistive Load Input Rise Time < 0.1 µ s Turn-off Delay Time Of I OU T = 11.5 A Resistive Load Output Current Input Rise Time < 0.1 µ s Fall Time Of Output Current Turn-on Current Slope Turn-off Current Slope Inductive Load Clamp Voltage I OU T = 11.5 A Resistive Load Input Rise Time < 0.1 µ s I OU T = 11.5 A I OU T = I OV I OU T = 11.5 A I OU T = I OV I OU T = 11.5 A L = 1 mH LOGIC INPUT Symbol V IL V IH V I(hy st.) II N Parameter Input Low Level Voltage Input High Level Voltage Input Hysteresis Voltage Input Current V IN = 5 V V IN = 2 V V IN = 0.8 V I IN = 10 mA I IN = -10 mA 2 0.5 250 25 5.5 6 -0.7 -0.3 500 250 Test Conditions Min. Typ. Max. 0.8 (• ) Unit V V V µA µA µA V V V ICL Input Clamp Voltage 3/11 VN31 ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS (continued) Symbol V STAT V US D V SCL I OV I AV I OL TTS D TR V OL t 1(on) t 1(off ) t 2(off ) tpovl tpol Parameter Status Voltage Output Low Under Voltage Shut Down Status Clamp Voltage Over Current Average Current in Short Circuit Open Load Current Level Thermal Shut-down Temperature Reset Temperature Open Load Voltage Level Open Load Filtering Time Open Load Filtering Time Open Load Filtering Time Status Delay Status Delay Off-State (note 2) (note 3) (note 3) (note 3) (note 3) (note 3) 50 I STAT = 10 mA I STAT = -10 mA R LOA D < 10 m Ω R LOA D < 10 m Ω -40 ≤ T c ≤ 125 o C Tc = 85 C 5 140 125 2.5 1 1 1 3.75 5 5 5 5 700 5 10 10 10 10 o Test Conditions I STAT = 1.6 mA Min. Typ. Max. 0.4 Unit V V V V A A 5 6 -0.7 140 2.5 600 1250 mA o C C o V ms ms ms µs µs (^) See Switchig Time Waveforms ( •) The VI H is internally clamped at 6V about. It is possible to connect this pin to an higher voltage vi a an external resistor cal culated to not exceed 10 mA at the i nput pin. note 1: The Nominal Current is the current at T c = 85 o C for battery voltage of 13V which produces a voltage drop of 0.5 V note 2: IOL( of f) = (VCC -VOL )/R OL (see fi gure) note 3: t1( on ): minimum open load duration which accti vates the status output t 1( of f): mini mum l oad recovery time whi ch desactivates the status output t 2( of f): mini mum on ti me after thermal shut down which desacti vates status output t po vl tpol : ISO definiti on (see figure) Note 2 Relevant Figure Note 3 Relevant Figure 4/11 VN31 Switching Time Waveforms device ensures the fast demagnetization with a typical voltage (Vdemag) of -18V. This function allows to greatly reduce the power dissipation according to the formula: Pdem = 0.5 • Lload • (Iload)2 • [(VCC+Vdemag)/Vdemag] • f where f = switching frequency and Vdemag = demagnetization voltage Based on this formula it is possible to know the value of inductance and/or current to avoid a thermal shut-down. The maximum inductance which causes the chip temperature to reach the shut down temperature in a specific thermal environment, is infact a function of the load current for a fixed VCC, Vdemag and f. PROTECTING THE DEVICE AGAIST LOAD DUMP - TEST PULSE 5 The device is able to withstand the test pulse No. 5 at level II (Vs = 46.5V) according to the ISO T/R 7637/1 without any external component. This means that all functions of the device are performed as designed after exposure to disturbance at level II. The VN31 is able to withstand the test pulse No.5 at level III adding an external resistor of 150 ohm between pin 1 and ground plus a filter capacitor of 1000 µF between pin 3 and ground (if RLOAD ≤ 20 Ω). PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1(GND) and ground, as shown in the typical application circuit (fig.3). The consequences of the voltage drop across this diode are as follows: – If the input is pulled to power GND, a negative voltage of -Vf is seen by the device. (Vil, Vih thresholds and Vstat are increased by Vf with respect to power GND). – The undervoltage shutdown level is increased by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in fig. 4), which becomes the common signal GND for the whole control board avoiding shift of Vih, Vil and Vstat. This solution allows the use of a standard diode. FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open load conditions in off state as well as in on state, output shorted to VCC and overtemperature. The truth table shows input, diagnostic and output voltage level in normal operation and in fault conditions. The output signals are processed by internal logic. The open load diagnostic output has a 5 ms filtering. The filter gives a continuous signal for the fault condition after an initial delay of about 5 ms. This means that a disconnection during normal operation, with a duration of less than 5 ms does not affect the status output. Equally, any re-connection of less than 5 ms during a disconnection duration does not affect the status output. No delay occur for the status to go low in case of overtemperature conditions. From the falling edge of the input signal the status output initially low in fault condition (over temperature or open load) will go back with a delay (tpovl)in case of overtemperature condition and a delay (tpol) in case of open load. These feature fully comply with International Standard Office (I.S.O.) requirement for automotive High Side Driver. To protect the device against short circuit and over current conditions, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to 125 oC the switch is automatically turned on again. In short circuit the protection reacts with virtually no delay, the sensor being located in the region of the die where the heat is generated. Driving inductive loads, an internal function of the 5/11 VN31 TRUTH TABLE INPUT Normal Operation Open Circuit (No Load) Over-temperature Under-voltage Short load to V C C L H H H X L OUTPUT L H H L L H DIAGNOSTIC H H L L H L Figure 1: Waveforms Figure 2: Over Current Test Circuit 6/11 VN31 Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 4: Typical Application Circuit With Separate Signal Ground 7/11 VN31 Pentawatt (vertical) MECHANICAL DATA DIM. A C D D1 E F F1 G G1 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia mm TYP. inch TYP. MIN. 2.4 1.2 0.35 0.8 1 3.2 6.6 10.05 3.4 6.8 MAX. 4.8 1.37 2.8 1.35 0.55 1.05 1.4 3.6 7 10.4 10.4 MIN. 0.094 0.047 0.014 0.031 0.039 0.126 0.260 0.396 0.134 0.268 MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.142 0.276 0.409 0.409 17.85 15.75 21.4 22.5 2.6 15.1 6 4.5 4 3.65 3.85 0.144 3 15.8 6.6 0.102 0.594 0.236 0.703 0.620 0.843 0.886 0.118 0.622 0.260 0.177 0.157 0.152 L E L1 A C D1 L2 L5 L3 D H3 Dia. F H2 L7 L6 F1 G G1 M M1 P010E 8/11 VN31 Pentawatt (horizontal) MECHANICAL DATA DIM. A C D D1 E F F1 G G1 H2 H3 L L1 L2 L3 L5 L6 L7 Dia 10.05 14.2 5.7 14.6 3.5 2.6 15.1 6 3.65 2.4 1.2 0.35 0.8 1 3.2 6.6 3.4 6.8 mm MIN. TYP. MAX. 4.8 1.37 2.8 1.35 0.55 1.05 1.4 3.6 7 10.4 10.4 15 6.2 15.2 4.1 3 15.8 6.6 3.85 0.137 0.102 0.594 0.236 0.144 0.396 0.559 0.094 0.047 0.014 0.031 0.039 0.126 0.260 0.134 0.268 MIN. inch TYP. MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.142 0.276 0.409 0.409 0.590 0244 0.598 0.161 0.118 0.622 0.260 0.152 P010F 9/11 VN31 Pentawatt (In- Line) MECHANICAL DATA DIM. MIN. A C D D1 E F F1 G G1 H2 H3 L2 L3 L5 L6 L7 Dia 10.05 23.05 25.3 2.6 15.1 6 3.65 23.4 25.65 2.4 1.2 0.35 0.8 1 3.2 6.6 3.4 6.8 mm TYP. MAX. 4.8 1.37 2.8 1.35 0.55 1.05 1.4 3.6 7 10.4 10.4 23.8 26.1 3 15.8 6.6 3.85 0.396 0.907 0.996 0.102 0.594 0.236 0.144 0.921 1.010 0.094 0.047 0.014 0.031 0.039 0.126 0.260 0.134 0.268 MIN. inch TYP. MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.142 0.276 0.409 0.409 0.937 1.028 0.118 0.622 0.260 0.152 P010D 10/11 VN31 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 11/11