VN31SP

VN31SP ® HIGH SIDE SMART POWER SOLID STATE RELAY TYPE V DSS R DS(on) I n(*) V CC VN31SP 60 V 0.03 Ω 11.5 A 26 V ■ ■ ■ ■ ■ ■ ■ MAXIMUM CONTINUOUS OUTPUT CURRENT (#):31 A @ Tc=85oC 5 V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT INDUCTIVE LOAD FAST DEMAGNETIZATION VERY LOW STAND-BY POWER DISSIPATION DESCRIPTION The VN31SP is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The open drain diagnostic output indicates: open load in off state, and in on state, output shorted to BLOCK DIAGRAM 10 1 PowerSO-10 VCC and overtemperature. Fast demagnetization of inductive loads is archivied by negative (-18V) load voltage at turn-off. (*) In = Nominal current according to ISO definition for high side automotive switch (see note 1) (#) The maximum continuous output current is the the current at Tc = 85 oC for a battery voltage of 13V which does not activate self protection. September 2013 1/9 VN31SP ABSOLUTE MAXIMUM RATING Symbol V (BR)DSS I OUT Parameter Value Unit Drain-Source Breakdown Voltage 60 V Output Current (cont.) at T c = 85 o C 31 A o IR Reverse Output Current at T c = 85 C -31 A I IN Input Current ±10 mA -V CC Reverse Supply Voltage I STAT Status Current V ESD Electrostatic Discharge (1.5 kΩ, 100 pF) P tot Tj T stg o Power Dissipation at T c = 85 C V mA 2000 V 54 W Junction Operating Temperature -40 to 150 o Storage Temperature -55 to 150 o CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS 2/9 -4 ±10 C C VN31SP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient ($) Max Max o 1.2 50 o C/W C/W ($) When mounted using minimum recommended pad size on FR-4 board ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified) POWER Symbol VCC Parameter Test Conditions Supply Voltage o V DS(on) ≤ 0.5 (note 1) In(*) Nominal Current T c = 85 C R on On State Resistance I OUT = 11.5 A I OUT = 11.5 A Supply Current Off State On State IS V DS(MAX) Min. Typ. Max. Unit 5.5 13 26 V 11.5 A T j = 25 o C T j ≥ 25 o C Maximum Voltage Drop I OUT = 25 A T c = 85 o C 0.06 0.03 Ω Ω 50 15 µA mA 1.5 V Max. Unit SWITCHING Symbol Parameter t d(on) (^) Turn-on Delay Time Of Output Current I OUT = 11.5 A Resistive Load Input Rise Time < 0.1 µs 90 µs Rise Time Of Output Current I OUT = 11.5A Resistive Load Input Rise Time < 0.1 µs 100 µs Turn-off Delay Time Of Output Current I OUT = 11.5 A Resistive Load Input Rise Time < 0.1 µs 140 µs Fall Time Of Output Current I OUT = 11.5 A Resistive Load Input Rise Time < 0.1 µs 50 µs (di/dt) on Turn-on Current Slope I OUT = 11.5 A I OUT = IOV 0.08 0.5 1 A/µs A/µs (di/dt) off Turn-off Current Slope I OUT = 11.5 A I OUT = IOV 0.2 3 3 A/µs A/µs V demag Inductive Load Clamp Voltage I OUT = 11.5 A -24 -18 -14 V Min. Typ. Max. Unit 0.8 V (•) V t r (^) t d(off) (^) tf (^) Test Conditions L = 1 mH Min. Typ. LOGIC INPUT Symbol Parameter V IL Input Low Level Voltage VIH Input High Level Voltage V I(hyst.) Input Hysteresis Voltage I IN V ICL Test Conditions 2 0.5 Input Current V IN = 5 V V IN = 2 V V IN = 0.8 V Input Clamp Voltage I IN = 10 mA I IN = -10 mA 250 V 500 250 25 5.5 6 -0.7 -0.3 µA µA µA V V 3/9 VN31SP ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS Symbol Parameter Test Conditions V STAT Status Voltage Output Low V USD Under Voltage Shut Down V SCL Status Clamp Voltage I STAT = 10 mA I STAT = -10 mA Over Current R LOAD < 10 mΩ I OV Min. Typ. I STAT = 1.6 mA R LOAD < 10 mΩ -40 T c 125 o C o T c = 85 C Max. Unit 0.4 V 5 V 6 -0.7 V V 140 A 2.5 A I AV Average Current in Short Circuit I OL Open Load Current Level 5 T TSD Thermal Shut-down Temperature 140 o C TR Reset Temperature 125 o C V OL Open Load Voltage Level Off-State (note 2) t 1(on) Open Load Filtering Time t 1(off) 600 1250 mA 2.5 3.75 5 V (note 3) 1 5 10 ms Open Load Filtering Time (note 3) 1 5 10 ms t 2(off) Open Load Filtering Time (note 3) 1 5 10 ms t povl Status Delay (note 3) 5 10 µs t pol Status Delay (note 3) 50 700 µs (^) See Switchig Time Waveforms () The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. note 1: The Nominal Current is the current at Tc = 85 oC for battery voltage of 13V which produces a voltage drop of 0.5 V note 2: IOL(off) = (VCC -VOL)/ROL (see figure) note 3: t1(on): minimum open load duration which acctivates the status output t1(off): minimum load recovery time which desactivates the status output t2(off): minimum on time after thermal shut down which desactivates status output tpovl tpol: ISO definition (see figure) Note 2 Relevant Figure 4/9 Note 3 Relevant Figure VN31SP Switching Time Waveforms FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open load conditions in off state as well as in on state, output shorted to VCC and overtemperature. The truth table shows input, diagnostic and output voltage level in normal operation and in fault conditions. The output signals are processed by internal logic. The open load diagnostic output has a 5 ms filtering. The filter gives a continuous signal for the fault condition after an initial delay of about 5 ms. This means that a disconnection during normal operation, with a duration of less than 5 ms does not affect the status output. Equally, any re-connection of less than 5 ms during a disconnection duration does not affect the status output. No delay occur for the status to go low in case of overtemperature conditions. From the falling edge of the input signal the status output initially low in fault condition (over temperature or open load) will go back with a delay (tpovl)in case of overtemperature condition and a delay (tpol) in case of open load. These feature fully comply with International Standard Office (I.S.O.) requirement for automotive High Side Driver. To protect the device against short circuit and over current conditions, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to 125 oC the switch is automatically turned on again. In short circuit the protection reacts with virtually no delay, the sensor being located in the region of the die where the heat is generated. Driving inductive loads, an internal function of the device ensures the fast demagnetization with a typical voltage (Vdemag) of -18V. This function allows to greatly reduce the power dissipation according to the formula: Pdem = 0.5 • Lload • (Iload)2• [(VCC+Vdemag)/Vdemag] •f where f = switching frequency and Vdemag = demagnetization voltage Based on this formula it is possible to know the value of inductance and/or current to avoid a thermal shut-down. The maximum inductance which causes the chip temperature to reach the shut down temperature in a specific thermal environment, is infact a function of the load current for a fixed VCC, Vdemag and f. PROTECTING THE DEVICE AGAIST LOAD DUMP - TEST PULSE 5 The device is able to withstand the test pulse No. 5 at level II (Vs = 46.5V) according to the ISO T/R 7637/1 without any external component. This means that all functions of the device are performed as designed after exposure to disturbance at level II. The VN06SP is able to withstand the test pulse No.5 at level III adding an external resistor of 150 ohm between GND pin and ground plus a filter capacitor of 1000 µF between VCC pin and ground (if RLOAD ≤ 20 Ω). PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between GND pin and ground, as shown in the typical application circuit (fig.3). The consequences of the voltage drop across this diode are as follows: If the input is pulled to power GND, a negative voltage of -Vf is seen by the device. (Vil, Vih thresholds and Vstat are increased by Vf with respect to power GND). The undervoltage shutdown level is increa- sed by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [6] (see application circuit in fig. 4), which becomes the common signal GND for the whole control board avoiding shift of Vih, Vil and Vstat. This solution allows the use of a standard diode. 5/9 VN31SP TRUTH TABLE INPUT OUTPUT DIAGNOSTIC Normal Operation L H L H H H Open Circuit (No Load) H H L Over-temperature H L L Under-voltage X L H Short load to V CC L H L Figure 1: Waveforms Figure 2: Over Current Test Circuit 6/9 VN31SP Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 4: Typical Application Circuit With Separate Signal Ground 7/9 VN31SP PowerSO-10 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 3.35 3.65 0.132 0.144 A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 D 9.40 9.60 0.370 0.378 D1 7.40 7.60 0.291 0.300 E 9.30 9.50 0.366 0.374 E1 7.20 7.40 0.283 0.291 E2 7.20 7.60 0.283 0.300 E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 e 1.27 0.240 0.050 F 1.25 1.35 0.049 0.053 H 13.80 14.40 0.543 0.567 1.80 0.047 h 0.50 L 0.002 1.20 q 1.70 α 0.071 0.067 0o 8o B 0.10 A B 10 = E4 = = = E1 = E3 = E2 = E = = = H 6 = = 1 5 B e 0.25 SEATING PLANE DETAIL "A" A C M Q D h = D1 = = = SEATING PLANE A F A1 A1 L DETAIL "A" α 0068039-C 8/9 VN31SP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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