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VN5E016MHTR-E

VN5E016MHTR-E

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO252-7

  • 描述:

    IC PWR SWITCH N-CHAN 1:1 6HPAK

  • 数据手册
  • 价格&库存
VN5E016MHTR-E 数据手册
VN5E016MH-E 16 mΩ high-side driver with analog current sense for automotive applications Datasheet - production data – Self limiting of fast thermal transients – Protection against loss of ground and loss of VCC – Overtemperature shutdown with auto restart (thermal shutdown) – Reverse battery protected – Electrostatic discharge protection HPak Applications Features Max supply voltage VCC 41 V Operating voltage range VCC 4.5 to 28 V Max on-state resistance (per ch.) RON 16 mΩ Current limitation (typ) ILIMH 73 A Off-state supply current IS 2 µA(1) 1. Typical value with all loads connected. • General – Inrush current active management by power limitation – Very low standby current – 3.0 V CMOS compatible inputs – Optimized electromagnetic emissions – Very low electromagnetic susceptibility – In compliance with the 2002/95/EC European directive • Diagnostic functions – Proportional load current sense – High current sense precision for wide current range – Current sense disable – Overload and short to ground (power limitation) indication – Thermal shutdown indication • Protections – Undervoltage shutdown – Overvoltage clamp – Load current limitation May 2014 This is information on a product in full production. • All types of resistive, inductive and capacitive loads • Suitable as LED driver Description The VN5E016MH-E is a single channel high-side driver manufactured in the ST proprietary VIPower™ M0-5 technology and housed in the tiny HPak package. The VN5E016MH-E is designed to drive 12 V automotive grounded loads delivering protection, diagnostics and easy 3 V and 5 V CMOS compatible interface with any microcontroller. The device integrates advanced protective functions such as load current limitation, inrush and overload active management by power limitation, overtemperature shut-off with auto restart and overvoltage active clamp. A dedicated analog current sense pin is associated with every output channel in order to provide enhanced diagnostic functions including fast detection of overload and short-circuit to ground through power limitation indication and overtemperature indication. The current sensing and diagnostic feedback of the whole device can be disabled by pulling the CS_DIS pin high to allow sharing of the external sense resistor with other similar devices. DocID17114 Rev 6 1/34 www.st.com Contents VN5E016MH-E Contents 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.4 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.5 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 3.1 4 3.1.1 Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 22 3.1.2 Solution 2: a diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . 23 3.2 Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 3.3 MCU I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 3.4 Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3.5 Maximum demagnetization energy (VCC = 13.5 V) . . . . . . . . . . . . . . . . . 25 Package and PC board thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 4.1 5 GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 22 HPak thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 5.1 ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 5.2 HPak mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 5.3 HPak packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 6 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 2/34 DocID17114 Rev 5 VN5E016MH-E List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Pin functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 6 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Switching (VCC = 13 V, Tj = 25 °C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Logic inputs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Protection and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Current sense (8 V < VCC < 18 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Electrical transient requirements (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Electrical transient requirements (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Electrical transient requirements (part 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 HPak mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 DocID17114 Rev 5 3/34 3 List of figures VN5E016MH-E List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. Figure 34. Figure 35. Figure 36. Figure 37. Figure 38. 4/34 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Configuration diagram (top view) not in scale. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Output voltage drop limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Delay response time between rising edge of output current and rising edge of current sense (CS enabled) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 IOUT/ISENSE vs IOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Maximum current sense ratio drift vs load current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Normal operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Overload or short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Intermittent overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 TJ evolution in overload or short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Off-state output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Input clamp level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 On-state resistance vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 On-state resistance vs VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 ILIMH vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 CS_DIS high level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 CS_DIS clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 CS_DIS low level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Maximum turn-off current versus inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 PC board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . . 26 HPak thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Thermal fitting model of a single channel HSD in HPak . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 KPak package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 HPak tube shipment (no suffix). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 HPak tape and reel (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 DocID17114 Rev 5 VN5E016MH-E 1 Block diagram and pin description Block diagram and pin description Figure 1. Block diagram 9&& 6LJQDO&ODPS 8QGHUYROWDJH ,1 &RQWURO 'LDJQRVWLF 3RZHU &ODPS '5,9(5 921 /LPLWDWLRQ 2YHU WHPS &XUUHQW /LPLWDWLRQ &6B ',6 96(16( + &6 &XUUHQW 6HQVH 287 29(5/2$'3527(&7,21 $&7,9(32:(5/,0,7$7,21 /2*,& *1' ("1($'5 Table 1. Pin functions Name VCC OUTPUT GND INPUT CURRENT SENSE CS_DIS Function Battery connection Power output (1) Ground connection Voltage controlled input pin with hysteresis, CMOS compatible. Controls output switch state Analog current sense pin, delivers a current proportional to the load current Active high CMOS compatible pin, to disable the current sense pin 1. Pins 1 and 7 must be externally tied together. DocID17114 Rev 5 5/34 33 Block diagram and pin description VN5E016MH-E Figure 2. Configuration diagram (top view) not in scale        287*1',19FF&6&6B',6287  ("1($'5 Table 2. Suggested connections for unused and not connected pins 6/34 Connection / pin Current sense Output Input CS_DIS Floating Not allowed X X X To ground Through 1 kΩ resistor Through 22 kΩ resistor Through 10 kΩ resistor Through 10 kΩ resistor DocID17114 Rev 5 VN5E016MH-E 2 Electrical specifications Electrical specifications Figure 3. Current and voltage conventions ,6 9&& ,287 ,&6' 287387  &6B',6 9&6' ,6(16( ,,1 ,1387 9,1 9287 9&& &855(17 6(16( *1' 96(16( ,*1' *$3*&)7 2.1 Absolute maximum ratings Stressing the device above the rating listed in Table 3 may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Table 3. Absolute maximum ratings Symbol Parameter Value Unit VCC DC supply voltage 41 V -VCC Reverse DC supply voltage 0.3 V IGND DC reverse ground pin current 200 mA IOUT DC output current Internally limited A -IOUT Reverse DC output current 20 A DC input current -1 to 10 mA DC current sense disable input current -1 to 10 mA VCC-41 +VCC V V 350 mJ IIN ICSD VCSENSE Current sense maximum voltage (VCC > 0) EMAX Maximum switching energy (single pulse) (L = 1.55 mH; RL = 0 Ω; Vbat = 13.5 V; Tjstart = 150 °C; IOUT = IlimL(Typ.)) DocID17114 Rev 5 7/34 33 Electrical specifications VN5E016MH-E Table 3. Absolute maximum ratings (continued) Symbol Value Unit VESD Electrostatic discharge (human body model: R = 1.5 KΩ; C = 100 pF) – Input – Current sense – CS_DIS – Output – VCC 4000 2000 4000 5000 5000 V V V V V VESD Charge device model (CDM-AEC-Q100-011) 750 V Junction operating temperature -40 to 150 °C Storage temperature -55 to 150 °C Tj Tstg 2.2 Parameter Thermal data Table 4. Thermal data Symbol 8/34 Parameter Max. value Unit Rthj-case Thermal resistance junction-case 0.63 °C/W Rthj-amb 69.3 °C/W Thermal resistance junction-ambient DocID17114 Rev 5 VN5E016MH-E 2.3 Electrical specifications Electrical characteristics Values specified in this section are for 8 V < VCC < 28 V, -40 °C < Tj < 150 °C, unless otherwise specified. Table 5. Power section Symbol Parameter Test conditions Min. Typ. Max. Unit 4.5 13 28 V 4.5 V VCC Operating supply voltage VUSD Undervoltage shutdown 3.5 VUSDhyst Undervoltage shutdown hysteresis 0.5 RON VF Vclamp IS IL(off1) V IOUT = 5 A; Tj = 25 °C 16 mΩ IOUT = 5 A; Tj = 150 °C 32 mΩ IOUT = 5 A; VCC = 5 V; Tj = 25 °C 20 mΩ Output - VCC diode voltage -IOUT = 5 A; Tj = 150 °C 0.7 V Clamp voltage ICC = 20 mA; IOUT = 0 A 46 52 V Off-state; VCC = 13 V; Tj = 25 °C; VIN = VOUT = VSENSE = 0 V 2 5 µA On-state; VCC = 13 V; VIN = 5 V; IOUT = 0 A 1.5 3 mA 0.01 3 µA 5 µA On-state resistance Supply current Off-state output current 41 VIN = VOUT = 0 V; VCC = 13 V; Tj = 25 °C 0 VIN = VOUT = 0 V; VCC = 13 V; Tj = 125 °C 0 Table 6. Switching (VCC = 13 V, Tj = 25 °C) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time RL = 2.6 Ω (see Figure 5) — 15 — µs td(off) Turn-off delay time RL = 2.6 Ω (see Figure 5) — 45 — µs (dVOUT/dt)on Turn-on voltage slope RL = 2.6 Ω — 0.2 — V/µs (dVOUT/dt)off Turn-off voltage slope RL = 2.6 Ω — 0.2 — V/µs WON Switching energy RL = 2.6 Ω (see Figure 5) losses at turn-on (twon) — 1.4 — mJ WOFF Switching energy RL = 2.6 Ω (see Figure 5) losses at turn-off (twon) — 0.8 — mJ DocID17114 Rev 5 9/34 33 Electrical specifications VN5E016MH-E Table 7. Logic inputs Symbol Parameter Test conditions VIL Input low level voltage IIL Low level input current VIH Input high level voltage IIH High level input current VI(hyst) Input hysteresis voltage VICL Min. VIN = 0.9 V Typ. ICSDL Low level CS_DIS current VCSDH CS_DIS high level voltage ICSDH High level CS_DIS current VCSD(hy CS_DIS hysteresis voltage V µA 2.1 V 0.25 7 -0.7 V V 0.9 VCSD = 0.9 V µA V 5.5 IIN = -1 mA CS_DIS low level voltage 0.9 10 IIN = 1 mA VCSDL Unit 1 VIN = 2.1 V Input clamp voltage Max. V 1 µA 2.1 V VCSD = 2.1 V 10 0.25 µA V st) VCSCL ICSD = 1 mA CS_DIS clamp voltage 5.5 ICSD = -1 mA 7 -0.7 V V Table 8. Protection and diagnostics (1) Symbol Parameter Test conditions VCC = 13 V IlimH Short circuit current IlimL Short circuit current during thermal cycling TTSD Shutdown temperature Reset temperature TRS Thermal reset of status VDEMAG VON Typ. Max. Unit 54 73 108 A 108 A 5 V < VCC < 28 V TR THYST Min. VCC = 13 V; TR < Tj < TTSD 18 150 175 TRS + 1 TRS + 5 A 200 135 Thermal hysteresis (TTSD - TR) IOUT = 2 A; VIN = 0; L = 6 mH Output voltage drop limitation IOUT = 0.5 A; Tj = -40 °C to 150 °C VCC -41 VCC -46 VCC -52 25 1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles. 10/34 DocID17114 Rev 5 °C °C 7 Turn-off output voltage clamp °C °C V mV VN5E016MH-E Electrical specifications Table 9. Current sense (8 V < VCC < 18 V) Symbol Parameter Test conditions K0 IOUT/ISENSE IOUT = 0.25 A; VSENSE = 0.5 V; Tj = -40 °C to 150 °C K1 IOUT/ISENSE IOUT = 5 A; VSENSE = 0.5 V; Tj = -40 °C to 150 °C Tj = 25 °C to 150 °C dK1/K1(1) K2 dK2/K2(1) K3 dK3/K3(1) ISENSE0 = 5 A; VSENSE = 0.5 V; I Current sense ratio drift OUT VCSD = 0 V; Tj = -40 °C to 150 °C IOUT = 10 A; VSENSE = 4 V; Tj = -40 °C to 150 °C Tj = 25 °C to 150 °C IOUT/ISENSE =10 A; VSENSE = 4 V; I Current sense ratio drift OUT VCSD = 0 V; Tj = -40 °C to 150 °C IOUT = 25 A; VSENSE = 4 V; Tj = -40 °C to 150 °C Tj = 25 °C to 150 °C IOUT/ISENSE = 25 A; VSENSE = 4 V; I Current sense ratio drift OUT VCSD = 0 V; Tj= -40 °C to 150 °C Analog sense leakage current Min. Typ. 2836 6200 10444 4306 5200 4358 5200 7004 6106 - 11 + 11 4608 5040 4501 5040 5926 5502 -8 +8 4612 4930 4566 4930 % % 5367 5168 -4 +4 % IOUT = 0 A; VSENSE = 0 V; VCSD = 5 V; VIN = 0 V; Tj = -40 °C to 150 °C 0 1 µA VCSD = 0 V; VIN = 5 V; Tj = -40 °C to 150 °C 0 2 µA 1 µA 70 mA IOUT = 2 A; VSENSE = 0 V; VCSD = 5 V; VIN = 5 V; Tj = -40 °C to 150 °C IOL Openload ON-state current detection threshold VIN = 5 V; ISENSE = 5 µA 5 VSENSE Max analog sense output voltage IOUT =18 A; RSENSE = 3.9 KΩ 5 Analog sense output VSENSEH(2) voltage in fault condition Max. Unit V VCC = 13V; RSENSE = 3.9 KΩ 8 V mA ISENSEH(2) Analog sense output current in fault condition VCC = 13 V; VSENSE = 5 V 9 tDSENSE1H Delay response time from falling edge of CS_DIS pin VSENSE < 4 V; 1.5 A < IOUT < 25 A; ISENSE = 90 % of ISENSE max (see Figure 4) 50 100 µs tDSENSE1L Delay response time from rising edge of CS_DIS pin VSENSE < 4 V; 1.5 A < IOUT < 25 A; ISENSE = 10 % of ISENSE max (see Figure 4) 5 20 µs DocID17114 Rev 5 11/34 33 Electrical specifications VN5E016MH-E Table 9. Current sense (8 V < VCC < 18 V) (continued) Symbol tDSENSE2H Parameter Test conditions Delay response time from rising edge of INPUT pin Delay response time between rising edge of ΔtDSENSE2H output current and rising edge of current sense tDSENSE2L Delay response time from falling edge of INPUT pin Min. VSENSE < 4 V; 1.5 A < IOUT < 25 A; ISENSE = 90 % of ISENSE max (see Figure 4) Typ. Max. Unit 270 600 µs 280 µs 250 µs VSENSE < 4V; ISENSE = 90 % of ISENSEMAX; IOUT = 90 % of IOUTMAX; IOUTMAX = 3 A (see Figure 7) VSENSE < 4 V; 1.5 A < IOUT < 25 A; ISENSE = 10 % of ISENSE max (see Figure 4) 100 1. Parameter guaranteed by design, it is not tested. 2. Fault condition includes: power limitation and overtemperature. Figure 4. Current sense delay characteristics ,1387 &6B',6 /2$'&855(17 6(16(&855(17 W'6(16(+ W'6(16(/ W'6(16(+ W'6(16(/ ("1($'5 Figure 5. Switching characteristics 6 287 W:RQ W:RII   G9287 GW RII G9287 GW RQ WU  WI W ,1387 WG RQ WG RII W ("1($'5 12/34 DocID17114 Rev 5 VN5E016MH-E Electrical specifications Figure 6. Output voltage drop limitation 9FF9RXW 7M ž& 7M ž& 7M ž& 9RQ 9RQ5RQ 7 ,RXW ("1($'5 Figure 7. Delay response time between rising edge of output current and rising edge of current sense (CS enabled) 6 ,1 'W'6(16(+ W ,287 ,2870$; , 2870$; W ,6(16( ,6(16(0$; , 6(16(0$; W ("1($'5 DocID17114 Rev 5 13/34 33 Electrical specifications VN5E016MH-E Figure 8. IOUT/ISENSE vs IOUT Figure 9. Maximum current sense ratio drift vs load current E,,                *065 " ("1($'5 1. Parameter guaranteed by design; it is not tested. 14/34 DocID17114 Rev 5 VN5E016MH-E Electrical specifications Table 10. Truth table Input Output Sense (VCSD = 0 V)(1) Normal operation L H L H 0 Nominal Overtemperature L H L L 0 VSENSEH Undervoltage L H L L 0 0 H X (no power limitation) Cycling (power limitation) Nominal Conditions Overload H VSENSEH Short circuit to GND (power limitation) L H L L 0 VSENSEH Negative output voltage clamp L L 0 1. If the VCSD is high, the SENSE output is at a high impedance, its potential depends on leakage currents and external circuit. DocID17114 Rev 5 15/34 33 Electrical specifications VN5E016MH-E Table 11. Electrical transient requirements (part 1) ISO 7637-2: 2004(E) Test levels Number of pulses or test times Burst cycle / pulse repetition time Delays and impedance Test pulse III IV 1 -75 V -100 V 5000 pulses 0.5 s 5s 2 ms, 10 Ω 2a +37 V +50 V 5000 pulses 0.2 s 5s 50 µs, 2 Ω 3a -100 V -150 V 1h 90 ms 100 ms 0.1 µs, 50 Ω 3b +75 V +100 V 1h 90 ms 100 ms 0.1µs, 50 Ω 4 -6 V -7 V 1 pulse 100 ms, 0.01Ω 5b(1) +65 V +87 V 1 pulse 400 ms, 2 Ω 1. Valid in case of external load dump clamp: 40 V maximum referred to ground. Table 12. Electrical transient requirements (part 2) Test level results(1) ISO 7637-2: 2004(E) Test pulse III IV 1 C C 2a C C 3a C C 3b C C 4 C C 5b(2) C C 1. The above test levels must be considered referred to VCC = 13.5 V except for pulse 5b 2. Valid in case of external load dump clamp: 40 V maximum referred to ground. Table 13. Electrical transient requirements (part 3) 16/34 Class Contents C All functions of the device are performed as designed after exposure to disturbance. E One or more functions of the device are not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device. DocID17114 Rev 5 VN5E016MH-E 2.4 Electrical specifications Waveforms Figure 10. Normal operation Normal operation INPUT Nominal load Nominal load IOUT VSENSE VCS_DIS Figure 11. Overload or short to GND Overload or Short to GND INPUT ILimH > Power Limitation Thermal cycling ILimL > IOUT VSENSE VCS_DIS DocID17114 Rev 5 17/34 33 Electrical specifications VN5E016MH-E Figure 12. Intermittent overload Intermittent Overload INPUT Overload ILimH > ILimL > Nominal load IOUT VSENSEH > VSENSE VCS_DIS Figure 13. TJ evolution in overload or short to GND TJ evolution in Overload or Short to GND INPUT Self-limitation of fast thermal transients TTSD THYST TR TJ_START TJ ILimH > Power Limitation < ILimL IOUT 18/34 DocID17114 Rev 5 VN5E016MH-E 2.5 Electrical specifications Electrical characteristics curves Figure 14. Off-state output current Figure 15. High level input current ,ORII>Q$@ ,LK>X$@      9LQ 9                              7F>ƒ&@       7F>ƒ&@ ("1($'5 ("1($'5 Figure 16. Input clamp level Figure 17. Input low level 9LFO>9@ 9LO>9@     ,LQ P$                                       7F>ƒ&@ 7F>ƒ&@ ("1($'5 ("1($'5 Figure 18. Input high level Figure 19. Input hysteresis voltage 9LK\VW>9@ 9LK>9@                                         7F>ƒ&@ 7F>ƒ&@ ("1($'5 DocID17114 Rev 5 ("1($'5 19/34 33 Electrical specifications VN5E016MH-E Figure 20. On-state resistance vs Tcase 5RQ>P2KP@ Figure 21. On-state resistance vs VCC 5RQ>P2KP@     7F ž& 7F ž&   ,RXW $ 9FF 9    7F ž&   7F ž&                         9FF>9@ 7F>ƒ&@ ("1($'5 ("1($'5 Figure 22. Undervoltage shutdown Figure 23. Turn-on voltage slope 9XVG>9@ G9RXWGW 2Q>9PV@       9FF 9 5O ȍ                             7F>ƒ&@       7F>ƒ&@ ("1($'5 ("1($'5 Figure 24. ILIMH vs Tcase Figure 25. Turn-off voltage slope G9RXWGW 2II>9PV@ ,OLPK>$@   9FF 9   9FF 9 5O ȍ                          7F>ƒ&@         7F>ƒ&@ ("1($'5 20/34  DocID17114 Rev 5 ("1($'5 VN5E016MH-E Electrical specifications Figure 26. CS_DIS high level voltage Figure 27. CS_DIS clamp voltage 9FVGK>9@ 9FVGFO>9@     ,LQ P$                                     7F>ƒ&@ 7F>ƒ&@ ("1($'5 ("1($'5 Figure 28. CS_DIS low level voltage 9FVGO>9@                    7F>ƒ&@ ("1($'5 DocID17114 Rev 5 21/34 33 Application information 3 VN5E016MH-E Application information Figure 29. Application schematic 9 6 && 5SURW &6B',6 'OG 5SURW P& ,,1387 287387 5SURW &855( 176(16( 56(16( &H[W *1' 9*1' 5*1' '*1' ("1($'5 3.1 GND protection network against reverse battery 3.1.1 Solution 1: resistor in the ground line (RGND only) This can be used with any type of load. The following is an indication on how to set the dimension of RGND resistor. 1) RGND ≤ 600 mV / (IS(on)max). 2) RGND ≥ (−VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device datasheet. Power dissipation in RGND (when VCC < 0: during reverse battery situations) is: Equation 1 PD = (-VCC)2/RGND This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not shared by the device ground then the RGND produces a shift (IS(on)max * RGND) in the input thresholds and the status output values. This shift varies depending on how many devices are ON in the case of several high side drivers sharing the same RGND. 22/34 DocID17114 Rev 5 VN5E016MH-E Application information If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then ST suggests to utilize Solution 2 (see below). 3.1.2 Solution 2: a diode (DGND) in the ground line A resistor (RGND = 1 kΩ) should be inserted in parallel to DGND if the device drives an inductive load. This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network produces a shift (≈600 mV) in the input threshold and in the status output values if the microprocessor ground is not common to the device ground. This shift not varies if more than one HSD shares the same diode/resistor network. 3.2 Load dump protection Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the VCC max DC rating. The same applies if the device is subject to transients on the VCC line that are greater than the ones shown in the ISO T/R 7637/1 table. 3.3 MCU I/Os protection If a ground protection network is used and negative transients are present on the VCC line, the control pins are pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent the MCU I/O pins from latching-up. The value of these resistors is a compromise between the leakage current of MCU and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of MCU I/Os. Equation 2 -VCCpeak/Ilatchup ≤ Rprot ≤ (VOHμC-VIH-VGND) / IIHmax Calculation example: For VCCpeak= - 100 V and Ilatchup ≥ 20 mA; VOHμC ≥ 4.5 V 5 kΩ ≤ Rprot ≤ 65 kΩ. Recommended values: Rprot =10 kΩ, CEXT=10 nF. DocID17114 Rev 5 23/34 33 Application information 3.4 VN5E016MH-E Current sense and diagnostic The current sense pin performs a double function (see Figure 30: Current sense and diagnostic): • Current mirror of the load current in normal operation, delivering a current proportional to the load according to a known ratio KX. The current ISENSE can be easily converted into a voltage VSENSE by means of an external resistor RSENSE. Linearity between IOUT and VSENSE is ensured up to 5V minimum (see parameter VSENSE in Table 9: Current sense (8 V < VCC < 18 V)). The current sense accuracy depends on the output current (refer to current sense electrical characteristics Table 9: Current sense (8 V < VCC < 18 V)). • Diagnostic flag in fault conditions, delivering a fixed voltage VSENSEH up to a maximum current ISENSEH in case of the following fault conditions (refer to Table 10): – Power limitation activation – Overtemperature A logic level high on CS_DIS pin sets at the same time all the current sense pins of the device in a high impedance state, thus disabling the current monitoring and diagnostic detection. This feature allows multiplexing of the microcontroller analog inputs by sharing of sense resistance and ADC line among different devices. Figure 30. Current sense and diagnostic 9%$7 9&& 0DLQ026Q 9 2YHUWHPSHUDWXUH ,287.; ,6(16(+ 3ZUB/LP 287Q 96(16(+ &6B',6 &855(17 6(16(Q *1' /RDG 53527 7RX&$'& 56(16( 96(16( ("1($'5 24/34 DocID17114 Rev 5 VN5E016MH-E Maximum demagnetization energy (VCC = 13.5 V) Figure 31. Maximum turn-off current versus inductance 100 A B C 10 I (A) 3.5 Application information 1 0,1 1 L (mH) 10 100 A: Tjstart = 150°C single pulse B: Tjstart = 100°C repetitive pulse C: Tjstart = 125°C repetitive pulse VIN, IL Demagnetization Demagnetization Demagnetization t 1. Values are generated with RL = 0 Ω. In case of repetitive pulses, Tjstart (at the beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves A and B. DocID17114 Rev 5 25/34 33 Package and PC board thermal data VN5E016MH-E 4 Package and PC board thermal data 4.1 HPak thermal data Figure 32. PC board 1. Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm, PCB thickness = 1.8 mm, Cu thickness = 70 µm, Copper areas: from minimum pad lay-out to 8 cm2). Figure 33. Rthj-amb vs PCB copper area in open box free air condition RTHjamb 75 70 65 60 55 RTHjamb 50 45 40 35 30 0 26/34 2 4 DocID17114 Rev 5 6 8 10 VN5E016MH-E Package and PC board thermal data Figure 34. HPak thermal impedance junction ambient single pulse Equation 3: pulse calculation formula: Z THδ = R TH ⋅ δ + Z THtp ( 1 – δ ) where δ = tp ⁄ T Figure 35. Thermal fitting model of a single channel HSD in HPak 1. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded protections (power limitation or thermal cycling during thermal shutdown) are not triggered. DocID17114 Rev 5 27/34 33 Package and PC board thermal data VN5E016MH-E Table 14. Thermal parameter 2 28/34 Area/island (cm ) Footprint 4 8 R1 (°C/W) 0.1 - - R2 (°C/W) 0.2 - - R3 (°C/W) 2 - - R4 (°C/W) 8 - - R5 (°C/W) 28 22 12 R6 (°C/W) 31 25 16 C1 (W.s/°C) 0.0001 - - C2 (W.s/°C) 0.002 - - C3 (W.s/°C) 0.05 - - C4 (W.s/°C) 0.4 - - C5 (W.s/°C) 0.8 1.4 3 C6 (W.s/°C) 3 6 9 DocID17114 Rev 5 VN5E016MH-E Package and packing information 5 Package and packing information 5.1 ECOPACK® packages In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 5.2 HPak mechanical data Figure 36. KPak package dimension DocID17114 Rev 5 29/34 33 Package and packing information VN5E016MH-E Table 15. HPak mechanical data Data book mm Ref. dim Nom. Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.45 0.60 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 6.40 6.60 e1 1.60 1.80 e2 3.30 3.50 e3 5.00 5.20 H 9.35 10.10 L 1 D1 5.10 E E1 5.20 e 0.85 (L1) 2.80 L2 0.80 L4 R 1.00 0° 8° 0.20 V2 30/34 0.60 DocID17114 Rev 5 VN5E016MH-E 5.3 Package and packing information HPak packing information The devices can be packed in tube or tape and reel shipments (see Table 16: Device summary). Figure 37. HPak tube shipment (no suffix) A Base q.ty Bulk q.ty Tube length (± 0.5) A B C (± 0.1) C 75 3000 532 6 21.3 0.6 All dimensions are in mm. B Figure 38. HPak tape and reel (suffix “TR”) REEL DIMENSIONS All dimensions are in mm. Base q.ty Bulk q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 16.4 60 22.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape hole spacing Component spacing Hole diameter Hole diameter Hole position Compartment depth Hole spacing W P0 (± 0.1) P D (+ 0.1/-0) D1 (min) F (± 0.05) K (max) P1 (± 0.1) All dimensions are in mm. 16 4 8 1.5 1.5 7.5 2.75 2 End Start Top cover tape No components Components No components 500mm min Empty components pockets saled with cover tape. 500mm min User direction of feed DocID17114 Rev 5 31/34 33 Order codes 6 VN5E016MH-E Order codes Table 16. Device summary Order codes Package 7 pins H-pack 32/34 Tube Tape and reel Root part number 1 VN5E016MHTR-E DocID17114 Rev 5 VN5E016MH-E 7 Revision history Revision history Table 17. Document revision history Date Revision Changes 29-Jun-2010 1 Initial release. 30-Jun-2010 2 Changed status from target specification to preliminary data. 29-Jul-2010 3 Table 9: Current sense (8 V < VCC < 18 V): – Updated K1 maximun value for Tj = 25 °C...150 °C 04-Aug-2010 4 Table 9: Current sense (8 V < VCC < 18 V): – Updated K1, K2 and K3 typical values for Tj = -40 °C...150 °C – Updated dK1/K1 test conditions Updated Figure 8: IOUT/ISENSE vs IOUT. 19-Feb-2014 5 Changed document status from “Preliminary data” to “Production data” 07-May-2014 6 Updated Figure 2: Configuration diagram (top view) not in scale DocID17114 Rev 5 33/34 33 VN5E016MH-E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. 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WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2014 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 34/34 DocID17114 Rev 5
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VN5E016MHTR-E
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