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VN800PT13TR

VN800PT13TR

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO252

  • 描述:

    IC PWR DRIVER N-CHANNEL 1:1 PPAK

  • 详情介绍
  • 数据手册
  • 价格&库存
VN800PT13TR 数据手册
® VN800S / VN800PT HIGH SIDE DRIVER TYPE VN800S VN800PT s s RDS(on) 135 mΩ IOUT 0.7 A VCC 36 V CMOS COMPATIBLE INPUT THERMAL SHUTDOWN s CURRENT LIMITATION s SHORTED LOAD PROTECTION s UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN s PROTECTION AGAINST LOSS OF GROUND s VERY LOW STAND-BY CURRENT s SO-8 PPAK ORDER CODES PACKAGE TUBE T&R REVERSE BATTERY PROTECTION (*) SO-8 PPAK VN800S VN800PT VN800S13TR VN800PT13TR DESCRIPTION The VN800S, VN800PT are monolithic devices made by using STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes. Active current limitation combined with thermal shutdown and BLOCK DIAGRAM automatic restart protect the device against overload. Device automatically turns off in case of ground pin disconnection. This device is especially suitable for industrial applications in norms conformity with IEC1131 (Programmable Controllers International Standard). VCC VCC CLAMP OVERVOLTAGE DETECTION UNDERVOLTAGE DETECTION GND Power CLAMP DRIVER INPUT LOGIC CURRENT LIMITER OUTPUT STATUS OVERTEMPERATURE DETECTION (*) See note at page 7 Rev. 1 1/22 July 2004 1 VN800S / VN800PT ABSOLUTE MAXIMUM RATING Symbol VCC - VCC - IGND IOUT - IOUT IIN VIN VSTAT Parameter DC Supply Voltage Reverse DC Supply Voltage DC Reverse Ground Pin Current DC Output Current Reverse DC Output Current DC Input Current Input Voltage Range DC Status Voltage Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF) - INPUT VESD - STATUS - OUTPUT Ptot EMAX EMAX Tj Tc Tstg Lmax - VCC Power Dissipation TC=25°C Maximum Switching Energy (L=77.5mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=1.5A) Maximum Switching Energy (L=125mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=1.5A) Junction Operating Temperature Case Operating Temperature Storage Temperature Max Inductive Load (VCC=30V; ILOAD=0.5A; Tamb=100°C; Rthcase>ambient≤25°C/W) 4.2 121 195 Internally Limited - 40 to 150 - 55 to 150 2 Value SO-8 PPAK 41 - 0.3 - 200 Internally Limited -6 +/- 10 -3/+VCC + VCC 4000 4000 5000 5000 41.7 Unit V V mA A A mA V V V V V V W mJ mJ °C °C °C H CONFIGURATION DIAGRAM (TOP VIEW) & SUGGESTED CONNECTIONS FOR UNUSED AND N.C. PINS VCC 5 VCC OUTPUT OUTPUT VCC 5 4 N.C. STATUS INPUT OUTPUT STATUS INPUT GND Connection / Pin Status Floating To Ground X N.C. X X Output X Input X Through 10KΩ resistor 4 3 2 1 8 1 GND SO-8 PPAK CURRENT AND VOLTAGE CONVENTIONS IS VF IIN INPUT ISTAT STATUS GND VIN VSTAT IGND VOUT OUTPUT IOUT VCC VCC 2/22 1 VN800S / VN800PT THERMAL DATA Symbol Rthj-case Rthj-lead Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-lead Thermal Resistance Junction-ambient Value SO-8 PPAK 3 78 (3) 45 (4) Unit °C/W °C/W °C/W °C/W Max Max Max Max 30 93 (1) 82 (2) (1) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35µ thick) connected to all V CC pins. (2) When mounted on FR4 printed circuit board with 2 cm2 of copper area (at least 35µ thick). (3) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35µ thick) connected to all V CC pins. (4) When mounted on FR4 printed circuit board with 6 cm2 of copper area (at least 35µ thick). ELECTRICAL CHARACTERISTICS (8V
VN800PT13TR
PDF文档中包含的物料型号为:STM32F103RCT6。

器件简介:STM32F103RCT6是一款基于ARM Cortex-M3内核的32位微控制器,适用于需要高性能和低功耗的嵌入式应用。

引脚分配:该芯片具有多种封装形式,以LQFP64封装为例,共有64个引脚,包括电源引脚、地引脚、I/O引脚等。

参数特性:主频72MHz,内置512KB Flash存储器和64KB SRAM,支持多种外设接口,如USB、CAN、I2C等。

功能详解:该芯片具备丰富的外设和功能,包括定时器、ADC、通信接口等,适用于多种控制应用。

应用信息:适用于工业控制、医疗设备、消费电子等多种领域。

封装信息:提供多种封装选项,如LQFP64、TQFP48等,以适应不同的应用需求和空间限制。
VN800PT13TR 价格&库存

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