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VNB14NV0413TR

VNB14NV0413TR

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO263

  • 描述:

    IC PWR DRIVER N-CHAN 1:1 D2PAK

  • 数据手册
  • 价格&库存
VNB14NV0413TR 数据手册
® VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNB14NV04 VND14NV04 VND14NV04-1 VNP14NV04 VNS14NV04 RDS(on) Ilim Vclamp 3 1 35 mΩ 12 A 40 V TO-252 (DPAK) SO-8 3 3 2 1 LINEAR CURRENT LIMITATION s THERMAL SHUT DOWN s SHORT CIRCUIT PROTECTION s INTEGRATED CLAMP s L OW CURRENT DRAWN FROM INPUT PIN s DIAGNOSTIC FEEDBACK THROUGH INPUT PIN s ESD PROTECTION s DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) s COMPATIBLE WITH STANDARD POWER MOSFET s 1 2 TO-220 TO-251 (IPAK) D2PAK 3 1 ORDER CODES PACKAGE TUBE T&R VNB14NV04 VNB14NV0413TR D2PAK TO-252 (DPAK) VND14NV04 VND14NV0413TR TO-251 (IPAK) VND14NV04-1 TO-220 SO-8 VNP14NV04 VNS14NV04 - DESCRIPTION The VNB14NV04, VND14NV04, VND14NV04-1, VNP14NV04, VNS14NV04, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 50KHz BLOCK DIAGRAM applications. Built in thermal shutdown, linear current limitation |and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. DRAIN 2 Overvoltage Clamp INPUT 1 Gate Control O ver Temperature Linear Current Limiter 3 SOURCE July 2003 1/29 1 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 ABSOLUTE MAXIMUM RATING Symbol VDS VIN IIN RIN MIN ID IR VESD1 VESD2 Ptot EMAX Tj Tc Tstg Parameter Drain-source Voltage (VIN=0V) Input Voltage Input Current Minimum Input Series Impedance Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5KΩ, C=100pF) Electrostatic Discharge on output pin only (R=330Ω, C=150pF) Total Dissipation at Tc=25°C Maximum Switching Energy (L=0.4mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=18A) Operating Junction Temperature Case Operating Temperature Storage Temperature SO-8 Value DPAK TO-220 IPAK Internally Clamped Internally Clamped +/-20 10 Internally Limited -15 4000 16500 4.6 74 93 Internally limited Internally limited -55 to 150 74 74 74 93 D2PAK Unit V V mA Ω A A V V W mJ °C °C °C CONNECTION DIAGRAM (TOP VIEW) SO-8 Package (*) SOURCE SOURCE SOURCE INPUT 1 8 DRAIN DRAIN D RAIN 4 5 DRAIN (*) For the pins configuration related to DPAK, D2 PAK, IPAK, TO-220 see outlines at page 1. CURRENT AND VOLTAGE CONVENTIONS ID VDS DRAIN IIN RIN INPUT SOURCE VIN 2/29 1 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 THERMAL DATA Symbol Rthj-case Rthj-lead Rthj-amb (*) When Parameter Thermal Resistance Junction-case MAX Thermal Resistance Junction-lead MAX Thermal Resistance Junction-ambient MAX SO-8 27 90 (*) DPAK 1.7 65 (*) Value TO-220 1.7 62 IPAK 1.7 102 D2PAK 1.7 52 (*) Unit °C/W °C/W °C/W mounted on a standard single-sided FR4 board with 0.5cm2 of Cu (at least 35 µm thick) connected to all DRAIN pins. Horizontal mounting and no artificial air flow. ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified) OFF Symbol VCLAMP VCLTH VINTH IISS VINCL IDSS Parameter Drain-source Clamp Voltage Drain-source Clamp Threshold Voltage Input Threshold Voltage Supply Current from Input Pin Input-Source Clamp Voltage Zero Input Voltage Drain Current (VIN=0V) Test Conditions VIN=0V; ID=7A VIN=0V; ID=2mA VDS=VIN; ID=1mA VDS=0V; VIN=5V IIN=1mA IIN=-1mA VDS=13V; VIN=0V; Tj=25°C VDS=25V; VIN=0V 6 -1.0 Min 40 36 0.5 100 6.8 2.5 150 8 -0.3 30 75 Typ 45 Max 55 Unit V V V µA V µA ON Symbol RDS(on) Parameter Static Drain-source On Resistance Test Conditions VIN=5V; ID=7A; Tj=25°C VIN=5V; ID=7A Min Typ Max 35 70 Unit mΩ 3/29 1 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified) DYNAMIC Symbol gfs (*) COSS Parameter Forward Transconductance Output Capacitance Test Conditions VDD=13V; ID=7A VDS=13V; f=1MHz; VIN=0V Min Typ 18 400 Max Unit S pF SWITCHING Symbol td(on) tr td(off) tf td(on) tr td(off) tf (di/dt)on Qi Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Current Slope Total Input Charge Test Conditions VDD=15V; ID=7A Vgen=5V; Rgen=RIN MIN=10Ω (see figure 1) VDD=15V; ID=7A Vgen=5V; Rgen=2.2KΩ (see figure 1) VDD=15V; ID=7A Vgen=5V; Rgen=RIN MIN=10Ω VDD=12V; ID =7A; VIN=5V; Igen=2.13mA (see figure 5) Min Typ 80 350 450 150 1.5 9.7 9 10.2 16 36.8 Max 250 1000 1350 500 4.5 30.0 25.0 30.0 Unit ns ns ns ns µs µs µs µs A/µs nC SOURCE DRAIN DIODE Symbol VSD (*) trr Qrr IRRM Parameter Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions ISD =7A; VIN=0V ISD=7A; di/dt=40A/µs Min Typ 0.8 300 0.8 5 Max Unit V ns µC A VDD=30V; L=200µH Reverse Recovery Current (see test circuit, figure 2) PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified) Symbol Ilim tdlim Tjsh Tjrs Igf Eas Parameter Drain Current Limit Step Response Current Limit Overtemperature Shutdown Overtemperature Reset Fault Sink Current Single Pulse Avalanche Energy Test Conditions VIN=5V; VDS=13V VIN=5V; VDS=13V Min 12 Typ 18 45 150 135 10 400 175 200 Max 24 Unit A µs °C °C mA mJ VIN=5V; VDS=13V; Tj=Tjsh starting Tj=25°C; VDD =24V VIN= 5V; Rgen=RIN MIN=10Ω; L=24mH (see figures 3 & 4) 15 20 (*) Pulsed: Pulse duration = 300µs, duty cycle 1.5% 4/29 2 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 PROTECTION FEATURES During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50KHz. The only difference from the user’s standpoint is that a small DC current IISS (typ. 100µA) flows into the INPUT pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current ID to Ilim whatever the INPUT pin voltages. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh. - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted when the chip temperature falls of about 15°C below shut-down temperature. - STATUS FEEDBACK: in the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current Igf, the INPUT pin will fall to 0V. This will not however affect the device operation: no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current IISS. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit. 5/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 Figure 1: Switching Time Test Circuit for Resistive Load VD Rgen Vgen ID 90% tr td(on) Vgen 10% td(off) tf t t Figure 2: Test Circuit for Diode Recovery Times A D I A FAST DIODE OMNIFET S 25 Ω B L=100uH B D Rgen VDD I OMNIFET S Vgen 8.5 Ω 6/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 Figure 3: Unclamped Inductive Load Test Circuits Figure 4: Unclamped Inductive Waveforms RGEN VIN PW Figure 5: Input Charge Test Circuit VIN GEN ND8003 7/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 Source-Drain Diode Forward Characteristics Vsd (mV) 1000 Static Drain Source On Resistance Rds(on) (mohms) 180 160 950 Vin=0V 900 Vin=2.5V 140 120 Tj=-40ºC 850 100 800 80 Tj=150ºC Tj=25ºC 750 60 700 40 20 0 2 4 6 8 10 12 14 16 18 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 650 Id (A) Id(A) Derating Curve Static Drain-Source On resistance Vs. Input Voltage Rds(on) (mohms) 80 70 Tj=150ºC 60 50 Id=12A Id=1A 40 Tj=25ºC 30 Tj=-40ºC Id=12A Id=1A Id=12A Id=1A 20 10 3 3.5 4 4.5 5 5.5 6 6.5 Vin(V) Static Drain-Source On resistance Vs. Input Voltage Rds(on) (mohms) 80 Transconductance Gfs (S) 24 22 70 20 Vds=13V Tj=-40ºC Tj=25ºC Id=7A 60 18 16 Tj=150ºC 50 Tj=150ºC 14 12 40 10 8 30 Tj=25ºC 6 4 Tj= - 40ºC 20 2 0 10 3 3.5 4 4.5 5 5.5 6 6.5 0 1 2 3 4 5 6 7 8 9 10 11 12 13 Vin(V) Id(A) 8/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 Static Drain-Source On Resistance Vs. Id Rds(on) (mohms) 70 Transfer Characteristics Idon (A) 18 16 Vds=13.5V Tj=25ºC 60 Vin=5V 50 Tj=150ºC 14 12 Tj=-40ºC 40 10 8 Tj=25ºC Tj=150ºC 30 6 4 20 Tj=-40ºC 10 2 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25 5.5 Id(A) Vin (V) Turn On Current Slope di/dt(A/us) 20 17.5 15 12.5 Turn On Current Slope di/dt(A/us) 6 5.5 Vin=5V Vdd=15V Id=7A 5 4.5 4 3.5 Vin=3.5V Vdd=15V Id=7A 10 7.5 5 2.5 0 0 250 500 750 1000 1250 1500 1750 2000 2250 3 2.5 2 1.5 1 0.5 0 0 250 500 750 1000 1250 1500 1750 2000 2250 Rg(ohm) Rg(ohm) Input Voltage Vs. Input Charge Vin (V) 8 7 6 5 4 Turn off drain source voltage slope dv/dt(V/us) 300 275 Vds=12V Id=7A 250 225 200 175 150 125 Vin=5V Vdd=15V Id=7A 3 2 1 0 0 5 10 15 20 25 30 35 40 45 100 75 50 25 0 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 Qg (nC) Rg(ohm) 9/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 Turn Off Drain-Source Voltage Slope dv/dt(v/us) 300 275 250 225 200 175 150 125 100 75 50 25 0 0 250 500 750 1000 1250 1500 1750 2000 2250 300 200 0 5 10 15 20 25 30 35 500 400 600 Capacitance Variations C(pF) 1000 900 Vin=3.5V Vdd=15V Id=7A 800 700 f=1MHz Vin=0V Rg(ohm) Vds(V) Switching Time Resistive Load t(us) 11 Switching Time Resistive Load t(ns) 1750 tf 10 9 8 7 6 5 750 4 3 2 1 0 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 500 1000 Vdd=15V Id=7A Vin=5V tr td(off) 1500 1250 Vdd=15V Id=7A Rg=10ohm td(off) tr td(on) 250 tf td(on) 3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25 0 Rg(ohm) Vin(V) Output Characteristics Id (A) 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 Normalized On Resistance Vs. Temperature Rds(on) (mOhm) 4 Vin=5V Vin=4V 3.5 3 Vin=5V Id=7A Vin=3V 2.5 2 1.5 1 0.5 Vin=2V 0 4.5 5 5.5 6 3.5 4 -50 -25 0 25 50 75 100 125 150 175 Vds (V) Tc (ºC) 10/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 Normalized Input Temperature Vinth (V) 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 -50 -25 0 25 50 75 100 125 150 175 Threshold Voltage Vs. Current Limit Vs. Junction Temperature Ilim (A) 40 35 Vds=Vin Id=1mA 30 25 20 15 10 5 0 -50 -25 Vin=5V Vds=13V 0 25 50 75 100 125 150 175 Tc (ºC) Tc (ºC) Step Response Current Limit Tdlim(us) 55 52.5 50 47.5 45 42.5 40 37.5 35 32.5 30 7.5 10 12.5 15 17.5 20 22.5 25 27.5 30 32.5 Vin=5V Rg=10ohm Vdd(V) 11/29 1 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 DPAK Maximum turn off current versus load inductance ILMAX (A) 100 A 10 B C 1 0.01 0.1 L(mH ) 1 10 A = Single Pulse at TJstart=150ºC B= Repetitive pulse at TJstart=100ºC C= Repetitive Pulse at TJstart=125ºC Conditions: VCC=13.5V Values are generated with RL=0Ω In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. VIN, IL Demagnetization Demagnetization Demagnetization t 12/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 D2PAK Maximum turn off current versus load inductance ILMAX (A) 100 A B 10 C 1 0.01 0.1 1 L(mH) 10 100 A = Single Pulse at TJstart=150ºC B= Repetitive pulse at TJstart=100ºC C= Repetitive Pulse at TJstart=125ºC Conditions: VCC=13.5V Values are generated with RL=0Ω In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. VIN, IL Demagnetization Demagnetization Demagnetization t 13/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 DPAK THERMAL DATA DPAK PC Board Layout condition of Rth and Zth measurements (PCB FR4 area= 60mm x 60mm, PCB thickness=2mm, Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8cm2). Rthj-amb Vs PCB copper area in open box free air condition RTH j_amb (ºC/W) 90 80 70 60 50 40 30 0 2 4 6 8 10 PCB CU heatsink area (cm^2) 14/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 SO-8 THERMAL DATA SO-8 PC Board Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm, Cu thickness=35µm, Copper areas: 0.14cm2, 0.6cm2, 1.6cm2). Rthj-amb Vs PCB copper area in open box free air condition RTHj_amb (ºC/W) SO-8 at 4 pins connected to TAB 110 105 100 95 90 85 80 75 70 0 0.5 1 1.5 2 2.5 PCB CU heatsink area (cm^2) 15/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 D2PAK THERMAL DATA D2PAK PC Board Layout condition of Rth and Zth measurements (PCB FR4 area= 60mm x 60mm, PCB thickness=2mm, Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8cm2). Rthj-amb Vs PCB copper area in open box free air condition RTHj_amb (°C/W) 55 Tj-Tamb=50°C 50 45 40 35 30 0 2 4 6 8 10 PCB Cu heatsink area (cm^2) 16/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 DPAK Thermal Impedance Junction Ambient Single Pulse ZT H (°C/W) 1000 100 Footprint 6 cm2 10 1 0.1 0.0001 0.001 0.01 0.1 1 T ime (s) 10 100 1000 Thermal fitting model of an OMNIFET II in DPAK Pulse calculation formula Z TH δ = R TH ⋅ δ + Z THtp ( 1 – δ ) where δ = tp ⁄ T Footprint 0.1 0.35 1.20 2 15 61 0.0006 0.0021 0.05 0.3 0.45 0.8 6 Thermal Parameter Area/island (cm2) R1 (°C/W) R2 (°C/W) R3 ( °C/W) R4 (°C/W) R5 (°C/W) R6 (°C/W) C1 (W.s/°C) C2 (W.s/°C) C3 (W.s/°C) C4 (W.s/°C) C5 (W.s/°C) C6 (W.s/°C) Tj C1 C2 C3 C4 C5 C6 R1 R2 R3 R4 R5 R6 Pd 24 T_amb 5 17/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 D2PAK Thermal Impedance Junction Ambient Single Pulse ZTH (°C/W) 1000 100 Footprint 6 cm2 10 1 0.1 0.0001 0.001 0.01 0.1 1 Time (s) 10 100 1000 Thermal fitting model of an OMNIFET II in D2PAK Pulse calculation formula Z TH δ = R TH ⋅ δ + Z THtp ( 1 – δ ) where δ = tp ⁄ T Footprint 0.1 0.35 0.3 4 9 37 0.0006 2.10E-03 8.00E-02 0.45 2 3 6 Thermal Parameter Area/island (cm2) R1 (°C/W) R2 (°C/W) R3 ( °C/W) R4 (°C/W) R5 (°C/W) R6 (°C/W) C1 (W.s/°C) C2 (W.s/°C) C3 (W.s/°C) C4 (W.s/°C) C5 (W.s/°C) C6 (W.s/°C) Tj C1 C2 C3 C4 C5 C6 R1 R2 R3 R4 R5 R6 Pd 22 T_amb 5 18/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 TO-251 (IPAK) MECHANICAL DATA mm. MIN. 2.2 0.9 0.7 0.64 5.2 0.3 0.95 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 TYP MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 DIM. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 H C A C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 19/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 D2PAK MECHANICAL DATA DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0º 4.88 15 1.27 1.4 2.4 0.4 8º 10 8.5 5.28 15.85 1.4 1.75 3.2 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 P011P6 20/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 TO-252 (DPAK) MECHANICAL DATA DIM. A A1 A2 B B2 C C2 D D1 E E1 e G H L2 L4 R V2 Package Weight 0° 0.60 0.2 8° Gr. 0.29 4.40 9.35 0.8 1.00 6.40 4.7 2.28 4.60 10.10 mm. MIN. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.1 6.60 TYP MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 P032P 21/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 TO-220 MECHANICAL DATA mm. DIM. MIN. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75  . # % inch MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.7 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 14.0 2.95 15.75 6.6 3.93 0.511 0.104 0.600 0.244 0.137 0.154 0.102 3.85 0.147 ' TYP TYP. MAX. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 13.0 2.65 15.25 6.2 3.5 2.6 0.551 0.116 0.620 0.260 0.151 & /  .  .  .  .  .  8  * KC & (  8  (  .  (  *  ) ) 22/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 SO-8 MECHANICAL DATA mm. DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M F 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 inch 23/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 D2PAK FOOTPRINT A TUBE SHIPMENT (no suffix) C 16.90 12.20 1.60 3.50 9.75 5.08 B Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) All dimensions are in mm. 50 500 532 6 21.3 0.6 All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix “13TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 24.4 60 30.4 All dimensions are in mm. TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 (± 0.1) P D (± 0.1/-0) D1 (min) F (± 0.05) K (max) P1 (± 0.1) 24 4 16 1.5 1.5 11.5 6.5 2 End All dimensions are in mm. Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components 24/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 DPAK FOOTPRINT A TUBE SHIPMENT (no suffix) 1 .6 6 .7 1 .8 3 .0 C 2 .3 6 .7 2 .3 B Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) All dimensions are in mm. 75 3000 532 6 21.3 0.6 TAPE AND REEL SHIPMENT (suffix “13TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 16.4 60 22.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 (± 0.1) P D (± 0.1/-0) D1 (min) F (± 0.05) K (max) P1 (± 0.1) 16 4 8 1.5 1.5 7.5 6.5 2 End All dimensions are in mm. Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components 25/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 SO-8 TUBE SHIPMENT (no suffix) B C A Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) All dimensions are in mm. 100 2000 532 3.2 6 0.6 TAPE AND REEL SHIPMENT (suffix “13TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 12.4 60 18.4 All dimensions are in mm. TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 (± 0.1) P D (± 0.1/-0) D1 (min) F (± 0.05) K (max) P1 (± 0.1) 12 4 8 1.5 1.5 5.5 4.5 2 End All dimensions are in mm. Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components 26/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 TO-220 TUBE SHIPMENT (no suffix) A B Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) All dimensions are in mm. 50 1000 532 5.5 31.4 0.75 C 27/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 IPAK TUBE SHIPMENT (no suffix) A C B Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) All dimensions are in mm. 75 3000 532 6 21.3 0.6 MECHANICAL POLARIZATION 28/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 29/29
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