VNB20N07-E

VNP20N07FI VNB20N07/VNV20N07 ® "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS(on) I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A ■ ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNP20N07FI, VNB20N07 and VNV20N07 are monolithic devices made using STMicroelectronics VlPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh ISOWATT220 3 1 2 10 3 1 D2PAK TO-263 1 PowerSO-10 enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. BLOCK DIAGRAM (∗) (∗) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB September 2013 1/13 VNP20N07FI-VNB20N07-VNV20N07 ABSOLUTE MAXIMUM RATING Symbol Parameter Value PowerSO-10 D2PAK V DS Drain-source Voltage (V in = 0) V in Unit ISOWATT220 Internally Clamped V Input Voltage 18 V ID Drain Current Internally Limited A IR Reverse DC Output Current -28 A 2000 V V esd Ptot Tj Tc T stg Electrostatic Discharge (C= 100 pF, R=1.5 KΩ) o Total Dissipation at T c = 25 C 83 Operating Junction Temperature Case Operating Temperature Storage Temperature 34 W Internally Limited o C Internally Limited o C -55 to 150 o C THERMAL DATA R thj-case Thermal Resistance Junction-case R thj-amb Thermal Resistance Junction-ambient ISOWATT220 PowerSO-10 D2PAK 3.75 62.5 1.5 50 1.5 62.5 Max Max o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions V CLAMP Drain-source Clamp Voltage I D = 200 mA V CLTH Drain-source Clamp Threshold Voltage I D = 2 mA V INCL Input-Source Reverse Clamp Voltage I in = -1 mA I DSS Zero Input Voltage Drain Current (V in = 0) V DS = 13 V V DS = 25 V II SS Supply Current from Input Pin V DS = 0 V V in = 0 V in = 0 Min. Typ. Max. Unit 60 70 80 V 55 V -1 -0.3 V 50 200 µA µA 250 500 µA Typ. Max. Unit 3 V 0.05 0.07 Ω Ω Max. Unit V in = 0 V in = 0 V in = 10 V ON (∗) Symbol Parameter Test Conditions Min. I D + Ii n = 1 mA 0.8 V IN(th) Input Threshold Voltage V DS = Vin R DS(on) Static Drain-source On Resistance V in = 10 V I D = 10 A V in = 5 V I D = 10 A DYNAMIC Symbol g fs (∗) C oss 2/13 Parameter Test Conditions Forward Transconductance V DS = 13 V I D = 10 A Output Capacitance V DS = 13 V f = 1 MHz V in = 0 Min. Typ. 13 17 500 S 800 pF VNP20N07FI-VNB20N07-VNV20N07 ELECTRICAL CHARACTERISTICS (continued) SWITCHING (∗∗) Symbol Typ. Max. Unit t d(on) tr t d(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V DD = 15 V V gen = 10 V (see figure 3) I d = 10 A R gen = 10 Ω 90 240 430 150 180 400 800 300 ns ns ns ns t d(on) tr t d(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V DD = 15 V V gen = 10 V (see figure 3) I d = 10 A R gen = 1000 Ω 800 1.5 6 3.5 1200 2.2 10 5.5 ns µs µs µs Turn-on Current Slope V DD = 15 V V in = 10 V Total Input Charge V DD = 12 V (di/dt) on Qi Parameter Test Conditions Min. I D = 10 A R gen = 10 Ω I D = 10 A V in = 10 V 60 A/µs 60 nC SOURCE DRAIN DIODE Symbol V SD (∗) t rr (∗∗) Q rr (∗∗) I RRM (∗∗) Parameter Test Conditions Forward On Voltage I SD = 10 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 10 A di/dt = 100 A/µs V DD = 30 V T j = 25 o C (see test circuit, figure 5) Min. Typ. V in = 0 Max. Unit 1.6 V 165 ns 0.55 µC 6.5 A PROTECTION Symbol Parameter Test Conditions Min. Typ. Max. Unit V DS = 13 V V DS = 13 V 14 14 20 20 28 28 A A 29 70 60 140 µs µs Drain Current Limit V in = 10 V V in = 5 V t dlim (∗∗) Step Response Current Limit V in = 10 V V in = 5 V T jsh (∗∗) Overtemperature Shutdown 150 o C T jrs (∗∗) Overtemperature Reset 135 o C I gf (∗∗) Fault Sink Current V in = 10 V V in = 5 V E as (∗∗) Single Pulse Avalanche Energy starting T j = 25 o C V DD = 20 V V in = 10 V R gen = 1 KΩ L = 10 mH I lim 50 20 0.95 mA mA J (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (∗∗) Parameters guaranteed by design/characterization 3/13 VNP20N07FI-VNB20N07-VNV20N07 PROTECTION FEATURES During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user’s standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 70V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh. 4/13 - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC. - STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 Ω. The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)). VNP20N07FI-VNB20N07-VNV20N07 Thermal Impedance For ISOWATT220 Thermal Impedance For D2PAK / PowerSO-10 Derating Curve Output Characteristics Transconductance Static Drain-Source On Resistance vs Input Voltage 5/13 VNP20N07FI-VNB20N07-VNV20N07 Static Drain-Source On Resistance Static Drain-Source On Resistance Input Charge vs Input Voltage Capacitance Variations Normalized Input Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 6/13 VNP20N07FI-VNB20N07-VNV20N07 Normalized On Resistance vs Temperature Turn-on Current Slope Turn-on Current Slope Turn-off Drain-Source Voltage Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load 7/13 VNP20N07FI-VNB20N07-VNV20N07 Switching Time Resistive Load Switching Time Resistive Load Current Limit vs Junction Temperature Step Response Current Limit Source Drain Diode Forward Characteristics 8/13 VNP20N07FI-VNB20N07-VNV20N07 Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Input Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 6: Waveforms 9/13 VNP20N07FI-VNB20N07-VNV20N07 ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 10/13 L4 P011G VNP20N07FI-VNB20N07-VNV20N07 TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.28 0.393 0.404 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 E A C2 L2 D L L3 B2 B A1 C G P011P6/C 11/13 VNP20N07FI-VNB20N07-VNV20N07 PowerSO-10 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 3.35 3.65 0.132 0.144 A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 D 9.40 9.60 0.370 0.378 D1 7.40 7.60 0.291 0.300 E 9.30 9.50 0.366 0.374 E1 7.20 7.40 0.283 0.291 E2 7.20 7.60 0.283 0.300 E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 e 1.27 0.240 0.050 F 1.25 1.35 0.049 0.053 H 13.80 14.40 0.543 0.567 1.80 0.047 h 0.50 L 0.002 1.20 q 1.70 α 0.071 0.067 0o 8o B 0.10 A B 10 = E4 = = = E1 = E3 = E2 = E = = = H 6 = = 1 5 B e 0.25 SEATING PLANE DETAIL "A" A C M Q D h = D1 = = = SEATING PLANE A F A1 A1 L DETAIL "A" α 0068039-C 12/13 VNP20N07FI/VNB20N07/VNV20N07 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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