VNB28N04-E

VNP28N04FI VNB28N04/VNV28N04 ® ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS( on) I lim VNP28N04FI VNB28N04 VNV28N04 42 V 42 V 42 V 0.035 Ω 0.035 Ω 0.035 Ω 28 A 28 A 28 A ■ ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION d VNV28N04 VNV28 The VNP28N04FI, VNB28N04 and are monolithic devices made using er M0 Technology, Te STMicroelectronics VIPower nt of standard st intended for replacement power o 50 KHz applications. ap MOSFETS in DC to Built-in wn, linear current limitation and thermal shut-down, clam protect the chip in harsh overvoltage clamp ISOWATT220 3 1 2 10 3 1 D2PAK TO-263 1 PowerSO-10 enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. BLOCK K DIAGRA DIAGRAM (∗) O (∗)PowerSO-10PinConfiguration:INPUT=6,7,8,9,10;SOURCE=1,2,4,5;DRAIN=TAB 3EPTEMBERDocID Rev  1/13 VNP28N04FI-VNB28N04-VNV28N04 ABSOLUTE MAXIMUM RATING Symbol Parameter Value Po werSO-10 D2PAK Unit ISOW AT T220 V DS Drain-source Voltage (V in = 0) Internally Clamped V V in Input Voltage 18 V ID Drain Current Internally Limited A IR Reverse DC O utput Current -28 A V esd Electrostatic Discharge (C= 100 pF , R=1.5 KΩ) P to t Total Dissipation at T c = 25 C 2000 o V 83 34 W Tj Operating Junction T emperature Internally Limited o C Tc Case Operating T emperature Internally Limited o C -55 to 150 o C T st g Storage Temperature THERMAL DATA ISOW ATT 220 20 Pow e erSO -10 R t hj-ca se Thermal Resistance Junction-case R t hj-a mb Thermal Resistance Junction-ambient Max Max 3.75 75 62.5 1.5 50 D2PAK 1.5 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (-40 < Tj < 125 oC u unless otherwise specified) OFF Symb ol Parameter Test T Cond ition s V CLAMP Drain-source Clamp Voltage I D = 200 mA V CL TH Drain-source Clamp mp Threshold Voltage I D = 2 mA V I NCL Input-Source Source Reverse Re Clamp mp Voltage Vol I in = -1 mA I DSS Zero In Input Voltage Drain Current (V in = 0) V DS = 13 V V DS = 25 V V in = 0 V in = 0 I I SS Supply Current from Input Pin V DS = 0 V Vin = 10 V V in = 0 V in = 0 Min. Typ . Max. Un it 34 42 51 V 31 V -1.1 -0.1 V 100 200 μA μA 250 600 μA Typ . Max. Un it 3 V A A 0.035 0.05 Ω Ω A A 0.07 0.1 Ω Ω O ON (∗) Symb ol Parameter Test Cond ition s Min. ID + Ii n = 1 mA 0.8 V IN(th) Input Threshold Voltage V DS = Vin R DS( on) Static Drain-source On Resistance V i n = 10 V I D = 14 ID = 14 Vi n = 5 V -40 < T j < 25 oC V i n = 10 V I D = 14 Vi n = 5 V ID = 14 o T j = 125 C 2/13 VNP28N04FI-VNB28N04-VNV28N04 ELECTRICAL CHARACTERISTICS (continued) DYNAMIC Symb ol g fs (∗) C oss Parameter Test Cond ition s Forward Transconductance V DS = 13 V I D = 14 A Output Capacitance V DS = 13 V f = 1 MHz Min. Typ . 9 18 Vin = 0 Max. Un it S 700 1100 pF Typ . Max. Un it SWITCHING (**) Symb ol Parameter Test Cond ition s Min. t d(on) tr t d(of f) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall T ime V DD = 15 V V gen = 10 V (see figure 3) Id = 14 A R gen = 10 Ω 100 330 400 55 155 300 800 00 900 4 400 nss ns ns ns t d(on) tr t d(of f) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall T ime V DD = 15 V V gen = 10 V (see figure 3) Id = 14 A R gen = 1000 Ω 450 1 1.7 7.5 3.4 900 4 25 10 ns μs μs μs Turn-on Current Slope V DD = 15 V V i n = 10 V Total Input Charge V DD = 12 V (di/dt) on Qi ID = 14 A R gen = 10 Ω ID = 10 A V i n = 10 V 35 A/μs 60 nC SOURCE DRAIN DIODE Symb ol Parameter Test T Cond ition s V SD (∗) Forward O n Voltage I SD = 14 A t r r (∗∗) Reverse Recoveryy Time Reverse Recovery e Charge erse Recovery R Reverse Current I SSD = 14 A di/dt = 100 A/μs o Tj = 25 C V DD = 30 V (see test circuit, figure 5) Q r r (∗∗) I RRM (∗∗) Min. Typ . V in = 0 Max. 2 Un it V 180 ns 0.45 μC 7 A PROTECTION TECTIO O Symb ol Sym I lim Parameter Test Cond ition s Min. Typ . Max. Un it VDS = 13 V V DS = 13 V 19 19 28 28 41 41 A A 25 70 40 120 μs μs Drain Current Limit V i n = 10 V Vi n = 5 V t dl im (∗∗) Step Response Current Limit V i n = 10 V Vi n = 5 V T jsh (∗∗) Overtemperature Shutdown 150 o C T j rs (∗∗) Overtemperature Reset 135 o C I gf (∗∗) Fault Sink Current V i n = 10 V Vi n = 5 V E as (∗∗) Single Pulse Avalanche Energy starting T j = 25 C V DD = 20 V V i n = 10 V R gen = 1 KΩ L = 10 mH VDS = 13 V V DS = 13 V o 50 20 2.5 mA mA J (∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % (∗∗) Parameters guaranteed by design/characterization 3/13 VNP28N04FI-VNB28N04-VNV28N04 PROTECTION FEATURES During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user’s standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts reac long enough, junction temperature mayy reach the overtemperature threshold Tjshh. O 4/13 - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC. - STATUS FEEDBACK: In the case ase of an on, a Status Sta overtemperature fault condition, rough the Input Inp pin. Feedback is provided through ircuit disconnects di The internal protection circuit the conn input from the gate and connects it instead to ground via an equivalent resistance of 100 Ω. an be detected by monitoring the The failure can In voltage at the Input pin, which will be close to nd potential. potent ground ditional features of this device are ESD Additional protectio according to the Human Body model protection and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)). VNP28N04FI-VNB28N04-VNV28N04 Thermal Impedance For ISOWATT220 Thermal Impedance For D2PAK / PowerSO-10 Derating Curve Output Characteristics acteristics Transco Transconductance Static Drain-Source On Resistance vs Input Voltage O 5/13 VNP28N04FI-VNB28N04-VNV28N04 Static Drain-Source On Resistance Static Drain-Source On Resistance Input Charge vs Input Voltage Variation Capacitance Variations Normaliz Normalized Input Threshold Voltage vs Tem Temperature Normalized On Resistance vs Temperature O 6/13 VNP28N04FI-VNB28N04-VNV28N04 Normalized On Resistance vs Temperature Turn-on Current Slope Turn-on Current Slope Turn-off Drain-Source n-Source Voltage Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load O 7/13 VNP28N04FI-VNB28N04-VNV28N04 Switching Time Resistive Load Switching Time Resistive Load Current Limit vs Junction Temperature Step Response nse Current Curre Limit Source D Drain Diode Forward Characteristics O 8/13 VNP28N04FI-VNB28N04-VNV28N04 Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load arge Test Circuit Fig. 4: Input Charge Te Circuit For Inductive Load Switching Fig. 5: Test D And Diode Recovery Times Fig. 6: Waveforms 9/13 VNP28N04FI-VNB28N04-VNV28N04 ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 39 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.06 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 L3 0.630 28.6 30.6 1.126 1.204 9.8 6 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 93 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L4 L3 L6 O F F1 L7 F2 H G G1 ¯ 1 2 3 L2 10/13 L4 P011G VNP28N04FI-VNB28N04-VNV28N04 TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.02 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.28 393 0.393 0.404 G 4.88 5.28 0.192 0.208 L 15 85 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 E A C2 L2 2 O D L L3 B2 B A1 C G P011P6/C 11/13 VNP28N04FI-VNB28N04-VNV28N04 PowerSO-10 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 3.35 TYP. 3.65 0.132 TYP. 0.144 MAX. A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 D 9.40 9.60 0.370 7 0.378 D1 7.40 7.60 0.291 0.30 0.300 E 9.30 9.50 0.366 0.374 E1 7.20 7.40 0.283 0.291 E2 7.20 7.60 0.283 0.300 E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 e 1.27 F 1.25 1.35 0.049 H 13.80 14.40 0 0.543 h 0.50 L 1.80 0.567 0.047 1.70 0.071 0.067 o α 0.053 0.002 1.20 q 0.240 0.050 8o 0 B 0.10 A B 10 e B = = E4 = = 5 0.25 E1 = = = 1 O E3 = E2 = E = = = H 6 SEATING PLANE DETAIL ”A” A C M Q D h = D1 = = = SEATING PLANE A F A1 A1 L DETAIL ”A” α 0068039-C 12/13 VNP28N04FI-VNB28N04-VNV28N04 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries reserve the bsidiaries (“ST”) (“S right to make changes, corrections, modifications or improvements, to this document, and the products and services herein at any vices described desc time, without notice. 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