VNP28N04FI
VNB28N04/VNV28N04
®
”OMNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
V clamp
R DS( on)
I lim
VNP28N04FI
VNB28N04
VNV28N04
42 V
42 V
42 V
0.035 Ω
0.035 Ω
0.035 Ω
28 A
28 A
28 A
■
■
■
■
■
■
■
■
■
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
d VNV28N04
VNV28
The VNP28N04FI, VNB28N04 and
are
monolithic
devices
made
using
er M0 Technology,
Te
STMicroelectronics VIPower
nt of standard
st
intended for replacement
power
o 50 KHz applications.
ap
MOSFETS in DC to
Built-in
wn, linear current limitation and
thermal shut-down,
clam protect the chip in harsh
overvoltage clamp
ISOWATT220
3
1
2
10
3
1
D2PAK
TO-263
1
PowerSO-10
enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
BLOCK
K DIAGRA
DIAGRAM (∗)
O
(∗)PowerSO-10PinConfiguration:INPUT=6,7,8,9,10;SOURCE=1,2,4,5;DRAIN=TAB
3EPTEMBERDocID Rev
1/13
VNP28N04FI-VNB28N04-VNV28N04
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Po werSO-10
D2PAK
Unit
ISOW AT T220
V DS
Drain-source Voltage (V in = 0)
Internally Clamped
V
V in
Input Voltage
18
V
ID
Drain Current
Internally Limited
A
IR
Reverse DC O utput Current
-28
A
V esd
Electrostatic Discharge (C= 100 pF , R=1.5 KΩ)
P to t
Total Dissipation at T c = 25 C
2000
o
V
83
34
W
Tj
Operating Junction T emperature
Internally Limited
o
C
Tc
Case Operating T emperature
Internally Limited
o
C
-55 to 150
o
C
T st g
Storage Temperature
THERMAL DATA
ISOW ATT 220
20 Pow e
erSO -10
R t hj-ca se Thermal Resistance Junction-case
R t hj-a mb Thermal Resistance Junction-ambient
Max
Max
3.75
75
62.5
1.5
50
D2PAK
1.5
62.5
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (-40 < Tj < 125 oC u
unless otherwise specified)
OFF
Symb ol
Parameter
Test
T
Cond ition s
V CLAMP
Drain-source Clamp
Voltage
I D = 200 mA
V CL TH
Drain-source Clamp
mp
Threshold Voltage
I D = 2 mA
V I NCL
Input-Source
Source Reverse
Re
Clamp
mp Voltage
Vol
I in = -1 mA
I DSS
Zero In
Input Voltage
Drain Current (V in = 0)
V DS = 13 V
V DS = 25 V
V in = 0
V in = 0
I I SS
Supply Current from
Input Pin
V DS = 0 V
Vin = 10 V
V in = 0
V in = 0
Min.
Typ .
Max.
Un it
34
42
51
V
31
V
-1.1
-0.1
V
100
200
μA
μA
250
600
μA
Typ .
Max.
Un it
3
V
A
A
0.035
0.05
Ω
Ω
A
A
0.07
0.1
Ω
Ω
O
ON (∗)
Symb ol
Parameter
Test Cond ition s
Min.
ID + Ii n = 1 mA
0.8
V IN(th)
Input Threshold
Voltage
V DS = Vin
R DS( on)
Static Drain-source On
Resistance
V i n = 10 V I D = 14
ID = 14
Vi n = 5 V
-40 < T j < 25 oC
V i n = 10 V I D = 14
Vi n = 5 V
ID = 14
o
T j = 125 C
2/13
VNP28N04FI-VNB28N04-VNV28N04
ELECTRICAL CHARACTERISTICS (continued)
DYNAMIC
Symb ol
g fs (∗)
C oss
Parameter
Test Cond ition s
Forward
Transconductance
V DS = 13 V
I D = 14 A
Output Capacitance
V DS = 13 V
f = 1 MHz
Min.
Typ .
9
18
Vin = 0
Max.
Un it
S
700
1100
pF
Typ .
Max.
Un it
SWITCHING (**)
Symb ol
Parameter
Test Cond ition s
Min.
t d(on)
tr
t d(of f)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall T ime
V DD = 15 V
V gen = 10 V
(see figure 3)
Id = 14 A
R gen = 10 Ω
100
330
400
55
155
300
800
00
900
4
400
nss
ns
ns
ns
t d(on)
tr
t d(of f)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall T ime
V DD = 15 V
V gen = 10 V
(see figure 3)
Id = 14 A
R gen = 1000 Ω
450
1
1.7
7.5
3.4
900
4
25
10
ns
μs
μs
μs
Turn-on Current Slope
V DD = 15 V
V i n = 10 V
Total Input Charge
V DD = 12 V
(di/dt) on
Qi
ID = 14 A
R gen = 10 Ω
ID = 10 A
V i n = 10 V
35
A/μs
60
nC
SOURCE DRAIN DIODE
Symb ol
Parameter
Test
T
Cond ition s
V SD (∗)
Forward O n Voltage
I SD = 14 A
t r r (∗∗)
Reverse Recoveryy
Time
Reverse Recovery
e
Charge
erse Recovery
R
Reverse
Current
I SSD = 14 A
di/dt = 100 A/μs
o
Tj = 25 C
V DD = 30 V
(see test circuit, figure 5)
Q r r (∗∗)
I RRM (∗∗)
Min.
Typ .
V in = 0
Max.
2
Un it
V
180
ns
0.45
μC
7
A
PROTECTION
TECTIO
O
Symb ol
Sym
I lim
Parameter
Test Cond ition s
Min.
Typ .
Max.
Un it
VDS = 13 V
V DS = 13 V
19
19
28
28
41
41
A
A
25
70
40
120
μs
μs
Drain Current Limit
V i n = 10 V
Vi n = 5 V
t dl im (∗∗)
Step Response
Current Limit
V i n = 10 V
Vi n = 5 V
T jsh (∗∗)
Overtemperature
Shutdown
150
o
C
T j rs (∗∗)
Overtemperature Reset
135
o
C
I gf (∗∗)
Fault Sink Current
V i n = 10 V
Vi n = 5 V
E as (∗∗)
Single Pulse
Avalanche Energy
starting T j = 25 C
V DD = 20 V
V i n = 10 V R gen = 1 KΩ L = 10 mH
VDS = 13 V
V DS = 13 V
o
50
20
2.5
mA
mA
J
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
3/13
VNP28N04FI-VNB28N04-VNV28N04
PROTECTION FEATURES
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (Iiss) flows into the Input pin in order to
supply the internal circuitry.
The device integrates:
- OVERVOLTAGE
CLAMP
PROTECTION:
internally set at 42V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current Id to Ilim whatever the Input
pin voltage. When the current limiter is active,
the device operates in the linear region, so
power dissipation may exceed the capability of
the heatsink. Both case and junction
temperatures increase, and if this phase lasts
reac
long enough, junction temperature mayy reach
the overtemperature threshold Tjshh.
O
4/13
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing
the chip temperature and are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperature cutout occurs at
minimum 150oC. The device is automatically
restarted when the chip temperature falls
below 135oC.
- STATUS FEEDBACK: In the case
ase of an
on, a Status
Sta
overtemperature fault condition,
rough the Input
Inp pin.
Feedback is provided through
ircuit disconnects
di
The internal protection circuit
the
conn
input from the gate and connects
it instead to
ground via an equivalent resistance of 100 Ω.
an be detected by monitoring the
The failure can
In
voltage at the Input
pin, which will be close to
nd potential.
potent
ground
ditional features of this device are ESD
Additional
protectio according to the Human Body model
protection
and the ability to be driven from a TTL Logic
circuit (with a small increase in RDS(on)).
VNP28N04FI-VNB28N04-VNV28N04
Thermal Impedance For ISOWATT220
Thermal Impedance For D2PAK / PowerSO-10
Derating Curve
Output Characteristics
acteristics
Transco
Transconductance
Static Drain-Source On Resistance vs Input
Voltage
O
5/13
VNP28N04FI-VNB28N04-VNV28N04
Static Drain-Source On Resistance
Static Drain-Source On Resistance
Input Charge vs Input Voltage
Variation
Capacitance Variations
Normaliz
Normalized Input Threshold Voltage vs
Tem
Temperature
Normalized On Resistance vs Temperature
O
6/13
VNP28N04FI-VNB28N04-VNV28N04
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-on Current Slope
Turn-off Drain-Source
n-Source Voltage Slope
Turn-off Drain-Source Voltage Slope
Switching Time Resistive Load
O
7/13
VNP28N04FI-VNB28N04-VNV28N04
Switching Time Resistive Load
Switching Time Resistive Load
Current Limit vs Junction Temperature
Step Response
nse Current
Curre Limit
Source D
Drain Diode Forward Characteristics
O
8/13
VNP28N04FI-VNB28N04-VNV28N04
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Resistive Load
arge Test Circuit
Fig. 4: Input Charge
Te Circuit For Inductive Load Switching
Fig. 5: Test
D
And Diode
Recovery Times
Fig. 6: Waveforms
9/13
VNP28N04FI-VNB28N04-VNV28N04
ISOWATT220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.4
0.7
0.015
0.027
F
0.75
1
0.030
39
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.06
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
L2
0.409
16
L3
0.630
28.6
30.6
1.126
1.204
9.8
6
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
93
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L4
L3
L6
O
F
F1
L7
F2
H
G
G1
¯
1 2 3
L2
10/13
L4
P011G
VNP28N04FI-VNB28N04-VNV28N04
TO-263 (D2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.3
4.6
0.169
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.25
1.4
0.049
0.055
C
0.45
0.6
0.017
0.02
0.023
C2
1.21
1.36
0.047
0.053
D
8.95
9.35
0.352
0.368
E
10
10.28
393
0.393
0.404
G
4.88
5.28
0.192
0.208
L
15
85
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
E
A
C2
L2
2
O
D
L
L3
B2
B
A1
C
G
P011P6/C
11/13
VNP28N04FI-VNB28N04-VNV28N04
PowerSO-10 MECHANICAL DATA
mm
DIM.
MIN.
inch
MAX.
MIN.
A
3.35
TYP.
3.65
0.132
TYP.
0.144
MAX.
A1
0.00
0.10
0.000
0.004
B
0.40
0.60
0.016
0.024
c
0.35
0.55
0.013
0.022
D
9.40
9.60
0.370
7
0.378
D1
7.40
7.60
0.291
0.30
0.300
E
9.30
9.50
0.366
0.374
E1
7.20
7.40
0.283
0.291
E2
7.20
7.60
0.283
0.300
E3
6.10
6.35
0.240
0.250
E4
5.90
6.10
0.232
e
1.27
F
1.25
1.35
0.049
H
13.80
14.40
0
0.543
h
0.50
L
1.80
0.567
0.047
1.70
0.071
0.067
o
α
0.053
0.002
1.20
q
0.240
0.050
8o
0
B
0.10 A B
10
e
B
=
=
E4
=
=
5
0.25
E1
=
=
=
1
O
E3
=
E2
=
E
=
=
=
H
6
SEATING
PLANE
DETAIL ”A”
A
C
M
Q
D
h
= D1 =
=
=
SEATING
PLANE
A
F
A1
A1
L
DETAIL ”A”
α
0068039-C
12/13
VNP28N04FI-VNB28N04-VNV28N04
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DocID Rev
13/13