VNB35NV04

® VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNB35NV04 VNP35NV04 VNV35NV04 VNW35NV04 (*) For PowerSO-10 only RDS(on) 10 mΩ (*) Ilim Vclamp 10 30 A 40 V 1 3 1 D2PAK PowerSO-10™ n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP n LOW CURRENT DRAWN FROM INPUT PIN n DIAGNOSTIC FEEDBACK THROUGH INPUT 3 1 2 1 3 2 TO-220 TO-247 ORDER CODES: VNB35NV04 VNP35NV04 VNV35NV04 VNW35NV04 PIN n ESD PROTECTION n DIRECT ACCESS TO THE GATE OF THE D2PAK TO-220 PowerSO-10™ TO-247 POWER MOSFET (ANALOG DRIVING) n COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, BLOCK DIAGRAM intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. DRAIN 2 Overvoltage Clamp INPUT 1 Gate Control Over Temperature Linear Current Limiter 3 SOURCE FC01000 March 2004 1/19 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 ABSOLUTE MAXIMUM RATING Symbol VDS VIN IIN RIN MIN ID IR VESD1 VESD2 Ptot Tj Tc Tstg Parameter Drain-source Voltage (VIN=0V) Input Voltage Input Current Minimum Input Series Impedance Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5KΩ, C=100pF) Electrostatic Discharge on output pin only (R=330Ω, C=150pF) Total Dissipation at Tc=25°C Operating Junction Temperature Case Operating Temperature Storage Temperature PowerSO-10™ Value D2PAK TO-220 Internally Clamped Internally Clamped +/-20 4.7 Internally Limited -30 4000 16500 125 125 125 Internally limited Internally limited -55 to 150 208 Unit TO-247 V V mA Ω A A V V W °C °C °C CONNECTION DIAGRAM (TOP VIEW) INPUT INPUT INPUT INPUT INPUT 6 7 8 9 10 11 DRAIN 5 4 3 2 1 SOURCE SOURCE N.C. SOURCE SOURCE (*) For the pins configuration related to TO-220, TO-247, D2PAK, see outlines at page 1. CURRENT AND VOLTAGE CONVENTIONS ID VDS DRAIN IIN RIN INPUT SOURCE VIN 2/19 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 THERMAL DATA Symbol Rthj-case Rthj-amb (*) When PowerSO-10™ Thermal Resistance Junction-case}}} MAX 1 Thermal Resistance Junction-ambient MAX 50(*) Parameter Value D2PAK 1 50(*) TO-220 1 50 TO-247 0.6 30 Unit °C/W °C/W mounted on a standard single-sided FR4 board with 50mm2 of Cu (at least 35 µm thick) connected to all DRAIN pins. ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified) OFF Symbol VCLAMP VCLTH VINTH IISS VINCL IDSS Parameter Drain-source Clamp Voltage Drain-source Clamp Threshold Voltage Input Threshold Voltage Supply Current from Input Pin Input-Source Clamp Voltage Zero Input Voltage Drain Current (VIN=0V) Test Conditions VIN=0V; ID=15A VIN=0V; ID=2mA VDS=VIN; ID=1mA VDS=0V; VIN=5V IIN=1mA IIN=-1mA VDS=13V; VIN=0V; Tj=25°C VDS=25V; VIN=0V 6 -1.0 Min 40 36 0.5 100 6.8 2.5 150 8 -0.3 30 75 Typ 45 Max 55 Unit V V V µA V µA ON Max Symbol Parameter Static Drain-source On Resistance Test Conditions VIN=5V; ID=15A; Tj=25°C VIN=5V; ID=15A; Tj=150°C PowerSO-10 10 20 D2PAK TO-220 / TO-247 13 24 Unit mΩ RDS(on) 3/19 1 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified) DYNAMIC Symbol gfs (*) COSS Parameter Forward Transconductance Output Capacitance Test Conditions VDD=13V; ID=15A VDS=13V; f=1MHz; VIN=0V Min Typ 35 1300 Max Unit S pF SWITCHING Symbol td(on) tr td(off) tf td(on) tr td(off) tf (di/dt)on Qi Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Current Slope Total Input Charge Test Conditions VDD=15V; ID=15A Vgen=5V; Rgen=RIN MIN=4.7Ω (see figure 1) VDD=15V; ID=15A Vgen=5V; Rgen=2.2KΩ (see figure 1) VDD=15V; ID=15A Vgen=5V; Rgen=RIN MIN=4.7Ω VDD=12V; ID=15A; VIN=5V Igen =2.13mA (see figure 5) Min Typ 150 840 980 600 4 27 34 31 18 118 Max 500 2500 3000 1500 12 100 120 110 Unit ns ns ns ns µs µs µs µs A/µs nC SOURCE DRAIN DIODE Symbol VSD (*) trr Qrr IRRM Parameter Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions ISD=15A; VIN=0V ISD=15A; dI/dt=100A/µs Min Typ 0.8 400 1.4 7 Max Unit V ns µC A VDD=30V; L=200µH Reverse Recovery Current (see test circuit, figure 2) PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified) Symbol Ilim tdlim Tjsh Tjrs Igf Eas Parameter Drain Current Limit Step Response Current Limit Overtemperature Shutdown Overtemperature Reset Fault Sink Current Single Pulse Avalanche Energy Test Conditions VIN=6V; VDS=13V VIN=6V; VDS=13V Min 30 Typ 45 50 150 135 10 1.7 175 200 Max 60 Unit A µs °C °C mA J VIN=5V; VDS=13V; Tj=Tjsh starting Tj=25°C; VDD=24V VIN=5V; Rgen=RIN MIN=4.7Ω; L=24mH (see figures 3 & 4) 15 20 (*) Pulsed: Pulse duration = 300µs, duty cycle 1.5% 4/19 2 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 PROTECTION FEATURES During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 25KHz. The only difference from the user’s standpoint is that a small DC current IISS (typ. 100µA) flows into the INPUT pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current ID to Ilim whatever the INPUT pin voltages is. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh. - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted when the chip temperature falls of about 15°C below shut-down temperature. - STATUS FEEDBACK: in the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current Igf, the INPUT pin will fall to 0V. This will not however affect the device operation: no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current IISS. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit. 5/19 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 Fig.1: Switching Time Test Circuit for Resistive Load VD Rgen Vgen ID 90% tr td(on) 10% td(off) tf t Vgen t Fig.2: Test Circuit for Diode Recovery Times A D I A FAST DIODE OMNIFET S 25 Ω B L=100uH B D Rgen VDD I OMNIFET S Vgen 8.5 Ω 6/19 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 Fig. 3: Unclamped Inductive Load Test Circuits Fig. 4: Unclamped Inductive Waveforms RGEN VIN PW Fig. 5: Input Charge Test Circuit Fig 6 : Thermal Impedance for TO-220 VIN GEN ND8003 Fig. 7:Thermal Impedance for TO-247 7/19 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 Source-Drain Diode Forward Characteristics Vsd (mV) 950 Static Drain Source On Resistance Rds(on) (mOhm) 50 900 Vin=2.5V Tj=-40ºC Vin=0V 850 40 Tj=25ºC 800 30 Tj=150ºC 750 20 700 650 0 5 10 15 20 25 30 35 10 0 1 2 3 4 5 6 Id (A) Id (A) PowerSO-10 Static Drain-Source On resistance Vs. Input Voltage Rds(on) (mOhm) 27.5 25 22.5 20 17.5 15 12.5 Tj=25°C Id=15A Id=7.5A D2PAK, TO-220 & TO-247 Static Drain-Source On resistance Vs. Input Voltage Rds(on) (mOhm) 30 Id=15A Id=7.5A 25 Tj=150ºC 20 Tj=150°C Id=15A Id=7.5A 15 Id=15A Id=7.5A Tj=25ºC 10 10 5 7.5 Tj=-40°C Tj=-40ºC Id=15A Id=7.5A Id=15A Id=7.5A 5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 0 2.5 3 3.5 4 4.5 5 5.5 6 6.5 Vin (V) Vin (V) PowerSO-10 Static Drain-Source On Resistance Vs. Id Rds(on) (mOhm) 30 D2PAK, TO-220 & TO-247 Static Drain-Source On Resistance Vs. Id Rds(on) (mOhm) 24 21 25 Vin=5V 20 Tj=150ºC 18 15 12 Tj=150ºC 15 Tj=25ºC 9 10 Tj=25ºC Tj=-40ºC Tj=-40ºC 6 5 Vin=5V 3 0 0 5 10 15 20 25 30 35 0 4 8 12 16 20 24 28 32 0 Id (A) Id (A) 8/19 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 Transconductance Gfs (S) 54 Transfer Characteristics Idon (A) Tj=-40ºC 48 50 45 Vds=13V 42 36 30 Tj=25ºC Tj=150ºC Vds=13.5V 40 35 30 Tj=-40ºC Tj=150ºC 25 20 24 18 15 12 6 0 0 4 8 12 16 20 24 28 32 Tj=25ºC 10 5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 Id (A) Vin (V) Output Characteristics Id (A) 55 50 45 Normalized On Resistance Vs. Temperature Rds(on) (mOhm) 4 3.5 Vin=4V Vin=4.5V Vin=3.5V Vin=3V 3 2.5 2 1.5 1 Vin=5V Id=15A 40 35 30 25 20 15 Vin=2.5V 10 0.5 5 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 0 -50 -25 0 25 50 75 100 125 150 175 Vds (V) Tc (ºC) Turn On Current Slope di/dt (A/us) 20 17.5 15 12.5 10 7.5 5 Turn On Current Slope di/dt (A/us) 10 9 Vin=5V Vdd=15V Id=15A 8 7 6 5 4 3 2 Vin=3.5V Vdd=15V Id=15A 2.5 0 0 150 300 450 600 750 900 1050 1 0 0 125 250 375 500 625 750 875 1000 1125 Rg (Ohm) Rg (Ohm) 9/19 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 Input Voltage Vs. Input Charge Vin (V) 8 7 6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 Turn off drain source voltage slope dV/dt (V/us) 160 140 Vds=12V Id=15A 120 100 80 60 40 20 0 0 150 Vin=5V Vdd=15V Id=15A 300 450 600 750 900 1050 Qg (nC) Rg (Ohm) Turn Off Drain-Source Voltage Slope dV/dt (V/us) 160 140 120 100 80 60 40 20 0 0 150 300 450 600 750 900 1050 Switching Time Resistive Load T (us) 40 35 td(off) Vdd=15V Id=15A Rg=4.7ohm tf tr Vin=3.5V Vdd=15V Id=15A 30 25 20 15 10 5 0 0 td(on) 300 600 900 1200 1500 1800 2100 2400 Rg (Ohm) Rg (Ohm) Switching Time Resistive Load T (ns) 1750 Normalized Input Threshold Voltage Vs. Temperature Vinth (V) 2 1500 tr Vdd=15V Id=15A Rg=4.7ohm td(off) 1.75 1.5 1.25 Vds=Vin Id=1mA 1250 1000 1 750 tf 500 0.75 0.5 0.25 0 250 td(on) 0 3 3.5 4 4.5 5 5.5 6 6.5 7 -50 -25 0 25 50 75 100 125 150 175 Vin (V) Tc (ºC) 10/19 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 Current Limit Vs. Junction Temperature Ilim (A) 100 90 80 70 60 50 40 30 20 60 10 0 -50 -25 0 25 50 75 100 125 150 175 40 0 5 10 15 20 25 30 35 100 Step Response Current Limit Tdlim (us) 180 Vin=6V Vds=13V 160 Vin=6V 140 120 80 Tc (ºC) Vdd (V) Derating Curve 11/19 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 TO-220 MECHANICAL DATA mm. DIM. MIN. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 1.9Gr. (Typ.) 3.85 2.95 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 ∅P Q Package Weight 12/19 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 TO-247 MECHANICAL DATA DIM. A D E F F3 F4 G H L L3 L4 L5 M Dia. 2 3.55 15.3 19.7 14.2 34.6 5.5 3 3.65 0.079 0.140 mm. MIN. 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 0.144 TYP MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 13/19 1 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 PowerSO-10™ MECHANICAL DATA DIM. A A (*) A1 B B (*) C C (*) D D1 E E2 E2 (*) E4 E4 (*) e F F (*) H H (*) h L L (*) α α (*) (*) Muar only POA P013P mm. MIN. 3.35 3.4 0.00 0.40 0.37 0.35 0.23 9.40 7.40 9.30 7.20 7.30 5.90 5.90 1.27 1.25 1.20 13.80 13.85 0.50 1.20 0.80 0º 2º 1.80 1.10 8º 8º 0.047 0.031 0º 2º 1.35 1.40 14.40 14.35 0.049 0.047 0.543 0.545 TYP MAX. 3.65 3.6 0.10 0.60 0.53 0.55 0.32 9.60 7.60 9.50 7.60 7.50 6.10 6.30 MIN. 0.132 0.134 0.000 0.016 0.014 0.013 0.009 0.370 0.291 0.366 0.283 0.287 0.232 0.232 inch TYP. MAX. 0.144 0.142 0.004 0.024 0.021 0.022 0.0126 0.378 0.300 0.374 300 0.295 0.240 0.248 0.050 0.053 0.055 0.567 0.565 0.002 0.070 0.043 8º 8º B 0.10 A B 10 H E E2 E E4 1 SEATING PLANE e 0.25 B DETAIL "A" A C D = D1 = = = SEATING PLANE h A F A1 A1 L DETAIL "A" α P095A 14/19 1 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 D2PAK MECHANICAL DATA DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0º 4.88 15 1.27 1.4 2.4 0.4 8º 10 8.5 5.28 15.85 1.4 1.75 3.2 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 P011P6 15/19 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 TO-220 TUBE SHIPMENT (no suffix) A B Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) All dimensions are in mm. 50 1000 532 5.5 31.4 0.75 C 16/19 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 PowerSO-10™ SUGGESTED PAD LAYOUT 14.6 - 14.9 B TUBE SHIPMENT (no suffix) CASABLANCA MUAR C 10.8- 11 6.30 A A C 0.67 - 0.73 1 2 3 4 5 10 9 8 7 6 1.27 0.54 - 0.6 B 9.5 All dimensions are in mm. Base Q.ty Bulk Q.ty Tube length (± 0.5) Casablanca Muar 50 50 1000 1000 532 532 A B C (± 0.1) 0.8 0.8 10.4 16.4 4.9 17.2 TAPE AND REEL SHIPMENT (suffix “13TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 600 600 330 1.5 13 20.2 24.4 60 30.4 All dimensions are in mm. TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 (± 0.1) P D (± 0.1/-0) D1 (min) F (± 0.05) K (max) P1 (± 0.1) 24 4 24 1.5 1.5 11.5 6.5 2 End All dimensions are in mm. Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components 17/19 1 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 D2PAK FOOTPRINT A TUBE SHIPMENT (no suffix) C 16.90 12.20 1.60 3.50 9.75 5.08 B Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) All dimensions are in mm. 50 500 532 6 21.3 0.6 All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix “13TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 24.4 60 30.4 All dimensions are in mm. TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 (± 0.1) P D (± 0.1/-0) D1 (min) F (± 0.05) K (max) P1 (± 0.1) 24 4 16 1.5 1.5 11.5 6.5 2 End All dimensions are in mm. Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components 18/19 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2004 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 19/19