VND10B(012Y)

VND10B DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY Figure 1. Package Table 1. General Features Type VDSS RDS(on) In(1) VCC VND10B 40 V 0.1 Ω 3.4 A 26 V ) s ( ct Note: 1. In= Nominal current according to ISO definition for high side automotive switch. The Nominal Current is the current at Tc = 85 °C for battery voltage of 13V which produces a voltage drop of 0.5 V. u d o r P e ■ OUTPUT CURRENT (CONTINUOUS): 14 A @ Tc=85°C PER CHANNEL ■ 5V LOGIC LEVEL COMPATIBLE INPUT ■ THERMAL SHUT-DOWN ■ UNDER VOLTAGE PROTECTION ■ OPEN DRAIN DIAGNOSTIC OUTPUT ■ INDUCTIVE LOAD FAST DEMAGNETIZATION ■ VERY LOW STAND-BY POWER DISSIPATION PENTAWATT (vertical) t e l o ) (s s b O t c u DESCRIPTION The VND10B is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip from over temperature and short circuit. The status output provides an indication of open load in on state, open load in off state, overtemperature conditions and stuck-on to VCC. od r P e PENTAWATT (horizontal) PENTAWATT (in-line) t e l o s b O Table 2. Order Codes Package Tube Tape and Reel PENTAWATT Vert. VND10B – PENTAWATT Hor. VND10B(011Y) – PENTAWATT In line VND10B(012Y) – REV. 2 June 2004 1/13 VND10B Figure 2. Block Diagram ) s ( ct u d o r P e t e l o Table 3. Absolute Maximum Ratings t c u Symbol Value Unit 40 V Output Current (cont.) at Tc = 85 °C 14 A RMS Output Current at Tc = 85 °C 14 A Reverse Output Current at Tc = 85 °C –14 A Input Current ±10 mA Reverse Supply Voltage –4 V ISTAT Status Current ±10 mA VESD Electrostatic Discharge (1.5 kΩ; 100 pF) 2000 V V(BR)DSS IOUT IOUT(RMS) o s b IIN – VCC od Drain-Source Breakdown Voltage Pr Ptot Power Dissipation at Tc = 25 °C 75 W Tj Junction Operating Temperature -40 to 150 °C Storage Temperature -55 to 150 °C Tstg 2/13 Parameter e t e l IR O ) (s s b O VND10B Figure 3. Connection Diagram ) s ( ct u d o Figure 4. Current and Voltage Conventions r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Table 4. Thermal Data Symbol Parameter Value Unit Rthj-case Thermal Resistance Junction-case Max 1.65 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 60 °C/W 3/13 VND10B ELECTRICAL CHARACTERISTICS (8 < VCC < 16 V; -40 ≤ Tj ≤ 125 °C unless otherwise specified) Table 5. Power Symbol Parameter Test Conditions VCC Supply Voltage In(2) Nominal Current Tc = 85 °C; VDS(on) ≤ 0.5; VCC = 13 V Ron On State Resistance IOUT = In; VCC = 13 V; Tj = 25 °C Supply Current Off State; Tj = 25 °C; VCC = 13 V VDS(MAX) Maximum Voltage Drop IOUT = 13 A; Tj = 85 °C; VCC = 13 V Ri Output to GND internal Impedance Tj = 25 °C IS Min. Typ. Max. Unit 6 13 26 V 3.4 5.2 A 0.065 0.1 Ω 100 µA 2 V 20 KΩ 35 1.2 5 10 ) s ( t c u d Note: 2. In= Nominal current according to ISO definition for high side automotive switch. The Nominal Current is the current at Tc = 85 °C for battery voltage of 13V which produces a voltage drop of 0.5 V. Table 6. Switching Symbol td(on)(3) tr(3) td(off)(3) Parameter Min. Typ. Max. Unit 5 35 200 µs 28 110 360 µs 10 140 500 µs ROUT = 2.7 Ω 28 75 360 µs ROUT = 2.7 Ω 0.003 0.1 A/µs ROUT = 2.7 Ω 0.005 0.1 A/µs Max. Unit 1.5 V Note 4 V 0.9 1.5 V 30 100 µA 6 –0.7 7 V V Turn-on Delay Time Of Output Current ROUT = 2.7 Ω Rise Time Of Output Current ROUT = 2.7 Ω Turn-off Delay Time Of Output Current ROUT = 2.7 Ω ) s ( ct Fall Time Of Output Current tf(3) du (di/dt)on Turn-on Current Slope (di/dt)off Turn-off Current Slope ro P e e t e ol Test Conditions o r P bs -O Note: 3. See Switching Time Waveforms. t e l o Table 7. Logic Input Symbol bs VIL O Parameter Test Conditions Min. Input Low Level Voltage VIH Input High Level Voltage 3.5 VI(hyst) Input Hysteresis Voltage 0.2 IIN VICL Typ. Input Current VIN = 5 V; Tj = 25 °C Input Clamp Voltage IIN = 10 mA IIN = –10 mA 5 Note: 4. The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. 4/13 VND10B ELECTRICAL CHARACTERISTICS (cont’d) Table 8. Protection and Diagnostics Symbol Parameter Test Conditions VSTAT Status Voltage Output Low VUSD Under Voltage Shut Down VSCL Status Clamp Voltage TTSD Thermal Shut-down Temperature TSD(hyst.) Reset Temperature VOL(5) Open Voltage Level ISTAT = 1.6 mA ISTAT = 10 mA ISTAT = –10 mA Status Delay tpol(6) Status Delay Max. Unit 0.4 V 3.5 4.5 6 V 5 6 –0.7 7 V V 140 160 180 °C 50 °C ) s ( t 125 Off-State °C 2.5 Open Load Current Level (6) tpovl Typ. Thermal Shut-down Hysteresis TR IOL Min. e t e ol Note: 5. IOL(off) = (VCC -VOL)/ROL (see figure 5) 6. tpovl tpol: ISO definition (see figure 6). Figure 5. Note 5 relevant figure 5 V 1.4 A 5 10 µs 500 2500 µs od 0.6 Pr 50 uc 4 0.9 s b O Figure 6. Note 6 relevant figure ) (s t c u d o r P e t e l o s b O 5/13 VND10B Figure 7. Switching Time Waveforms ) s ( ct u d o FUNCTIONAL DESCRIPTION The device has a common diagnostic output for both channels which indicates open load in onstate, open load in off-state, over temperature conditions and stuck-on to VCC. From the falling edge of the input signal, the status output, initially low to signal a fault condition (overtemperature or open load on-state), will go back to a high state with a different delay in case of overtemperature (tpovl) and in case of open open load (tpol) respectively. This feature allows to discriminate the nature of the detected fault. To protect the device against short circuit and over current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 °C. When this temperature returns to 125 °C the switch is automatically turned on again. In short circuit the protection reacts with virtually no delay, the sensor (one for each channel) being located inside each of the two Power MOS areas. This positioning allows the device to operate with one channel in automatic thermal cycling and the other one on a normal load. An internal function of the devices ensures the fast demagnetization of inductive loads with a typical voltage (Vdemag) of -18V. This function allows to greatly reduces the power dissipation according to the formula: Pdem = 0.5 • Lload • (Iload)2 • [(VCC+Vdemag)/ Vdemag] • f where f = switching frequency and Vdemag = demagnetization voltage ) (s t c u d o r P e t e l o s b O 6/13 r P e t e l o The maximum inductance which causes the chip temperature to reach the shut-down temperature in a specified thermal environment is a function of the load current for a fixed VCC, Vdemag and f according to the above formula. In this device if the GND pin is disconnected, with VCC not exceeding 16V, both channel will switch off. s b O PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1(GND) and ground, as shown in the typical application circuit (Figure 9). The consequences of the voltage drop across this diode are as follows: – If the input is pulled to power GND, a negative voltage of -Vf is seen by the device. (VIL, VIH thresholds and VSTAT are increased by Vf with respect to power GND). – The undervoltage shutdown level is increased by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in Figure 10), which becomes the common signal GND for the whole control board avoiding shift of VIH, VIL and VSTAT. This solution allows the use of a standard diode. VND10B Table 9. Truth Table Input 1 Input 2 Output 1 Output 2 Diagnostic Normal Operation L H L H L H H L L H L H L H H L H H H H Under voltage X X L L H Channel 1 H X L X L Channel 2 X H X L L Channel 1 H L X L H L X L L L(7) Channel 2 X L H L X L H L Channel 1 H L X L H H Channel 2 X L H L X L Thermal Shutdown Open Load Output Shorted to VCC Note: 7. With additional external resistor. t e l o Figure 8. Waveforms ) (s r P e u d o ) s ( ct X L H H L L(7) L L L L s b O t c u d o r P e t e l o s b O 7/13 VND10B Figure 9. Typical Application Circuit With A Schottky Diode For Reverse Supply Protection ) s ( ct u d o r P e t e l o Figure 10. Typical Application Circuit With Separate Signal Ground ) (s t c u d o r P e t e l o s b O 8/13 s b O VND10B PACKAGE MECHANICAL Table 10. PENTAWATT (vertical) Mechanical Data millimeters Symbol Min Typ Max A 4.8 C 1.37 D 2.4 2.8 D1 1.2 1.35 E 0.35 0.55 F 0.8 1.05 F1 1 G 3.2 3.4 G1 6.6 6.8 H2 H3 10.05 L2 23.05 23.4 L3 25.3 25.65 L5 2.6 L6 15.1 L7 6 Dia. 3.65 ) s ( ct ) s ( ct 1.4 e t e l -O o s b 3.6 o r P du 7 10.4 10.4 23.8 26.1 3 15.8 6.6 3.85 Figure 11. PENTAWATT (vertical) Package Dimensions u d o r P e t e l o s b O Note: Drawing is not to scale. 9/13 VND10B Table 11. PENTAWATT (horizontal) Mechanical Data millimeters Symbol Min Typ Max A 4.8 C 1.37 D 2.4 2.8 D1 1.2 1.35 E 0.35 0.55 F 0.8 1.05 F1 1 1.4 G 3.2 3.4 3.6 G1 6.6 6.8 7 ) s ( ct H2 10.4 H3 10.05 L 14.2 L1 5.7 L2 14.6 L3 3.5 L5 2.6 L6 15.1 L7 6 Dia. 3.65 10.4 ro o s b O ) s ( t c r P e t e l o s b O Note: Drawing is not to scale. 10/13 P e let Figure 12. PENTAWATT (horizontal) Package Dimensions u d o du 15 6.2 15.2 4.1 3 15.8 6.6 3.85 VND10B Table 12. PENTAWATT (in-line) Mechanical Data millimeters Symbol Min Typ Max A 4.8 C 1.37 D 2.4 2.8 D1 1.2 1.35 E 0.35 0.55 F 0.8 1.05 F1 1 1.4 G 3.2 3.4 3.6 G1 6.6 6.8 7 ) s ( ct H2 10.4 H3 10.05 L2 23.05 23.4 L3 25.3 25.65 L5 2.6 L6 15.1 L7 6 Dia. 3.65 du 10.4 t e l o P e bs ro 23.8 26.1 3 15.8 6.6 3.85 O ) Figure 13. PENTAWATT (in-line) Package Dimensions s ( t c u d o r P e t e l o s b O Note: Drawing is not to scale. 11/13 VND10B REVISION HISTORY Table 13. Revision History Date Revision Description of Changes September-1994 1 First Issue 18-June-2004 2 Stylesheet update. No content change. ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 12/13 s b O VND10B ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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