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VND5E006ASPTR-E

VND5E006ASPTR-E

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    BSOP16

  • 描述:

    IC PWR SWITCH N-CHAN 1:1 PWRSO16

  • 数据手册
  • 价格&库存
VND5E006ASPTR-E 数据手册
VND5E006ASP-E Double channel high-side driver with analog current sense for automotive applications Datasheet - production data – Protection against loss of ground and loss of VCC – Overtemperature shutdown with auto restart (thermal shutdown) – Inrush current active management by power limitation – Reverse battery protected with self switch of the PowerMOS – Electrostatic discharge protection PowerSO-16 Features Max transient supply voltage VCC 41 V Operating voltage range VCC 4.5 to 28 V Typ on-state resistance (per ch.) RON 5 mΩ Current limitation (typ) ILIMH 100 A Off-state supply current IS 2 µA(1) 1. Typical value with all loads connected. • General – Very low standby current – 3.0 V CMOS compatible inputs – Optimized electromagnetic emissions – Very low electromagnetic susceptibility – Compliance with European directive 2002/95/EC – Very low current sense leakage • Diagnostic functions – Proportional load current sense – High current sense precision for wide currents range – Current sense disable – Off-state openload detection – Output short to VCC detection – Overload and short to ground (power limitation) indication – Thermal shutdown indication • Protection – Undervoltage shutdown – Overvoltage clamp – Load current limitation – Self limiting of fast thermal transients October 2013 This is information on a product in full production. Applications • All types of resistive, inductive and capacitive loads Description The VND5E006ASP-E is a double channel high-side driver manufactured using ST proprietary VIPower™ M0-5 technology and housed in PowerSO-16 package. The device is designed to drive 12 V automotive grounded loads, and to provide protection and diagnostics. They also implement a 3 V and 5 V CMOS compatible interface for the use with any microcontroller. The device integrates advanced protective functions such as load current limitation, inrush and overload active management by power limitation, overtemperature shut-off with auto restart and overvoltage active clamp. A dedicated analog current sense pin is associated with every output channel providing enhanced diagnostic functions including fast detection of overload and short-circuit to ground through power limitation indication, overtemperature indication, shortcircuit to VCC diagnosis and on-state and off-state open-load detection. The current sensing and diagnostic feedback of the whole device can be disabled by pulling the CS_DIS pin high to share the external sense resistor with similar devices. DocID17362 Rev 6 1/37 www.st.com Contents VND5E006ASP-E Contents 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.4 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2.5 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3.1 Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3.2 MCU I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3.3 Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 3.3.1 3.4 4 Maximum demagnetization energy (VCC = 13.5 V) . . . . . . . . . . . . . . . . . 27 Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 4.1 5 Short to VCC and off-state open-load detection . . . . . . . . . . . . . . . . . . 26 PowerSO-16 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 5.1 ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 5.2 PowerSO-16 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 5.3 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 6 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 2/37 DocID17362 Rev 6 VND5E006ASP-E List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Pin function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 6 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Switching (VCC = 13 V; Tj = 25 °C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Logic inputs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Protections and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Current sense (8 V < VCC < 18 V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Open-load detection (8 V < VCC < 18 V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Electrical transient requirements (part 1/3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Electrical transient requirements (part 2/3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Electrical transient requirements (part 3/3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 PowerSO-16 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 DocID17362 Rev 6 3/37 3 List of figures VND5E006ASP-E List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. Figure 34. Figure 35. Figure 36. Figure 37. Figure 38. Figure 39. Figure 40. Figure 41. Figure 42. 4/37 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Open-load off-state delay timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Delay response time between rising edge of output current and rising edge of current sense (CS enabled). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Output voltage drop limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 IOUT/ISENSE vs IOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Maximum current sense ratio drift vs load current(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Normal operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Overload or short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Intermittent overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Off-state open-load with external circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Short to VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 TJ evolution in overload or short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Off-state output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Input high level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Input low level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 On-state resistance vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 On-state resistance vs VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 ILIMH vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 CS_DIS clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Low level CS_DIS voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 High level CS_DIS voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Maximum turn-off current versus inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 PowerSO-16 PC board(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Rthj-amb vs PCB copper area in open box free air condition (one channel ON) . . . . . . . . 28 PowerSO-16 thermal impedance junction ambient single pulse (one channel ON) . . . . . . 29 Thermal fitting model of a double channel HSD in PowerSO-16(1) . . . . . . . . . . . . . . . . . . 29 PowerSO-16 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 PowerSO-16 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 PowerSO-16 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 PowerSO-16 suggested pad layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 DocID17362 Rev 6 VND5E006ASP-E 1 Block diagram and pin description Block diagram and pin description Figure 1. Block diagram 9&& 5HYHUVH %DWWHU\ 3URWHFWLRQ 6LJQDO&ODPS 8QGHUYROWDJH ,1 &RQWURO 'LDJQRVWLF  &RQWURO 'LDJQRVWLF  3RZHU &ODPS '5,9(5 ,1 &+ 921 /L PLWDWLRQ 2YHU WHPS &XUUHQW /LPLWDWLRQ &6B ',6 9 6(16(+ &6 &XUUHQW 6HQVH &6 &+ )DXOW /2*,& 287 287 29(5/2$'3527(&7,21 $&7,9(32:(5/,0,7$7,21 *1' $*9 Table 1. Pin function Name VCC Function Battery connection. OUTn Power output. GND Ground connection. INn Voltage controlled input pin with hysteresis, CMOS compatible. Controls output switch state. CSn Analog current sense pin, delivers a current proportional to the load current. CS_DIS Active high CMOS compatible pin, to disable the current sense pin. DocID17362 Rev 6 5/37 36 Block diagram and pin description VND5E006ASP-E Figure 2. Configuration diagram (top view)         ,1B &6B 1& &6B',6 *1' 1& &6B ,1B    287B 287B 287B 287B      287B 287B 287B 287B  9 && $*9 Table 2. Suggested connections for unused and not connected pins 6/37 Connection / pin Current sense N.C. Output Input CS_DIS Floating Not allowed X X X X To ground Through 1 KΩ resistor X Not allowed Through 10 KΩ resistor Through 10 KΩ resistor DocID17362 Rev 6 VND5E006ASP-E 2 Electrical specifications Electrical specifications Figure 3. Current and voltage conventions ,6 9&& 9&& ,287 ,&6' 287 &6B',6 9&6' 9287 ,6(16( ,,1 &6 ,1 9,1 96(16( *1' ,*1' $*9 2.1 Absolute maximum ratings Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to the conditions in this section for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. Table 3. Absolute maximum ratings Symbol Value Unit DC supply voltage 28 V Transient supply voltage (T < 400 ms, RLOAD > 0.5 Ω) 41 V -VCC Reverse DC supply voltage 16 V IOUT DC output current Internally limited A -IOUT Reverse DC output current 60 A DC input current -1 to 10 mA DC current sense disable input current -1 to 10 mA VCC-41 +VCC V V 600 mJ VCC VCCPK IIN ICSD Parameter VCSENSE Current sense maximum voltage EMAX Maximum switching energy (single pulse) (L = 1.4 mH; RL = 0 Ω; Vbat = 13.5 V; Tjstart = 150 °C; IOUT = IlimL(Typ.)) DocID17362 Rev 6 7/37 36 Electrical specifications VND5E006ASP-E Table 3. Absolute maximum ratings (continued) Symbol Parameter Value VESD Electrostatic discharge (Human Body Model: R = 1.5 KΩ; C = 100 pF) – Input – Current sense – CS_DIS – Output – VCC 4000 2000 4000 5000 5000 VESD Charge device model (CDM-AEC-Q100-011) 750 V Junction operating temperature -40 to 150 °C Storage temperature -55 to 150 °C Maximum value Unit 0.4 °C/W See Figure 36 °C/W Tj Tstg 2.2 Unit V Thermal data Table 4. Thermal data Symbol 8/37 Parameter Rthj-case Thermal resistance junction-case (MAX) (with one channel ON) Rthj-amb Thermal resistance junction-ambient DocID17362 Rev 6 VND5E006ASP-E 2.3 Electrical specifications Electrical characteristics 8 V < VCC < 28 V; -40 °C < Tj < 150 °C, unless otherwise specified. Table 5. Power section Symbol Parameter Test conditions VCC Operating supply voltage VUSD VUSDhyst Min. Typ. Max. Unit 4.5 13 28 V Undervoltage shutdown 3.5 4.5 V Undervoltage shutdown hysteresis 0.5 V 5 mΩ IOUT = 10 A; Tj = 25 °C RON RON REV Vclamp IS IOUT = 10 A; Tj = 150 °C 10 mΩ IOUT = 10 A; VCC = 5 V; Tj = 25 °C 8 mΩ Reverse battery on-state resistance VCC = -13 V; IOUT = -10 A; Tj = 25 °C 6 mΩ Clamp voltage IS = 20 mA 46 52 V Off-state; VCC = 13 V; Tj = 25 °C; VIN = VOUT = VSENSE = VCSD = 0 V 2 (1) 5(1) µA On-state; VCC = 13 V; VIN = 5 V; IOUT = 0 A 3.5 6.5 mA 0.01 3 µA 5 µA On-state resistance Supply current IL(off1) Off-state output current (2) 41 VIN=VOUT=0V; VCC=13V; Tj=25°C 0 VIN=VOUT=0V; VCC=13V; Tj=125°C 0 1. PowerMOS leakage included. 2. For each channel. Table 6. Switching (VCC = 13 V; Tj = 25 °C) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time RL = 1.3 Ω (see Figure 6) — 35 — µs td(off) Turn-off delay time RL = 1.3 Ω (see Figure 6) — 20 — µs Turn-on voltage slope RL = 1.3 Ω — See Figure 27 — V/µs Turn-off voltage slope RL = 1.3 Ω — See Figure 28 — V/µs WON Switching energy losses during twon RL = 1.3 Ω (see Figure 6) — 2.5 — mJ WOFF Switching energy losses during twoff RL = 1.3 Ω (see Figure 6) — 1.2 — mJ (dVOUT/dt)o n (dVOUT/dt)o ff DocID17362 Rev 6 9/37 36 Electrical specifications VND5E006ASP-E Table 7. Logic inputs Symbol Parameter Test conditions VIL Input low level voltage IIL Low level input current VIH Input high level voltage IIH High level input current VI(hyst) Input hysteresis voltage VICL Min. VIN = 0.9 V Typ. Max. Unit 0.9 V 1 µA 2.1 V VIN = 2.1 V 10 0.25 IIN = 1 mA Input clamp voltage VCSDL CS_DIS low level voltage ICSDL Low level CS_DIS current VCSDH CS_DIS high level voltage ICSDH High level CS_DIS current VCSD(hyst CS_DIS hysteresis voltage V 5.5 IIN = -1 mA 7 -0.7 V V 0.9 VCSD = 0.9 V µA V 1 µA 2.1 V VCSD = 2.1 V 10 0.25 µA V ) VCSCL CS_DIS clamp voltage ICSD = 1 mA 5.5 ICSD = -1 mA 7 -0.7 V V Table 8. Protections and diagnostics(1) Symbol Parameter Test conditions IlimH DC short circuit current IlimL Short circuit current during thermal cycling TTSD Shutdown temperature TRS Thermal reset of status VON Max. Unit 70 100 140 A 140 A VCC = 13 V; TR < Tj < TTSD Reset temperature VDEMAG Typ. 5 V < VCC < 24 V TR THYST VCC = 13 V Min. 25 150 175 TRS + 1 TRS + 5 A 200 °C 135 Thermal hysteresis (TTSD-TR) °C 7 Turn-off output voltage clamp IOUT = 2 A; VIN = 0; L = 6 mH Output voltage drop limitation IOUT =1 A; Tj = -40 °C...150 °C (see Figure 8) VCC28 VCC31 °C VCC35 25 1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles. 10/37 DocID17362 Rev 6 °C V mV VND5E006ASP-E Electrical specifications Table 9. Current sense (8 V < VCC < 18 V) Symbol Parameter Test conditions K0 IOUT/ISENSE IOUT = 5 A; VSENSE = 0.5 V Tj = -40 °C...150 °C K1 IOUT/ISENSE IOUT = 10 A; VSENSE = 0.5 V Tj = -40 °C...150 °C Tj = 25 °C...150 °C dK1/K1(1) K2 dK2/K2(1) K3 dK3/K3(1) ISENSE0 VSENSE IOUT = 10 A; VSENSE = 0.5 V; Current sense ratio drift VCSD = 0 V; Tj = -40 °C...150 °C IOUT = 15 A; VSENSE = 4 V Tj = -40 °C...150 °C Tj = 25 °C...150 °C IOUT/ISENSE IOUT = 15 A; VSENSE = 4 V; Current sense ratio drift VCSD = 0 V; Tj = -40 °C...150 °C IOUT = 25 A; VSENSE = 4 V Tj = -40 °C...150 °C Tj = 25 °C...150 °C IOUT/ISENSE IOUT = 25 A; VSENSE = 4 V; Current sense ratio drift VCSD = 0 V; Tj = -40 °C...150 °C Analog sense leakage current Max analog sense output voltage Min. Typ. Max. 8300 12640 17600 9200 9602 13220 17300 13220 16703 -13 13 Unit % 9500 13120 16900 10408 13120 15907 -10 10 % 10600 12920 15600 11278 12920 14644 -7 7 % IOUT = 0 A; VSENSE = 0 V; VCSD = 5 V; VIN = 0 V; Tj = -40 °C...150 °C 0 1 µA VCSD = 0 V; VIN = 5 V; Tj = -40 °C...150 °C 0 2 µA IOUT = 10 A; VSENSE = 0 V; VCSD = VIN = 5 V 0 1 µA IOUT = 25 A; VCSD = 0 V 5 V Analog sense output VSENSEH(2) voltage in fault conditions VCC = 13 V; RSENSE = 10 KΩ 8 V Analog sense output ISENSEH(2) current in fault conditions VCC = 13 V; VSENSE = 5 V 7 mA Delay response time tDSENSE1H from falling edge of CS_DIS pin VSENSE < 4 V, 5 A < Iout < 25 A ISENSE = 90 % of ISENSE max (see Figure 4) 50 100 µs Delay response time tDSENSE1L from rising edge of CS_DIS pin VSENSE < 4 V, 5 A < Iout < 25 A ISENSE = 10 % of ISENSE max (see Figure 4) 5 20 µs DocID17362 Rev 6 11/37 36 Electrical specifications VND5E006ASP-E Table 9. Current sense (8 V < VCC < 18 V) (continued) Symbol Parameter Test conditions Delay response time tDSENSE2H from rising edge of INPUT pin VSENSE < 4 V, 5 A < Iout < 25 A ISENSE = 90 % of ISENSE max (see Figure 4) Delay response time between rising edge of ΔtDSENSE2 output current and H rising edge of current sense VSENSE < 4V, ISENSE = 90 % of ISENSEMAX, IOUT = 90 % of IOUTMAX IOUTMAX =10 (see Figure 7) Delay response time tDSENSE2L from falling edge of INPUT pin VSENSE < 4 V, 5 A < Iout < 25 A ISENSE = 10 % of ISENSE max (see Figure 4) Min. Typ. Max. Unit 110 600 µs 300 µs 250 µs 100 1. Parameter guaranteed by design; it is not tested. 2. Fault conditions includes: power limitation, overtemperature and open-load off-state detection. Table 10. Open-load detection (8 V < VCC < 18 V) Symbol Parameter Test conditions Typ. Max. Unit VOL Open-load off-state voltage detection threshold VIN = 0 V, 8 V < VCC < 18 V 2 — 4 V IOL Open-load on-state current detection threshold VIN = 5 V, 8 V < VCC < 18 V ISENSE = 5 µA 10 — 100 mA 180 — 1200 µs -120 — 0 µA — 20 µs Output short circuit to tDSTKON VCC detection delay at See Figure 5 turn off 12/37 Min. IL(off2) Off-state output current VIN = 0 V; VSENSE = 0 V at VOUT = 4 V VOUT rising from 0 V to 4 V td_vol Delay response from output rising edge to VSENSE rising edge in open-load VIN = 0 V; VOUT = 4 V VSENSE = 90 % of VSENSEH DocID17362 Rev 6 VND5E006ASP-E Electrical specifications Figure 4. Current sense delay characteristics ,1387 &6B',6 /2$'&855(17 6(16(&855(17 W'6(16(+ W'6(16(/ W'6(16(+ W'6(16(/ $*9 Figure 5. Open-load off-state delay timing 287387678&.$79&& 9,1 9287!92/ 96(16(+ 9&6 W'67.21 $*9 Figure 6. Switching characteristics 9287 W:RQ W:RII   G9287GW RQ G9287GW RII WU  WI W ,1387 WG RQ WG RII W $*9 DocID17362 Rev 6 13/37 36 Electrical specifications VND5E006ASP-E Figure 7. Delay response time between rising edge of output current and rising edge of current sense (CS enabled) 9,1 ǻW'6(16(+ W ,287 ,2870$; ,2870$; W ,6(16( ,6(16(0$; ,6(16(0$; W $*9 Figure 8. Output voltage drop limitation 9&&9287 7M ƒ& 7M ƒ& 7M ƒ& 921 ,287 921521 7 $*9 14/37 DocID17362 Rev 6 VND5E006ASP-E Electrical specifications Figure 9. IOUT/ISENSE vs IOUT ,RXW,VHQVH  $  %     &    '  (        ,RXW>$@ $0D[7M ƒ&WRƒ& ' 0LQ7M ƒ&WRƒ& % 0D[7M ƒ&WRƒ& ( 0LQ7M ƒ&WRƒ& & 7\SLFDO7M ƒ&WRƒ& $*9 Figure 10. Maximum current sense ratio drift vs load current(1) G..>@    $    %            ,RXW>$@ $0D[7M ƒ&WRƒ& %0LQ7M ƒ&WRƒ& $*9 1. Parameter guaranteed by design; it is not tested. DocID17362 Rev 6 15/37 36 Electrical specifications VND5E006ASP-E Table 11. Truth table Input Output Sense (VCSD = 0 V)(1) Normal operation L H L H 0 Nominal Overtemperature L H L L 0 VSENSEH Undervoltage L H L L 0 0 H X (no power limitation) Cycling (power limitation) Nominal Conditions Overload H VSENSEH Short circuit to GND (Power limitation) L H L L 0 VSENSEH Open-load off-state (with external pull up) L H VSENSEH Short circuit to VCC (external pull up disconnected) L H H H VSENSEH < Nominal Negative output voltage clamp L L 0 1. If the VCSD is high, the SENSE output is at a high impedance, its potential depends on leakage currents and external circuit. 16/37 DocID17362 Rev 6 VND5E006ASP-E Electrical specifications Table 12. Electrical transient requirements (part 1/3) ISO 7637-2: 2004(E) Test levels(1) Number of pulses or test times Burst cycle/pulse repetition time Delays and impedance Test Pulse III IV 1 -75 V -100 V 5000 pulses 0.5 s 5s 2 ms, 10 Ω 2a +37 V +50 V 5000 pulses 0.2 s 5s 50 μs, 2 Ω 3a -100 V -150 V 1h 90 ms 100 ms 0.1 μs, 50 Ω 3b +75 V +100 V 1h 90 ms 100 ms 0.1 μs, 50 Ω 4 -6 V -7 V 1 pulse 100 ms, 0.01 Ω 5b(2) +65 V +87 V 1 pulse 400 ms, 2 Ω 1. The above test levels must be considered referred to VCC = 13.5 V except for pulse 5b. 2. Valid in case of external load dump clamp: 40V maximum referred to ground. The protection strategy allows PowerMOS to be cyclically switched on during load dump, so distributing the load dump energy along the time and to transfer a part of it to the load. Table 13. Electrical transient requirements (part 2/3) Test level results(1) ISO 7637-2: 2004(E) Test Pulse III IV 1 C C 2a C C 3a C C 3b C C 4 C C 5b(2)(3) C C 1. The above test levels must be considered referred to VCC = 13.5 V except for pulse 5b. 2. Valid in case of external load dump clamp: 40V maximum referred to ground. The protection strategy allows PowerMOS to be cyclically switched on during load dump, so distributing the load dump energy along the time and to transfer a part of it to the load. 3. Suppressed load dump (pulse 5b) is withstood with a minimum load connected as specified in Table 3: Absolute maximum ratings. Table 14. Electrical transient requirements (part 3/3) Class Contents C All functions of the device are performed as designed after exposure to disturbance. E One or more functions of the device are not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the DocID17362 Rev 6 17/37 36 Electrical specifications 2.4 VND5E006ASP-E Waveforms Figure 11. Normal operation 1RUPDORSHUDWLRQ ,1387 1RPLQDOORDG 1RPLQDOORDG ,287 96(16( 9&6B',6 $*9 Figure 12. Overload or short to GND 2YHUORDGRU6KRUWWR*1' ,1387 3RZHU/LPLWDWLRQ , /LP+! 7KHUPDOF\FOLQJ , /LP/! ,287 96(16( 9&6B',6 $*9 18/37 DocID17362 Rev 6 VND5E006ASP-E Electrical specifications Figure 13. Intermittent overload ,QWHUPLWWHQW2YHUORDG ,1387 2YHUORDG ,/LP+ ! ,/LP/ ! 1RPLQDOORDG ,287 96(16(+ ! 96(16( 9&6B',6 $*9 Figure 14. Off-state open-load with external circuitry 2)) 6WDWH2SHQ/RDG ZLWKH[WHUQDOFLUFXWU\ ,1387 9287!92/ 9287 92/ ,287 96(16(+ ! W'67. RQ 96(16( 9&6B',6 $*9 DocID17362 Rev 6 19/37 36 Electrical specifications VND5E006ASP-E Figure 15. Short to VCC 6KRUWWR9&& 9287 5HVLVWLYH 6KRUWWR9&& +DUG 6KRUWWR9&& 92/ 9287!92/ ,287 W'67. RQ W'67. RQ 9&6B',6 $*9 Figure 16. TJ evolution in overload or short to GND 7- HYROXWLRQLQ 2YHUORDGRU6KRUWWR*1' ,1387 6HOIOLPLWDWLRQRIIDVWWKHUPDOWUDQVLHQWV 776' 7+Q$@ ,LK>X$@     9LQ 9                               7F>ƒ&@      7F>ƒ&@ $*9 $*9 Figure 19. Input clamp voltage Figure 20. Input high level voltage 9LFO>9@ Vih [V]  4  3.5 ,LQ P$  3   2.5  2  1.5  1  0.5  0 -50          7F>ƒ&@  -25 0 25  50 75 100 125 150 175 Tc [°C] AG00086V1 $*9 Figure 21. Input low level voltage Figure 22. Input hysteresis voltage 9LK\VW>9@ 9LO>9@                             7F>ƒ&@      $*9 DocID17362 Rev 6      7F>ƒ&@     $*9 21/37 36 Electrical specifications VND5E006ASP-E Figure 23. On-state resistance vs Tcase Figure 24. On-state resistance vs VCC 5RQ>P2KP@ 5RQ>P2KP@      7F ƒ&  7F ƒ& ,RXW $ 9FF 9    7F ƒ&   7F ƒ&                          9FF>9@ 7F>ƒ&@ $*9 $*9 Figure 25. Undervoltage shutdown Figure 26. ILIMH vs Tcase 9XVG>9@ ,OLPK>$@     9FF 9                                  $*9 Figure 28. Turn-off voltage slope G9RXWGW 2Q>9PV@ G9RXWGW 2II>9PV@       9FF 9 5O ȍ  9FF 9 5O ȍ                          7F>ƒ&@      7F>ƒ&@ $*9 22/37  $*9 Figure 27. Turn-on voltage slope   7F>ƒ&@ 7F>ƒ&@ DocID17362 Rev 6     $*9 VND5E006ASP-E Electrical specifications Figure 29. CS_DIS clamp voltage Figure 30. Low level CS_DIS voltage 9FVGFO>9@ 9FVGO>9@     ,LQ P$                            7F>ƒ&@          7F>ƒ&@ $*9 $*9 Figure 31. High level CS_DIS voltage 9FVGK>9@                    7F>ƒ&@ $*9 DocID17362 Rev 6 23/37 36 Application information 3 VND5E006ASP-E Application information Figure 32. Application schematic 9 9&& 9 5SURW &6B',6 'OG 0&8 5SURW 5SURW ,1387 287387 &855(176(16( 9 *1' 56(16( &H[W $*9 Note: Channel 2 has the same internal circuit as channel 1. 3.1 Load dump protection Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the VCC max DC rating. The same applies if the device is subject to transients on the VCC line that are greater than the ones shown in the ISO 7637-2 2004 (E) table. 3.2 MCU I/Os protection When negative transients are present on the VCC line, the control pins are pulled negative to approximately -1.5 V. ST suggests to insert a resistor (Rprot) in line to prevent the microcontroller I/O pins from latching-up. The value of these resistors is a compromise between the leakage current of microcontroller and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of microcontroller I/Os. Equation 1 -VCCpeak/Ilatchup ≤ Rprot ≤ (VOHμC - VIH) / IIHmax Calculation example: For VCCpeak = -1.5 V and Ilatchup ≥ 20 mA; VOHμC ≥ 4.5 V 75 Ω ≤ Rprot ≤ 240 kΩ. Recommended values: Rprot = 10 kΩ, CEXT = 10 nF. 24/37 DocID17362 Rev 6 VND5E006ASP-E 3.3 Application information Current sense and diagnostic The current sense pin performs a double function (see Figure 33: Current sense and diagnostic): • Current mirror of the load current in normal operation, delivering a current proportional to the load one according to a known ratio KX. The current ISENSE can be easily converted to a voltage VSENSE by means of an external resistor RSENSE. Linearity between IOUT and VSENSE is ensured up to 5V minimum (see parameter VSENSE in Table 9: Current sense (8 V < VCC < 18 V)). The current sense accuracy depends on the output current (refer to current sense electrical characteristics Table 9: Current sense (8 V < VCC < 18 V)). • Diagnostic flag in fault conditions, delivering a fixed voltage VSENSEH up to a maximum current ISENSEH in case of the following fault conditions (refer to Truth table): – Power limitation activation – Overtemperature – Short to VCC in off-state – Open-load in off-state with additional external components. A logic level high on CS_DIS pin sets at the same time all the current sense pins of the device in a high impedance state, thus disabling the current monitoring and diagnostic detection. This feature allows multiplexing of the microcontroller analog inputs by sharing of sense resistance and ADC line among different devices. Figure 33. Current sense and diagnostic 938 9%$7 9&& 0DLQ026Q 9 38B&0' 2YHUWHPSHUDWXUH ,287.; 538  2/2))  ,6(16(+ 92/ 3ZUB/LP ,/RII 287Q ,1387Q 96(16(+ &6B',6 &855(17 6(16(Q *1' /RDG 53527 7RX&$'& 56(16( 96(16( $*9 DocID17362 Rev 6 25/37 36 Application information 3.3.1 VND5E006ASP-E Short to VCC and off-state open-load detection Short to VCC A short circuit between VCC and output is indicated by the relevant current sense pin set to VSENSEH during the device off-state. Small or no current is delivered by the current sense during the on-state depending on the nature of the short circuit. Off-state open-load with external circuitry Detection of an open-load in off mode requires an external pull-up resistor RPU connecting the output to a positive supply voltage VPU. It is preferable VPU to be switched off during the module standby mode in order to avoid the overall standby current consumption to increase in normal conditions, i.e. when load is connected. For proper open-load detection in off-state, the external pull-up resistor must be selected according to the following formula: VOUT Pull − up _ ON = RPD ⋅ VPU − RPU ⋅ RPD ⋅ I L (off 2) RPU + RPD > VOL max = 4V For the values of VOLmin,VOLmax, and IL(off2) see Table 10: Open-load detection (8 V < VCC < 18 V). 26/37 DocID17362 Rev 6 VND5E006ASP-E 3.4 Application information Maximum demagnetization energy (VCC = 13.5 V) Figure 34. Maximum turn-off current versus inductance  , $  91'($63 6LQJOH3XOVH 5HSHWLWLYHSXOVH7MVWDUW ƒ& 5HSHWLWLYHSXOVH7MVWDUW ƒ&   / P+   $*9 A: Tjstart = 150°C single pulse B: Tjstart = 100°C repetitive pulse C: Tjstart = 125°C repetitive pulse 9,1 , / 'HPDJQHWL]DWLRQ 'HPDJQHWL]DWLRQ 'HPDJQHWL]DWLRQ $*9 Note: W Values are generated with RL = 0 Ω. In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves A and B. DocID17362 Rev 6 27/37 36 Package and PCB thermal data VND5E006ASP-E 4 Package and PCB thermal data 4.1 PowerSO-16 thermal data Figure 35. PowerSO-16 PC board(1) $*9 1. Layout condition of Rth and Zth measurements (PCB: Double layer, Thermal Vias, FR4 area= 77mm x 86mm, PCB thickness=1.6mm, Cu thickness=70μm (front and back side), Copper areas: from minimum pad lay-out to 8cm2). Figure 36. Rthj-amb vs PCB copper area in open box free air condition (one channel ON) 57+MBDPEYV&XKHDWVLQNDUHD   57+MDPE 57+MBDPE ƒ&:              3&%&XKHDWVLQNDUHD FPA   $*9 28/37 DocID17362 Rev 6 VND5E006ASP-E Package and PCB thermal data Figure 37. PowerSO-16 thermal impedance junction ambient single pulse (one channel ON) ZTH (°C/W) 100 Cu=8 cm2 Cu=2 cm2 Cu=foot print 10 1 0.1 0.0001 0.001 0.01 0.1 Ti ( ) Time (s) 1 10 100 1000 AG00104V1 Figure 38. Thermal fitting model of a double channel HSD in PowerSO-16(1) $*9 1. The fitting model is a semplified thermal tool and is valid for transient evolutions where the embedded protections (power limitation or thermal cycling during thermal shutdown) are not triggered. DocID17362 Rev 6 29/37 36 Package and PCB thermal data VND5E006ASP-E Equation 2: pulse calculation formula Z THδ where = R TH ⋅δ+Z THtp (1 – δ) δ = tp ⁄ T Table 15. Thermal parameters 2 30/37 Area/island (cm ) Footprint 2 8 R1=R7 (°C/W) 0.05 R2=R8 (°C/W) 0.4 R3 (°C/W) 1 R4 (°C/W) 7 R5 (°C/W) 12 10 8 R6 (°C/W) 22 18 12 C1=C7 (W.s/°C) 0.01 C2=C8 (W.s/°C) 0.1 C3 (W.s/°C) 1 C4 (W.s/°C) 2 C5 (W.s/°C) 3 4 7 C6 (W.s/°C) 5 6 12 DocID17362 Rev 6 VND5E006ASP-E Package information 5 Package information 5.1 ECOPACK® packages In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 5.2 PowerSO-16 mechanical data Figure 39. PowerSO-16 package dimensions $*9 DocID17362 Rev 6 31/37 36 Package information VND5E006ASP-E Table 16. PowerSO-16 mechanical data mm Dim. Min. Typ. Max. A1 0 0.05 0.1 A2 3.4 3.5 3.6 A3 1.2 1.3 1.4 A4 0.15 0.2 0.25 a 0.2 b 0.27 0.35 0.43 c 0.23 0.27 0.32 D 9.4 9.5 9.6 D1 7.4 7.5 7.6 d 0 0.05 0.1 E (1) 13.85 14.1 14.35 E1 9.3 9.4 9.5 E2 7.3 7.4 7.5 E3 5.9 6.1 6.3 0.8 e e1 5.6 F 0.5 G 1.2 L 0.8 1 R1 0.25 R2 T 32/37 1.1 0.8 2° 5° T1 6° (typ.) T2 10° (typ.) DocID17362 Rev 6 8° VND5E006ASP-E 5.3 Package information Packing information Figure 40. PowerSO-16 tube shipment (no suffix) $ Base Q.ty Bulk Q.ty A B C (± 0.1) Tube length (± 0.5) & 50 1000 4.9 17.2 0.8 532 All dimensions are in mm. % $*9 Figure 41. PowerSO-16 tape and reel shipment (suffix “TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 600 600 330 1.5 13 20.2 24.4 60 30.4 All dimensions are in mm. TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 (± 0.1) P D (+ 0.1/-0) D1 (min) F (± 0.05) K (max) P1 (± 0.1) All dimensions are in mm. 24 4 24 1.5 1.5 11.5 6.5 2 End Start Top cover tape No components Components No components 500mm min Empty components pockets saled with cover tape. 500mm min User direction of feed AG00108V1 DocID17362 Rev 6 33/37 36 Package information VND5E006ASP-E Figure 42. PowerSO-16 suggested pad layout       $*9 34/37 DocID17362 Rev 6 VND5E006ASP-E 6 Order codes Order codes Table 17. Device summary Order codes Package PowerSO-16 Tube Tape and reel VND5E006ASP-E VND5E006ASPTR-E DocID17362 Rev 6 35/37 36 Revision history 7 VND5E006ASP-E Revision history Table 18. Document revision history 36/37 Date Revision Changes 18-Apr-2010 1 Initial release. 02-Jul-2010 2 Updated Features list. 21-Jul-2010 3 Updated Table 9: Current sense (8 V < VCC < 18 V). 19-Jan-2011 4 Added Section 3.4: Maximum demagnetization energy (VCC = 13.5 V) Table 3: Absolute maximum ratings: – EMAX: updated value and test condition Table 4: Thermal data – Added Rthj-case row 19-Sep-2013 5 Updated Disclaimer. 28-Oct-2013 6 Updated footnote 2 into the Table 12: Electrical transient requirements (part 1/3) and Table 13: Electrical transient requirements (part 2/3). DocID17362 Rev 6 VND5E006ASP-E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com DocID17362 Rev 6 37/37 37
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